WO2008138183A1 - Side emission type led - Google Patents
Side emission type led Download PDFInfo
- Publication number
- WO2008138183A1 WO2008138183A1 PCT/CN2007/002949 CN2007002949W WO2008138183A1 WO 2008138183 A1 WO2008138183 A1 WO 2008138183A1 CN 2007002949 W CN2007002949 W CN 2007002949W WO 2008138183 A1 WO2008138183 A1 WO 2008138183A1
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- WO
- WIPO (PCT)
- Prior art keywords
- metal substrate
- emitting diode
- light emitting
- side light
- die
- Prior art date
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
Definitions
- the present invention relates to the field of light emitting diodes, and more particularly to a side light emitting diode having a good heat dissipation effect, a large current carrying capacity, stable photoelectric characteristics, and low manufacturing cost. Background technique
- the structure of the side-light LED package mainly relates to a side-light LED package used in an LCD backlight unit, the side-light LED package comprises: an LED chip, a strip lead frame having teeth formed in a side edge thereof structure. The LED chip is mounted on the surface of the lead frame.
- the integral package body is made of a resin and includes a hollow front half having a cavity for accommodating the LED chip and a solid rear half separated from the front half by the lead frame.
- the tooth structure of the lead frame improves the resin flow, ensuring stability even if the LED package is made extremely thin.
- Fig. 1 is a front view of a package of a known side light emitting diode
- Fig. 2 is a cross-sectional view of a package of a known side light emitting diode.
- the strip lead frame A is placed in a mold as shown in Fig. 3. After the resin is injected into the mold, it flows with the grooves, fills all the voids, and solidifies into 3 ⁇ 4, forming a cavity in which the chip is placed.
- the object of the present invention is to provide a side light emitting diode with good heat dissipation effect and stable photoelectric characteristics, which is provided to solve the deficiencies of the prior art.
- Another object of the present invention is to provide a manufacturing process of a side light emitting diode having a good heat dissipation effect and stable photoelectric characteristics.
- a side light emitting diode comprising a die, an encapsulant, a bonding wire, and a package body holder
- the package body bracket adopts a metal substrate having a cavity structure
- the metal substrate is divided into two parts which are insulated from each other to form two electrodes
- the die is placed in the cavity of the metal substrate
- the bonding wires are respectively connected to the die electrode and the other part of the metal substrate
- the encapsulant colloids the die, the metal substrate cavity and the key
- the electrode pins of the wire and metal substrate are packaged, and the two portions of the metal substrate are connected together.
- one or more dies are provided in the cavity of the metal substrate.
- the die is placed in a cavity of a metal substrate by an adhesive.
- the cavity structure is elliptical or rectangular or elongated.
- a plating layer is provided on the surface of the metal substrate, and the plating layer is silver or gold, palladium or other metal having reflective properties.
- the upper surface of the package is a planar type, a concave lens type or a convex lens type.
- the adhesive is a conductive paste, an insulating paste or an auxiliary solder material.
- the one or more dies, bond wires, encapsulants, and metal substrates constitute a unit, and the metal substrates of the plurality of units form an array of cells integrally constituting M rows and N columns, wherein M 1, N ⁇ lc
- the manufacturing process of the side light emitting diode of the present invention is characterized in that it comprises the following steps: producing a metal substrate; forming the metal substrate into a regular shape with a cavity structure by a semi-etching process, and performing complete etching and perforation;
- the die is placed; the LED chips are respectively placed inside the metal substrate cavity; c, the wire bonding; the gold wire of the die electrode is connected with the other electrode of the metal substrate; d, the package; The semi-finished product of the wire bonding is packaged, and the resin is cured and molded;
- each device has independent structure and electrical characteristics
- the metal substrate is subjected to plate making, substrate coating photographic oil, exposure, micro-etching and cleaning, and the metal substrate is etched into one or more unit arrays into M rows and N columns of metal substrate combinations, wherein M 1, N ⁇ Lo
- the invention adopts a metal substrate holder having a cavity structure as an alternative to using a known plastic sealing bracket as a main package carrier body, and the metal substrate is divided into two parts which are insulated from each other to form two electrodes, and the die is placed in the metal substrate cavity through an adhesive.
