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WO2009075393A1 - Pistolet de pulvérisation n'endommageant pas le plasma, pulvérisation, appareil de traitement plasma et procédé de formation de film - Google Patents

Pistolet de pulvérisation n'endommageant pas le plasma, pulvérisation, appareil de traitement plasma et procédé de formation de film Download PDF

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Publication number
WO2009075393A1
WO2009075393A1 PCT/KR2007/006409 KR2007006409W WO2009075393A1 WO 2009075393 A1 WO2009075393 A1 WO 2009075393A1 KR 2007006409 W KR2007006409 W KR 2007006409W WO 2009075393 A1 WO2009075393 A1 WO 2009075393A1
Authority
WO
WIPO (PCT)
Prior art keywords
sputter
magnets
gun
pair
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2007/006409
Other languages
English (en)
Inventor
Do-Hyun Ryu
Sang-Hyun Lee
Han-Ki Kim
Jung-Hyeok Bae
Jong-Min Moon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Top Engineering Co Ltd
Original Assignee
Top Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Top Engineering Co Ltd filed Critical Top Engineering Co Ltd
Priority to PCT/KR2007/006409 priority Critical patent/WO2009075393A1/fr
Priority to CN2007801018848A priority patent/CN101897002B/zh
Publication of WO2009075393A1 publication Critical patent/WO2009075393A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Definitions

