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WO2009052814A2 - Dispositif de refroidissement pour composants à semi-conducteur, ensemble de refroidissement à semi-conducteur et leur procédé de fabrication - Google Patents

Dispositif de refroidissement pour composants à semi-conducteur, ensemble de refroidissement à semi-conducteur et leur procédé de fabrication Download PDF

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Publication number
WO2009052814A2
WO2009052814A2 PCT/DE2008/001770 DE2008001770W WO2009052814A2 WO 2009052814 A2 WO2009052814 A2 WO 2009052814A2 DE 2008001770 W DE2008001770 W DE 2008001770W WO 2009052814 A2 WO2009052814 A2 WO 2009052814A2
Authority
WO
WIPO (PCT)
Prior art keywords
cooling
cooling device
mounting surface
semiconductor
connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2008/001770
Other languages
German (de)
English (en)
Other versions
WO2009052814A3 (fr
Inventor
Dirk Lorenzen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of WO2009052814A2 publication Critical patent/WO2009052814A2/fr
Publication of WO2009052814A3 publication Critical patent/WO2009052814A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar

Definitions

  • Semiconductor device cooling device semiconductor cooling device, semiconductor cooling device, and method of manufacturing the same
  • the invention relates to a cooling device for semiconductor devices, cooling device for at least one heat generating semiconductor device in its operation with at least one, at least one mounting surface for material attachment of at least one semiconductor device having, simultaneouslyleit Scheme and at least one cooling channel structure, at least partially facing away from the mounting surface side the nickelleit Schemees is arranged and with at least one coolant inlet and at least one coolant outlet fluidly connected, wherein the cooling channel structure at least partially cohesively bonded to the heat conduction region and wegriad from the sauit Scheme cooling fins.
  • microchannel heat sinks which are usually made of copper for cost reasons and because of the required high thermal conductivity, are not resistant to corrosion for a variety of reasons, especially since copper is susceptible to corrosion, for example, compared to oxygen-containing water as coolant pH of the water deviates from 9.
  • JP 2003 273 441 A therefore, it is proposed to provide the inner wall surface of the cooling channel with a protective layer consisting of two partial layers, which forms a coolant contact of the Interior wall surface prevented.
  • a first layer which contains gold, silver or alloys of these precious metals as main components, is in contact with the cooling liquid as the actual protective layer and a second layer, which is composed of the main components Ni, Mo, W or Ti, lies as a diffusion barrier between the first Layer and the inner wall surface.
  • a disadvantage of this solution is that the sensitive noble metal layer forms a local element in case of injury with the underlying second layer and this can then be resolved by pitting.
  • At least one core region of the cooling ribs consists predominantly of tantalum and / or niobium in terms of atomic, weight and / or volume fractions.
  • the cooling fins themselves are corrosion resistant.
  • the thermal conductivity of these metals compared to copper is only one-seventh (copper 400 W / m / K, tantalum of 57 W / m / K), but it has been shown that the thermal resistance of two cooling fin structures of different materials whose thermal conductivity around a factor x have the same thermal resistance when the rib widths differ from each other by the factor of the square root of this factor x.
  • Equation 3 is the heat transfer coefficient at the cooling rib flanks.
  • ⁇ s is the thermal conductivity of the cooling fluid, that is, the hydraulic diameter of the cooling channels associated with the fin structure, and Nu the Nusselt number of the flow of the cooling fluid.
  • the heat transfer area, which is larger than a flat area A, of a cooling rib which protrudes from this flat area can be described by an effective heat transfer coefficient aeff of this area, so that equation 1 can also be described as
  • Equation 3 Equation 3
  • This function is plotted in FIG. 4 for the cooling medium water as a function of the thermal conductivity of the ribs As with different channel / rib widths b as parameters.