- the bonding wires are respectively connected with the die electrode and the other electrode of the metal substrate, and the thermal conductivity is good, and the current can be carried large, which solves the problem that the conventional side light emitting diode has poor heat dissipation effect and low photoelectric stability, and overcomes the traditional package body bracket.
- the concept of plastic sealing has long been used, and the luminous efficiency has been greatly improved.
- the invention processes the metal sheet into a rule with a cavity structure by a semi-corrosion process Forming, then placing the die on the metal substrate inside the etched cavity structure, after the wire bonding is completed, encapsulating the die with the encapsulant, and simultaneously connecting the electrode of the side light emitting diode with the encapsulant, and finally separating the entire metal substrate
- the process designs side-emitting diodes to ensure a stable frame structure for internal electrical connection, and effectively reduces manufacturing costs. It has been experimentally proven that the manufacturing cost is reduced to that of conventional side-emitting diodes. 1/3 of the cost.
- Figure 1 is a front elevational view of a package of a known side light emitting diode
- FIG. 2 is a cross-sectional view of a package of a known side light emitting diode
- Figure 3 is a package mold of a known side light emitting diode
- Figure 5 is a plan view showing the completion of mounting the side light emitting diode chip of the present invention.
- Figure 6 is a plan view showing the completion of the wire bonding of the side light emitting diode of the present invention.
- Figure 7 is a structural view of the side light emitting diode of the present invention after final separation
- Figure 8 is a plan view showing the structure of the side light emitting diode of the present invention after final separation
- Fig. 9 is a structural view showing the final separation of the side light emitting diodes in the embodiment of the present invention.
- a side light emitting diode of the present invention comprises a die 4, an encapsulant 9, an adhesive, a bonding wire 5, and a metal substrate 1 having a cavity structure 2 as a package body, and a metal substrate 1
- Two electrodes 7 are formed for two portions insulated from each other, and the die 4 is placed on the adhesive by
- the adhesive is a conductive adhesive, an insulating adhesive or an auxiliary soldering material
- the cavity structure 2 is elliptical, rectangular, elongated or other shapes
- the bonding wires 5 are respectively connected to the die electrode and the metal substrate.
- the other part of the electrode, the encapsulant 8 encloses the die 4, the metal substrate cavity, the bonding wires 5, and the electrode pins 6 of the metal substrate, and connects the two portions of the metal substrate 1 at intervals.
- Each of the die, the bonding wire, the encapsulant, and the metal substrate constitutes a unit, and the metal substrates of the plurality of cells form an array of cells integrally constituting M rows and N columns, wherein M l, N 1 .
- the upper surface of the package is designed as a flat type, a concave lens type or a convex lens type according to the application requirements.
- the upper surface of the encapsulant 8 is spherical, and the encapsulant 8 can be colorless, transparent, scattered, fluorescent, etc. .
- the surface of the metal substrate 1 is plated with silver or other metal having good reflection properties such as palladium or gold.
- the manufacturing process of the side light emitting diode of the present invention is as follows -
- metal substrate molding As shown in FIG. 4, in this embodiment, the metal substrate 1 is formed by a semi-etching process to form a cavity structure 2, and at the same time, corrosion perforation is required, and the perforation 3 requires complete corrosion to ensure independent formation after the device is formed. Structure and complete electrical characteristics. More than one unit array is combined into a metal matrix of M rows and N columns, wherein M l, N ⁇ l ; main process routes are as follows:
- Metal substrate preparation plate making, substrate coating, photographic oil, exposure, micro-corrosion, cleaning
- the die is placed; as shown in FIG. 5, the dies 4 are respectively placed in corresponding positions inside the metal substrate cavity;
- Sub-board separate the side-emitting diode metal substrate assembly into a single device; each device Pieces have independent structural and electrical characteristics;
- the packaged product through the board process has independent structural and electrical characteristics.
