[go: up one dir, main page]

WO2009063844A1 - 半導体素子ならびに半導体素子製造法 - Google Patents

半導体素子ならびに半導体素子製造法 Download PDF

Info

Publication number
WO2009063844A1
WO2009063844A1 PCT/JP2008/070458 JP2008070458W WO2009063844A1 WO 2009063844 A1 WO2009063844 A1 WO 2009063844A1 JP 2008070458 W JP2008070458 W JP 2008070458W WO 2009063844 A1 WO2009063844 A1 WO 2009063844A1
Authority
WO
WIPO (PCT)
Prior art keywords
face
semiconductor device
silicon carbide
semiconductor substrate
nonpolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/070458
Other languages
English (en)
French (fr)
Inventor
Hiroyuki Nagasawa
Naoki Hatta
Takamitsu Kawahara
Hikaru Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to EP08849670A priority Critical patent/EP2221859A4/en
Priority to US12/742,398 priority patent/US20110006310A1/en
Priority to CN2008801166609A priority patent/CN101919032A/zh
Publication of WO2009063844A1 publication Critical patent/WO2009063844A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Element Separation (AREA)

Abstract

本発明は、炭化珪素からなる半導体基板と、前記半導体基板上に形成されるゲート絶縁膜と、前記ゲート絶縁膜上に形成されるゲート電極とを有する半導体素子である。前記半導体基板表面の前記ゲート絶縁膜との接合面は、巨視的には非極性面に平行であり、かつ微視的には非極性面と極性面からなり、前記極性面ではSi面またはC面のいずれか一方の面が優勢である。炭化珪素からなる半導体基板と、前記半導体基板上に形成される電極とを有する半導体素子。前記半導体基板表面の前記電極との接合面は、巨視的には非極性面に平行であり、かつ微視的には非極性面と極性面からなり、前記極性面ではSi面またはC面のいずれか一方の面が優勢である。本発明は、炭化珪素を基板とする半導体素子であって、基板の欠陥密度に関わらず、炭化珪素エピタキシャル層の非極性面上において、電極/炭化珪素界面、あるいは酸化膜(絶縁膜)/炭化珪素界面の電気的特性と安定性を向上させることができる。
PCT/JP2008/070458 2007-11-12 2008-11-11 半導体素子ならびに半導体素子製造法 Ceased WO2009063844A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP08849670A EP2221859A4 (en) 2007-11-12 2008-11-11 SEMICONDUCTOR COMPONENT AND SEMICONDUCTOR COMPONENT MANUFACTURING METHOD
US12/742,398 US20110006310A1 (en) 2007-11-12 2008-11-11 Semiconductor device and semiconductor device manufacturing method
CN2008801166609A CN101919032A (zh) 2007-11-12 2008-11-11 半导体元件以及半导体元件制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007293258A JP5307381B2 (ja) 2007-11-12 2007-11-12 半導体素子ならびに半導体素子製造法
JP2007-293258 2007-11-12

Publications (1)

Publication Number Publication Date
WO2009063844A1 true WO2009063844A1 (ja) 2009-05-22

Family

ID=40638693

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/070458 Ceased WO2009063844A1 (ja) 2007-11-12 2008-11-11 半導体素子ならびに半導体素子製造法

Country Status (6)

Country Link
US (1) US20110006310A1 (ja)
EP (1) EP2221859A4 (ja)
JP (1) JP5307381B2 (ja)
KR (1) KR20100110295A (ja)
CN (1) CN101919032A (ja)
WO (1) WO2009063844A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009188030A (ja) * 2008-02-04 2009-08-20 Sumitomo Electric Ind Ltd 半導体装置およびその製造方法
WO2013051555A1 (ja) * 2011-10-07 2013-04-11 旭硝子株式会社 炭化ケイ素単結晶基板および研磨液
US8728941B2 (en) 2010-03-16 2014-05-20 Sharp Kabushiki Kaisha Semiconductor apparatus and manufacturing method of same
EP2602823A4 (en) * 2010-08-03 2017-08-16 Sumitomo Electric Industries, Ltd. Semiconductor device and process for production thereof
US10283594B2 (en) 2016-09-02 2019-05-07 Sumitomo Electric Industries, Ltd. SiC structure, semiconductor device having SiC structure, and process of forming the same

