[go: up one dir, main page]

WO2009060731A1 - Method for manufacturing organic thin film transistor, and organic thin film transistor - Google Patents

Method for manufacturing organic thin film transistor, and organic thin film transistor Download PDF

Info

Publication number
WO2009060731A1
WO2009060731A1 PCT/JP2008/069332 JP2008069332W WO2009060731A1 WO 2009060731 A1 WO2009060731 A1 WO 2009060731A1 JP 2008069332 W JP2008069332 W JP 2008069332W WO 2009060731 A1 WO2009060731 A1 WO 2009060731A1
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
film transistor
organic thin
manufacturing
organic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/069332
Other languages
French (fr)
Japanese (ja)
Inventor
Takayoshi Kambara
Hirofumi Kondo
Hiroaki Nakamura
Masatoshi Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Idemitsu Kosan Co Ltd
Original Assignee
Idemitsu Kosan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Idemitsu Kosan Co Ltd filed Critical Idemitsu Kosan Co Ltd
Publication of WO2009060731A1 publication Critical patent/WO2009060731A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

Disclosed is a method for manufacturing such an organic thin film transistor wherein at least three terminals, namely a gate electrode, a source electrode and a drain electrode, an insulating layer and an organic semiconductor layer are formed on a substrate and the source-drain current is controlled by applying a voltage to the gate electrode. This method for manufacturing an organic thin film transistor is characterized in that an insulating layer-forming step includes vapor phase film deposition of a fluorine polymer. Also disclosed is an organic thin film transistor manufactured by such a method. This organic thin film transistor (organic TFT) is high in mobility and on/off ratio.
PCT/JP2008/069332 2007-11-06 2008-10-24 Method for manufacturing organic thin film transistor, and organic thin film transistor Ceased WO2009060731A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-289017 2007-11-06
JP2007289017A JP2009117619A (en) 2007-11-06 2007-11-06 Organic thin film transistor manufacturing method and organic thin film transistor

Publications (1)

Publication Number Publication Date
WO2009060731A1 true WO2009060731A1 (en) 2009-05-14

Family

ID=40625629

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/069332 Ceased WO2009060731A1 (en) 2007-11-06 2008-10-24 Method for manufacturing organic thin film transistor, and organic thin film transistor

Country Status (3)

Country Link
JP (1) JP2009117619A (en)
TW (1) TW200931699A (en)
WO (1) WO2009060731A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112652718A (en) * 2020-12-11 2021-04-13 华南理工大学 Method for improving mobility of all-organic thin film transistor device

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2516688B2 (en) * 1989-08-02 1996-07-24 シャープ株式会社 Liquid crystal display
KR102066532B1 (en) * 2009-11-06 2020-01-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101818265B1 (en) * 2009-11-06 2018-01-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101773641B1 (en) * 2010-01-22 2017-09-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9368737B2 (en) * 2010-10-07 2016-06-14 Georgia Tech Research Corporation Multi-layer gate dielectric field-effect transistor and manufacturing process thereof
TWI476931B (en) * 2010-10-21 2015-03-11 Au Optronics Corp Thin film transistor and pixel structure having the same
KR101813179B1 (en) * 2011-06-10 2017-12-29 삼성전자주식회사 Graphene electronic device having a multi-layered gate insulating layer
JP5598928B2 (en) * 2011-11-18 2014-10-01 独立行政法人科学技術振興機構 THIN FILM TRANSISTOR AND METHOD FOR PRODUCING THIN FILM TRANSISTOR
KR101577989B1 (en) * 2014-10-17 2015-12-17 재단법인 나노기반소프트일렉트로닉스연구단 Laminated structure comprising small-molecular material and method for preparing the same

