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WO2009047981A1 - Procédé de fabrication de transistor en couches minces - Google Patents

Procédé de fabrication de transistor en couches minces Download PDF

Info

Publication number
WO2009047981A1
WO2009047981A1 PCT/JP2008/067257 JP2008067257W WO2009047981A1 WO 2009047981 A1 WO2009047981 A1 WO 2009047981A1 JP 2008067257 W JP2008067257 W JP 2008067257W WO 2009047981 A1 WO2009047981 A1 WO 2009047981A1
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
film transistor
manufacturing
manufacturing thin
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/067257
Other languages
English (en)
Japanese (ja)
Inventor
Katsura Hirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Konica Minolta Inc
Original Assignee
Konica Minolta Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Inc filed Critical Konica Minolta Inc
Priority to JP2009536965A priority Critical patent/JP5454143B2/ja
Publication of WO2009047981A1 publication Critical patent/WO2009047981A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)

Abstract

L'invention porte sur un procédé de fabrication d'un transistor à couches minces organique haute performance, dans lequel un film isolant de grille est formé par traitement au plasma d'une couche de revêtement à forte adhérence et un motif de film mince semi-conducteur organique est formé avec une précision élevée par maîtrise de l'énergie de surface avec un matériau de traitement de surface. Ce procédé pour fabriquer un transistor à couches minces organique est caractérisé par l'utilisation, en tant que film isolant de grille, d'une couche comportant une couche contenant de l'oxyde de silicium dans la surface qui est formée par oxydation d'une couche contenant du silicium formée sur un substrat.
PCT/JP2008/067257 2007-10-09 2008-09-25 Procédé de fabrication de transistor en couches minces Ceased WO2009047981A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009536965A JP5454143B2 (ja) 2007-10-09 2008-09-25 薄膜トランジスタの製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-263045 2007-10-09
JP2007263045 2007-10-09

Publications (1)

Publication Number Publication Date
WO2009047981A1 true WO2009047981A1 (fr) 2009-04-16

Family

ID=40549126

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/067257 Ceased WO2009047981A1 (fr) 2007-10-09 2008-09-25 Procédé de fabrication de transistor en couches minces

Country Status (2)

Country Link
JP (1) JP5454143B2 (fr)
WO (1) WO2009047981A1 (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2462157A (en) * 2008-07-29 2010-02-03 Korea Electronics Telecomm Method of fabricating organic thin film transistor using surface energy control
JP2010263103A (ja) * 2009-05-08 2010-11-18 Konica Minolta Holdings Inc 薄膜トランジスタ、及びその製造方法
WO2012063474A1 (fr) * 2010-11-10 2012-05-18 パナソニック株式会社 Dispositif de traitement par plasma et procédé de traitement par plasma
JP2012129396A (ja) * 2010-12-16 2012-07-05 Ricoh Co Ltd 電界効果型トランジスタ及びその製造方法
WO2015102110A1 (fr) * 2014-01-06 2015-07-09 コニカミノルタ株式会社 Procédé de stratification de matériau fonctionnel, et corps stratifié de matériau fonctionnel
KR20190078913A (ko) * 2017-12-27 2019-07-05 (주)바이오필리아 산화물 박막 트랜지스터 제조 방법 및 이를 이용해서 제조되는 산화물 박막 트랜지스터

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09219525A (ja) * 1996-02-09 1997-08-19 Seiko Epson Corp 液晶表示装置およびその製造方法
JP2005191437A (ja) * 2003-12-26 2005-07-14 Ricoh Co Ltd 半導体装置、その製造方法、および表示装置
JP2006339265A (ja) * 2005-05-31 2006-12-14 Sony Corp 電界効果型トランジスタ
JP2007043055A (ja) * 2005-07-08 2007-02-15 Sekisui Chem Co Ltd 薄膜トランジスタ及びゲート絶縁膜

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007142021A (ja) * 2005-11-16 2007-06-07 Seiko Epson Corp 順スタガ構造薄膜トランジスタの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09219525A (ja) * 1996-02-09 1997-08-19 Seiko Epson Corp 液晶表示装置およびその製造方法
JP2005191437A (ja) * 2003-12-26 2005-07-14 Ricoh Co Ltd 半導体装置、その製造方法、および表示装置
JP2006339265A (ja) * 2005-05-31 2006-12-14 Sony Corp 電界効果型トランジスタ
JP2007043055A (ja) * 2005-07-08 2007-02-15 Sekisui Chem Co Ltd 薄膜トランジスタ及びゲート絶縁膜

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2462157A (en) * 2008-07-29 2010-02-03 Korea Electronics Telecomm Method of fabricating organic thin film transistor using surface energy control
GB2462157B (en) * 2008-07-29 2011-05-18 Korea Electronics Telecomm Method of fabricating organic thin film transistor using surface energy control
US8058115B2 (en) 2008-07-29 2011-11-15 Electronics And Telecommunications Research Institute Method of fabricating organic thin film transistor using surface energy control
JP2010263103A (ja) * 2009-05-08 2010-11-18 Konica Minolta Holdings Inc 薄膜トランジスタ、及びその製造方法
WO2012063474A1 (fr) * 2010-11-10 2012-05-18 パナソニック株式会社 Dispositif de traitement par plasma et procédé de traitement par plasma
JP5271456B2 (ja) * 2010-11-10 2013-08-21 パナソニック株式会社 プラズマ処理装置及びプラズマ処理方法
JP2012129396A (ja) * 2010-12-16 2012-07-05 Ricoh Co Ltd 電界効果型トランジスタ及びその製造方法
WO2015102110A1 (fr) * 2014-01-06 2015-07-09 コニカミノルタ株式会社 Procédé de stratification de matériau fonctionnel, et corps stratifié de matériau fonctionnel
JPWO2015102110A1 (ja) * 2014-01-06 2017-03-23 コニカミノルタ株式会社 機能材料の積層方法及び機能材料積層体
KR20190078913A (ko) * 2017-12-27 2019-07-05 (주)바이오필리아 산화물 박막 트랜지스터 제조 방법 및 이를 이용해서 제조되는 산화물 박막 트랜지스터
KR102045027B1 (ko) 2017-12-27 2019-11-21 (주)바이오필리아 산화물 박막 트랜지스터 제조 방법 및 이를 이용해서 제조되는 산화물 박막 트랜지스터

Also Published As

Publication number Publication date
JP5454143B2 (ja) 2014-03-26
JPWO2009047981A1 (ja) 2011-02-17

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