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WO2009041462A1 - 窒化物系半導体発光素子、窒化物系半導体レーザ素子、窒化物系半導体発光ダイオードおよびそれらの製造方法ならびに窒化物系半導体層の形成方法 - Google Patents

窒化物系半導体発光素子、窒化物系半導体レーザ素子、窒化物系半導体発光ダイオードおよびそれらの製造方法ならびに窒化物系半導体層の形成方法 Download PDF

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Publication number
WO2009041462A1
WO2009041462A1 PCT/JP2008/067238 JP2008067238W WO2009041462A1 WO 2009041462 A1 WO2009041462 A1 WO 2009041462A1 JP 2008067238 W JP2008067238 W JP 2008067238W WO 2009041462 A1 WO2009041462 A1 WO 2009041462A1
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WIPO (PCT)
Prior art keywords
nitride
group semiconductor
light emitting
semiconductor light
plane
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Ceased
Application number
PCT/JP2008/067238
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English (en)
French (fr)
Inventor
Ryoji Hiroyama
Yasuto Miyake
Yasumitsu Kuno
Yasuyuki Bessho
Masayuki Hata
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Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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Priority claimed from JP2007253677A external-priority patent/JP5078528B2/ja
Priority claimed from JP2007289918A external-priority patent/JP5232993B2/ja
Priority claimed from JP2007331097A external-priority patent/JP5172322B2/ja
Priority claimed from JP2007338897A external-priority patent/JP5250759B2/ja
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to US12/680,412 priority Critical patent/US8750343B2/en
Priority to CN2008801089373A priority patent/CN101809833B/zh
Publication of WO2009041462A1 publication Critical patent/WO2009041462A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Abstract

　製造プロセスが複雑になるのを抑制することが可能で、かつ、発光効率の低下を抑制することが可能な窒化物系半導体発光素子が得られる。この窒化物系半導体発光素子（５０）は、基板（２１）の（１－１００）面からなる主表面上に形成され、（１－１００）面を主面とする発光層（２６）を有する窒化物系半導体素子層（２３）と、窒化物系半導体素子層（２３）の発光層（２６）を含む領域の端部に形成され、発光層（２６）の主面（（１－１００）面）に対して略垂直な方向に延びる（０００－１）面からなる端面（５０ａ）と、（０００－１）面からなる端面（５０ａ）と対向する領域に形成され、窒化物系半導体素子層（２３）の成長面からなり、端面（５０ａ）に対して角度θ１（約６２°）傾斜した方向に延びる反射面（５０ｃ）とを備える。
PCT/JP2008/067238 2007-09-28 2008-09-25 窒化物系半導体発光素子、窒化物系半導体レーザ素子、窒化物系半導体発光ダイオードおよびそれらの製造方法ならびに窒化物系半導体層の形成方法 Ceased WO2009041462A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/680,412 US8750343B2 (en) 2007-09-28 2008-09-25 Nitride-based semiconductor light-emitting device, nitride-based semiconductor laser device, nitride-based semiconductor light-emitting diode, method of manufacturing the same, and method of forming nitride-based semiconductor layer
CN2008801089373A CN101809833B (zh) 2007-09-28 2008-09-25 氮化物类半导体发光元件、氮化物类半导体激光元件、氮化物类半导体发光二极管及其制造方法和氮化物类半导体层的形成方法

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2007-253677 2007-09-28
JP2007253677A JP5078528B2 (ja) 2007-09-28 2007-09-28 窒化物系半導体層の形成方法
JP2007-289918 2007-11-07
JP2007289918A JP5232993B2 (ja) 2007-11-07 2007-11-07 窒化物系半導体発光素子およびその製造方法
JP2007-331097 2007-12-21
JP2007331097A JP5172322B2 (ja) 2007-12-21 2007-12-21 窒化物系半導体発光ダイオードおよびその製造方法
JP2007338897A JP5250759B2 (ja) 2007-12-28 2007-12-28 窒化物系半導体レーザ素子およびその製造方法
JP2007-338897 2007-12-28

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WO2009041462A1 true WO2009041462A1 (ja) 2009-04-02

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PCT/JP2008/067238 Ceased WO2009041462A1 (ja) 2007-09-28 2008-09-25 窒化物系半導体発光素子、窒化物系半導体レーザ素子、窒化物系半導体発光ダイオードおよびそれらの製造方法ならびに窒化物系半導体層の形成方法

Country Status (3)

Country Link
US (1) US8750343B2 (ja)
CN (2) CN101809833B (ja)
WO (1) WO2009041462A1 (ja)

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WO2011040486A1 (ja) * 2009-09-30 2011-04-07 住友電気工業株式会社 Iii族窒化物半導体レーザ素子、及びiii族窒化物半導体レーザ素子を作製する方法
US8750343B2 (en) 2007-09-28 2014-06-10 Future Light, Llc Nitride-based semiconductor light-emitting device, nitride-based semiconductor laser device, nitride-based semiconductor light-emitting diode, method of manufacturing the same, and method of forming nitride-based semiconductor layer
US20200313399A1 (en) * 2017-10-12 2020-10-01 Osram Oled Gmbh Semiconductor laser and method of production for optoelectronic semiconductor parts

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JP2009158647A (ja) * 2007-12-26 2009-07-16 Sharp Corp 窒化物系半導体レーザ素子およびその製造方法
JP5004989B2 (ja) * 2009-03-27 2012-08-22 シャープ株式会社 窒化物半導体発光素子及びその製造方法、並びに、半導体光学装置
JP4927121B2 (ja) * 2009-05-29 2012-05-09 シャープ株式会社 窒化物半導体ウェハ、窒化物半導体素子および窒化物半導体素子の製造方法
US20110001126A1 (en) * 2009-07-02 2011-01-06 Sharp Kabushiki Kaisha Nitride semiconductor chip, method of fabrication thereof, and semiconductor device
US20110042646A1 (en) * 2009-08-21 2011-02-24 Sharp Kabushiki Kaisha Nitride semiconductor wafer, nitride semiconductor chip, method of manufacture thereof, and semiconductor device
JP5742344B2 (ja) 2011-03-20 2015-07-01 富士通株式会社 受光素子、光受信器及び光受信モジュール
CN102255013B (zh) * 2011-08-01 2013-09-04 华灿光电股份有限公司 一种通过湿法剥离GaN基外延层和蓝宝石衬底来制备垂直结构发光二极管的方法
US8971370B1 (en) * 2011-10-13 2015-03-03 Soraa Laser Diode, Inc. Laser devices using a semipolar plane
KR20140140399A (ko) * 2013-05-29 2014-12-09 서울바이오시스 주식회사 복수개의 발광 요소들을 갖는 발광다이오드 및 그것을 제조하는 방법
US9692202B2 (en) * 2013-11-07 2017-06-27 Macom Technology Solutions Holdings, Inc. Lasers with beam shape and beam direction modification
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