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WO2008133156A1 - Film protecteur conducteur et son procédé de fabrication - Google Patents

Film protecteur conducteur et son procédé de fabrication Download PDF

Info

Publication number
WO2008133156A1
WO2008133156A1 PCT/JP2008/057466 JP2008057466W WO2008133156A1 WO 2008133156 A1 WO2008133156 A1 WO 2008133156A1 JP 2008057466 W JP2008057466 W JP 2008057466W WO 2008133156 A1 WO2008133156 A1 WO 2008133156A1
Authority
WO
WIPO (PCT)
Prior art keywords
protective film
boron
producing
disclosed
conductive diamond
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/057466
Other languages
English (en)
Japanese (ja)
Inventor
Hideki Nakamori
Masanori Hiratsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanotec Corp
Original Assignee
Nanotec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanotec Corp filed Critical Nanotec Corp
Priority to KR1020087031185A priority Critical patent/KR101485139B1/ko
Priority to JP2009511836A priority patent/JP5295102B2/ja
Publication of WO2008133156A1 publication Critical patent/WO2008133156A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

L'invention concerne un film protecteur de carbone sous forme de diamant amorphe conducteur, présentant à la fois une rigidité élevée et une résistance à l'usure élevée fabriqué par un procédé de formation de film spécifique. L'invention concerne également un procédé de fabrication d'un tel film protecteur de carbone sous forme de diamant amorphe conducteur. L'invention concerne spécifiquement un procédé de fabrication d'un film protecteur conducteur pour protéger un substrat, un film protecteur de carbone sous forme de diamant amorphe conducteur contenant une quantité prédéterminée de bore étant formé sur le substrat à l'aide d'un gaz mixte contenant un gaz de matière brute d'hydrocarbure et un gaz de dopage au bore dans un rapport prédéterminé. Il est préférable qu'un ou plusieurs éléments choisis dans le groupe constitué par le borate de triméthyle, le triméthyle bore et le triéthyle bore soient utilisés en tant que gaz de dopage au bore.
PCT/JP2008/057466 2007-04-20 2008-04-17 Film protecteur conducteur et son procédé de fabrication Ceased WO2008133156A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020087031185A KR101485139B1 (ko) 2007-04-20 2008-04-17 도전성 보호막 및 그의 제조방법
JP2009511836A JP5295102B2 (ja) 2007-04-20 2008-04-17 導電性保護膜及びその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007111769 2007-04-20
JP2007-111769 2007-04-20

Publications (1)

Publication Number Publication Date
WO2008133156A1 true WO2008133156A1 (fr) 2008-11-06

Family

ID=39925612

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/057466 Ceased WO2008133156A1 (fr) 2007-04-20 2008-04-17 Film protecteur conducteur et son procédé de fabrication

Country Status (4)

Country Link
JP (1) JP5295102B2 (fr)
KR (1) KR101485139B1 (fr)
TW (1) TWI460295B (fr)
WO (1) WO2008133156A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101111410B1 (ko) 2009-08-31 2012-02-15 재단법인대구경북과학기술원 하드 코팅액 및 하드 코팅 필름
WO2012073869A1 (fr) * 2010-11-30 2012-06-07 株式会社野村鍍金 Film conducteur en carbone dur et son procédé de formation
WO2015064019A1 (fr) * 2013-10-28 2015-05-07 日本軽金属株式会社 Élément pourvu d'un film de revêtement protecteur électroconducteur et procédé de fabrication de ce dernier
JP2015193913A (ja) * 2014-03-27 2015-11-05 日立金属株式会社 被覆工具の製造方法
WO2016171247A1 (fr) * 2015-04-22 2016-10-27 東洋炭素株式会社 Source d'évaporation de carbone

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101151252B1 (ko) * 2010-03-10 2012-06-14 한국생산기술연구원 Ｄｌｃ 코팅에 의한 내마모성 전도체 및 그 제조방법
JP5754239B2 (ja) * 2011-05-24 2015-07-29 ソニー株式会社 半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07268607A (ja) * 1994-03-31 1995-10-17 Tdk Corp ダイヤモンドライクカーボン薄膜を有する物品およびその製造方法
JP2004137541A (ja) * 2002-10-17 2004-05-13 Tigold Co Ltd Ｄｌｃ傾斜構造硬質被膜及びその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5635258A (en) * 1995-04-03 1997-06-03 National Science Council Method of forming a boron-doped diamond film by chemical vapor deposition
US20060145398A1 (en) * 2004-12-30 2006-07-06 Board Of Regents, The University Of Texas System Release layer comprising diamond-like carbon (DLC) or doped DLC with tunable composition for imprint lithography templates and contact masks

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07268607A (ja) * 1994-03-31 1995-10-17 Tdk Corp ダイヤモンドライクカーボン薄膜を有する物品およびその製造方法
JP2004137541A (ja) * 2002-10-17 2004-05-13 Tigold Co Ltd Ｄｌｃ傾斜構造硬質被膜及びその製造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
KAMIMURA K. ET AL.: "Ion-ka Jochakuho ni yoru Boron Doped DLC Usumaku no Sakusei", EXTENDED ABSTRACTS; THE JAPAN SOCIETY OF APPLIED PHYSICS, 7 September 2005 (2005-09-07), pages 485 + ABSTR. NO 7A-P1-6 *
NAMIKI K. ET AL.: "Ion-ka Jochakuho ni yoru DLC Taiyo Denchi no Sakusei - Hoso Kongohi no Tokusei -", NIHON UNIVERSITY RIKOGAKUBU GAKUJUTSU KOENKAI RONBUNSHU DENKIKEI BUKAI, 16 November 2005 (2005-11-16), pages 1092 - 1093 *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101111410B1 (ko) 2009-08-31 2012-02-15 재단법인대구경북과학기술원 하드 코팅액 및 하드 코팅 필름
WO2012073869A1 (fr) * 2010-11-30 2012-06-07 株式会社野村鍍金 Film conducteur en carbone dur et son procédé de formation
US9183965B2 (en) 2010-11-30 2015-11-10 Nomura Plating Co., Ltd. Conductive hard carbon film and method for forming the same
JP6116910B2 (ja) * 2010-11-30 2017-04-19 株式会社野村鍍金 導電性硬質炭素膜及びその成膜方法
WO2015064019A1 (fr) * 2013-10-28 2015-05-07 日本軽金属株式会社 Élément pourvu d'un film de revêtement protecteur électroconducteur et procédé de fabrication de ce dernier
JP2015086406A (ja) * 2013-10-28 2015-05-07 日本軽金属株式会社 導電性保護被膜を有する部材及びその製造方法
JP2015193913A (ja) * 2014-03-27 2015-11-05 日立金属株式会社 被覆工具の製造方法
WO2016171247A1 (fr) * 2015-04-22 2016-10-27 東洋炭素株式会社 Source d'évaporation de carbone

Also Published As

Publication number Publication date
TWI460295B (zh) 2014-11-11
JP5295102B2 (ja) 2013-09-18
JPWO2008133156A1 (ja) 2010-07-22
KR20100014082A (ko) 2010-02-10
KR101485139B1 (ko) 2015-01-22
TW200912017A (en) 2009-03-16

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