  • the thermal resistance of cooling fins of copper (Cu) having a width of about 0.3 mm can be reproduced by tantalum (Ta) cooling fins having a width of 0.1 mm (lower double arrow in FIG. 4).
  • the thermal resistance of cooling fins of copper (Cu) having a width of about 0.15 mm can be reproduced by tantalum (Ta) cooling fins having a width of 0.05 mm (upper double-headed arrow in Fig. 4) for cooling fins from the slightly cheaper niobium (Nb).
  • cooling fins are not limited to a specific geometry, as suggested, for example, by the cited publications.
  • the cooling fins can be formed as threads, domes and rods with any, along the extension direction constant or variable, cross-sectional profile.
  • cross-sectional profiles are rectangles, circles, squares, crosses, triangles, rhombuses, trapezoids, spherical or cylindrical shell sections, and so forth.
  • a cooling rib for example a cooling web, or the juxtaposition of a plurality of cooling rib sections parallel to a connection surface to the sauceleit Scheme set: straight as well as zigzag, serpentine, U or sinusoidal and other gradients are suitable, one or more in the extension direction to limit, enclose or form superimposed cooling channels or cooling channel sections between the cooling fins or their sections.
  • the cooling fin ends can lie freely in the space provided for the flow of the cooling medium (free end) or open into a solid region of the cooling device opposite the heat-conducting region or abut against it, wherein they are connected to this solid-state region thermally (preferably firmly bonded) (bound end).
  • the cooling fins have a high aspect ratio and the area between the mounting surface and the cooling channel structure has sufficient heat spread. This can be achieved in that the total height of the cooling fins between the fin base and fins fin is at least three times as large as the fulcrum width and less than the thickness of the heat sink area between the mounting surface and the cooling channel structure.
  • the cooling rib width should be less than 200 microns.
  • the cooling fin height is in the range of 100 microns to 600 microns.
  • tantalum and niobium have thermal expansion coefficients which approximately correspond to those of semiconductor components, in particular those of GaAs (tantalum: 6.3 ppm / K, niobium: 7.3 ppm / K), which is thermomechanically favorable on temperature-dependent bonding methods, such as soldering or welding the cooling fin structure with a heat-spreading carrier for the semiconductor device having a coefficient of thermal expansion similar to that of the semiconductor device.
  • the invention thus fulfills the thermally conductive and connection-technical aspects of a quality-compliant design of microchannel heat sinks.
  • a semiconductor cooling device for example a diode laser component in the case in which the heat generating during operation
  • Semiconductor device is a laser diode element.
  • Cooling rib geometry achieve better heat dissipation in the cooling channel structure than the solution according to the invention.
  • the distance from the heat source to the cooling channel structure caused by the inventive heat conduction region is preferably greater in the cooling arrangement according to the invention than in cooling arrangements according to the prior art, which are provided with cooling ribs of higher thermal conductivity.
  • a heat-conducting region or body is present between the cooling ribs and the semiconductor component, which preferably has a higher thermal conductivity than the core regions of the cooling ribs or the cooling ribs themselves. Preferably, it extends beyond the mounting surface in at least one direction parallel to the mounting surface and has one
  • Thickness which is preferably at least three times as large as the height of the cooling fins, in order to spread or distribute the heat generated by the semiconductor device over a large cooling fin area.
  • a heat-spreading region or body consists of a highly thermally conductive composite whose thermal expansion coefficient - as well as that of tantalum and niobium - approximately that of the semiconductor device - for example, a laser diode element based on GaAs - corresponds.