  • the present invention relates to a plasma-damage-free sputter gun capable of forming a layer at high speed, a sputter apparatus including the sputter gun, a plasma processing apparatus using the sputter gun, and a method of forming a layer using the sputter gun, and more particularly, to a plasma-damage-free sputter gun in which a plurality of magnets are arranged as a ladder type in the center of the sputter gun, unlike a conventional facing target sputter gun, to increase plasma density of a central portion of the sputter gun so that a layer can be formed at high speed during a plasma-damage- free sputter process, a sputter apparatus including the sputter gun, a plasma processing apparatus using the sputter gun, and a method of forming a layer using the sputter gun.
  • an organic photoelectric device or an organic transistor involves forming a metal electrode layer.
  • a sputter process is a representative method of forming a metal thin layer at high speed.
  • the sputter process is widely employed to form a metal thin layer for flat panel displays (FPDs), such as a thin film transistor liquid crystal display (TFT LCD) and an organic light emitting diode (OLED) device, and various electronic devices.
  • FPDs flat panel displays
  • TFT LCD thin film transistor liquid crystal display
  • OLED organic light emitting diode
  • plasma is generated in vacuum in a sputter chamber.
  • Plasma cations are pulled by a negative potential of a cathode with a target.
  • the plasma cations collide with the target and break into small particles to deposit the particles on a substrate.
  • the breaking of the plasma cations into small particles is referred to as sputtering.
  • the plasma is formed of an inert gas, for example, Ar gas.
  • the plasma is plasma of O 2 gas or plasma of a mixture of O 2 gas and an inert gas.
  • a magnet with a magnetic field is used near a target to maintain plasma over the target.
  • the magnetic field guides plasma electrons into a specific path.
  • the plasma electrons ionize a neutral gas (e.g., Ar gas) on the specific path to generate cations.
  • the cations are much heavier than the electrons and not affected by magnetic field in the least. However, the cations fall on the target functioning as a cathode and sputter the target.
  • the ionization of the neutral gas substantially occurs at a position where a magnetic field vector extends parallel to the surface of the target. Since plasma is densest at the position, the target is intensely eaten away at the position.
  • the sputter process includes generating plasma and colliding Ar ions of the plasma with a target to sputter a layer forming material.
  • particles contained in the plasma have high energy and sputtered particles also have high energy.
  • the energy is transmitted to the substrate so that the substrate may be heated up to a temperature of about 200 ° C and damaged.
  • the structural, optical, and electrical properties of the organic thin layer may be detrimentally affected.
  • a metal layer such as an Al layer, a Mg- Ag layer, or an Ag layer
  • a hole injection layer, a hole transport layer, and an emission layer which are formed of organic materials, collide with plasma particles with high energy and are degraded in terms of electrical and optical properties.
  • FIGS. IA through 1C are diagrams showing a magnet arrangement method and flux density distribution of a conventional rectangular facing target sputter gun.
  • the conventional facing target sputter gun is manufactured by arranging circular or rectangular central-hollow magnets. Yoke plates are attached to top and bottom sides of a central-hollow magnet to generally uniformize a magnetic field of the central- hollow magnet. In this case, the magnetic flux of the central-hollow magnet can be uniformized, but the flux intensity of a central portion of the magnet is reduced to lower plasma density.
  • an outer portion of the sputter gun since the magnets are arranged in an outer portion of a target, an outer portion of the sputter gun has a high flux density and a central portion of the sputter gun has a low flux density, thereby degrading a layer deposition rate.
  • charged particles can be confined due to a magnetic flux connected between one sputter gun and another sputter gun, a thin layer cannot be formed at high speed due to a low flux density of the central portion of the sputter gun, thereby increasing the time of formation of a thin layer. Therefore, it is necessary to develop a new plasma-damage-free sputter gun that increases the flux density of a central portion of the sputter gun to improve a layer deposition rate and confine plasma particles with high energy.
  • FIGS. 2 A and 2B are diagrams of a magnetic system 1 that moves over a target 2, which is disclosed in Korean Patent Laid-open Publication No. 2005-0082411.
  • the magnetic system 1 includes a frame-type outer magnet 3 and a bar-shaped inner magnet A .
  • the frame-type outer magnet 3 includes two long bar magnets 5 and 6 and two short bar magnets 7 and 8.
  • the short bar magnets 7 and 8 are arranged at right angles with the long bar magnets 5 and 6.
  • the bar magnets 5, 6, 7, and 8 are S -pole magnets
  • the inner magnet 4 is an N-pole magnet.
  • a magnetic field, which extends on a lateral surface of the magnetic system 1 is curved to describe a parabola, passes from the outer magnet 3 through the target 2, and extends to the inner magnet 4.
  • FIG. 2B is a cross-sectional view taken along line I-I of FIG. 2A.
  • FIGS. 2A and 2B magnetic fields 30 and 31 pass through the target 2 to describe parabolas.
  • a substrate 20 coated with the broken particles of the target 2 is disposed under the target 2.
  • Plasma generated by accelerating positive ions over negative ions (not shown) is in a space between the target 2 and the substrate 20, so that the target 2 is disposed near the magnet system 1 to form a unit for breaking particles of the target 2 in the above- described manner.
  • the entire apparatus shown in FIGS. 2A and 2B is disposed in a vacuum coating chamber 29.
  • the present invention is directed to a plasma-damage-free sputter gun, which confines particles with high energy generated by sputtering a thin layer between targets so as to perform a plasma-damage-free sputter process, a sputter apparatus including the sputter gun, a plasma processing apparatus using the sputter gun, and a method of forming a layer using the sputter gun.
  • the present invention is also directed to a plasma-damage-free sputter gun, in which magnets are arranged as a ladder type in the center of the sputter gun to maximize flux density and increase the deposition rate of a thin layer, a sputter apparatus including the sputter gun, a plasma processing apparatus using the sputter gun, and a method of forming a layer using the sputter gun.
  • One aspect of the present invention provides a sputter gun including: a yoke plate having a single-sided or double-sided opening; and a plurality of magnets disposed on the yoke plate at regular intervals.
  • Each of the magnets includes an upper portion and a lower portion, which are integrally formed and have different magnetic poles, and the magnets are arranged in a line.
  • Each of the magnets may have a "1 " shape.
  • Each of the magnets may have a square shape.
