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WO2009077943A1 - Procédé pour la production de plasma laser et source de rayonnement, notamment pour le rayonnement uv extrême - Google Patents

Procédé pour la production de plasma laser et source de rayonnement, notamment pour le rayonnement uv extrême Download PDF

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Publication number
WO2009077943A1
WO2009077943A1 PCT/IB2008/055221 IB2008055221W WO2009077943A1 WO 2009077943 A1 WO2009077943 A1 WO 2009077943A1 IB 2008055221 W IB2008055221 W IB 2008055221W WO 2009077943 A1 WO2009077943 A1 WO 2009077943A1
Authority
WO
WIPO (PCT)
Prior art keywords
target material
laser
radiation source
evaporated
carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2008/055221
Other languages
English (en)
Inventor
Jakob Willi Neff
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Intellectual Property and Standards GmbH
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Koninklijke Philips NV
Original Assignee
Philips Intellectual Property and Standards GmbH
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Intellectual Property and Standards GmbH, Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV, Koninklijke Philips Electronics NV filed Critical Philips Intellectual Property and Standards GmbH
Publication of WO2009077943A1 publication Critical patent/WO2009077943A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/002—Supply of the plasma generating material
    • H05G2/0027—Arrangements for controlling the supply; Arrangements for measurements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • H05G2/0035—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state the material containing metals as principal radiation-generating components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • H05G2/0082—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam
    • H05G2/0088—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam for preconditioning the plasma generating material