- the embodiment is different from the above embodiment in that a plurality of dies are disposed in a cavity of the same metal substrate 1 , and a plurality of dies, bonding wires, and metal substrates are packaged in one package.
- the body forms a unit.
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Abstract
Description
侧面发光型 LED 技术领域 Side-emitting LED technology
本发明涉及发光二极管领域， 更具体地说是涉及一种具有散热效果 好、 可承载电流大、 光电特性稳定、 制造成本低的侧面发光二极管。 背景技术 The present invention relates to the field of light emitting diodes, and more particularly to a side light emitting diode having a good heat dissipation effect, a large current carrying capacity, stable photoelectric characteristics, and low manufacturing cost. Background technique
侧面发光二极管目前已经广泛应用于 PDA、 手机、 MP3等中小尺寸 LCD的背光单元的光源。 目前， 侧面发光二极管的亮度、 厚度等均发展 到比较高的水平， 如中国专利申请号为 200510133995.X, 申请日为 2006 年 8月 23日， 发明名称为具有设计成改善树脂流动的引线框结构的侧光 LED封装， 主要内容涉及了一种用于 LCD背光单元中的侧光 LED封装， 该侧光 LED封装包括： LED ^片， 条状引线框架, 具有形成在其侧边缘 中的齿结构。 LED芯片装配在引线框架的表面上。 一体的封装主体由树 脂制成， 且包括具有用于容纳 LED芯片的腔体的中空的前一半和通过引 线框架与前一半分开的实心的后一半。 引线框架的齿结构可改善树脂流 动， 从而即使 LED封装被做得极薄也能确保稳定性。 Side-emitting diodes have been widely used in light sources for backlight units of small and medium-sized LCDs such as PDAs, mobile phones, and MP3s. At present, the brightness and thickness of the side-emitting diodes have all reached a relatively high level, such as the Chinese patent application number 200510133995.X, and the application date is August 23, 2006, the invention name is a lead frame designed to improve resin flow. The structure of the side-light LED package mainly relates to a side-light LED package used in an LCD backlight unit, the side-light LED package comprises: an LED chip, a strip lead frame having teeth formed in a side edge thereof structure. The LED chip is mounted on the surface of the lead frame. The integral package body is made of a resin and includes a hollow front half having a cavity for accommodating the LED chip and a solid rear half separated from the front half by the lead frame. The tooth structure of the lead frame improves the resin flow, ensuring stability even if the LED package is made extremely thin.
参照图 1至图 2描述如下：图 1是已知侧面发光二极管的封装正视图， 图 2是已知侧面发光二极管的封装剖视图。 1 to 2 are described as follows: Fig. 1 is a front view of a package of a known side light emitting diode, and Fig. 2 is a cross-sectional view of a package of a known side light emitting diode.
首先条形引线框架 A放置在如图 3所示的铸模中， 树脂注入铸模后 随沟槽流动， 添满所有空隙后固化成¾， 形成放置芯片的腔体。 First, the strip lead frame A is placed in a mold as shown in Fig. 3. After the resin is injected into the mold, it flows with the grooves, fills all the voids, and solidifies into 3⁄4, forming a cavity in which the chip is placed.
由于已知产品采用塑封框架主体的结构，散热问题没有得到良好的解 决，光电稳定特性受到较大的限制。随着发光二极管生产技术的不断提高， 发光二极管应用范围不断扩大，发光二极管必须考虑散热问题，长期以来， 已知框架采用传统塑封的工艺并没有使这一问题得到有效解决。 Since the known product adopts the structure of the main body of the plastic frame, the heat dissipation problem is not well solved, and the photoelectric stability characteristics are greatly limited. With the continuous improvement of LED production technology, the application range of LEDs continues to expand, and LEDs must consider heat dissipation issues for a long time. The use of traditional plastic encapsulation processes for known frames does not effectively solve this problem.
