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WO2009040939A1 - 磁気抵抗効果を用いた負性抵抗素子 - Google Patents

磁気抵抗効果を用いた負性抵抗素子 Download PDF

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Publication number
WO2009040939A1
WO2009040939A1 PCT/JP2007/069019 JP2007069019W WO2009040939A1 WO 2009040939 A1 WO2009040939 A1 WO 2009040939A1 JP 2007069019 W JP2007069019 W JP 2007069019W WO 2009040939 A1 WO2009040939 A1 WO 2009040939A1
Authority
WO
WIPO (PCT)
Prior art keywords
free
resistor element
magnetization layer
layer
magnetoresistive effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/069019
Other languages
English (en)
French (fr)
Inventor
Hiroki Maehara
Hitoshi Kubota
Akio Fukushima
Shinji Yuasa
Yoshishige Suzuki
Yoshinori Nagamine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Canon Anelva Corp
National Institute of Advanced Industrial Science and Technology AIST
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp, National Institute of Advanced Industrial Science and Technology AIST filed Critical Canon Anelva Corp
Priority to JP2008544596A priority Critical patent/JP4682367B2/ja
Priority to PCT/JP2007/069019 priority patent/WO2009040939A1/ja
Publication of WO2009040939A1 publication Critical patent/WO2009040939A1/ja
Priority to US12/468,369 priority patent/US8013408B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/70—Tunnel-effect diodes
    • H10D8/75—Tunnel-effect PN diodes, e.g. Esaki diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)

Abstract

　磁化自由層（３３）と、磁化自由層がもつ磁気モーメントよりも大きな磁気モーメントを有する磁化固定層（３１）と、磁化自由層と磁化固定層との間に設けられた中間層（３２）とを有する磁気抵抗素子を具備する負性抵抗素子である。磁化自由層側から電子が流れ込むように磁気抵抗素子に印加される電圧の上昇につれて磁化自由層の磁化方向の変化が連続的に引き起こされることにより負性抵抗を示すことを特徴とする。
PCT/JP2007/069019 2007-09-28 2007-09-28 磁気抵抗効果を用いた負性抵抗素子 Ceased WO2009040939A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008544596A JP4682367B2 (ja) 2007-09-28 2007-09-28 磁気抵抗効果を用いた負性抵抗素子
PCT/JP2007/069019 WO2009040939A1 (ja) 2007-09-28 2007-09-28 磁気抵抗効果を用いた負性抵抗素子
US12/468,369 US8013408B2 (en) 2007-09-28 2009-05-19 Negative-resistance device with the use of magneto-resistive effect

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/069019 WO2009040939A1 (ja) 2007-09-28 2007-09-28 磁気抵抗効果を用いた負性抵抗素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/468,369 Continuation US8013408B2 (en) 2007-09-28 2009-05-19 Negative-resistance device with the use of magneto-resistive effect

Publications (1)

Publication Number Publication Date
WO2009040939A1 true WO2009040939A1 (ja) 2009-04-02

Family

ID=40510852

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/069019 Ceased WO2009040939A1 (ja) 2007-09-28 2007-09-28 磁気抵抗効果を用いた負性抵抗素子

Country Status (3)

Country Link
US (1) US8013408B2 (ja)
JP (1) JP4682367B2 (ja)
WO (1) WO2009040939A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009246615A (ja) * 2008-03-31 2009-10-22 Tdk Corp 混合器および周波数変換装置
JP2011009551A (ja) * 2009-06-26 2011-01-13 Tdk Corp 混合器および周波数変換装置