Definitions

  • the present invention relates to a method for plasma production, in particular for radiation sources emitting extreme ultra-violet (EUV) radiation and/or soft X-ray radiation, in which a target material in a target region is evaporated with one or more laser pulses and heated to produce a laser-based plasma.
  • EUV extreme ultra-violet
  • the invention also relates to a radiation source, which uses a method of this type for plasma production. Background of the invention
  • Plasma sources are frequently used as light sources for short-wave radiation in the technical application. Basically, two different methods are used here to produce and heat plasmas in order to obtain virtually punctiform, short-wave light sources.
  • the plasma is heated by a short current pulse and, in the other method, by a short laser pulse.
  • the target material which supplies the material for the plasma may be present or supplied in the two cases in a gaseous, liquid or solid state.
  • An electrode system of an anode, cathode and hollow cathode is described in EP 1036488 Bl, in which the target material, for example xenon, is present in a gaseous state at a pressure of about 100 Pa.
  • the anode and cathode are low- inductively connected to a capacitive energy store.
  • the xenon gas is pre-ionized and electrically conductive at a certain electric voltage. It spreads into the discharge gap between the anode and cathode and causes a current pulse from the energy store, which heats it and excites it thereby to produce radiation. In order to produce high radiation outputs, the current pulses have to be repeated at a high frequency. This leads to heating and also by a sputtering action to the destruction of the electrodes in the long term. The output and service life of the electrode system are therefore severely limited in this type of light production.
  • EP 1665907 Bl shows a special structure of the electrodes, the current supply and the cooling and a special technique for providing the radiating medium.
  • the electrode system consists of two rotatably mounted disc-shaped electrodes, which each partially dip into a temperature-controlled bath with liquefied metal, for example molten tin.
  • a liquid metal film forms on the electrodes during rotation out of the melt owing to the wetting of the surface of the electrode wheels with the liquefied metal.
  • a part of the metal film located on the electrodes evaporates and bridges the electrode spacing. An electric breakdown occurs at this point and also a very high current flow from the capacitor bank used as an energy store.
  • individual droplets from a droplet jet of liquid target material are evaporated, ionized and heated exclusively with laser pulses.
  • the evaporation of the droplet and the heating thereof may be separated, in that firstly one or more laser pulses are radiated in as pre-pulses with low energy and, at a short time interval, a last pulse with high energy follows.
  • the pre-pulses condition the target, i.e. they adjust the optimal particle and electron density, so the last, energy-rich laser pulse is completely absorbed as far as possible and a plasma temperature suitable for the radiation production is reached.
  • Gaseous substances may be forced, for example, under high pressure through nozzles into a vacuum chamber, in which the electrode system is arranged.
  • the laser pulse however, then has to be focused in a region very close to the nozzle, in which the gas is still adequately dense or ice clusters have formed owing to the cooling during the pressure relief.
  • the service life of the nozzles is low because of the erosion by the plasma and the output of sources of this type is low because of the lack of cooling possibilities.
  • An improvement is achieved in that the gas is cooled and is introduced as a liquid jet through the nozzle into the vacuum chamber.
  • the jet of target material is chopped with a laser pulse with low energy in terms of time and also spatially before the main laser pulse with as little disruption as possible, so the following disruption can only go back to this point and the remaining jet remains uninfluenced up to the nozzle.
  • it is achieved by the action of ultrasound on the nozzle that the jet is already periodically disrupted when leaving the nozzle in such a way that it disintegrates into a pulse train of individual drops.
  • a complex optical monitor system is then required in order to be able to synchronize the laser pulses with regard to place and time with the individual droplets.
  • the target has to be moved relative to the site of the laser focus, as the surface is destroyed by the plasma formation.
  • the target may have the form of a cylinder, which is rotatably and displaceably mounted.
  • the solid target may be configured as a band, which is pulled through the laser focus. In each case, the target is a wear part here, which gives rise to frequent maintenance intervals of the radiation source.
  • the object of the present invention is to provide a method for plasma production for a radiation source and a radiation source working with the method, which do not have the disadvantages of the described techniques and can be used in particular to produce EUV radiation and/or soft X-ray radiation Summary of the invention
  • the associated radiation source correspondingly comprises a device for providing target material in a target region and at least one laser, which emits laser pulses for the evaporation of the target material in the target region and to heat the evaporated target material to produce a laser-based plasma.
  • the device for providing target material in this case has a carrier and means for applying the target material as a liquid film onto the carrier and is configured to move the carrier with the liquid film through the target region.
  • An erosion of the supplying components, in the present case the carrier, can be avoided by the proposed supply of the target material as a liquid film on a carrier to the target region, i.e. to the region at which the target material is evaporated, so that no wear caused thereby with short maintenance intervals connected therewith, occurs.
  • the optical accessibility of the radiation-emitting area is not restricted by electrodes.
  • the method can also be operated at the high pressure of a buffer gas in comparison to gas discharge sources and this has an advantageous effect on the service life of a downstream optical system.
  • Undesired deposits of evaporated target material on optical surfaces can be better suppressed by a high pressure of a buffer gas (debris suppression).
  • the proposed method can be operated significantly more stably.
  • the fluctuation of the radiation emission from pulse to pulse is also very low in the proposed method. Thus, this fluctuation depends to a high degree on the reproducibility of the production of the target.
  • the thermal loading of the carrier is further reduced.
  • electric and/or magnetic fields are used to counteract a lateral spreading of the evaporated material and to thereby keep the material together better spatially.
  • a strong magnetic field oriented, for example, in the target region perpendicularly to the surface of the liquid film influences the spreading of the ionized material vapor in such a way that the latter preferably moves away parallel to the field lines from the surface.
  • the vapor cloud is kept together laterally thereby, so a second high-power laser pulse can be focused at a greater spacing from the surface into the vapor cloud.
  • the liquid target material is preferably evaporated with at least a first laser pulse and the evaporated target material is heated with one or more second laser pulses.
  • the at least one first laser pulse may in this case have lower energy than the one or more second laser pulses.
  • the one or more second laser pulses are preferably not directed onto the surface of the carrier or the liquid film, but focused at a spacing from the surface of the carrier into the evaporated target material, so that they do not impinge on the carrier.
  • the spacing can still be advantageously increased by the above-described use of electric and/or magnetic fields to reduce the thermal loading.
