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WO2008136372A1 - Matière de base de photorésist et composition de photorésist contenant celle-ci - Google Patents

Matière de base de photorésist et composition de photorésist contenant celle-ci Download PDF

Info

Publication number
WO2008136372A1
WO2008136372A1 PCT/JP2008/058009 JP2008058009W WO2008136372A1 WO 2008136372 A1 WO2008136372 A1 WO 2008136372A1 JP 2008058009 W JP2008058009 W JP 2008058009W WO 2008136372 A1 WO2008136372 A1 WO 2008136372A1
Authority
WO
WIPO (PCT)
Prior art keywords
photoresist
base material
same
composition containing
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/058009
Other languages
English (en)
Japanese (ja)
Inventor
Takanori Owada
Mitsuru Shibata
Akinori Yomogita
Takashi Kashiwamura
Norio Tomotsu
Hirotoshi Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Idemitsu Kosan Co Ltd
Original Assignee
Idemitsu Kosan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Idemitsu Kosan Co Ltd filed Critical Idemitsu Kosan Co Ltd
Priority to JP2009512958A priority Critical patent/JPWO2008136372A1/ja
Publication of WO2008136372A1 publication Critical patent/WO2008136372A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/66—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety
    • C07C69/67—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety of saturated acids
    • C07C69/708—Ethers
    • C07C69/712—Ethers the hydroxy group of the ester being etherified with a hydroxy compound having the hydroxy group bound to a carbon atom of a six-membered aromatic ring
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C43/00—Ethers; Compounds having groups, groups or groups
    • C07C43/30—Compounds having groups
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2601/00—Systems containing only non-condensed rings
    • C07C2601/12—Systems containing only non-condensed rings with a six-membered ring
    • C07C2601/14—The ring being saturated
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2602/00—Systems containing two condensed rings
    • C07C2602/36—Systems containing two condensed rings the rings having more than two atoms in common
    • C07C2602/42—Systems containing two condensed rings the rings having more than two atoms in common the bicyclo ring system containing seven carbon atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00—Systems containing at least three condensed rings
    • C07C2603/56—Ring systems containing bridged rings
    • C07C2603/58—Ring systems containing bridged rings containing three rings
    • C07C2603/70—Ring systems containing bridged rings containing three rings containing only six-membered rings
    • C07C2603/74—Adamantanes
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00—Systems containing at least three condensed rings
    • C07C2603/92—Systems containing at least three condensed rings with a condensed ring system consisting of at least two mutually uncondensed aromatic ring systems, linked by an annular structure formed by carbon chains on non-adjacent positions of the aromatic system, e.g. cyclophanes

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)

Abstract

L'invention concerne une matière de base de photorésist contenant un composé ayant un groupe inhibiteur de dissolution libérable par un acide. Au moins l'un desdits groupes inhibiteurs de dissolution libérables par un acide a une structure monocyclique ou une structure hétérocyclique ayant une masse moléculaire supérieure ou égale à 60 et inférieure à 2000 et lesdits groupes inhibiteurs de dissolution libérables par un acide contiennent au moins un atome de carbone, un atome d'hydrogène et un atome d'oxygène.
PCT/JP2008/058009 2007-04-27 2008-04-25 Matière de base de photorésist et composition de photorésist contenant celle-ci Ceased WO2008136372A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009512958A JPWO2008136372A1 (ja) 2007-04-27 2008-04-25 フォトレジスト基材、及びそれを含んでなるフォトレジスト組成物

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-119551 2007-04-27
JP2007119551 2007-04-27
JP2007-301839 2007-11-21
JP2007301839 2007-11-21

Publications (1)

Publication Number Publication Date
WO2008136372A1 true WO2008136372A1 (fr) 2008-11-13

Family

ID=39943481

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058009 Ceased WO2008136372A1 (fr) 2007-04-27 2008-04-25 Matière de base de photorésist et composition de photorésist contenant celle-ci

Country Status (3)

Country Link
JP (1) JPWO2008136372A1 (fr)
TW (1) TW200905398A (fr)
WO (1) WO2008136372A1 (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009173625A (ja) * 2007-05-09 2009-08-06 Mitsubishi Gas Chem Co Inc 感放射線性組成物、化合物、化合物の製造方法およびレジストパターン形成方法
JP2010262241A (ja) * 2009-05-11 2010-11-18 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物、レジストパターン形成方法、高分子化合物、化合物
JP2011028270A (ja) * 2009-07-23 2011-02-10 Internatl Business Mach Corp <Ibm> カリックスアレーン・ブレンド分子ガラス・フォトレジスト及び使用のプロセス
CN102666461A (zh) * 2009-11-27 2012-09-12 三菱瓦斯化学株式会社 环状化合物、其生产方法、放射线敏感性组合物和抗蚀图案形成方法
JP2013079230A (ja) * 2011-09-23 2013-05-02 Rohm & Haas Electronic Materials Llc カリックスアレーンおよびこれを含むフォトレジスト組成物
CN105206526A (zh) * 2014-06-23 2015-12-30 东京毅力科创株式会社 基板处理方法、基板处理装置以及基板处理系统

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110183297A (zh) * 2019-07-06 2019-08-30 潍坊大耀新材料有限公司 一种亲生物性通用杯芳烃中间体的制备方法及其制备的杯芳烃中间体

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004036315A1 (fr) * 2002-10-15 2004-04-29 Idemitsu Kosan Co., Ltd. Support photosensible, procede de purification associe et compositions photosensibles
WO2005097725A1 (fr) * 2004-04-05 2005-10-20 Idemitsu Kosan Co., Ltd. Composes de calixresorcinarene, materiaux de base de photoresist, et compositions de ceux-ci

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004036315A1 (fr) * 2002-10-15 2004-04-29 Idemitsu Kosan Co., Ltd. Support photosensible, procede de purification associe et compositions photosensibles
WO2005097725A1 (fr) * 2004-04-05 2005-10-20 Idemitsu Kosan Co., Ltd. Composes de calixresorcinarene, materiaux de base de photoresist, et compositions de ceux-ci

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009173625A (ja) * 2007-05-09 2009-08-06 Mitsubishi Gas Chem Co Inc 感放射線性組成物、化合物、化合物の製造方法およびレジストパターン形成方法
JP2010262241A (ja) * 2009-05-11 2010-11-18 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物、レジストパターン形成方法、高分子化合物、化合物
JP2011028270A (ja) * 2009-07-23 2011-02-10 Internatl Business Mach Corp <Ibm> カリックスアレーン・ブレンド分子ガラス・フォトレジスト及び使用のプロセス
CN102666461A (zh) * 2009-11-27 2012-09-12 三菱瓦斯化学株式会社 环状化合物、其生产方法、放射线敏感性组合物和抗蚀图案形成方法
US8969629B2 (en) 2009-11-27 2015-03-03 Mitsubishi Gas Chemical Company, Inc. Cyclic compound, production process thereof, radiation-sensitive composition and resist pattern formation method
JP2013079230A (ja) * 2011-09-23 2013-05-02 Rohm & Haas Electronic Materials Llc カリックスアレーンおよびこれを含むフォトレジスト組成物
CN105206526A (zh) * 2014-06-23 2015-12-30 东京毅力科创株式会社 基板处理方法、基板处理装置以及基板处理系统
JP2016027617A (ja) * 2014-06-23 2016-02-18 東京エレクトロン株式会社 基板処理方法、基板処理装置、基板処理システム及び記憶媒体

Also Published As

Publication number Publication date
TW200905398A (en) 2009-02-01
JPWO2008136372A1 (ja) 2010-07-29

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