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WO2008136479A1 - 導波路結合型フォトダイオード - Google Patents

導波路結合型フォトダイオード Download PDF

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Publication number
WO2008136479A1
WO2008136479A1 PCT/JP2008/058243 JP2008058243W WO2008136479A1 WO 2008136479 A1 WO2008136479 A1 WO 2008136479A1 JP 2008058243 W JP2008058243 W JP 2008058243W WO 2008136479 A1 WO2008136479 A1 WO 2008136479A1
Authority
WO
WIPO (PCT)
Prior art keywords
waveguide path
semiconductor light
light absorbing
absorbing layer
type photodiode
Prior art date
Application number
PCT/JP2008/058243
Other languages
English (en)
French (fr)
Inventor
Junichi Fujikata
Jun Ushida
Daisuke Okamoto
Kenichi Nishi
Keishi Ohashi
Tai Tsuchizawa
Seiichi Itabashi
Original Assignee
Nec Corporation
Nippon Telegraph And Telephone Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation, Nippon Telegraph And Telephone Corporation filed Critical Nec Corporation
Priority to JP2009513019A priority Critical patent/JPWO2008136479A1/ja
Priority to US12/598,162 priority patent/US8467637B2/en
Publication of WO2008136479A1 publication Critical patent/WO2008136479A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1226—Basic optical elements, e.g. light-guiding paths involving surface plasmon interaction
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/407—Optical elements or arrangements indirectly associated with the devices
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)

Abstract

　半導体光吸収層と光導波路コアとが隣接して設けられた導波路結合型フォトダイオードである。前記半導体光吸収層と前記光導波路コアとの境界部に、少なくとも一層からなる電極が設けられる。前記電極は、（１／１００）λ～λ［λ：前記光導波路コアを伝播する光の波長］の間隔で設けられたものである。前記電極の少なくとも一部が前記半導体光吸収層に埋め込まれたものである。前記半導体光吸収層の表面からの前記埋め込み深さはλ／（２ｎs）［ｎs：前記半導体光吸収層の屈折率］以下の値の深さである。前記電極の少なくとも一層は、表面プラズモン誘起可能な材料で構成されてなる。  
PCT/JP2008/058243 2007-05-01 2008-04-30 導波路結合型フォトダイオード WO2008136479A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009513019A JPWO2008136479A1 (ja) 2007-05-01 2008-04-30 導波路結合型フォトダイオード
US12/598,162 US8467637B2 (en) 2007-05-01 2008-04-30 Waveguide path coupling-type photodiode

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-120897 2007-05-01
JP2007120897 2007-05-01
JP2008039893 2008-02-21
JP2008-039893 2008-02-21

Publications (1)

Publication Number Publication Date
WO2008136479A1 true WO2008136479A1 (ja) 2008-11-13

Family

ID=39943586

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058243 WO2008136479A1 (ja) 2007-05-01 2008-04-30 導波路結合型フォトダイオード

Country Status (3)

Country Link
US (1) US8467637B2 (ja)
JP (1) JPWO2008136479A1 (ja)
WO (1) WO2008136479A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
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JP2011076086A (ja) * 2009-09-30 2011-04-14 Intel Corp 導波路結合された表面プラズモンポラリトン光検出器
JP2013178498A (ja) * 2012-02-08 2013-09-09 Kagawa Univ プラズモンチップ
US9625648B2 (en) 2008-12-16 2017-04-18 Ciena Corporation Method for fabricating a monolithic optoelectronic device