  • second laser pulses are focused from a plurality of directions, in particular symmetrically to one another, into the evaporated target material.
  • a rotatably mounted disc-shaped element is used as the carrier.
  • the target material is applied to the radial periphery of this disc-shaped element and supplied by the rotation of this element to the target region as a liquid film.
  • the disc-shaped element may be a so lid- surface disc or a disc penetrated by one or more openings, which has a radial outer face configured suitably to receive the liquid film.
  • the application of the liquid layer onto the outer face of the disc-shaped element advantageously takes place in that this element dips with a radial part portion of its outer face into a container with the liquid target material. By wetting the outer face during the rotation of the element through the liquid target material, a liquid layer of the target material then forms on this face.
  • suitable skimming elements may be provided to maintain a certain thickness of the liquid layer or the liquid film on the outer face.
  • a flexible band preferably a continuous band is used that is guided by means of corresponding deflection elements.
  • the target material is applied to the surface of this band and supplied by the revolution of the band to the target region.
  • the liquid film can also be advantageously applied here by dipping a portion of this band into a container with the liquid target material, the surface of the band being wetted by the target material.
  • the target material can obviously also be applied in a different manner to the band or the disc-shaped element, for example by spraying on.
  • the method and the radiation source can be used particularly advantageously to produce EUV radiation or soft X-ray radiation in the range of about 1 nm to 20 nm wavelength. Radiation sources of this type are required above all for EUV lithography or measuring.
  • metallic target materials are advantageously used, which are heated to a temperature above melting point to produce the liquid film.
  • a suitable operating temperature is, for example, 300 0 C.
  • Gas lasers for example CO 2 lasers
  • solid state lasers for example Nd: YAG lasers
  • Fig. 1 - schematically shows an example of a configuration of the proposed radiation source; and Fig. 2 - shows an example of the production of a magnetic field for the spatial influencing of the evaporated material.
  • the radiation source shown schematically in Fig. 1 is used to produce EUV radiation.
  • Liquid tin is used here as the target material and is evaporated by laser pulses and heated to produce the radiation-emitting plasma 1.
  • the radiation source in the present embodiment has two lasers. A laser pulse which evaporates target material is produced with the first laser 2. With the second laser 3, laser pulses with higher energy are radiated in and heat the evaporated target material to produce the plasma 1 emitting EUV radiation.
  • the device for supplying the target material has a metal block 4, which contains a tin reservoir 5 with liquified tin.
  • the liquefied tin is held in the reservoir 5 over a cooling device 7 at a temperature slightly above the melting point of about 230 0 C.
  • a disc 8 rotatably mounted about a pivot pin 10 is partially let into the metal block 4 and may consist of molybdenum, for example.
  • the metal block 4 forms a counter-form to the disc 8, so that between the metal block 4 and the disc 8 there exists a narrow gap 13, to which liquid tin from the reservoir can be supplied by means of a supply channel 14 in the metal block 4.
  • the liquid tin may in this case be conveyed by the pump 6 through this gap 13, which is formed between the disc 8 and the metal block 4.
  • the periphery of the disc is continuously wetted with tin and efficiently kept at the temperature of the liquid tin.
  • At least one laser beam which evaporates material locally from the tin film 9 and heats it until EUV radiation is emitted, is focused at the uppermost point onto the radial outer face of the disc 8. In the present example, this is achieved with the two laser beams of the first 2 and second laser 3. Obviously, evaporation and heating may, however, also be implemented by an individual laser.
  • some tin is advantageously firstly evaporated from the surface with a first laser pulse from the first laser 2, and spreads away from the radial outer face of the disc 8.
  • the tin- vapor cloud produced is then heated with a second laser pulse from the second laser 3.
  • the first laser pulse may in this case have significantly lower energy than the second laser pulse.
  • This second laser pulse is advantageously radiated in at a spacing from the radial outer face of the disc 8 in such a way that it does not impinge on the disc 8. This may, for example, take place by radiation parallel to the pivot pin 10 of the disc 8 slightly above the radial outer face.
  • a plurality of high-power laser beams may also be simultaneously focused from slightly tilted angles into the vapor cloud. As a result, a more uniform (more symmetrical) heating effect and therefore also a radiation of the EUV radiation with a higher degree of isotropy is achieved.
  • the peripheral speed of the disc 8 should be selected such that a fresh point of the tin film 9 is always impinged upon with the respective following pulse. It may also be advantageous if the tin film is not produced on a metallic disc, but on a closed, peripheral metal band and transported into the region of the laser foci. With a higher rotational speed of the disc there is the risk that the tin film will be hurled away by the centrifugal force in the form of droplets. This effect can be completely avoided in this region with a band running straight in the target region.
  • a further advantage of a band is the complete freedom of orientation of the band surface in relation to the direction of the gravitational force. It is therefore easily possible to deflect the band and orientate the laser radiation in such a way that the EUV radiation can radiate downward.
  • Fig. 2 shows a further configuration possibility of the proposed radiation source, in which the spreading of the evaporated material for the following heating is suitably restricted by a magnetic field.
  • the figure shows the view perpendicular to the pivot pin 10 of the disc 8.
  • the first laser 2 which evaporates the target material in the target region, radiates perpendicularly onto the radial outer face of the disc 8.
  • the second laser 3 which heats the vapor cloud produced, is radiated tangentially via the radial outer face of the disc 8 into the vapor cloud. This means that the surface of the disc 8 is not damaged by the high-energy laser pulses of the second laser 3.
  • two magnet coils 11 are arranged on the disc 8 and produce a directed magnetic field in the target region.
  • the magnetic field lines 12 in the target region are indicated in the figure. This magnetic field prevents the flowing away of the charged particles of the evaporated material and the plasma produced therefrom perpendicular to the field lines.
  • the evaporated material is laterally substantially held together compared to a configuration without a magnetic field of this type.
  • the laser pulses of the high-power laser responsible for the heating, i.e. the second laser 3 can therefore be radiated in at a greater spacing from the radial outer face of the disc 8, so the thermal loading of the disc is reduced.
  • the site, at which the radiation is produced, should be adjustable in a range of at least 1 mm 2 precisely down to a few ⁇ m, and also in a manner which is stable in the long term, with respect to the optical elements. Both in the case of a rotatable disc and also with a band of a few mm in width, this can be achieved without problems by displacing the foci of the lasers over the surface. While in a droplet jet target the time of the radiation emission is determined by the individual droplets, this restriction does not exist with the present radiation source.
  • the tin- vapor cloud can be generated at any desired time with a precision of better than 100 ns with the first laser pulse.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • X-Ray Techniques (AREA)

