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WO2008136188A1 - Ｘ線撮像デバイス及びｘ線撮影装置 - Google Patents

Ｘ線撮像デバイス及びｘ線撮影装置 Download PDF

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Publication number
WO2008136188A1
WO2008136188A1 PCT/JP2008/001099 JP2008001099W WO2008136188A1 WO 2008136188 A1 WO2008136188 A1 WO 2008136188A1 JP 2008001099 W JP2008001099 W JP 2008001099W WO 2008136188 A1 WO2008136188 A1 WO 2008136188A1
Authority
WO
WIPO (PCT)
Prior art keywords
ray
detection unit
imaging device
charge injection
injection blocking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/001099
Other languages
English (en)
French (fr)
Inventor
Toshiyoshi Yamamoto
Yoshihiro Ino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Priority to US12/597,057 priority Critical patent/US8270567B2/en
Priority to JP2009512882A priority patent/JPWO2008136188A1/ja
Priority to CN2008800134070A priority patent/CN101669186B/zh
Priority to EP08751624.1A priority patent/EP2144271B1/en
Publication of WO2008136188A1 publication Critical patent/WO2008136188A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/246—Measuring radiation intensity with semiconductor detectors utilizing latent read-out, e.g. charge stored and read-out later
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/26—Image pick-up tubes having an input of visible light and electric output
    • H01J31/28—Image pick-up tubes having an input of visible light and electric output with electron ray scanning the image screen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/49—Pick-up adapted for an input of electromagnetic radiation other than visible light and having an electric output, e.g. for an input of X-rays, for an input of infrared radiation
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/30—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from X-rays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/301—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to very short wavelength, e.g. being sensitive to X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Multimedia (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Signal Processing (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Measurement Of Radiation (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

　Ｘ線撮像デバイス（１）は、Ｘ線検出部（２）、冷電子源（３）、及び遮光コーティング層（９）を備える。Ｘ線検出部（２）は、Ｘ線が入射すると電荷を発生するＸ線変換材料からなるＸ線変換層と、Ｘ線変換層の入射面に形成された第１の電荷注入阻止層、及びＸ線変換層の背面に形成された第２の電荷注入阻止層を備える。冷電子源（３）は、それぞれＸ線検出部（２）の第２の電荷注入阻止層に向けて電子を放出可能である複数のマトリクス状に配置された電子放出部を備える。遮光コーティング層（９）はＸ線検出部（２）への可視光の入射を遮る。
PCT/JP2008/001099 2007-04-26 2008-04-25 Ｘ線撮像デバイス及びｘ線撮影装置 Ceased WO2008136188A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/597,057 US8270567B2 (en) 2007-04-26 2008-04-25 X-ray imaging device and X-ray radiographic apparatus
JP2009512882A JPWO2008136188A1 (ja) 2007-04-26 2008-04-25 Ｘ線撮像デバイス及びｘ線撮影装置
CN2008800134070A CN101669186B (zh) 2007-04-26 2008-04-25 X射线摄像设备及x射线摄影装置
EP08751624.1A EP2144271B1 (en) 2007-04-26 2008-04-25 X-ray imaging device and x-ray radiographic apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-116939 2007-04-26
JP2007116939 2007-04-26

Publications (1)

Publication Number Publication Date
WO2008136188A1 true WO2008136188A1 (ja) 2008-11-13

Family

ID=39943309

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/001099 Ceased WO2008136188A1 (ja) 2007-04-26 2008-04-25 Ｘ線撮像デバイス及びｘ線撮影装置

Country Status (6)

Country Link
US (1) US8270567B2 (ja)
EP (1) EP2144271B1 (ja)
JP (1) JPWO2008136188A1 (ja)
KR (1) KR20100015849A (ja)
CN (1) CN101669186B (ja)
WO (1) WO2008136188A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013063164A (ja) * 2011-09-16 2013-04-11 Univ Of Tsukuba 生体内留置物可視化装置
US20150092923A1 (en) * 2012-03-16 2015-04-02 Nanox Imaging Plc Devices having an electron emitting structure
US9922793B2 (en) 2012-08-16 2018-03-20 Nanox Imaging Plc Image capture device
US10269527B2 (en) 2013-11-27 2019-04-23 Nanox Imaging Plc Electron emitting construct configured with ion bombardment resistant
JP2021519427A (ja) * 2018-03-29 2021-08-10 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 多孔質シリコン量子ドット放射線検出器におけるピクセル定義

