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WO2009071645A2 - Substrat composite silicium-céramique - Google Patents

Substrat composite silicium-céramique Download PDF

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Publication number
WO2009071645A2
WO2009071645A2 PCT/EP2008/066837 EP2008066837W WO2009071645A2 WO 2009071645 A2 WO2009071645 A2 WO 2009071645A2 EP 2008066837 W EP2008066837 W EP 2008066837W WO 2009071645 A2 WO2009071645 A2 WO 2009071645A2
Authority
WO
WIPO (PCT)
Prior art keywords
silicon
ceramic
composite substrate
substrate
ceramic composite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2008/066837
Other languages
German (de)
English (en)
Other versions
WO2009071645A3 (fr
Inventor
Michael Fischer
Heike Bartsch De Torres
Martin Hoffmann
Jens Müller
Beate Pawlowski
Stefan Barth
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Institut fuer Keramische Technologien und Systeme IKTS
Technische Universitaet Ilmenau
Original Assignee
Fraunhofer Institut fuer Keramische Technologien und Systeme IKTS
Technische Universitaet Ilmenau
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Institut fuer Keramische Technologien und Systeme IKTS, Technische Universitaet Ilmenau filed Critical Fraunhofer Institut fuer Keramische Technologien und Systeme IKTS
Priority to US12/746,759 priority Critical patent/US8391013B2/en
Priority to PL08856359T priority patent/PL2218101T3/pl
Priority to SI200831950T priority patent/SI2218101T1/en
Priority to EP08856359.8A priority patent/EP2218101B1/fr
Publication of WO2009071645A2 publication Critical patent/WO2009071645A2/fr
Publication of WO2009071645A3 publication Critical patent/WO2009071645A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24521—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness with component conforming to contour of nonplanar surface
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24521—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness with component conforming to contour of nonplanar surface
    • Y10T428/24545—Containing metal or metal compound