  • the number of the magnets may be controlled according to a layer deposition rate.
  • the sputter gun may include a module that is connected to the sputter gun and used.
  • the module may be movable.
  • Each of the magnets may be an electromagnet or a permanent magnet.
  • a sputter apparatus including: a pair of sputter guns, each comprising a yoke plate including a single-sided or double- sided opening and a plurality of magnets disposed on the yoke plate at regular intervals; targets respectively mounted on the pair of yoke plates; and a power source for supplying power to the targets.
  • a pair of sputter guns each comprising a yoke plate including a single-sided or double- sided opening and a plurality of magnets disposed on the yoke plate at regular intervals
  • targets respectively mounted on the pair of yoke plates
  • a power source for supplying power to the targets.
  • Each of the magnets includes an upper portion and a lower portion, which are integrally formed and have different magnetic poles, and the magnets are arranged in a line.
  • a plasma processing apparatus including: a vacuum chamber; a substrate support for supporting a substrate in the vacuum chamber; a pair of sputter guns facing the substrate, and each including a yoke plate having a single-sided or double-sided opening and a plurality of magnets disposed on the yoke plate at regular intervals; targets respectively mounted on the pair of yoke plates; a gun support for supporting the pair of sputter guns; and a power source for supplying power to the targets.
  • Each of the magnets may include an upper portion and a lower portion, which are integrally formed and have different magnetic poles, and the magnets are arranged in a line.
  • Still another aspect of the present invention provides a method of forming a layer using a plasma processing apparatus.
  • the plasma processing apparatus includes: a vacuum chamber, a substrate support for supporting a substrate in the vacuum chamber, a pair of sputter guns facing the subsirate and each including a yoke plate having a single-sided or double-sided opening and a plurality of magnets disposed on the yoke plate at regular intervals, targets respectively mounted on the pair of yoke plates, a gun support for supporting the pair of sputter guns, and a power source for supplying power to the targets.
  • the method includes: mounting the substrate on the substrate support; controlling the number of the magnets included in the pair of sputter guns and an interval between the magnets according to the size of the substrate; supplying power to the target; and generating plasma in the center of the target due to the target and the pair of sputter guns.
  • Each of the magnets includes an upper portion and a lower portion, which are integrally formed and have different magnetic poles, and the magnets are arranged in a line.
  • the metal electrode layer when the present invention is applied to a process of forming a metal electrode layer of an organic light emitting diode (OLED) device, the metal electrode layer can be deposited at high speed, thereby shortening a layer deposition time. Also, since a plasma-damage-free sputter gun according to the present invention can deposit a thin layer two to five times faster than a conventional facing target sputter gun, the metal electrode layer can be formed at high speed without causing plasma damage.
  • OLED organic light emitting diode
  • charged particles with high energy can be confined more effectively.
  • the confinement effect of the charged particles is elevated with an increase in flux density.
  • the efficiency of a target can be maximized. It is known that the efficiency of an ordinary sputter gun is less than 30%.
  • the sputter gun including magnets arranged as a ladder type according to the present invention can have a target efficiency of 70% or more due to the crowding of plasma into the center of the sputter gun. Since plasma is generated between the targets over the entire target, the entire target is sputtered, thereby maximizing the efficiency of the target.
  • an OLED device having good electrical and optical properties can be embodied.
  • a metal thin layer obtained using a sputter process has a higher density than a metal thin layer obtained using a thermal evaporator. Therefore, an OLED device including the sputtered metal thin layer can have good electrical and optical properties because there is a dense interface between an organic material and the metal thin layer.
  • a sputter gun including magnets arranged as a ladder type according to the present invention can be applied to the manufacture of large-sized OLED devices. It is difficult to apply a currently used point-source Al thermal evaporator to the manufacture of large-area OLED devices.
  • a large-sized sputter apparatus can be simply manufactured by increasing the number of the magnets of the sputter gun according to the present invention, so that the sputter gun according to the present invention can be used to manufacture large-area OLED devices.
  • FIGS. IA through 1C are diagrams showing a magnet arrangement method and flux density distribution of a conventional rectangular facing target sputter gun
  • FIGS. 2 A and 2B are diagrams of a magnetic system that moves over a target
  • FIGS. 3A through 3C are diagrams showing a plasma-damage-free sputter gun having ladder-shaped arrangement of magnets according to an exemplary embodiment of the present invention and flux density distribution of the sputter gun;
  • FIGS. 4 A through 4C are diagrams showing a plasma-damage-free sputter gun having ladder-shaped arrangement of magnets according to an optimal embodiment of the present invention and flux density distribution of the sputter gun;
  • FIG. 5 is a graph showing results of a comparison in a layer deposition rate between a conventional facing target sputter gun and a plasma-damage-free sputter gun having ladder-shaped arrangement of magnets according to an exemplary embodiment of the present invention
  • FIG. 6 is a view showing the construction of a plasma processing apparatus including a plasma-damage-free sputter gun according to an exemplary embodiment of the present invention.
  • the present invention provides a sputter gun, which can confine particles with high energy generated during a sputter process between targets and prevent damage of the thin layer due to collision of the particles with a substrate.
  • the sputter gun according to the present invention includes magnets arranged as a ladder type in the center of the sputter gun to increase the flux density of the center of the sputter gun, thereby increasing plasma density and the deposition rate of the thin layer.
  • the present invention not only the plasma density but also the deposition rate can be controlled by changing the ladder- shaped arrangement of the magnets, so that the uniformity of the thin layer can be improved.
  • FIGS. 3A through 3C are diagrams showing a plasma-damage-free sputter gun having ladder-shaped arrangement of magnets according to an exemplary embodiment of the present invention and flux density distribution of the sputter gun.
  • a central portion of the sputter gun is filled with some magnets, unlike a conventional facing target sputter gun, so that the flux density of the central portion of the sputter gun can be increased.