发明内容 Summary of the invention
本发明的目的就是为了解决现有技术之不足而提供的一种散热效果 好、 光电特性稳定的侧面发光二极管。 The object of the present invention is to provide a side light emitting diode with good heat dissipation effect and stable photoelectric characteristics, which is provided to solve the deficiencies of the prior art.
本发明的另一目的在于提供一种散热效果好、光电特性稳定的侧面发 光二极管的制造工艺。 Another object of the present invention is to provide a manufacturing process of a side light emitting diode having a good heat dissipation effect and stable photoelectric characteristics.
本发明是采用如下技术解决方案来实现上述目的：一种侧面发光二极 管， 包括管芯、 封装胶体、 键合线， 封装主体支架， 其特征在于， 封装主 体支架采用具有腔体结构的金属基板，金属基板分为相互绝缘的两部分形 成两电极， 管芯安放于金属基板的腔体内，键合线分别连接管芯电极与金 属基板另一部分电极， 封装胶体将管芯、金属基板腔体、键合线、金属基 板的电极引脚封装起来， 并将金属基板间隔的两部分连接在一起。 The present invention achieves the above object by using the following technical solutions: a side light emitting diode comprising a die, an encapsulant, a bonding wire, and a package body holder, wherein the package body bracket adopts a metal substrate having a cavity structure, The metal substrate is divided into two parts which are insulated from each other to form two electrodes, the die is placed in the cavity of the metal substrate, the bonding wires are respectively connected to the die electrode and the other part of the metal substrate, and the encapsulant colloids the die, the metal substrate cavity and the key The electrode pins of the wire and metal substrate are packaged, and the two portions of the metal substrate are connected together.
作为上述方案的进一步说明，所述金属基板的腔体内设有一个或多个 管芯。 As further illustrated in the above scheme, one or more dies are provided in the cavity of the metal substrate.
所述管芯通过粘合剂安放于金属基板的腔体内。 The die is placed in a cavity of a metal substrate by an adhesive.
所述腔体结构为椭圆形或长方形或长条形。 The cavity structure is elliptical or rectangular or elongated.
所述金属基板表面设置镀层， 该镀层为银或金、钯其它具有反射性能 的金属。 A plating layer is provided on the surface of the metal substrate, and the plating layer is silver or gold, palladium or other metal having reflective properties.
所述封装胶体成型后封装上表面为平面型、 凹透镜型或凸透镜型。 所述粘合剂为导电胶、 绝缘胶或辅助焊接材料。 After the encapsulant is molded, the upper surface of the package is a planar type, a concave lens type or a convex lens type. The adhesive is a conductive paste, an insulating paste or an auxiliary solder material.
所述一个或多个管芯、 键合线、 封装胶体、 金属基板构成一个单元， 若干单元的金属基板形成一个整体构成 M行 N列的单元阵列， 其中 M 1， N^l c 本发明的侧面发光二极管的制造工艺，其特征在于， 它包括如下生产 a、 金属基板成型； 将金属基板采用半腐蚀工艺加工成带有腔体结构 的规则外形， 同时进行完全腐蚀穿孔； The one or more dies, bond wires, encapsulants, and metal substrates constitute a unit, and the metal substrates of the plurality of units form an array of cells integrally constituting M rows and N columns, wherein M 1, N^lc The manufacturing process of the side light emitting diode of the present invention is characterized in that it comprises the following steps: producing a metal substrate; forming the metal substrate into a regular shape with a cavity structure by a semi-etching process, and performing complete etching and perforation;
b、 管芯安放； 将发光二极管芯片分别安放于金属基板腔体内部； c、 引线键合； 将管芯电极用金线与金属基板另一电极引脚相连； d、 封装； 将 c过程中引线键合完成的半制品进行封装， 树脂固化成 型； b. The die is placed; the LED chips are respectively placed inside the metal substrate cavity; c, the wire bonding; the gold wire of the die electrode is connected with the other electrode of the metal substrate; d, the package; The semi-finished product of the wire bonding is packaged, and the resin is cured and molded;
e、 分板； 将侧面发光二极管金属基板组合分离为单个器件； 每个器 件具有独立的结构和电气特性； e, sub-board; separate side-emitting diode metal substrate assembly into a single device; each device has independent structure and electrical characteristics;
f、 测试； 对产品进行光电参数测试， 分为不同等级； f, testing; photoelectric parameter testing of products, divided into different levels;
g、 编带包装； 对 f过程中检验合格品进行包装入库。 g, braiding and packaging; packaging and inspection of qualified products in f process.