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011111627A1 (ja) 2010-03-12 2011-09-15 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
GB2484506A (en) * 2010-10-13 2012-04-18 Univ Warwick Heterogrowth
JP5343984B2 (ja) 2011-01-17 2013-11-13 株式会社デンソー 化合物半導体基板およびその製造方法
WO2012131898A1 (ja) * 2011-03-29 2012-10-04 株式会社日立製作所 炭化珪素半導体装置
JP5879770B2 (ja) * 2011-06-27 2016-03-08 住友電気工業株式会社 半導体装置およびその製造方法
US9885124B2 (en) * 2011-11-23 2018-02-06 University Of South Carolina Method of growing high quality, thick SiC epitaxial films by eliminating silicon gas phase nucleation and suppressing parasitic deposition
JP5759393B2 (ja) * 2012-01-12 2015-08-05 住友電気工業株式会社 炭化珪素半導体装置の製造方法
US9318558B2 (en) * 2012-07-09 2016-04-19 Hitachi, Ltd. MOS field effect transistor
JP6070155B2 (ja) 2012-12-18 2017-02-01 住友電気工業株式会社 炭化珪素半導体装置
US11721547B2 (en) 2013-03-14 2023-08-08 Infineon Technologies Ag Method for manufacturing a silicon carbide substrate for an electrical silicon carbide device, a silicon carbide substrate and an electrical silicon carbide device
DE112015003559B4 (de) 2014-08-01 2024-08-22 Sumitomo Electric Industries, Ltd. Epitaxialer Wafer
WO2016031439A1 (ja) * 2014-08-29 2016-03-03 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
WO2016051935A1 (ja) * 2014-10-03 2016-04-07 日本碍子株式会社 半導体素子用のエピタキシャル基板およびその製造方法
FI126189B (fi) * 2015-09-21 2016-08-15 Innohome Oy Valvonta- ja ohjausmenetelmä huonon ilmanlaadun ja tulipalon ehkäisemiseksi sekä vaarallisen tilan hälyttämiseksi
JP6865431B2 (ja) * 2017-02-16 2021-04-28 国立大学法人埼玉大学 エッチング方法
JP6721062B2 (ja) * 2017-02-16 2020-07-08 信越化学工業株式会社 化合物半導体積層基板及びその製造方法、並びに半導体素子
US10659175B2 (en) * 2018-07-16 2020-05-19 Litepoint Corporation System and method for over-the-air (OTA) testing to detect faulty elements in an active array antenna of an extremely high frequency (EHF) wireless communication device
GB2575804A (en) * 2018-07-23 2020-01-29 Sumitomo Chemical Co Top gate gas sensor
IT201900007217A1 (it) * 2019-05-24 2020-11-24 Consiglio Nazionale Ricerche Dispositivo elettronico basato su sic di tipo migliorato e metodo di fabbricazione dello stesso
US11430867B2 (en) * 2020-01-24 2022-08-30 Taiwan Semiconductor Manufacturing Co., Ltd. Channel mobility improvement
CN113178487A (zh) 2020-01-24 2021-07-27 台湾积体电路制造股份有限公司 半导体器件
EP4210903A4 (en) * 2020-09-08 2024-10-16 Applied Materials, Inc. SYSTEMS AND METHODS FOR HANDLING SUBSTRATE FOR CMP PROCESSING
US20230061775A1 (en) * 2021-08-26 2023-03-02 IceMos Technology Limited Semiconductor Device and Method of Providing Rad Hard Power Transistor with 1200v Breakdown Voltage

