[go: up one dir, main page]

WO2009072616A1 - Nonvolatile semiconductor memory element and nonvolatile semiconductor memory device - Google Patents

Nonvolatile semiconductor memory element and nonvolatile semiconductor memory device Download PDF

Info

Publication number
WO2009072616A1
WO2009072616A1 PCT/JP2008/072175 JP2008072175W WO2009072616A1 WO 2009072616 A1 WO2009072616 A1 WO 2009072616A1 JP 2008072175 W JP2008072175 W JP 2008072175W WO 2009072616 A1 WO2009072616 A1 WO 2009072616A1
Authority
WO
WIPO (PCT)
Prior art keywords
nonvolatile semiconductor
semiconductor memory
floating gate
electric charge
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/072175
Other languages
French (fr)
Japanese (ja)
Inventor
Masamichi Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toppan Inc
Original Assignee
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd filed Critical Toppan Printing Co Ltd
Priority to JP2009544747A priority Critical patent/JP5338680B2/en
Publication of WO2009072616A1 publication Critical patent/WO2009072616A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)

Abstract

When erasing an electric charge accumulated in a floating gate in a memory cell, a nonvolatile semiconductor memory element applies voltage between the floating gate and a drain (or a source) so as to generate a hot hole between bands in a semiconductor substrate, so that the hot hole erases the electric charge accumulated in the floating gate. Moreover, when erasing an electric charge accumulated in the floating gate, control is performed so that a threshold value between the control gate and the source of the memory cell is a desired value. Thus, the nonvolatile semiconductor memory cell can perform an erase operation without requiring a complicated control circuit.
PCT/JP2008/072175 2007-12-05 2008-12-05 Nonvolatile semiconductor memory element and nonvolatile semiconductor memory device Ceased WO2009072616A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009544747A JP5338680B2 (en) 2007-12-05 2008-12-05 Nonvolatile semiconductor memory device and nonvolatile semiconductor memory device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007315113 2007-12-05
JP2007-315113 2007-12-05
JP2007331380 2007-12-25
JP2007-331380 2007-12-25

Publications (1)

Publication Number Publication Date
WO2009072616A1 true WO2009072616A1 (en) 2009-06-11

Family

ID=40717794

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/072175 Ceased WO2009072616A1 (en) 2007-12-05 2008-12-05 Nonvolatile semiconductor memory element and nonvolatile semiconductor memory device

Country Status (2)

Country Link
JP (2) JP5338680B2 (en)
WO (1) WO2009072616A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI419166B (en) * 2010-01-08 2013-12-11 Yield Microelectronics Corp Low - pressure rapid erasure of nonvolatile memory
JP2014086722A (en) * 2013-09-04 2014-05-12 Floadia Co Ltd Nonvolatile semiconductor memory device
CN114864589A (en) * 2021-02-05 2022-08-05 旺宏电子股份有限公司 Semiconductor device and method of operating the same

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11134876A (en) * 1997-10-24 1999-05-21 Nec Corp Flash memory
JP2004281971A (en) * 2002-12-25 2004-10-07 Ememory Technology Inc Integrated circuit
JP2005175411A (en) * 2003-12-12 2005-06-30 Genusion:Kk Semiconductor device and its manufacturing method
JP2005197624A (en) * 2004-01-09 2005-07-21 Genusion:Kk Nonvolatile storage
WO2005096314A1 (en) * 2004-03-31 2005-10-13 Kitakyushu Foundation For The Advancement Of Industry, Science And Technology Semiconductor nonvolatile storage circuit
JP2008141150A (en) * 2006-11-10 2008-06-19 Sharp Corp Memory cell, method for erasing information recorded in the memory cell, and nonvolatile semiconductor memory device including the memory cell

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4923318B2 (en) * 1999-12-17 2012-04-25 ソニー株式会社 Nonvolatile semiconductor memory device and operation method thereof
JP2003091993A (en) * 2001-09-19 2003-03-28 Sony Corp Data storage device and nonvolatile semiconductor memory device usable therefor

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11134876A (en) * 1997-10-24 1999-05-21 Nec Corp Flash memory
JP2004281971A (en) * 2002-12-25 2004-10-07 Ememory Technology Inc Integrated circuit
JP2005175411A (en) * 2003-12-12 2005-06-30 Genusion:Kk Semiconductor device and its manufacturing method
JP2005197624A (en) * 2004-01-09 2005-07-21 Genusion:Kk Nonvolatile storage
WO2005096314A1 (en) * 2004-03-31 2005-10-13 Kitakyushu Foundation For The Advancement Of Industry, Science And Technology Semiconductor nonvolatile storage circuit
JP2008141150A (en) * 2006-11-10 2008-06-19 Sharp Corp Memory cell, method for erasing information recorded in the memory cell, and nonvolatile semiconductor memory device including the memory cell

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI419166B (en) * 2010-01-08 2013-12-11 Yield Microelectronics Corp Low - pressure rapid erasure of nonvolatile memory
JP2014086722A (en) * 2013-09-04 2014-05-12 Floadia Co Ltd Nonvolatile semiconductor memory device
CN114864589A (en) * 2021-02-05 2022-08-05 旺宏电子股份有限公司 Semiconductor device and method of operating the same

Also Published As

Publication number Publication date
JP5338680B2 (en) 2013-11-13
JP2013109824A (en) 2013-06-06
JPWO2009072616A1 (en) 2011-04-28
JP5477483B2 (en) 2014-04-23

Similar Documents

Publication Publication Date Title
TW200715571A (en) Semiconductor device
WO2009102423A3 (en) A single-polycrystalline silicon electrically erasable and programmable nonvolatile memory device
TWI317947B (en) Nand non-volatile storage device and methods of using and making the same
TW201129978A (en) A method and apparatus for operation of a NAND-like dual charge retaining transistor NOR flash memory device
TW200729732A (en) Voltage ramp rate control circuit, apparatus for applying erase potential or programming potential to non-volatile memory transistor, and method for performing write operating for memory device
TW200636725A (en) Non-volatile memory device and method of preventing hot electron program disturb phenomenon
TW200802384A (en) Method of programming and erasing a P-channel BE-SONOS nand flash memory
TW200709398A (en) Process for erasing chalcogenide variable resistance memory bits
WO2007089370A3 (en) Self-boosting method for flash memory cells
WO2008070578A3 (en) Method for reducing charge loss in analog floating gate cell
TW200717804A (en) Semiconductor device
WO2010056504A3 (en) Erase voltage reduction in a non-volatile memory device
TW200623428A (en) Non-volatile memory with erase gate on isolation zones
JP2006080247A5 (en)
TW200506946A (en) Method for programming, erasing and reading a flash memory cell
TW200741987A (en) Method for operating a single-poly single-transistor non-volatile memory cell
TW200743110A (en) Methods and apparatus for implementing bit-by-bit erase of a flash memory device
TW200638517A (en) Method for fabricating semiconductor device
WO2007087097A3 (en) Nonvolatile memory and method of program inhibition
WO2008028129A3 (en) Non-volatile memory cell in standard cmos process
JP2008541325A5 (en)
WO2009072616A1 (en) Nonvolatile semiconductor memory element and nonvolatile semiconductor memory device
TWI451423B (en) Method for operating non-volatile memory cells and memory device using the same
TW200701441A (en) Non-volatile memory and manufacturing method and operating method thereof
JP2007294082A5 (en)

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08857651

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2009544747

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08857651

Country of ref document: EP

Kind code of ref document: A1