所述半腐蚀工艺中金属基板经过制版、基板涂镀感光油、 曝光、微腐 蚀以及清洗， 金属基板腐蚀为一个或多个单元阵列成 M行 N列的金属基 板组合， 其中 M 1， N^l o In the semi-etching process, the metal substrate is subjected to plate making, substrate coating photographic oil, exposure, micro-etching and cleaning, and the metal substrate is etched into one or more unit arrays into M rows and N columns of metal substrate combinations, wherein M 1, N^ Lo
本发明采用上述技术解决方案所能达到的有益效果是： The beneficial effects that the present invention can achieve by using the above technical solutions are:
1、 本发明采用具有腔体结构的金属基板支架作为替代使用已知塑封 支架作为主要封装承载主体， 金属基板分为相互绝缘的两部分形成两电 极，管芯通过粘合剂安放于金属基板腔体内，键合线分别连接管芯电极与 金属基板另一部分电极， 导热性能好， 可承载电流大， 解决了传统侧面发 光二极管散热效果差，光电稳定性低的问题，克服了传统的封装主体支架 长期以来采用塑封的观念， 发光效率大大提高。 1. The invention adopts a metal substrate holder having a cavity structure as an alternative to using a known plastic sealing bracket as a main package carrier body, and the metal substrate is divided into two parts which are insulated from each other to form two electrodes, and the die is placed in the metal substrate cavity through an adhesive. In the body, the bonding wires are respectively connected with the die electrode and the other electrode of the metal substrate, and the thermal conductivity is good, and the current can be carried large, which solves the problem that the conventional side light emitting diode has poor heat dissipation effect and low photoelectric stability, and overcomes the traditional package body bracket. The concept of plastic sealing has long been used, and the luminous efficiency has been greatly improved.
2、 本发明通过半腐蚀工艺将金属板加工成为带有腔体结构的规则外 形，然后将管芯安放于金属基板上腐蚀成型的腔体结构内部， 引线键合完 成后用封装胶体将管芯封装起来，同时利用封装胶体连接侧面发光二极管 的电极，最后将整个金属基板分离为具有独立结构和电气特性的侧面发光 二极管，该工艺将侧面发光二极管设计成确保内部电连接的稳定性框架结 构， 并且有效降低制造成本， 经实验证明， 其制造成本降低为传统侧面发 光二极管生产成本的 1/3。 2. The invention processes the metal sheet into a rule with a cavity structure by a semi-corrosion process Forming, then placing the die on the metal substrate inside the etched cavity structure, after the wire bonding is completed, encapsulating the die with the encapsulant, and simultaneously connecting the electrode of the side light emitting diode with the encapsulant, and finally separating the entire metal substrate For side-emitting diodes with independent structure and electrical characteristics, the process designs side-emitting diodes to ensure a stable frame structure for internal electrical connection, and effectively reduces manufacturing costs. It has been experimentally proven that the manufacturing cost is reduced to that of conventional side-emitting diodes. 1/3 of the cost.