Abstract

La présente invention concerne un procédé pour la production de plasma laser et une source de rayonnement, dans laquelle ce procédé de production de plasma est utilisé. Dans le procédé, un matériau cible dans une zone cible est évaporé avec une ou des impulsions laser et chauffé pour produire du plasma laser. Le matériau cible est déplacé dans le procédé sous la forme d'un film liquide (9) sur un support (8) à travers la zone cible. L'usure accrue des composants pour l'alimentation du matériau cible peut être évitée et un fonctionnement stable de la production de rayonnement réalisé par le procédé et la source de rayonnement associée.
PCT/IB2008/055221 2007-12-14 2008-12-11 Procédé pour la production de plasma laser et source de rayonnement, notamment pour le rayonnement uv extrême Ceased WO2009077943A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007060348.9 2007-12-14
DE102007060348 2007-12-14

Publications (1)

Publication Number Publication Date
WO2009077943A1 true WO2009077943A1 (fr) 2009-06-25

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103281855A (zh) * 2013-05-16 2013-09-04 中国科学院光电研究院 一种用于激光光源的液态金属靶产生装置
NL2012588A (en) * 2013-04-11 2014-10-14 Ushio Electric Inc Arrangement for the handling of a liquid metal for cooling revolving components of a radiation source based on a radiation-emitting plasma.
WO2014178177A1 (fr) * 2013-04-30 2014-11-06 ウシオ電機株式会社 Dispositif de source de lumière à rayonnement ultraviolet (uv) extrême
WO2015025218A1 (fr) * 2013-08-21 2015-02-26 Ushio Denki Kabushiki Kaisha Procédé et dispositif de refroidissement de sources de rayonnement basées sur un plasma
US9411238B2 (en) 2012-01-18 2016-08-09 Asml Netherlands B.V. Source-collector device, lithographic apparatus, and device manufacturing method