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US8644648B2 (en) * 2008-10-20 2014-02-04 Northwestern University Organic electro-optic modulators with transparent conducting electrodes and related device structures
US20120006981A1 (en) * 2009-03-31 2012-01-12 Imec Waveguide integrated photodetector
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US9389344B2 (en) 2011-06-28 2016-07-12 Colorado School Of Mines Spectroscopic polarimeter
JP6046377B2 (ja) * 2011-08-09 2016-12-14 ローム株式会社 光検出素子、光検出装置およびオートライト装置
US8670638B2 (en) * 2011-09-29 2014-03-11 Broadcom Corporation Signal distribution and radiation in a wireless enabled integrated circuit (IC) using a leaky waveguide
US9570420B2 (en) 2011-09-29 2017-02-14 Broadcom Corporation Wireless communicating among vertically arranged integrated circuits (ICs) in a semiconductor package
US9075105B2 (en) 2011-09-29 2015-07-07 Broadcom Corporation Passive probing of various locations in a wireless enabled integrated circuit (IC)
US9318785B2 (en) 2011-09-29 2016-04-19 Broadcom Corporation Apparatus for reconfiguring an integrated waveguide
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JP6115566B2 (ja) * 2012-03-30 2017-04-19 日本電気株式会社 導波路結合ｍｓｍ型フォトダイオード
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JP5920128B2 (ja) * 2012-09-07 2016-05-18 住友電気工業株式会社 光導波路型受光素子の製造方法および光導波路型受光素子
JP5929709B2 (ja) * 2012-10-31 2016-06-08 富士通オプティカルコンポーネンツ株式会社 光変調装置及び光送信機
JP6089953B2 (ja) * 2013-05-17 2017-03-08 住友電気工業株式会社 Ｉｉｉ−ｖ化合物半導体素子を作製する方法
US9417383B2 (en) * 2013-07-10 2016-08-16 Bae Systems Information And Electronic Systems Integration Inc. Three-dimensional electronic photonic integrated circuit fabrication process
US9389378B2 (en) 2014-02-03 2016-07-12 Luxtera, Inc. Method and system for optical power monitoring of a light source assembly coupled to a silicon photonically-enabled integrated circuit
TWI591834B (zh) 2014-08-12 2017-07-11 Pgi股份有限公司 光學感測器及其製造方法
US9627575B2 (en) 2014-09-11 2017-04-18 International Business Machines Corporation Photodiode structures
EP3141941B1 (en) * 2015-09-10 2019-11-27 ams AG Semiconductor device with photonic and electronic functionality and method for manufacturing a semiconductor device
US9871067B2 (en) * 2015-11-17 2018-01-16 Taiwan Semiconductor Manufacturing Co., Ltd. Infrared image sensor component
JP6191048B1 (ja) * 2016-03-30 2017-09-06 住友大阪セメント株式会社 Ｆｐｃ付き光変調器、及びそれを用いた光送信装置
US9749044B1 (en) * 2016-04-05 2017-08-29 Facebook, Inc. Luminescent detector for free-space optical communication
TWI674682B (zh) * 2016-09-07 2019-10-11 優顯科技股份有限公司 光電半導體裝置及其製造方法
JP6836547B2 (ja) * 2018-05-21 2021-03-03 日本電信電話株式会社 光検出器
JP7112254B2 (ja) * 2018-05-31 2022-08-03 ルネサスエレクトロニクス株式会社 半導体モジュールおよび半導体モジュールを用いた通信方法
JP2020086046A (ja) * 2018-11-21 2020-06-04 ルネサスエレクトロニクス株式会社 半導体モジュールおよびその製造方法、並びに、半導体モジュールを用いた通信方法
CN114365039B (zh) * 2019-06-10 2025-05-09 迈络思科技有限公司 光电装置及其制造方法
EP4030225B1 (en) * 2019-09-12 2024-03-27 Nippon Telegraph And Telephone Corporation Semiconductor mach-zehnder optical modulator and iq modulator
KR102475560B1 (ko) * 2020-11-12 2022-12-09 한국과학기술원 향상된 성능을 갖는 박막화된 초격자 광검출기 및 그의 제조 방법
CN113629187B (zh) * 2021-08-04 2024-01-02 北京航空航天大学 一种光电神经突触忆阻器

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9625648B2 (en) 2008-12-16 2017-04-18 Ciena Corporation Method for fabricating a monolithic optoelectronic device
JP2011076086A (ja) * 2009-09-30 2011-04-14 Intel Corp 導波路結合された表面プラズモンポラリトン光検出器
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Also Published As

Publication number Publication date
US20100119192A1 (en) 2010-05-13
US8467637B2 (en) 2013-06-18
JPWO2008136479A1 (ja) 2010-07-29

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