  • thin yoke plates formed of cast iron are attached to top and bottom sides of the magnets, so that high-density magnetic flux is uniformly generated between targets.
  • DC direct-current
  • RF radio-frequency
  • the efficiency of the target is increased. Also, while charged particles are being confined more efficiently due to the crowding of the flux into the center of the sputter gun than a conventional facing target sputter gun, a thin layer can be formed at high speed unlike the conventional facing target sputter gun.
  • the sputter gun shown in FIGS. 3A through 3C includes a yoke plate with a single- sided or double-sided opening, and a plurality of magnets (e.g., five magnets shown in FIG. 3) are arranged at regular intervals on the yoke plate.
  • Each of the magnets includes an upper portion and a lower portion, which are integrally formed and have different magnetic poles.
  • the five magnets of the sputter gun are arranged in a line.
  • the five magnets which are 1- shaped electromagnets or permanent magnets, constitute a single module. Accordingly, the deposition rate or the plasma density can be controlled by regulating the number of the magnets or adjusting an interval between the magnets, and the magnets can be connected as a module.
  • FIGS. 4 A through 4C are diagrams showing a plasma-damage-free sputter gun having ladder-shaped arrangement of magnets according to an optimal embodiment of the present invention and flux density distribution of the sputter gun.
  • magnets When only 1 -shaped magnets are arranged as the ladder type as shown in FIGS. 3 A through 3 C, the flux density of the center of the target can increase, but the flux density of an outer portion of the target decreases.
  • magnets may be also arranged to enclose the target so as to increase the flux density of the entire target.
  • square-shaped magnets are used as shown in FIGS. 4 A through 4C, so that not only the center of the target but also the outer portion of the target are sputtered, thereby maximizing the efficiency of the target and a layer deposition rate.
  • the deposition rate or plasma density can be controlled by regulating the number of the square-shaped magnets or adjusting an interval between the magnets, and the magnets can be connected as a module.
  • FIG. 5 is a graph showing results of a comparison between a conventional facing target sputter gun and a plasma-damage-free sputter gun having ladder-shaped arrangement of magnets according to an exemplary embodiment of the present invention in terms of the deposition rate of an Al thin layer.
  • the plasma density of a central portion of a target is increased due to magnets arranged as a ladder type in the center of the sputter gun, thereby maximizing the deposition rate of an Al thin layer.
  • the plasma-damage- free sputter gun according to the present invention can be applied to the manufacture of large-sized organic light emitting diode (OLED) devices.
  • FIGS. 3A through 3C or FIGS. 4A through 4C will be described with reference to FIG. 6.
  • FIG. 6 is a view showing the construction of a plasma processing apparatus including a plasma-damage-free sputter gun according to an exemplary embodiment of the present invention.
  • the plasma processing apparatus includes a vacuum chamber 100, which is filled with a reactive gas, a substrate support 102, which supports a substrate 101 in the vacuum chamber 100, a pair of sputter guns 104, each including a yoke plate having a single-sided or double-sided opening and a plurality of magnets arranged at regular intervals on the yoke plate, a target 105 mounted on each of a pair of yoke plates, a gun support 103, which supports the pair of sputter gun 104, and a power source (not shown), which supplies power to the targets 105.
  • a vacuum chamber 100 which is filled with a reactive gas
  • a substrate support 102 which supports a substrate 101 in the vacuum chamber 100
  • a pair of sputter guns 104 each including a yoke plate having a single-sided or double-sided opening and a plurality of magnets arranged at regular intervals on the yoke plate
  • a target 105 mounted on each of a pair of
  • Each of the sputter guns 104 shown in FIG. 6 has the same structure as described with reference to FIGS. 3 A through 3 C or FIGS. 4A through 4C.
  • the sputter guns 104 face each other, and the targets 105 are disposed on opposite surfaces of the sputter guns 104, respectively.
  • the substrate 101 mounted on the substrate support 102 can move toward the pair of sputter guns 104 by an ordinary shifter for the substrate support 102 as indicated by an arrow 110. Since the plasma processing apparatus uses the pair of sputter guns 104, which can deposit a thin layer two to five times faster than a conventional facing target sputter gun, the plasma processing apparatus can be easily applied to a substrate for large-area OLED devices.
  • the plasma processing apparatus can be easily applied to the substrate for the large-area OLED devices.
  • the substrate 101 is mounted on the substrate support 102.
  • the number and interval of the magnets prepared in the pair of sputter guns 104 shown in FIGS. 3A through 3C or 4A through 4C are controlled according to the size of the substrate 10.
  • the number of the magnets or an interval between the magnets is adjusted according to the size of the substrate 10 or a required plasma density. Also, it is determined whether the substrate 101 or the sputter gun 104 is to be moved or not.
  • the present invention can be applied to the manufacture of an organic photoelectric device or an organic transistor.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne un pistolet de pulvérisation n'endommageant pas le plasma, capable de former une couche à grande vitesse, un appareil de pulvérisation comprenant le pistolet de pulvérisation, un appareil de traitement plasma utilisant le pistolet de pulvérisation, et un procédé de formation d'une couche utilisant le pistolet de pulvérisation. Le pistolet de pulvérisation comprend : un palonnier comportant une ouverture d'un seul côté ou de deux côtés ; et une pluralité d'aimants disposés sur le palonnier à des intervalles réguliers. Chacun des aimants comprend des parties supérieure et inférieure formées d'un seul tenant et ayant des pôles magnétiques différents, et les aimants sont disposés en ligne. Par conséquent, il est possible de former une couche à grande vitesse sans endommager le plasma en utilisant le pistolet, les appareils et le procédé décrits ci-dessus.
PCT/KR2007/006409 2007-12-10 2007-12-10 Pistolet de pulvérisation n'endommageant pas le plasma, pulvérisation, appareil de traitement plasma et procédé de formation de film Ceased WO2009075393A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/KR2007/006409 WO2009075393A1 (fr) 2007-12-10 2007-12-10 Pistolet de pulvérisation n'endommageant pas le plasma, pulvérisation, appareil de traitement plasma et procédé de formation de film
CN2007801018848A CN101897002B (zh) 2007-12-10 2007-12-10 等离子体无损溅射枪、溅射装置、等离子体处理装置及薄膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/KR2007/006409 WO2009075393A1 (fr) 2007-12-10 2007-12-10 Pistolet de pulvérisation n'endommageant pas le plasma, pulvérisation, appareil de traitement plasma et procédé de formation de film