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5965665B2 (ja) * 2012-02-23 2016-08-10 ジーイー・メディカル・システムズ・グローバル・テクノロジー・カンパニー・エルエルシー 検出器モジュール、遮光部材および放射線検出装置並びに放射線断層撮影装置
WO2015063665A1 (en) * 2013-11-01 2015-05-07 Koninklijke Philips N.V. Radiation detector and detection method having reduced polarization
CN104237264B (zh) * 2014-09-10 2017-01-11 西安交通大学 多规格自动进片调节装置
US10825939B2 (en) * 2016-01-07 2020-11-03 The Research Foundation For The State University Of New York Selenium photomultiplier and method for fabrication thereof
WO2018071542A1 (en) * 2016-10-11 2018-04-19 Source Production & Equipment Co., Inc. Delivering radiation
JP6863267B2 (ja) * 2017-12-21 2021-04-21 株式会社島津製作所 Ｘ線分析装置及び異常検知方法
JP6790005B2 (ja) * 2018-02-23 2020-11-25 株式会社東芝 検出素子および検出器
JP6790008B2 (ja) * 2018-03-14 2020-11-25 株式会社東芝 検出素子および検出器
CN110911501A (zh) * 2019-12-04 2020-03-24 中国工程物理研究院材料研究所 一种探测装置
CN111180472A (zh) * 2019-12-23 2020-05-19 德润特医疗科技（武汉）有限公司 一种多层复式x射线探测器

Citations (5)

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JPH07335927A (ja) * 1994-06-03 1995-12-22 Japan Energy Corp 半導体放射線検出器の製造方法
JPH10282243A (ja) * 1997-04-09 1998-10-23 Hamamatsu Photonics Kk 医療用小型ｘ線画像検出装置
JP2000048743A (ja) * 1998-05-26 2000-02-18 Futaba Corp 平面形撮像装置及びその製造方法
JP2001148475A (ja) 1999-09-08 2001-05-29 Sharp Corp 二次元画像検出器の製造方法および二次元画像検出器
WO2004114314A1 (ja) * 2003-06-11 2004-12-29 Matsushita Electric Industrial Co., Ltd. 情報記憶装置

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FR2608842B1 (fr) 1986-12-22 1989-03-03 Commissariat Energie Atomique Transducteur photo-electronique utilisant une cathode emissive a micropointes
US5117114A (en) 1989-12-11 1992-05-26 The Regents Of The University Of California High resolution amorphous silicon radiation detectors
US5515411A (en) 1993-03-31 1996-05-07 Shimadzu Corporation X-ray image pickup tube
US6078643A (en) * 1998-05-07 2000-06-20 Infimed, Inc. Photoconductor-photocathode imager
JP3969981B2 (ja) * 2000-09-22 2007-09-05 キヤノン株式会社 電子源の駆動方法、駆動回路、電子源および画像形成装置
US7099428B2 (en) * 2002-06-25 2006-08-29 The Regents Of The University Of Michigan High spatial resolution X-ray computed tomography (CT) system

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07335927A (ja) * 1994-06-03 1995-12-22 Japan Energy Corp 半導体放射線検出器の製造方法
JPH10282243A (ja) * 1997-04-09 1998-10-23 Hamamatsu Photonics Kk 医療用小型ｘ線画像検出装置
JP2000048743A (ja) * 1998-05-26 2000-02-18 Futaba Corp 平面形撮像装置及びその製造方法
JP2001148475A (ja) 1999-09-08 2001-05-29 Sharp Corp 二次元画像検出器の製造方法および二次元画像検出器
WO2004114314A1 (ja) * 2003-06-11 2004-12-29 Matsushita Electric Industrial Co., Ltd. 情報記憶装置

Non-Patent Citations (2)

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Title
See also references of EP2144271A4
YOSHIHIRO IZUMI ET AL.: "Sharp Technical Report No. 80", August 2001, SHARP CO., LTD., article "Development of Flat Panel X-Ray Image Sensor", pages: 25

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013063164A (ja) * 2011-09-16 2013-04-11 Univ Of Tsukuba 生体内留置物可視化装置
US20150092923A1 (en) * 2012-03-16 2015-04-02 Nanox Imaging Plc Devices having an electron emitting structure
US10242836B2 (en) * 2012-03-16 2019-03-26 Nanox Imaging Plc Devices having an electron emitting structure
US9922793B2 (en) 2012-08-16 2018-03-20 Nanox Imaging Plc Image capture device
US10269527B2 (en) 2013-11-27 2019-04-23 Nanox Imaging Plc Electron emitting construct configured with ion bombardment resistant
JP2021519427A (ja) * 2018-03-29 2021-08-10 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 多孔質シリコン量子ドット放射線検出器におけるピクセル定義
JP7191116B2 (ja) 2018-03-29 2022-12-16 コーニンクレッカ フィリップス エヌ ヴェ 多孔質シリコン量子ドット放射線検出器におけるピクセル定義

Also Published As

Publication number Publication date
EP2144271A1 (en) 2010-01-13
US20100128845A1 (en) 2010-05-27
KR20100015849A (ko) 2010-02-12
US8270567B2 (en) 2012-09-18
EP2144271B1 (en) 2014-04-09
CN101669186B (zh) 2012-04-25
CN101669186A (zh) 2010-03-10
EP2144271A4 (en) 2010-12-08
JPWO2008136188A1 (ja) 2010-07-29

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