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1116840A (ja) * 1997-06-19 1999-01-22 Mitsubishi Electric Corp ＳｉＣ半導体装置とその製造方法
JP2000044396A (ja) 1998-07-29 2000-02-15 Toyota Central Res & Dev Lab Inc 炭化珪素単結晶の製造方法
JP2000294777A (ja) * 1999-04-08 2000-10-20 Mitsubishi Electric Corp 半導体装置及びその製造方法
WO2000068474A1 (fr) 1999-05-07 2000-11-16 Sixon Inc. Plaquette en sic, dispositif a semiconducteur en sic et procede de fabrication de plaquette en sic
JP2003119097A (ja) 2001-10-12 2003-04-23 Toyota Central Res & Dev Lab Inc ＳｉＣ単結晶及びその製造方法並びにＳｉＣ種結晶及びその製造方法
JP2004207511A (ja) * 2002-12-25 2004-07-22 Denso Corp 炭化珪素半導体装置
JP2005166930A (ja) * 2003-12-02 2005-06-23 Matsushita Electric Ind Co Ltd ＳｉＣ−ＭＩＳＦＥＴ及びその製造方法
JP2006066722A (ja) 2004-08-27 2006-03-09 Shikusuon:Kk エピタキシャルＳｉＣ膜とその製造方法およびＳｉＣ半導体デバイス
JP2006156478A (ja) 2004-11-25 2006-06-15 Mitsubishi Electric Corp 炭化珪素半導体装置およびその製造方法
JP2006351744A (ja) 2005-06-15 2006-12-28 Fuji Electric Holdings Co Ltd 炭化珪素半導体装置の製造方法
JP2007123487A (ja) * 2005-10-27 2007-05-17 Toyota Motor Corp 半導体材料及びその製造方法、並びに半導体素子
WO2007125617A1 (ja) * 2006-04-28 2007-11-08 Sumitomo Electric Industries, Ltd. 半導体装置およびその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3461274B2 (ja) * 1996-10-16 2003-10-27 株式会社東芝 半導体装置
JP2003234301A (ja) * 2001-10-25 2003-08-22 Matsushita Electric Ind Co Ltd 半導体基板、半導体素子及びその製造方法
EP1306890A2 (en) * 2001-10-25 2003-05-02 Matsushita Electric Industrial Co., Ltd. Semiconductor substrate and device comprising SiC and method for fabricating the same
CN1906767B (zh) * 2004-02-27 2012-06-13 罗姆股份有限公司 半导体装置及其制造方法
US7989926B2 (en) * 2005-09-20 2011-08-02 Showa Denko K.K. Semiconductor device including non-stoichiometric silicon carbide layer and method of fabrication thereof
JP5037003B2 (ja) * 2005-11-25 2012-09-26 一般財団法人電力中央研究所 ショットキーバリアダイオードおよびその使用方法

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1116840A (ja) * 1997-06-19 1999-01-22 Mitsubishi Electric Corp ＳｉＣ半導体装置とその製造方法
JP2000044396A (ja) 1998-07-29 2000-02-15 Toyota Central Res & Dev Lab Inc 炭化珪素単結晶の製造方法
JP2000294777A (ja) * 1999-04-08 2000-10-20 Mitsubishi Electric Corp 半導体装置及びその製造方法
WO2000068474A1 (fr) 1999-05-07 2000-11-16 Sixon Inc. Plaquette en sic, dispositif a semiconducteur en sic et procede de fabrication de plaquette en sic
JP2000319099A (ja) 1999-05-07 2000-11-21 Hiroyuki Matsunami ＳｉＣウエハ、ＳｉＣ半導体デバイス、および、ＳｉＣウエハの製造方法
JP2003119097A (ja) 2001-10-12 2003-04-23 Toyota Central Res & Dev Lab Inc ＳｉＣ単結晶及びその製造方法並びにＳｉＣ種結晶及びその製造方法
JP2004207511A (ja) * 2002-12-25 2004-07-22 Denso Corp 炭化珪素半導体装置
JP2005166930A (ja) * 2003-12-02 2005-06-23 Matsushita Electric Ind Co Ltd ＳｉＣ−ＭＩＳＦＥＴ及びその製造方法
JP2006066722A (ja) 2004-08-27 2006-03-09 Shikusuon:Kk エピタキシャルＳｉＣ膜とその製造方法およびＳｉＣ半導体デバイス
JP2006156478A (ja) 2004-11-25 2006-06-15 Mitsubishi Electric Corp 炭化珪素半導体装置およびその製造方法
JP2006351744A (ja) 2005-06-15 2006-12-28 Fuji Electric Holdings Co Ltd 炭化珪素半導体装置の製造方法
US20070015333A1 (en) 2005-06-15 2007-01-18 Fuji Electric Holdings Co., Ltd. Method for manufacturing silicon carbide semiconductor devices
JP2007123487A (ja) * 2005-10-27 2007-05-17 Toyota Motor Corp 半導体材料及びその製造方法、並びに半導体素子
WO2007125617A1 (ja) * 2006-04-28 2007-11-08 Sumitomo Electric Industries, Ltd. 半導体装置およびその製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2221859A4

