[go: up one dir, main page]

WO2009063645A1 - 不揮発性記憶装置およびその製造方法 - Google Patents

不揮発性記憶装置およびその製造方法 Download PDF

Info

Publication number
WO2009063645A1
WO2009063645A1 PCT/JP2008/003325 JP2008003325W WO2009063645A1 WO 2009063645 A1 WO2009063645 A1 WO 2009063645A1 JP 2008003325 W JP2008003325 W JP 2008003325W WO 2009063645 A1 WO2009063645 A1 WO 2009063645A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
electrode layer
manufacturing
current control
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/003325
Other languages
English (en)
French (fr)
Inventor
Yoshio Kawashima
Takumi Mikawa
Ryoko Miyanaga
Takeshi Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Priority to US12/742,841 priority Critical patent/US8242479B2/en
Priority to JP2009541050A priority patent/JP4427630B2/ja
Priority to CN2008801160547A priority patent/CN101861649B/zh
Publication of WO2009063645A1 publication Critical patent/WO2009063645A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode

Landscapes

  • Semiconductor Memories (AREA)

Abstract

　第１の配線（１１）と第２の配線（１４）の交差部に形成されたビアホール（１２）と、電流制御層（１３ｂ）が第１の電極層（１３ａ）と第２の電極層（１３ｃ）に挟まれた電流制御素子（１３）とを備え、ビアホール（１２）内に抵抗変化素子（１５）が形成され、第１の電極層（１３ａ）はビアホール（１２）を被覆するように配置され、電流制御層（１３ｂ）は第１の電極層（１３ａ）を被覆するように配置され、第２の電極層（１３ｃ）は電流制御層（１３ｂ）の上に配置され、第２の配線の配線層（１４ａ）は第２の電極層（１３ｃ）の上に配置され、第２の配線（１４）は電流制御層（１３ｂ）と第２の電極層（１３ｃ）と第２の配線の配線層（１４ａ）からなる構成を有する。
PCT/JP2008/003325 2007-11-15 2008-11-14 不揮発性記憶装置およびその製造方法 Ceased WO2009063645A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/742,841 US8242479B2 (en) 2007-11-15 2008-11-14 Nonvolatile memory apparatus and manufacturing method thereof
JP2009541050A JP4427630B2 (ja) 2007-11-15 2008-11-14 不揮発性記憶装置およびその製造方法
CN2008801160547A CN101861649B (zh) 2007-11-15 2008-11-14 非易失性存储装置及其制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007296510 2007-11-15
JP2007-296510 2007-11-15

Publications (1)

Publication Number Publication Date
WO2009063645A1 true WO2009063645A1 (ja) 2009-05-22

Family

ID=40638499

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/003325 Ceased WO2009063645A1 (ja) 2007-11-15 2008-11-14 不揮発性記憶装置およびその製造方法

Country Status (4)

Country Link
US (1) US8242479B2 (ja)
JP (1) JP4427630B2 (ja)
CN (1) CN101861649B (ja)
WO (1) WO2009063645A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011066365A (ja) * 2009-09-18 2011-03-31 Toshiba Corp 半導体記憶装置およびその製造方法
WO2013001742A1 (ja) * 2011-06-27 2013-01-03 パナソニック株式会社 不揮発性半導体記憶素子、不揮発性半導体記憶装置およびその製造方法
US8592798B2 (en) 2010-04-21 2013-11-26 Panasonic Corporation Non-volatile storage device and method for manufacturing the same
TWI497707B (zh) * 2012-08-01 2015-08-21 Macronix Int Co Ltd 記憶裝置的三維陣列結構

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101616972B1 (ko) * 2009-09-15 2016-04-29 삼성전자주식회사 저항 소자를 갖는 반도체 장치 및 그 형성 방법
US8581225B2 (en) 2010-04-28 2013-11-12 Panasonic Corporation Variable resistance nonvolatile memory device and method of manufacturing the same
JP5555136B2 (ja) * 2010-11-02 2014-07-23 株式会社東芝 記憶装置及びその製造方法
WO2013094169A1 (ja) * 2011-12-19 2013-06-27 パナソニック株式会社 不揮発性記憶装置及びその製造方法
CN114678338B (zh) * 2020-12-24 2025-11-14 圣邦微电子（北京）股份有限公司 集成电路组件及其封装组件