  • Expansion coefficients makes it possible to produce both the joint connection between heat spreader and semiconductor device and the joint connection with the microchannel heat sink or the cooling fin structure alone with a reliable high gold-containing gold-tin solder when using a heat spreader.
  • the mounting surface of the heat-conducting region, a cooling fin body having the cooling fins on an adhesive bonding surface facing the heat-conducting region and / or the cooling fins including their base and their ends on the surfaces carry an electrically insulating layer.
  • the electrical insulation of the cooling fins reference is made to the German patent application 10 2007 051 797.3, the disclosure of which is hereby incorporated by reference.
  • cooling fins or a cooling fin body of tantalum and / or niobium with a tantalum oxide and / or niobium oxide layer, for example by oxidation of the tantalum and / or the niobium of the cooling fin body or of the cooling fins.
  • FIG. 1 shows a section through a first embodiment of a cooling device according to the invention
  • FIG. 2 shows a cooling rib structure
  • Fig. 3 is a section through a second embodiment of a cooling device according to the invention.
  • Equation (8) is a graphical representation of equation (8), which has already been explained.
  • a heat spreader 1 made of a silver-diamond composite material has a mounting surface 2 for a semiconductor component 3 to be cooled and a connection surface 4 opposite the mounting surface 2 for a cooling rib structure 5 a.
  • the cooling rib structure 5a is produced by introducing 50 ⁇ m wide microgrooves into a 0.3 mm thick tantalum sheet by laser cutting or reactive ion etching, wherein an unstructured edge region 6 surrounding the microgrooves remains in the tantalum sheet.
  • the microgrooves extend over the entire thickness of the tantalum sheet, so that elongated holes are formed in the tantalum sheet with cooling fins 7 .mu.m high in height.
  • the microgrooves end 50 microns before they open the opposite side of the tantalum, so that 250 micron high cooling fins 7 arise.
  • the cooling rib structure 5b has a cooling rib base plane B, oriented parallel to the sheet surface, on which the heat is introduced and a plane E opposite the cooling rib base plane B, in which the cooling ribs 7 end and which coincides with sections of the sheet metal surface (FIG. 2).
  • the cooling rib structure 5b is fastened to the joining surface 4 of the heat spreader 1, preferably with a solder 8, by means of the joining surface 13 contained in the base-side sheet metal surface.
  • an electrically insulating layer 9 is applied to the base-side sheet metal surface of the cooling fin structure 5b according to the second embodiment, which is subsequently metallized in a solderable manner, wherein the solderable metallization has the joining surface 13.
  • connection component 10 is placed on the cooling rib structure 5a / 5b fastened to the heat spreader 1 so that the cooling rib structure 5a / 5b is closed and a cooling channel structure is formed within a microchannel heat sink.
  • a cohesive connection is produced between the connection component 10 and the cooling rib structure 5a / 5b, wherein the joining zone 11 is located in the region of the unstructured edge region 6 of the tantalum sheet.
  • the connection component 10 is preferably a plate made of LTC (low-temperature cofired) ceramic with at least one inlet channel 12 for supplying a coolant to the cooling channel structure and at least one flow channel, not shown, for discharging the coolant from the cooling channel structure.
  • the outlet channel opens into a coolant outlet (both not shown).
  • the semiconductor device 3 for example, a laser diode bar - attached to the mounting surface 2 of the microchannel heat sink by means of a solder cohesively.
  • the cooling rib structure 5b from FIG. 2 is first connected to the connection component 10 on the cooling rib side, as a result of which a microchannel heat sink according to the invention having a joining surface 13 is produced.
  • a laser diode bar formed semiconductor device 3 is connected by its contact surface 14 cohesively via a solder joint with the heat spreader 1.
  • the heat spreader 1 is connected by its side opposite the laser diode bar attachment surface 4 cohesively via a solder joint with the joint surface 13 of the microchannel heat sink.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