附图说明 DRAWINGS
图 1是已知侧面发光二极管的封装正视图； . Figure 1 is a front elevational view of a package of a known side light emitting diode;
图 2是已知侧面发光二极管的封装剖视图； 2 is a cross-sectional view of a package of a known side light emitting diode;
图 3是已知侧面发光二极管的封装铸模； Figure 3 is a package mold of a known side light emitting diode;
图 4是本发明侧面发光二极管金属基板半腐蚀完成平面图； 4 is a half-corrosion completed plan view of a side light emitting diode metal substrate of the present invention;
图 5是本发明侧面发光二极管芯片安放完成平面图； Figure 5 is a plan view showing the completion of mounting the side light emitting diode chip of the present invention;
图 6是本发明侧面发光二极管引线键合完成平面图； Figure 6 is a plan view showing the completion of the wire bonding of the side light emitting diode of the present invention;
图 7是本发明侧面发光二极管最终分离后的结构图； Figure 7 is a structural view of the side light emitting diode of the present invention after final separation;
图 8是本发明侧面发光二极管最终分离后的结构俯视图； Figure 8 is a plan view showing the structure of the side light emitting diode of the present invention after final separation;
图 9是本发明实施例中侧面发光二极管最终分离后的结构图。 Fig. 9 is a structural view showing the final separation of the side light emitting diodes in the embodiment of the present invention.
附图标记说明： 1、金属基板 2、腔体结构 3、穿孔 4、管芯 5、 键合线 6、 电极引脚 7、 电极 8、 封装胶体 DESCRIPTION OF REFERENCE NUMERALS: 1. Metal substrate 2. Cavity structure 3. Perforation 4, die 5, bonding wire 6, electrode lead 7, electrode 8, package colloid
具体实施方式 detailed description
实施例 1 Example 1
如图 7所示，本发明一种侧面发光二极管， 包括管芯 4、封装胶体 9、 粘合剂、 键合线 5， 采用具有腔体结构 2的金属基板 1作为封装主体， 金 属基板 1分为相互绝缘的两部分形成两电极 7， 管芯 4通过粘合剂安放于 金属基板 1的腔体内， 粘合剂为导电胶、绝缘胶或辅助焊接材料， 腔体结 构 2为椭圆形、长方形、长条形或其它形状， 键合线 5分别连接管芯电极 与金属基板另一部分电极， 封装胶体 8将管芯 4、 金属基板腔体、 键合线 5、 金属基板的电极引脚 6封装起来， 并将金属基板 1间隔的两部分连接 在一起。 每一个管芯、 键合线、封装胶体、 金属基板构成一个单元， 若干 单元的金属基板形成一个整体构成 M行 N列的单元阵列， 其中 M l， N 1。 封装胶体 8成型后封装上表面根据应用需求设计为平面型、 凹透镜 型或凸透镜型， 本实施例中， 封装胶体 8上表面形状为球面， 封装胶体 8 可为无色透明、散射、荧光胶等。金属基板 1表面镀层为银或其它反射性 能较好的金属， 如钯、 金。 As shown in FIG. 7, a side light emitting diode of the present invention comprises a die 4, an encapsulant 9, an adhesive, a bonding wire 5, and a metal substrate 1 having a cavity structure 2 as a package body, and a metal substrate 1 Two electrodes 7 are formed for two portions insulated from each other, and the die 4 is placed on the adhesive by In the cavity of the metal substrate 1, the adhesive is a conductive adhesive, an insulating adhesive or an auxiliary soldering material, the cavity structure 2 is elliptical, rectangular, elongated or other shapes, and the bonding wires 5 are respectively connected to the die electrode and the metal substrate. The other part of the electrode, the encapsulant 8 encloses the die 4, the metal substrate cavity, the bonding wires 5, and the electrode pins 6 of the metal substrate, and connects the two portions of the metal substrate 1 at intervals. Each of the die, the bonding wire, the encapsulant, and the metal substrate constitutes a unit, and the metal substrates of the plurality of cells form an array of cells integrally constituting M rows and N columns, wherein M l, N 1 . After the encapsulant 8 is formed, the upper surface of the package is designed as a flat type, a concave lens type or a convex lens type according to the application requirements. In this embodiment, the upper surface of the encapsulant 8 is spherical, and the encapsulant 8 can be colorless, transparent, scattered, fluorescent, etc. . The surface of the metal substrate 1 is plated with silver or other metal having good reflection properties such as palladium or gold.