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH011971A (en) * 1987-06-24 1989-01-06 日本電気株式会社 Battery capacity alarm device
JPH09232589A (en) * 1996-01-29 1997-09-05 Motorola Inc Organic thin film transistor
JP2000150904A (en) * 1998-08-21 2000-05-30 Semiconductor Energy Lab Co Ltd Semiconductor device including semiconductor circuit including semiconductor element and method for manufacturing the same
WO2004075279A1 (en) * 2003-02-18 2004-09-02 Konica Minolta Holdings, Inc. Organic thin-film transistor device and method for manufacturing same
JP2005165304A (en) * 2003-11-14 2005-06-23 Semiconductor Energy Lab Co Ltd Liquid crystal display device and method for manufacturing liquid crystal display device
JP2006013468A (en) * 2004-06-24 2006-01-12 Samsung Sdi Co Ltd Organic thin film transistor and manufacturing method thereof
JP2007242665A (en) * 2006-03-06 2007-09-20 Optrex Corp Organic thin film devices containing fluorine-containing aromatic compounds
JP2008186885A (en) * 2007-01-29 2008-08-14 Sony Corp Thin film semiconductor device manufacturing method and thin film semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2518291B2 (en) * 1987-06-24 1996-07-24 日本電気株式会社 Battery capacity alarm device
JP3992203B2 (en) * 1997-06-13 2007-10-17 住友化学株式会社 Oriented molecular thin film

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH011971A (en) * 1987-06-24 1989-01-06 日本電気株式会社 Battery capacity alarm device
JPH09232589A (en) * 1996-01-29 1997-09-05 Motorola Inc Organic thin film transistor
JP2000150904A (en) * 1998-08-21 2000-05-30 Semiconductor Energy Lab Co Ltd Semiconductor device including semiconductor circuit including semiconductor element and method for manufacturing the same
WO2004075279A1 (en) * 2003-02-18 2004-09-02 Konica Minolta Holdings, Inc. Organic thin-film transistor device and method for manufacturing same
JP2005165304A (en) * 2003-11-14 2005-06-23 Semiconductor Energy Lab Co Ltd Liquid crystal display device and method for manufacturing liquid crystal display device
JP2006013468A (en) * 2004-06-24 2006-01-12 Samsung Sdi Co Ltd Organic thin film transistor and manufacturing method thereof
JP2007242665A (en) * 2006-03-06 2007-09-20 Optrex Corp Organic thin film devices containing fluorine-containing aromatic compounds
JP2008186885A (en) * 2007-01-29 2008-08-14 Sony Corp Thin film semiconductor device manufacturing method and thin film semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112652718A (en) * 2020-12-11 2021-04-13 华南理工大学 Method for improving mobility of all-organic thin film transistor device

Also Published As

Publication number Publication date
JP2009117619A (en) 2009-05-28
TW200931699A (en) 2009-07-16

Similar Documents

Publication Publication Date Title
WO2009060731A1 (en) Method for manufacturing organic thin film transistor, and organic thin film transistor
WO2009041254A1 (en) Organic thin film transistor
TWI397184B (en) Oxide semiconductor thin film transistor
WO2009028660A1 (en) Organic thin film transistor and organic thin film light-emitting transistor
US9391207B2 (en) Thin film transistor, array substrate and manufacturing method thereof, and display device
WO2009041713A3 (en) Method for manufacturing an oxide semiconductor field-effect transistor
US10559639B2 (en) Organic light-emitting display device and method for manufacturing the same
WO2008132862A1 (en) Semiconductor device, and its manufacturing method
CN106783921A (en) Organic electroluminescence display panel and preparation method thereof
TW200419810A (en) Structure of thin-film transistor, and the manufacturing method thereof
WO2009044614A1 (en) Organic semiconductor device
TW200735375A (en) Organic thin film transistor and organic thin film luminescence transistor
WO2008126490A1 (en) Semiconductor device and method for manufacturing the same
WO2008117362A1 (en) Organic transistor and process for producing the same
CN104037090B (en) Oxide thin film transistor structure manufacturing method and oxide thin film transistor structure
WO2009028460A1 (en) Benzodithiophene derivative, and organic thin film transistor and organic thin film light-emitting transistor each using the derivative
GB2467259A (en) Organic thin film transistors, active matrix organic optical devices and methods of making the same
TW200727492A (en) Organic thin film transistor array panel
US20170133475A1 (en) Low temperature poly-silicon thin film transistor and manufacturing method thereof
Cho et al. Passivation of bottom-gate IGZO thin film transistors
Ko et al. Engineering a subnanometer interface tailoring layer for precise hydrogen incorporation and defect passivation for high-end oxide thin-film transistors
TW200729508A (en) Thin-film transistor panel and method for manufacturing the same
TW200735366A (en) Double gate thin-film transistor and method for forming the same
TW200802883A (en) Tunneling-effect thin film transistor, method of manufacturing the same, and organic light-emitting diode display using the same
GB2507214A (en) Method of forming a top gate transistor

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08846981

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08846981

Country of ref document: EP

Kind code of ref document: A1