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009044473A1 (ja) 2007-10-04 2009-04-09 Canon Anelva Corporation 高周波スパッタリング装置
WO2009044474A1 (ja) * 2007-10-04 2009-04-09 Canon Anelva Corporation 真空薄膜形成加工装置
JP4724871B2 (ja) * 2007-10-12 2011-07-13 キヤノンアネルバ株式会社 磁気抵抗素子を用いた増幅装置
JP2010080806A (ja) * 2008-09-29 2010-04-08 Canon Anelva Corp 磁気抵抗素子の製造法及びその記憶媒体
US8270206B2 (en) * 2008-10-16 2012-09-18 Tdk Corporation Spin high-frequency mixer and method of manufacture thereof
KR101616046B1 (ko) * 2009-10-05 2016-04-27 삼성전자주식회사 발진기 및 그 동작방법
JP5535316B2 (ja) 2010-06-10 2014-07-02 キヤノンアネルバ株式会社 発振素子および発振素子の製造方法
JP6042196B2 (ja) 2011-12-22 2016-12-14 キヤノンアネルバ株式会社 スパッタ装置、スパッタ装置の制御装置、および成膜方法
US8582253B1 (en) * 2012-06-04 2013-11-12 Western Digital (Fremont), Llc Magnetic sensor having a high spin polarization reference layer
US20140377915A1 (en) * 2013-06-20 2014-12-25 Infineon Technologies Ag Pre-mold for a magnet semiconductor assembly group and method of producing the same
DE112013007149T5 (de) * 2013-06-21 2016-02-25 Intel Corporation MTJ-Spin-Hall-MRAM-Bit-Zelle und -Anordnung
US9391262B1 (en) * 2013-12-23 2016-07-12 Intel Corporation Nanomagnetic devices switched with a spin hall effect
WO2017068611A1 (ja) 2015-10-21 2017-04-27 キヤノンアネルバ株式会社 磁気抵抗素子の製造方法
CN111010096B (zh) * 2019-11-27 2023-06-06 北京航空航天大学青岛研究院 基于负阻效应器件实现磁电阻比值放大的电路结构
CN111816711B (zh) * 2020-08-27 2024-02-09 中国科学院苏州纳米技术与纳米仿生研究所 共振隧穿二极管及其制作方法
CN112331769B (zh) * 2020-10-26 2022-09-27 华中科技大学 基于局部碰撞电离的负阻和非饱和磁阻效应共存的器件

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004158750A (ja) 2002-11-08 2004-06-03 Hitachi Ltd 磁気抵抗効果素子、磁気記録素子およびこれらを利用した装置

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
KISELEV S.I. ET AL.: "Microwave oscillations of a nanomagnet driven by a spin-polarized current", NATURE, vol. 425, 25 September 2003 (2003-09-25), pages 380 - 383, XP002329287, DOI: doi:10.1038/nature01967 *
MAEHARA D. ET AL.: "Spin-torque diode to Fusei Teiko Koka", THE MAGNETICS SOCIETY OF JAPAN, 27 February 2007 (2007-02-27), JAPAN DAI 153 KAI KENKYUKAI SHIRYO, pages 31 - 35 *
SUZUKI Y.: "Kinzoku Spintronics no Atarashii Tenkai -Tunnel Jiki Teiko Koka to Spin-torgue Diode", ATI NEWS, no. 4, November 2006 (2006-11-01), pages 2 - 6, Retrieved from the Internet <URL:http://www.ati.or.jp/pdf/ATINews- 04.pdf> *
TULAPURKAR A. ET AL.: "Spin-torque diode effect in magnetic tunnel junctions", NATURE, vol. 438, 17 November 2005 (2005-11-17), pages 339 - 342, XP003005251, DOI: doi:10.1038/nature04207 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009246615A (ja) * 2008-03-31 2009-10-22 Tdk Corp 混合器および周波数変換装置
JP2011009551A (ja) * 2009-06-26 2011-01-13 Tdk Corp 混合器および周波数変換装置

Also Published As

Publication number Publication date
JP4682367B2 (ja) 2011-05-11
US20090261436A1 (en) 2009-10-22
US8013408B2 (en) 2011-09-06
JPWO2009040939A1 (ja) 2011-01-13

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