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19743311A1 (de) * 1996-09-30 1998-04-02 Fraunhofer Ges Forschung Target für die Erzeugung gepulster Röntgen- und Extrem-UV-Strahlung (EUV), Verfahren zur Erzeugung eines solchen Targets sowie seine Verwendung
WO2006123270A2 (fr) * 2005-05-19 2006-11-23 Philips Intellectual Property & Standards Gmbh Source a decharge gazeuse, destinee en particulier a generer un rayonnement ultraviolet extreme
DE102005045568A1 (de) * 2005-05-31 2006-12-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zum Schutz einer optischen Komponente, insbesondere in einer EUV-Quelle
WO2007005415A2 (fr) * 2005-06-29 2007-01-11 Cymer, Inc. Systeme laser pilote de source lumineuse ultraviolette extreme a plasma produit par laser (lpp)
JP2007200919A (ja) * 2006-01-23 2007-08-09 Ushio Inc 極端紫外光光源装置
US20070228301A1 (en) * 2006-03-28 2007-10-04 Masaki Nakano Target supplier
DE102006027856B3 (de) * 2006-06-13 2007-11-22 Xtreme Technologies Gmbh Anordnung zur Erzeugung von extrem ultravioletter Strahlung mittels elektrischer Entladung an regenerierbaren Elektroden

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19743311A1 (de) * 1996-09-30 1998-04-02 Fraunhofer Ges Forschung Target für die Erzeugung gepulster Röntgen- und Extrem-UV-Strahlung (EUV), Verfahren zur Erzeugung eines solchen Targets sowie seine Verwendung
WO2006123270A2 (fr) * 2005-05-19 2006-11-23 Philips Intellectual Property & Standards Gmbh Source a decharge gazeuse, destinee en particulier a generer un rayonnement ultraviolet extreme
DE102005045568A1 (de) * 2005-05-31 2006-12-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zum Schutz einer optischen Komponente, insbesondere in einer EUV-Quelle
WO2007005415A2 (fr) * 2005-06-29 2007-01-11 Cymer, Inc. Systeme laser pilote de source lumineuse ultraviolette extreme a plasma produit par laser (lpp)
JP2007200919A (ja) * 2006-01-23 2007-08-09 Ushio Inc 極端紫外光光源装置
US20070228301A1 (en) * 2006-03-28 2007-10-04 Masaki Nakano Target supplier
DE102006027856B3 (de) * 2006-06-13 2007-11-22 Xtreme Technologies Gmbh Anordnung zur Erzeugung von extrem ultravioletter Strahlung mittels elektrischer Entladung an regenerierbaren Elektroden

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9411238B2 (en) 2012-01-18 2016-08-09 Asml Netherlands B.V. Source-collector device, lithographic apparatus, and device manufacturing method
NL2012588A (en) * 2013-04-11 2014-10-14 Ushio Electric Inc Arrangement for the handling of a liquid metal for cooling revolving components of a radiation source based on a radiation-emitting plasma.
WO2014178177A1 (fr) * 2013-04-30 2014-11-06 ウシオ電機株式会社 Dispositif de source de lumière à rayonnement ultraviolet (uv) extrême
JP2014216286A (ja) * 2013-04-30 2014-11-17 ウシオ電機株式会社 極端紫外光光源装置
US9480136B2 (en) 2013-04-30 2016-10-25 Ushio Denki Kabushiki Kaisha Extreme UV radiation light source device
US9686846B2 (en) 2013-04-30 2017-06-20 Ushio Denki Kabushiki Kaisha Extreme UV radiation light source device
CN103281855A (zh) * 2013-05-16 2013-09-04 中国科学院光电研究院 一种用于激光光源的液态金属靶产生装置
WO2015025218A1 (fr) * 2013-08-21 2015-02-26 Ushio Denki Kabushiki Kaisha Procédé et dispositif de refroidissement de sources de rayonnement basées sur un plasma

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