本发明侧面发光二极管制造过程如下- The manufacturing process of the side light emitting diode of the present invention is as follows -
1、 金属基板成型； 如图 4所示， 本实施实例将金属基板 1采用半腐 蚀工艺加工成型， 形成腔体结构 2， 同时进行腐蚀穿孔， 穿孔 3要求完全 腐蚀， 以保证器件成型后具备独立结构和完整电气特性。一个以上的单元 阵列成 M行 N列的金属基板组合， 其中 M l， N^l ; 主要工艺路线如 下： 1. Metal substrate molding; As shown in FIG. 4, in this embodiment, the metal substrate 1 is formed by a semi-etching process to form a cavity structure 2, and at the same time, corrosion perforation is required, and the perforation 3 requires complete corrosion to ensure independent formation after the device is formed. Structure and complete electrical characteristics. More than one unit array is combined into a metal matrix of M rows and N columns, wherein M l, N^l ; main process routes are as follows:
金属基板准备一制版一基板涂布感光油一曝光一微腐蚀一清洗 Metal substrate preparation, plate making, substrate coating, photographic oil, exposure, micro-corrosion, cleaning
2、 管芯安放； 如图 5所示， 将管芯 4分别安放于金属基板腔体内部 相应位置； 2. The die is placed; as shown in FIG. 5, the dies 4 are respectively placed in corresponding positions inside the metal substrate cavity;
3、 线键合； 如图 6所示， 将发光二极管的管芯电极用键合线 5与金 属基板另一电极引脚 6相连； 3. Wire bonding; as shown in FIG. 6, the die electrode of the LED is connected to the other electrode pin 6 of the metal substrate by a bonding wire 5;
4、 ·封装； 将引线键合完成的半制品进行封装， 树脂固化成型； 4. Packing; encapsulating the semi-finished products with wire bonding, curing the resin;
5、 分板； 将侧面发光二极管金属基板组合分离为单个器件； 每个器 件具有独立的结构和电气特性； 5. Sub-board; separate the side-emitting diode metal substrate assembly into a single device; each device Pieces have independent structural and electrical characteristics;
6、 测试； 对产品进行光电参数测试， 分为不同等级； 6. Testing; Perform photoelectric parameter testing on products, which are divided into different grades;
7、 编带包装； 对检验合格品进行包装入库。 7. Tape packaging; packaging and inspection of qualified products.
如图 7所示，经过分板工序的封装完成的产品具有独立的结构和电气 特性。 As shown in Figure 7, the packaged product through the board process has independent structural and electrical characteristics.
实施例 2 Example 2
如图 9所示， 本实施例与上述实施方式的不同之处在于， 所述同一金 属基板 1的腔体内设置多个管芯， 多个管芯、键合线以及金属基板封装于 一个封装胶体内构成一个单元。 As shown in FIG. 9 , the embodiment is different from the above embodiment in that a plurality of dies are disposed in a cavity of the same metal substrate 1 , and a plurality of dies, bonding wires, and metal substrates are packaged in one package. The body forms a unit.
如以上所述， 仅是本发明的优选实例而已， 并非用来限定本发明的范 围， 本领域技术人员还可做多种修改和变化， 在不脱离发明的精神下， 都 在本发明所要求保护范围。 As described above, the preferred embodiments of the present invention are not intended to limit the scope of the present invention, and various modifications and changes can be made by those skilled in the art without departing from the spirit of the invention. protected range.