Definitions

  • the present invention relates to a composite substrate of silicon and ceramic according to the preamble of claim 1.
  • the integration of semiconductor chips on a ceramic carrier substrate which may have a wiring structure and passive electronic components and is used for electrical connection of an overall system, is an established method.
  • the bond between the finished semiconductor chip and the ceramic carrier is usually realized by means of connection methods such as flip-chip bonding, various soldering techniques or bonding methods followed by wire bonding to produce the electrical connection.
  • connection methods such as flip-chip bonding, various soldering techniques or bonding methods followed by wire bonding to produce the electrical connection.
  • these joining techniques always work with additional auxiliaries such as metallizations, solders or special adhesives and usually cause a high adjustment and assembly costs.
  • Process steps such as grinding and polishing, are prepared for the bonding process.
  • an additional device for anodic bonding is required. Even small disruptions of the surface or deposited particles lead to gas inclusions, which adversely affect the durability of the compound.
  • a simple silicon-ceramic composite can be produced by laminating and sintering the composite partners [M. Fischer et. al, Bonding of ceramic and Silicon - new options and applica- tions, Smart Systems Integration, 2007] by first laminating the unfired ceramic onto a nanostructured silicon surface. Subsequently, the sintering process takes place. This eliminates the costly polishing of the ceramic.
  • the object of the present invention is to provide a silicon-ceramic composite substrate with high mechanical strength and variable functionality, which can be produced inexpensively and without auxiliary agent, and can be further processed using the known standard semiconductor process technology. According to the invention, the solution to this problem by a silicon-ceramic composite substrate with the features of claim 1 or 10 succeeds.
  • the silicon-ceramic composite substrate according to the invention comprises a low-temperature ceramic with at least one pre-structured ceramic layer and a silicon substrate.
  • the surface of the silicon substrate has nanostructures in a contact region with the low-temperature ceramic, which have completely penetrated into the low-temperature ceramic.
  • the low-temperature ceramic forms a carrier layer for the silicon substrate, which can be processed by means of known semiconductor technologies.
  • the nanostructures are formed of the so-called “black-silicone”, which has needle-like tips.
  • the thermal expansion behavior of the low-temperature ceramic is advantageously adapted to the expansion behavior of the silicon substrate, so that stress at the connection point is minimized.
  • unburned ceramic films are pre-structured one or more layers, ie with tracks, vias (vias), fluid channels or with Provided resistors, capacitors and / or coils. Pre-structuring is done using standard techniques such as punching, via-filling, screen printing or laser processing. The ceramic films are then stacked to produce the desired functionality and to produce a carrier layer.
  • the silicon substrate On the silicon substrate, a nanostructure is applied. Subsequently, the silicon substrate is laminated to the carrier layer under the action of temperature and pressure and sintered the resulting composite.
  • the binding mechanism used differs from anodic bonding, it is advantageously possible to dispense with the sodium-containing glasses in low-temperature ceramics required for anodic bonding and to produce a semiconductor-compatible composite substrate which forms the basis for various MEMS (Micro-Electro-Mechanical System) applications ,
  • Fig. 1 - a schematic representation of the method steps for producing a silicon-ceramic composite substrate according to the invention
  • Fig. 3 - a schematic representation of the singulation of silicon chips on a silicon-ceramic composite substrate.
  • FIG. 1 shows a schematic representation of the method steps for producing a silicon-ceramic composite substrate 01 according to the invention.
  • the silicon substrate 03 is preferably a silicon wafer which is completely or partially nanostructured.
  • the nanostructure 06 of the surface of the silicon substrate 03 can be realized, for example, by a self-masking plasma etching process, wherein the geometric dimensions of the needle-like nanostructures 06 produced thereby are preferably matched to the powder morphology of the unfired low-temperature ceramic 02 (for example the grain size of the solids of the green ceramic).
  • An advantageous needle structure it has spacings of the needles, which are in the range of grain size of the solids of the raw ceramics.
  • the lamination is carried out in a press (indicated by the arrows 07), for example at temperatures between 80 0 C and 120 ° C in a period of 1 to 30 minutes.
  • the needle-like nanostructures 06 completely penetrate into the low-temperature ceramic 02 during lamination 07 and thus produce a tight connection, which allows, for example, the passage of fluid channels along the silicon in the low-temperature ceramic. This can be advantageous for cooling the structure later produced in silicon.
  • the cooling channels thus generated have a particularly effective effect on the silicon, due to the increased surface area through the nanostructure 06.
  • Fig. 2 shows a schematic representation of a preferred embodiment of the invention. If a metallization 09 is applied to the needles of the nanostructure 06 before the lamination, an electrical bond between the conductor tracks (not shown) or metal vias 11 present on the low-temperature ceramic 02 and the metallization 09 provided on the silicon substrate 03 can be produced during the sintering become.
  • the resulting silicon-ceramic composite substrate 01 which is characterized by a very high strength, preferably has the outer contour of a standard wafer (eg 4 ”) and is therefore compatible with all systems and devices for subsequent semiconductor processing (lithography, thin-film). Layering techniques, plasma structuring methods, etc.) compatible.
  • the silicon substrate 03 itself does not have to have high mechanical strength, since the low-temperature ceramic 02 assumes the carrier function during the subsequent, subsequent technological steps. This means that the silicon substrate 03 must be made only so thick that the electronic functions are guaranteed, which in turn has a significant material savings result.
  • the process time, for example, during etching can be greatly reduced if the silicon layer only has a minimum thickness.
  • An advantageous thickness of the silicon substrate 03 is approximately in the range of 50 to 100 microns.
  • chips 12 can be separated in the silicon plane. This can be done by standard silicon etching processes (e.g., reactive ion etching - DRIE), where the surface of low temperature ceramic 02 acts as a natural etch stop.
  • standard silicon etching processes e.g., reactive ion etching - DRIE

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Laminated Bodies (AREA)
  • Ceramic Products (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

L'invention concerne un substrat composite silicium-céramique (01) qui comprend une céramique basse température (02) ayant au moins une couche céramique préstructurée, ainsi qu'un substrat de silicium (03). Selon l'invention, la céramique basse température (02) forme une couche support et la surface du substrat de silicium présente dans une zone de contact (04) avec la couche support des nanostructures (06) qui ont entièrement pénétré dans la céramique basse température (02).
PCT/EP2008/066837 2007-12-06 2008-12-04 Substrat composite silicium-céramique Ceased WO2009071645A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/746,759 US8391013B2 (en) 2007-12-06 2008-12-04 Silicon-ceramic composite substrate
PL08856359T PL2218101T3 (pl) 2007-12-06 2008-12-04 Podłoże kompozytowe krzemowo-ceramiczne i jego wytwarzanie
SI200831950T SI2218101T1 (en) 2007-12-06 2008-12-04 Silicon-ceramic composite substrate and its manufacture
EP08856359.8A EP2218101B1 (fr) 2007-12-06 2008-12-04 Silicon-ceramic composite substrate et sa fabrication

