[go: up one dir, main page]

WO2009041684A1 - シリカガラスルツボとその製造方法および引き上げ方法 - Google Patents

シリカガラスルツボとその製造方法および引き上げ方法 Download PDF

Info

Publication number
WO2009041684A1
WO2009041684A1 PCT/JP2008/067651 JP2008067651W WO2009041684A1 WO 2009041684 A1 WO2009041684 A1 WO 2009041684A1 JP 2008067651 W JP2008067651 W JP 2008067651W WO 2009041684 A1 WO2009041684 A1 WO 2009041684A1
Authority
WO
WIPO (PCT)
Prior art keywords
silica glass
bubble
layer
face layer
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/067651
Other languages
English (en)
French (fr)
Inventor
Minoru Kanda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Super Quartz Corp
Original Assignee
Japan Super Quartz Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Super Quartz Corp filed Critical Japan Super Quartz Corp
Priority to EP08825826.4A priority Critical patent/EP2194166A4/en
Priority to US12/303,139 priority patent/US20100319608A1/en
Publication of WO2009041684A1 publication Critical patent/WO2009041684A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
    • C03B19/095—Other methods of shaping glass by fusing powdered glass in a shaping mould by centrifuging, e.g. arc discharge in rotating mould
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B20/00—Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Melting And Manufacturing (AREA)

Abstract

　外部輻射の熱を十分に分散でき、シリコン融液の温度ムラを防止すると共に、良好な熱伝導性を有し、シリコン融液を形成するための昇温時間が長くかからず、ルツボ全体の広い範囲で均熱状態を形成するために、外面層が気泡含有シリカガラス層によって形成されており、内面層が肉眼で気泡が観察されないシリカガラス層によって形成されているシリカガラスルツボにおいて、外面層と内面層の間に、直径１００μｍ以下の気泡を体積気泡含有率で０．１％以上含む気泡含有シリカガラス層（気泡含有層）と、体積気泡含有率０，０５％以下のシリカガラス層（透明ガラス層）が積層した中間層が介在されている。
PCT/JP2008/067651 2007-09-28 2008-09-29 シリカガラスルツボとその製造方法および引き上げ方法 Ceased WO2009041684A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP08825826.4A EP2194166A4 (en) 2007-09-28 2008-09-29 QUARTZ GLASS LEVER, PROCESS FOR ITS MANUFACTURE AND PRODUCTION PROCESS
US12/303,139 US20100319608A1 (en) 2007-09-28 2008-09-29 Silica glass crucible, method of manufacturing the same and pulling method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-256155 2007-09-28
JP2007256155A JP5143520B2 (ja) 2007-09-28 2007-09-28 シリカガラスルツボとその製造方法および引き上げ方法

Publications (1)

Publication Number Publication Date
WO2009041684A1 true WO2009041684A1 (ja) 2009-04-02

Family

ID=40511562

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/067651 Ceased WO2009041684A1 (ja) 2007-09-28 2008-09-29 シリカガラスルツボとその製造方法および引き上げ方法

Country Status (6)

Country Link
US (1) US20100319608A1 (ja)
EP (1) EP2194166A4 (ja)
JP (1) JP5143520B2 (ja)
KR (1) KR20100066252A (ja)
TW (1) TWI383962B (ja)
WO (1) WO2009041684A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011007491A1 (ja) * 2009-07-15 2011-01-20 信越石英株式会社 シリカ容器及びその製造方法
JP2011073911A (ja) * 2009-09-30 2011-04-14 Covalent Materials Corp シリコン単結晶引上げ用シリカガラスルツボ
US20120137963A1 (en) * 2010-12-01 2012-06-07 Japan Super Quartz Corporation Vitreous silica crucible
US20120160155A1 (en) * 2009-09-09 2012-06-28 Japan Super Quartz Corporation Composite crucible, method of manufacturing the same, and method of manufacturing silicon crystal
US9003832B2 (en) 2009-11-20 2015-04-14 Heraeus Shin-Etsu America, Inc. Method of making a silica crucible in a controlled atmosphere