Claims
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100279931A CN101060153A (en) | 2007-05-15 | 2007-05-15 | A side LED and its manufacture process |
| CN200710027993.1 | 2007-05-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2008138183A1 true WO2008138183A1 (en) | 2008-11-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/CN2007/002949 Ceased WO2008138183A1 (en) | 2007-05-15 | 2007-10-15 | Side emission type led |
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| Country | Link |
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| CN (1) | CN101060153A (en) |
| WO (1) | WO2008138183A1 (en) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101626000B (en) * | 2008-07-10 | 2014-11-26 | 晶元光电股份有限公司 | Metal array substrate, photoelectric element, light emitting element and manufacturing method thereof |
| US8450770B2 (en) * | 2010-05-11 | 2013-05-28 | Advanced Semiconductor Engineering, Inc. | Light emitting package structure |
| CN102044620A (en) * | 2010-11-11 | 2011-05-04 | 深圳市瑞丰光电子股份有限公司 | LED substrate and manufacturing method thereof and LED |
| US9735126B2 (en) | 2011-06-07 | 2017-08-15 | Infineon Technologies Ag | Solder alloys and arrangements |
| KR101186815B1 (en) * | 2011-10-10 | 2012-10-02 | 김영석 | Light emmitting diode package |
| CN102569553A (en) * | 2011-12-31 | 2012-07-11 | 深圳市蓝科电子有限公司 | Packaging technology for LED (light-emitting diode) |
| CN103378262B (en) * | 2012-04-26 | 2017-02-01 | 青岛青扬众创新能源科技有限公司 | Light emitting diode and encapsulating method thereof |
| CN102691935A (en) * | 2012-05-22 | 2012-09-26 | 深圳市华星光电技术有限公司 | Backlight system, manufacturing method of backlight system and flat panel display device |
| CN102916112B (en) * | 2012-10-31 | 2015-07-29 | 佛山市国星光电股份有限公司 | A kind of high power LED device and manufacture method thereof |
| CN103199184B (en) * | 2013-04-08 | 2016-04-20 | 厦门市三安光电科技有限公司 | A kind of encapsulating structure improving vertical LED chip brightness |
| CN103985677B (en) * | 2014-06-11 | 2016-09-07 | 扬州江新电子有限公司 | Ultra-thin plastic packaging semiconductor components and devices framework, components and parts and preparation method thereof |
| CN108491113B (en) * | 2018-03-05 | 2021-03-23 | 业成科技（成都）有限公司 | Ultrasonic touch device and manufacturing method thereof |
| CN108807171A (en) * | 2018-05-24 | 2018-11-13 | 烟台台芯电子科技有限公司 | A kind of diode low-temp ceramics packaging process |
| CN117936680B (en) * | 2024-01-25 | 2024-11-29 | 广东省旭晟光电技术有限公司 | A packaging colloid structure and packaging method thereof |
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| JP2000077725A (en) * | 1998-08-27 | 2000-03-14 | Shichizun Denshi:Kk | Semiconductor package and manufacturing method thereof |
| US6822269B2 (en) * | 2001-11-26 | 2004-11-23 | Citizen Electronics Co., Ltd. | Light emitting diode device |
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- 2007-10-15 WO PCT/CN2007/002949 patent/WO2008138183A1/en not_active Ceased
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| JP2000077725A (en) * | 1998-08-27 | 2000-03-14 | Shichizun Denshi:Kk | Semiconductor package and manufacturing method thereof |
| US6822269B2 (en) * | 2001-11-26 | 2004-11-23 | Citizen Electronics Co., Ltd. | Light emitting diode device |
| CN1855561A (en) * | 2005-04-30 | 2006-11-01 | 三星电机株式会社 | Method for manufacturing light emitting diode package |
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