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WO2009072402A1 - レジスト除去方法及びその装置 - Google Patents

レジスト除去方法及びその装置 Download PDF

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Publication number
WO2009072402A1
WO2009072402A1 PCT/JP2008/071085 JP2008071085W WO2009072402A1 WO 2009072402 A1 WO2009072402 A1 WO 2009072402A1 JP 2008071085 W JP2008071085 W JP 2008071085W WO 2009072402 A1 WO2009072402 A1 WO 2009072402A1
Authority
WO
WIPO (PCT)
Prior art keywords
ozone
substrate
gas
resist
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/071085
Other languages
English (en)
French (fr)
Inventor
Toshinori Miura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meidensha Corp
Meidensha Electric Manufacturing Co Ltd
Original Assignee
Meidensha Corp
Meidensha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Corp, Meidensha Electric Manufacturing Co Ltd filed Critical Meidensha Corp
Priority to CN2008801192088A priority Critical patent/CN101889330B/zh
Priority to US12/743,275 priority patent/US8574369B2/en
Publication of WO2009072402A1 publication Critical patent/WO2009072402A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

　レジスト除去装置１は９０°C以下の低温で基板上のレジストを除去できる。すなわち、レジスト除去装置１はレジスト１７の除去に供される基板１６を加熱可能に格納すると共に大気圧よりも低圧のもとオゾンガスと共に不飽和炭化水素ガスまたは不飽和炭化水素のフッ素置換体ガスが供給されるチャンバ２を備える。チャンバ２は基板１６の温度が９０°C以下となるように内圧が制御される。前記オゾンガスとしてはオゾン含有ガスを蒸気圧の差に基づいてオゾンのみを液化分離した後に再び気化して得られる超高濃度オゾンガスが挙げられる。前記処理した基板１６には洗浄するために超純水を供給するとよい。チャンバ２は基板１６を保持するサセプタ１５を備える。サセプタ２は赤外光を発する光源４によって加熱される。
PCT/JP2008/071085 2007-12-04 2008-11-20 レジスト除去方法及びその装置 Ceased WO2009072402A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2008801192088A CN101889330B (zh) 2007-12-04 2008-11-20 除去抗蚀剂的方法和用于它的装置
US12/743,275 US8574369B2 (en) 2007-12-04 2008-11-20 Method of removing resist and apparatus therefor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007314078 2007-12-04
JP2007-314078 2007-12-04

Publications (1)

Publication Number Publication Date
WO2009072402A1 true WO2009072402A1 (ja) 2009-06-11

Family

ID=40717584

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/071085 Ceased WO2009072402A1 (ja) 2007-12-04 2008-11-20 レジスト除去方法及びその装置

Country Status (5)

Country Link
US (1) US8574369B2 (ja)
JP (1) JP5217951B2 (ja)
KR (1) KR101214643B1 (ja)
CN (1) CN101889330B (ja)
WO (1) WO2009072402A1 (ja)

Cited By (1)

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US8056257B2 (en) * 2006-11-21 2011-11-15 Tokyo Electron Limited Substrate processing apparatus and substrate processing method

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US9175392B2 (en) * 2011-06-17 2015-11-03 Intermolecular, Inc. System for multi-region processing
WO2014051909A1 (en) * 2012-09-25 2014-04-03 Applied Materials, Inc. Chamber clean with in gas heating source
JP5971718B2 (ja) * 2012-10-29 2016-08-17 株式会社明電舎 半導体装置製造方法
JP6243815B2 (ja) * 2014-09-01 2017-12-06 信越化学工業株式会社 半導体装置基板の製造方法
KR101847538B1 (ko) * 2015-03-12 2018-04-10 메이덴샤 코포레이션 수지 개질 방법 및 장치
CN107614580B (zh) * 2015-05-21 2018-11-20 株式会社明电舍 用于改性树脂的方法和装置
JP7092478B2 (ja) * 2017-09-15 2022-06-28 株式会社Ｓｃｒｅｅｎホールディングス レジスト除去方法およびレジスト除去装置
US10978293B2 (en) 2018-03-28 2021-04-13 Meidensha Corporation Oxide film formation method
CN113196455B (zh) 2018-11-30 2023-06-13 株式会社明电舍 氧化膜形成装置
KR102699383B1 (ko) 2019-04-18 2024-08-26 삼성전자주식회사 웨이퍼 클리닝 장치
JP6860048B2 (ja) 2019-08-30 2021-04-14 株式会社明電舎 原子層堆積方法
KR102523437B1 (ko) 2020-12-29 2023-04-18 세메스 주식회사 기판 처리 장치 및 방법
JP7569752B2 (ja) * 2021-06-07 2024-10-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7431895B2 (ja) 2022-07-06 2024-02-15 明電ナノプロセス・イノベーション株式会社 基体の接合方法
CN118835312B (zh) * 2024-09-23 2025-10-17 瑶光半导体(浙江)有限公司 一种外延工艺的反应腔室及多片行星式外延设备

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JPS6481318A (en) * 1987-09-24 1989-03-27 Toshiba Corp Ashing of organic polymer film and device therefor
JPH04150013A (ja) * 1990-10-15 1992-05-22 Hitachi Ltd レジストアッシング方法
JPH0574742A (ja) * 1991-02-22 1993-03-26 Miyagi Oki Denki Kk Ａｌ合金のドライエツチング後の腐蝕防止方法
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Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6481318A (en) * 1987-09-24 1989-03-27 Toshiba Corp Ashing of organic polymer film and device therefor
JPH04150013A (ja) * 1990-10-15 1992-05-22 Hitachi Ltd レジストアッシング方法
JPH0574742A (ja) * 1991-02-22 1993-03-26 Miyagi Oki Denki Kk Ａｌ合金のドライエツチング後の腐蝕防止方法
JP2001308078A (ja) * 2000-02-15 2001-11-02 Canon Inc 有機物除去方法、半導体装置の製造方法及び有機物除去装置並びにシステム

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8056257B2 (en) * 2006-11-21 2011-11-15 Tokyo Electron Limited Substrate processing apparatus and substrate processing method

Also Published As

Publication number Publication date
KR101214643B1 (ko) 2012-12-21
CN101889330A (zh) 2010-11-17
JP5217951B2 (ja) 2013-06-19
JP2009157355A (ja) 2009-07-16
KR20100080942A (ko) 2010-07-13
CN101889330B (zh) 2012-11-14
US20100300482A1 (en) 2010-12-02
US8574369B2 (en) 2013-11-05

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