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7496695B2 (en) 2005-09-29 2009-02-24 P.A. Semi, Inc. Unified DMA
US8272234B2 (en) 2008-12-19 2012-09-25 Heraeus Shin-Etsu America, Inc. Silica crucible with pure and bubble free inner crucible layer and method of making the same
CN102395535B (zh) * 2009-05-26 2014-07-02 信越石英株式会社 二氧化硅容器及其制造方法
JP5397857B2 (ja) * 2009-10-20 2014-01-22 株式会社Ｓｕｍｃｏ 石英ガラスルツボの製造方法および製造装置
JP5500684B2 (ja) * 2010-06-25 2014-05-21 株式会社Ｓｕｍｃｏ シリカガラスルツボ及びその製造方法、シリコンインゴットの製造方法
JP5605902B2 (ja) * 2010-12-01 2014-10-15 株式会社Ｓｕｍｃｏ シリカガラスルツボの製造方法、シリカガラスルツボ
JP5500688B2 (ja) * 2010-12-03 2014-05-21 株式会社Ｓｕｍｃｏ シリカガラスルツボの製造方法
JP7157932B2 (ja) * 2019-01-11 2022-10-21 株式会社Sumco シリカガラスルツボの製造装置および製造方法
JP7369573B2 (ja) * 2019-09-13 2023-10-26 信越石英株式会社 反射部材及びガラス積層部材の製造方法
JP7341017B2 (ja) * 2019-09-30 2023-09-08 信越石英株式会社 熱反射部材及び熱反射層付きガラス部材の製造方法
CN116648435A (zh) * 2020-12-18 2023-08-25 胜高股份有限公司 石英玻璃坩埚及其制造方法、以及单晶硅的制造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003034593A (ja) * 2001-07-23 2003-02-07 Shinetsu Quartz Prod Co Ltd シリコン単結晶引上げ用石英ガラスるつぼの製造方法及び装置
JP2004352580A (ja) * 2003-05-30 2004-12-16 Japan Siper Quarts Corp シリコン単結晶引上用石英ガラスルツボとその引上方法
JP2005206446A (ja) * 2004-07-16 2005-08-04 Shinetsu Quartz Prod Co Ltd シリコン単結晶引上げ用石英ガラスるつぼおよびその製造方法
JP2005343707A (ja) * 2004-05-31 2005-12-15 Japan Siper Quarts Corp 熱膨張を抑制した石英ガラスルツボとシリコン単結晶引上げ方法
JP2008201660A (ja) * 2006-03-30 2008-09-04 Covalent Materials Corp シリカガラスルツボ

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4935046A (en) * 1987-12-03 1990-06-19 Shin-Etsu Handotai Company, Limited Manufacture of a quartz glass vessel for the growth of single crystal semiconductor
JP2001122688A (ja) * 1999-10-27 2001-05-08 Nanwa Kuorutsu:Kk 石英ガラスるつぼ
JP4447738B2 (ja) * 2000-05-31 2010-04-07 信越石英株式会社 多層構造の石英ガラスルツボの製造方法
DE10041582B4 (de) * 2000-08-24 2007-01-18 Heraeus Quarzglas Gmbh & Co. Kg Quarzglastiegel sowie Verfahren zur Herstellung desselben
US6510707B2 (en) * 2001-03-15 2003-01-28 Heraeus Shin-Etsu America, Inc. Methods for making silica crucibles
KR100718314B1 (ko) * 2003-05-01 2007-05-15 신에쯔 세끼에이 가부시키가이샤 실리콘 단결정 인상용 석영유리 도가니 및 그 제조방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003034593A (ja) * 2001-07-23 2003-02-07 Shinetsu Quartz Prod Co Ltd シリコン単結晶引上げ用石英ガラスるつぼの製造方法及び装置
JP2004352580A (ja) * 2003-05-30 2004-12-16 Japan Siper Quarts Corp シリコン単結晶引上用石英ガラスルツボとその引上方法
JP2005343707A (ja) * 2004-05-31 2005-12-15 Japan Siper Quarts Corp 熱膨張を抑制した石英ガラスルツボとシリコン単結晶引上げ方法
JP2005206446A (ja) * 2004-07-16 2005-08-04 Shinetsu Quartz Prod Co Ltd シリコン単結晶引上げ用石英ガラスるつぼおよびその製造方法
JP2008201660A (ja) * 2006-03-30 2008-09-04 Covalent Materials Corp シリカガラスルツボ