L'invention concerne un dispositif de refroidissement pour composants à semi-conducteur. Le but de l'invention est d'augmenter l'efficacité de la protection anticorrosion et d'allonger la durée de vie du dispositif de refroidissement en réduisant la sensibilité à la corrosion des canaux de refroidissement, tout en tenant compte des aspects relatifs à la fiabilité du composant à semi-conducteur. A cet effet, une structure de canaux de refroidissement, séparée de la surface de montage destinée au composant à semi-conducteur par une zone de conduction de la chaleur, présente des ailettes de refroidissement reliées par liaison de matière à la zone de conduction de la chaleur, au moins une zone centrale desdites ailettes étant principalement constituée de tantale et/ou de niobium.
PCT/DE2008/001770 2007-10-26 2008-10-26 Dispositif de refroidissement pour composants à semi-conducteur, ensemble de refroidissement à semi-conducteur et leur procédé de fabrication Ceased WO2009052814A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007051796.5 2007-10-26
DE102007051796A DE102007051796A1 (de) 2007-10-26 2007-10-26 Kühlvorrichtung für Halbleiterbauelemente

Publications (2)

Publication Number Publication Date
WO2009052814A2 true WO2009052814A2 (fr) 2009-04-30
WO2009052814A3 WO2009052814A3 (fr) 2009-09-24

Family

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Country Status (2)

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DE (1) DE102007051796A1 (fr)
WO (1) WO2009052814A2 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011009680A3 (fr) * 2009-07-21 2011-03-31 Osram Gesellschaft mit beschränkter Haftung Module optoélectronique et procédé de fabrication d'un tel module
US20130157100A1 (en) * 2011-12-15 2013-06-20 GM Global Technology Operations LLC Carbon fiber thermal interface for cooling module assembly
CN103887703A (zh) * 2014-03-27 2014-06-25 北京牡丹电子集团有限责任公司 一种带石墨烯层的半导体激光器热沉及其制作方法
CN112382921A (zh) * 2020-10-22 2021-02-19 山东大学 一种可改善半导体激光芯片热传导效率的热沉及制备方法
CN116014540A (zh) * 2023-01-05 2023-04-25 中国电子科技集团公司第十一研究所 一种激光晶体冷却热沉及其复合过渡层的制备方法

Families Citing this family (2)

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Publication number Priority date Publication date Assignee Title
DE102015013511B3 (de) 2015-10-15 2017-03-16 Jenoptik Laser Gmbh Laserstrahlungsquelle und Verfahren zur Herstellung einer Laserstrahlungsquelle und Verwendung eines Lötprozesses
DE102016218522B3 (de) 2016-09-27 2017-06-22 Jenoptik Laser Gmbh Optische oder optoelektronische Baugruppe und Verfahren zur Herstellung dafür

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DE10011568C1 (de) * 2000-03-09 2001-06-13 Gea Canzler Gmbh Wärmetauscherelement
CN1392219A (zh) * 2001-06-15 2003-01-22 独立行政法人产业技术综合研究所 高热导性复合材料及其制备方法
US6452798B1 (en) * 2001-09-12 2002-09-17 Harris Corporation Electronic module including a cooling substrate having a fluid cooling circuit therein and related methods
JP2003273441A (ja) 2002-03-15 2003-09-26 Hamamatsu Photonics Kk ヒートシンク並びにこれを用いた半導体レーザ装置及び半導体レーザスタック装置
US6988534B2 (en) * 2002-11-01 2006-01-24 Cooligy, Inc. Method and apparatus for flexible fluid delivery for cooling desired hot spots in a heat producing device
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US7044196B2 (en) * 2003-01-31 2006-05-16 Cooligy,Inc Decoupled spring-loaded mounting apparatus and method of manufacturing thereof
JP4419742B2 (ja) * 2004-07-28 2010-02-24 ブラザー工業株式会社 電子部品搭載基板及びインクジェットヘッド
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011009680A3 (fr) * 2009-07-21 2011-03-31 Osram Gesellschaft mit beschränkter Haftung Module optoélectronique et procédé de fabrication d'un tel module
US20130157100A1 (en) * 2011-12-15 2013-06-20 GM Global Technology Operations LLC Carbon fiber thermal interface for cooling module assembly
US8945749B2 (en) * 2011-12-15 2015-02-03 GM Global Technology Operations LLC Carbon fiber thermal interface for cooling module assembly
CN103887703A (zh) * 2014-03-27 2014-06-25 北京牡丹电子集团有限责任公司 一种带石墨烯层的半导体激光器热沉及其制作方法
CN112382921A (zh) * 2020-10-22 2021-02-19 山东大学 一种可改善半导体激光芯片热传导效率的热沉及制备方法
CN116014540A (zh) * 2023-01-05 2023-04-25 中国电子科技集团公司第十一研究所 一种激光晶体冷却热沉及其复合过渡层的制备方法

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Publication number Publication date
WO2009052814A3 (fr) 2009-09-24
DE102007051796A1 (de) 2009-05-07

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