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WO2009052356A3 - Conductive compositions and processes for use in the manufacture of semiconductor devices - Google Patents

Conductive compositions and processes for use in the manufacture of semiconductor devices Download PDF

Info

Publication number
WO2009052356A3
WO2009052356A3 PCT/US2008/080277 US2008080277W WO2009052356A3 WO 2009052356 A3 WO2009052356 A3 WO 2009052356A3 US 2008080277 W US2008080277 W US 2008080277W WO 2009052356 A3 WO2009052356 A3 WO 2009052356A3
Authority
WO
WIPO (PCT)
Prior art keywords
manufacture
processes
semiconductor devices
conductive compositions
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2008/080277
Other languages
French (fr)
Other versions
WO2009052356A2 (en
Inventor
Alan Frederick Carroll
Kenneth Warren Hang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/176,697 external-priority patent/US7935277B2/en
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of WO2009052356A2 publication Critical patent/WO2009052356A2/en
Publication of WO2009052356A3 publication Critical patent/WO2009052356A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/06—Frit compositions, i.e. in a powdered or comminuted form containing halogen
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Dispersion Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Conductive Materials (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Embodiments of the invention relate to a silicon semiconductor device, and a conductive silver paste for use in the front side of a solar cell device.
PCT/US2008/080277 2007-10-18 2008-10-17 Conductive compositions and processes for use in the manufacture of semiconductor devices Ceased WO2009052356A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US98092907P 2007-10-18 2007-10-18
US60/980,929 2007-10-18
US12/176,697 2008-07-21
US12/176,697 US7935277B2 (en) 2005-04-14 2008-07-21 Conductive compositions and processes for use in the manufacture of semiconductor devices

Publications (2)

Publication Number Publication Date
WO2009052356A2 WO2009052356A2 (en) 2009-04-23
WO2009052356A3 true WO2009052356A3 (en) 2009-07-02

Family

ID=40303603

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/080277 Ceased WO2009052356A2 (en) 2007-10-18 2008-10-17 Conductive compositions and processes for use in the manufacture of semiconductor devices

Country Status (1)

Country Link
WO (1) WO2009052356A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI498308B (en) 2010-05-04 2015-09-01 杜邦股份有限公司 Thick film paste containing lead-bismuth-lithium-titanium-oxide and its use in the manufacture of semiconductor devices
US8691119B2 (en) * 2011-08-11 2014-04-08 E I Du Pont De Nemours And Company Thick film paste containing lead-tellurium-lithium-titanium-oxide and its use in the manufacture of semiconductor devices
US8696948B2 (en) 2011-08-11 2014-04-15 E I Du Pont De Nemours And Company Thick film paste containing lead—tellurium—lithium—titanium—oxide and its use in the manufacture of semiconductor devices
CN103871541B (en) * 2012-05-03 2017-04-12 苏州晶银新材料股份有限公司 Electrocondution slurry for back electrode of solar battery
TWI745562B (en) 2017-04-18 2021-11-11 美商太陽帕斯特有限責任公司 Conductive paste composition and semiconductor devices made therewith
CN120736799B (en) * 2025-08-21 2025-12-05 西安天工电气有限公司 Glass powder for electrostatic spraying of resistor sheets, its preparation method and its application

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1321441A1 (en) * 2001-12-21 2003-06-25 Shoei Chemical Inc. Glass and conductive paste using the same
EP1713091A2 (en) * 2005-04-14 2006-10-18 E.I.Du pont de nemours and company Method of manufacture of semiconductor device and conductive compositions used therein
EP1713092A2 (en) * 2005-04-14 2006-10-18 E.I.Du pont de nemours and company Conductive compositions and processes for their use in the manufacture of semiconductor devices
EP1713095A2 (en) * 2005-04-14 2006-10-18 E.I. Dupont De Nemours And Company Method of manufacture of semiconductor device and conductive compositions used therein

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1321441A1 (en) * 2001-12-21 2003-06-25 Shoei Chemical Inc. Glass and conductive paste using the same
EP1713091A2 (en) * 2005-04-14 2006-10-18 E.I.Du pont de nemours and company Method of manufacture of semiconductor device and conductive compositions used therein
EP1713092A2 (en) * 2005-04-14 2006-10-18 E.I.Du pont de nemours and company Conductive compositions and processes for their use in the manufacture of semiconductor devices
EP1713095A2 (en) * 2005-04-14 2006-10-18 E.I. Dupont De Nemours And Company Method of manufacture of semiconductor device and conductive compositions used therein

Also Published As

Publication number Publication date
WO2009052356A2 (en) 2009-04-23

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