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2194166A4 *

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011007491A1 (ja) * 2009-07-15 2011-01-20 信越石英株式会社 シリカ容器及びその製造方法
JP2011020886A (ja) * 2009-07-15 2011-02-03 Shinetsu Quartz Prod Co Ltd シリカ容器及びその製造方法
US8733127B2 (en) 2009-07-15 2014-05-27 Shin-Etsu Quartz Products Co., Ltd. Silica container and method for producing the same
US20120160155A1 (en) * 2009-09-09 2012-06-28 Japan Super Quartz Corporation Composite crucible, method of manufacturing the same, and method of manufacturing silicon crystal
US9133063B2 (en) * 2009-09-09 2015-09-15 Sumco Corporation Composite crucible, method of manufacturing the same, and method of manufacturing silicon crystal
JP2011073911A (ja) * 2009-09-30 2011-04-14 Covalent Materials Corp シリコン単結晶引上げ用シリカガラスルツボ
US9003832B2 (en) 2009-11-20 2015-04-14 Heraeus Shin-Etsu America, Inc. Method of making a silica crucible in a controlled atmosphere
US20120137963A1 (en) * 2010-12-01 2012-06-07 Japan Super Quartz Corporation Vitreous silica crucible
US9347148B2 (en) * 2010-12-01 2016-05-24 Sumco Corporation Vitreous silica crucible with specific ratio of transparent layer and bubble-containing layer thicknesses

Also Published As

Publication number Publication date
TWI383962B (zh) 2013-02-01
KR20100066252A (ko) 2010-06-17
TW200922890A (en) 2009-06-01
JP2009084113A (ja) 2009-04-23
EP2194166A4 (en) 2014-05-21
JP5143520B2 (ja) 2013-02-13
EP2194166A1 (en) 2010-06-09
US20100319608A1 (en) 2010-12-23

Similar Documents

Publication Publication Date Title
WO2009041684A1 (ja) シリカガラスルツボとその製造方法および引き上げ方法
US11167528B2 (en) Laminated glass article with determined stress profile and method for forming the same
CN102976595A (zh) 玻璃焊料焊接、条框和沟槽封边的平面真空玻璃及其制作方法
TW201236985A (en) Local stengthening of glass by ion-exchange
CN102951828A (zh) 玻璃焊料微波焊接条框和沟槽封边的平面真空玻璃及其制作方法
WO2010012890A3 (fr) Unite et procede de traitements de surface de verre plat avec conditionnement thermique du verre
CN102951806A (zh) 玻璃焊料微波焊接条框封边的凸面真空玻璃及其制作方法
CN103253857A (zh) 薄玻璃热钢化生产方法与设备
CA2681223A1 (en) Method of producing microchannel and nanochannel articles
CN102951825A (zh) 金属焊料焊接、沟槽封边的平面真空玻璃及其制作方法
CN102951809A (zh) 金属焊料微波焊接沟槽封边的平面真空玻璃及其制作方法
CN107012086A (zh) 一种实时荧光pcr热循环装置及pcr仪
CN102951815A (zh) 金属焊料微波焊接条框和沟槽封边的平面真空玻璃及其制作方法
JP2016153344A (ja) フロートガラス製造方法、フロートガラス製造装置、およびフロートガラス
WO2009094124A3 (en) Zone melt recrystallization for inorganic films
CN102951805A (zh) 玻璃焊料微波焊接沟槽封边的凸面真空玻璃及其制作方法
US9580347B2 (en) System and method for forming a glass sheet
CN108863047A (zh) 一种基于3d打印技术的cigs薄膜太阳能电池用玻璃板及其加工工艺
CN101157513A (zh) 玻璃再次成型工艺
WO2007099577A3 (en) Method of forming layers of getter material on glass parts
CN105502895A (zh) 一种石英玻璃铸锭生产装置
CN207918667U (zh) 一种玻璃熔炼装置
CN101134636A (zh) 一种玻璃瓶子及其制作工艺
WO2002051758A3 (de) Verfahren und vorrichtung zum vorspannen von gläsern, insbesondere trinkgläsern
CN203904501U (zh) 一种坩埚用溢流底板

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 1020087029176

Country of ref document: KR

Ref document number: 2008825826

Country of ref document: EP

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08825826

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 12303139

Country of ref document: US