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009188030A (ja) * 2008-02-04 2009-08-20 Sumitomo Electric Ind Ltd 半導体装置およびその製造方法
US8728941B2 (en) 2010-03-16 2014-05-20 Sharp Kabushiki Kaisha Semiconductor apparatus and manufacturing method of same
EP2602823A4 (en) * 2010-08-03 2017-08-16 Sumitomo Electric Industries, Ltd. Semiconductor device and process for production thereof
WO2013051555A1 (ja) * 2011-10-07 2013-04-11 旭硝子株式会社 炭化ケイ素単結晶基板および研磨液
US10040972B2 (en) 2011-10-07 2018-08-07 Asahi Glass Company, Limited Single crystal silicon-carbide substrate and polishing solution
US10138397B2 (en) 2011-10-07 2018-11-27 AGC Inc. Single-crystal silicon-carbide substrate and polishing solution
US10283594B2 (en) 2016-09-02 2019-05-07 Sumitomo Electric Industries, Ltd. SiC structure, semiconductor device having SiC structure, and process of forming the same

Also Published As

Publication number Publication date
EP2221859A4 (en) 2013-03-13
JP2009123753A (ja) 2009-06-04
CN101919032A (zh) 2010-12-15
US20110006310A1 (en) 2011-01-13
KR20100110295A (ko) 2010-10-12
EP2221859A1 (en) 2010-08-25
JP5307381B2 (ja) 2013-10-02

Similar Documents

Publication Publication Date Title
WO2009063844A1 (ja) 半導体素子ならびに半導体素子製造法
EP1970945A3 (en) Method of manufacturing silicon carbide semiconductor device
SG149774A1 (en) Buried contact devices for nitride-based films and manufacture therof
EP2040301A3 (en) Semiconductor device and method of manufacturing the same
TW200636992A (en) Semiconductor device edge termination structure and method
WO2007130188A3 (en) Solar cell having doped semiconductor heterojunction contacts
DE502008000072D1 (de) Schaltungsanordnung mit Verbindungseinrichtung sowie Herstellungsverfahren hierzu
MY171189A (en) Solar cell having an emitter region with wide bandgap semiconductor material
WO2011072027A3 (en) Reverse side engineered iii-nitride devices
EP1962330A3 (en) Method for manufacturing SIC semiconductor device
TW200614377A (en) A support for hybrid epitaxy, and a method of fabricating it
JP2011054949A5 (ja) 半導体装置
TW200703642A (en) Semiconductor device having a lateral channel and contacts on opposing surfaces thereof
EP4372824A3 (en) Semiconductor device, and method for manufacturing the same
TW200515474A (en) Semiconductor device and fabrication method thereof
TW201130057A (en) Semiconductor device and manufacturing method thereof
WO2011063228A3 (en) Betavoltaic apparatus and method
CN107039245B (zh) 提高氧化镓材料导热性的方法
CN103296013B (zh) 射频器件的形成方法
EP2600402A4 (en) SEMICONDUCTOR DEVICE
JP2014139967A5 (ja)
WO2009013967A1 (ja) 半導体装置
EP2575179A3 (en) Compound semiconductor device and manufacturing method therefor
TW200607094A (en) Semiconductor device and method of manufacturing thereof
WO2011096684A3 (en) Method for manufacturing galium naitride wafer

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880116660.9

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08849670

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20107012801

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 2008849670

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 12742398

Country of ref document: US