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007059609 2007-12-06
DE102007059609.1 2007-12-06

Publications (2)

Publication Number Publication Date
WO2009071645A2 true WO2009071645A2 (fr) 2009-06-11
WO2009071645A3 WO2009071645A3 (fr) 2009-11-12

Family

ID=40639500

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2008/066837 Ceased WO2009071645A2 (fr) 2007-12-06 2008-12-04 Substrat composite silicium-céramique

Country Status (5)

Country Link
US (1) US8391013B2 (fr)
EP (1) EP2218101B1 (fr)
PL (1) PL2218101T3 (fr)
SI (1) SI2218101T1 (fr)
WO (1) WO2009071645A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009059304A1 (de) 2009-12-23 2011-06-30 CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, 99099 Elektronische/optische Komponenten mit einem daran befestigten Kabel und Verfahen zur Befestigung des Kabels

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9640419B2 (en) * 2014-08-04 2017-05-02 Infineon Technologies Ag Carrier system for processing semiconductor substrates, and methods thereof
US9368436B2 (en) * 2014-08-04 2016-06-14 Infineon Technologies Ag Source down semiconductor devices and methods of formation thereof
DE102018103372A1 (de) 2017-09-04 2019-03-07 Technische Universität Ilmenau Verfahren zur Herstellung eines mikro-elektrofluidischen Moduls und seine Verwendung
DE102020103487B4 (de) 2020-02-11 2022-05-12 Koa Corporation Verfahren zur Herstellung eines Glas-Keramik-Verbundsubstrates

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JP3284921B2 (ja) * 1997-04-24 2002-05-27 富士電機株式会社 加速度センサならびに角加速度センサおよびそれらの製造方法
US6544651B2 (en) * 2000-05-18 2003-04-08 Georgia Tech Research Corp. High dielectric constant nano-structure polymer-ceramic composite
US7235745B2 (en) * 2005-01-10 2007-06-26 Endicott Interconnect Technologies, Inc. Resistor material with metal component for use in circuitized substrates, circuitized substrate utilizing same, method of making said ciruitized substrate, and information handling system utilizing said ciruitized substrate
JP2006133245A (ja) * 2006-02-16 2006-05-25 Mitsubishi Electric Corp 容量式加速度センサ
US7623340B1 (en) * 2006-08-07 2009-11-24 Nanotek Instruments, Inc. Nano-scaled graphene plate nanocomposites for supercapacitor electrodes
KR20100073704A (ko) * 2008-12-23 2010-07-01 삼성전기주식회사 복합산화물 나노 입자의 제조방법 및 그로부터 제조된 복합산화물 나노입자

Non-Patent Citations (3)

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Title
GESSNER (ED): "Smart Systems Integration 2007" 28. März 2007 (2007-03-28), VDE VERLAG , PARIS , XP008109494 in der Anmeldung erwähnt Seite 477 - Seite 479 *
See also references of EP2218101A2 *
STUBENRAUCH M ET AL: "Black silicon-new functionalities in microsystems; Black silicon---new functionalities in microsystems" JOURNAL OF MICROMECHANICS & MICROENGINEERING, INSTITUTE OF PHYSICS PUBLISHING, BRISTOL, GB, Bd. 16, Nr. 6, 1. Juni 2006 (2006-06-01), Seiten S82-S87, XP020105022 ISSN: 0960-1317 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009059304A1 (de) 2009-12-23 2011-06-30 CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, 99099 Elektronische/optische Komponenten mit einem daran befestigten Kabel und Verfahen zur Befestigung des Kabels
DE102009059304B4 (de) * 2009-12-23 2014-07-03 CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH Siliziumchip mit einem daran befestigten Kabel und Verfahen zur Befestigung des Kabels

Also Published As

Publication number Publication date
WO2009071645A3 (fr) 2009-11-12
PL2218101T3 (pl) 2018-08-31
EP2218101B1 (fr) 2018-02-14
SI2218101T1 (en) 2018-07-31
EP2218101A2 (fr) 2010-08-18
US20100254099A1 (en) 2010-10-07
US8391013B2 (en) 2013-03-05

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