Publications (1)

Publication Number Publication Date
WO2009075393A1 true WO2009075393A1 (fr) 2009-06-18

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PCT/KR2007/006409 Ceased WO2009075393A1 (fr) 2007-12-10 2007-12-10 Pistolet de pulvérisation n'endommageant pas le plasma, pulvérisation, appareil de traitement plasma et procédé de formation de film

Country Status (2)

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CN (1) CN101897002B (fr)
WO (1) WO2009075393A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023018758A1 (fr) * 2021-08-10 2023-02-16 Virginia Commonwealth University Machines de pulvérisation, supports de substrat et procédés de pulvérisation avec polarisation magnétique

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04346662A (ja) * 1991-05-22 1992-12-02 Ube Ind Ltd スパッタリング方法およびその装置
JPH11117066A (ja) * 1997-10-14 1999-04-27 Matsushita Electric Ind Co Ltd スパッタリング装置及び方法
JP2001032067A (ja) * 1999-07-22 2001-02-06 Sanyo Shinku Kogyo Kk 成膜用磁石とそれを用いた成膜方法及びその装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04346662A (ja) * 1991-05-22 1992-12-02 Ube Ind Ltd スパッタリング方法およびその装置
JPH11117066A (ja) * 1997-10-14 1999-04-27 Matsushita Electric Ind Co Ltd スパッタリング装置及び方法
JP2001032067A (ja) * 1999-07-22 2001-02-06 Sanyo Shinku Kogyo Kk 成膜用磁石とそれを用いた成膜方法及びその装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023018758A1 (fr) * 2021-08-10 2023-02-16 Virginia Commonwealth University Machines de pulvérisation, supports de substrat et procédés de pulvérisation avec polarisation magnétique

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Publication number Publication date
CN101897002B (zh) 2012-04-18
CN101897002A (zh) 2010-11-24

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