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263647A (ja) * 1994-02-04 1995-10-13 Canon Inc 電子回路装置
JP2005518665A (ja) * 2002-02-20 2005-06-23 マイクロン テクノロジー インコーポレイテッド 抵抗変化メモリ用のセレン化銀／カルコゲナイドガラス
JP2006019686A (ja) * 2004-06-30 2006-01-19 Hynix Semiconductor Inc 相変化記憶素子及びその製造方法
JP2006203098A (ja) * 2005-01-24 2006-08-03 Sharp Corp 不揮発性半導体記憶装置
WO2007102483A1 (ja) * 2006-03-08 2007-09-13 Matsushita Electric Industrial Co., Ltd. 不揮発性記憶素子、不揮発記憶装置、及びそれらの製造方法
WO2007116749A1 (ja) * 2006-03-30 2007-10-18 Matsushita Electric Industrial Co., Ltd. 不揮発性記憶素子及びその製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0348820A (ja) 1989-07-18 1991-03-01 Citizen Watch Co Ltd 薄膜ダイオードの製造方法
JP3048820B2 (ja) 1994-02-15 2000-06-05 三洋電機株式会社 不凝縮ガス排出装置
JPH0774372A (ja) 1994-03-10 1995-03-17 Citizen Watch Co Ltd 薄膜ダイオードおよびその製造方法
US7087919B2 (en) 2002-02-20 2006-08-08 Micron Technology, Inc. Layered resistance variable memory device and method of fabrication
US6967350B2 (en) 2002-04-02 2005-11-22 Hewlett-Packard Development Company, L.P. Memory structures
US6821848B2 (en) 2002-04-02 2004-11-23 Hewlett-Packard Development Company, L.P. Tunnel-junction structures and methods
US6753561B1 (en) 2002-08-02 2004-06-22 Unity Semiconductor Corporation Cross point memory array using multiple thin films
EP1609154B1 (en) 2003-03-18 2013-12-25 Kabushiki Kaisha Toshiba Phase change memory device
US7307268B2 (en) * 2005-01-19 2007-12-11 Sandisk Corporation Structure and method for biasing phase change memory array for reliable writing
JP4017650B2 (ja) 2005-12-02 2007-12-05 シャープ株式会社 可変抵抗素子及びその製造方法
JP4939324B2 (ja) 2005-12-02 2012-05-23 シャープ株式会社 可変抵抗素子及びその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263647A (ja) * 1994-02-04 1995-10-13 Canon Inc 電子回路装置
JP2005518665A (ja) * 2002-02-20 2005-06-23 マイクロン テクノロジー インコーポレイテッド 抵抗変化メモリ用のセレン化銀／カルコゲナイドガラス
JP2006019686A (ja) * 2004-06-30 2006-01-19 Hynix Semiconductor Inc 相変化記憶素子及びその製造方法
JP2006203098A (ja) * 2005-01-24 2006-08-03 Sharp Corp 不揮発性半導体記憶装置
WO2007102483A1 (ja) * 2006-03-08 2007-09-13 Matsushita Electric Industrial Co., Ltd. 不揮発性記憶素子、不揮発記憶装置、及びそれらの製造方法
WO2007116749A1 (ja) * 2006-03-30 2007-10-18 Matsushita Electric Industrial Co., Ltd. 不揮発性記憶素子及びその製造方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011066365A (ja) * 2009-09-18 2011-03-31 Toshiba Corp 半導体記憶装置およびその製造方法
US8389970B2 (en) 2009-09-18 2013-03-05 Kabushiki Kaisha Toshiba Diode and storage layer semiconductor memory device
US8835241B2 (en) 2009-09-18 2014-09-16 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor memory device
US8592798B2 (en) 2010-04-21 2013-11-26 Panasonic Corporation Non-volatile storage device and method for manufacturing the same
WO2013001742A1 (ja) * 2011-06-27 2013-01-03 パナソニック株式会社 不揮発性半導体記憶素子、不揮発性半導体記憶装置およびその製造方法
JP5291269B2 (ja) * 2011-06-27 2013-09-18 パナソニック株式会社 不揮発性半導体記憶素子、不揮発性半導体記憶装置およびその製造方法
US20130270510A1 (en) * 2011-06-27 2013-10-17 Satoru Fujii Nonvolatile semiconductor memory element, nonvolatile semiconductor memory device, and method for manufacturing nonvolatile semiconductor memory device
US9252189B2 (en) 2011-06-27 2016-02-02 Panasonic Intellectual Property Management Co., Ltd. Nonvolatile semiconductor memory element, nonvolatile semiconductor memory device, and method for manufacturing nonvolatile semiconductor memory device
TWI497707B (zh) * 2012-08-01 2015-08-21 Macronix Int Co Ltd 記憶裝置的三維陣列結構

Also Published As

Publication number Publication date
JPWO2009063645A1 (ja) 2011-03-31
JP4427630B2 (ja) 2010-03-10
US20100264392A1 (en) 2010-10-21
CN101861649A (zh) 2010-10-13
US8242479B2 (en) 2012-08-14
CN101861649B (zh) 2012-10-31

Similar Documents

Publication Publication Date Title
WO2009063645A1 (ja) 不揮発性記憶装置およびその製造方法
WO2009075073A1 (ja) 不揮発性記憶装置およびその製造方法
WO2009069252A1 (ja) 不揮発性記憶装置およびその製造方法
WO2009050833A1 (ja) 不揮発性記憶素子、並びにその不揮発性記憶素子を用いた不揮発性半導体装置
WO2008149484A1 (ja) 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置
JP2006203187A5 (ja)
DE602007009162D1 (de) Array-Substrat mit Kupferleitern und Herstellungsverfahren dafür
TW200705616A (en) Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the same
WO2008146461A1 (ja) 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置
WO2009021741A8 (de) Organische elektronische bauelemente
TW200735428A (en) Electronic element, current control device, arithmetic device, and display device
JP2010135777A5 (ja) 半導体装置
TW200703620A (en) Electric element, memory device, and semiconductor integrated circuit
WO2007126690A3 (en) Phase change memory elements using self- aligned phase change material layers and methods of making and using same
WO2010065301A3 (en) Method of enabling selective area plating on a substrate
WO2008142919A1 (ja) 可変抵抗素子とその製造方法及び不揮発性半導体記憶装置
TW200616046A (en) Layered resistance variable memory device and method of fabrication
TW200705017A (en) Wire structure, method for fabricating wire, thin film transistor substrate, and method for fabricating the thin film transistor substrate
TW200735331A (en) Electrically rewritable non-volatile memory element and method of manufacturing the same
WO2007004115A3 (en) Organic electronic device and method for manufacture thereof
WO2012012569A3 (en) Multi-sensor integrated circuit device
TW200614498A (en) An electrically programmable polysilicon fuse with multiple level resistance and programming
JP2007080978A5 (ja)
TW200802747A (en) The structure of embedded chip packaging and the fabricating method thereof
WO2007087299A3 (en) Simultaneous formation of source/drain contacts and conductive layers on eeprom control gates

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880116054.7

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08849424

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2009541050

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 12742841

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08849424

Country of ref document: EP

Kind code of ref document: A1