[go: up one dir, main page]

WO2008129914A1 - Pièce à masque euv - Google Patents

Pièce à masque euv Download PDF

Info

Publication number
WO2008129914A1
WO2008129914A1 PCT/JP2008/054808 JP2008054808W WO2008129914A1 WO 2008129914 A1 WO2008129914 A1 WO 2008129914A1 JP 2008054808 W JP2008054808 W JP 2008054808W WO 2008129914 A1 WO2008129914 A1 WO 2008129914A1
Authority
WO
WIPO (PCT)
Prior art keywords
mask blank
substrate
sphere
euv mask
formation surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/054808
Other languages
English (en)
Japanese (ja)
Inventor
Yoshiaki Ikuta
Ken Ebihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to JP2009510806A priority Critical patent/JP5327046B2/ja
Publication of WO2008129914A1 publication Critical patent/WO2008129914A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

L'invention concerne une pièce à masque EUV qui permet un repérage précis de la position de minuscules défauts d'un diamètre équivalent à une sphère de 30 nm ; et un substrat de pièce à masque correspondant et un substrat avec un film fonctionnel. Il est proposé un substrat pour une pièce à masque réfléchissant pour une lithographie EUV, caractérisé en ce qu'au moins trois marques formées sur une surface de formation de film du substrat satisfont les spécifications suivantes : (1) une taille de marque ayant un diamètre équivalent à une sphère allant de 30 à 100 nm, et (2) sur la surface de formation de film, trois marques ne se trouvant pas sur la même droite virtuelle.
PCT/JP2008/054808 2007-04-17 2008-03-14 Pièce à masque euv Ceased WO2008129914A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009510806A JP5327046B2 (ja) 2007-04-17 2008-03-14 Ｅｕｖマスクブランク

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-108060 2007-04-17
JP2007108060 2007-04-17

Publications (1)

Publication Number Publication Date
WO2008129914A1 true WO2008129914A1 (fr) 2008-10-30

Family

ID=39875443

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/054808 Ceased WO2008129914A1 (fr) 2007-04-17 2008-03-14 Pièce à masque euv

Country Status (3)

Country Link
JP (1) JP5327046B2 (fr)
TW (1) TWI446405B (fr)
WO (1) WO2008129914A1 (fr)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009210802A (ja) * 2008-03-04 2009-09-17 Asahi Glass Co Ltd Ｅｕｖリソグラフィ用反射型マスクブランク
WO2010061725A1 (fr) * 2008-11-27 2010-06-03 Hoya株式会社 Substrat avec pellicule de réflexion multicouche, ébauche de masque réfléchissant et procédé de fabrication de l’ébauche de masque réfléchissant
WO2012121159A1 (fr) * 2011-03-07 2012-09-13 旭硝子株式会社 Substrat multicouche, procédé de fabrication pour substrat multicouche, et procédé de contrôle de qualité pour substrat multicouche
WO2013031863A1 (fr) * 2011-09-01 2013-03-07 旭硝子株式会社 Ébauche de masque réfléchissant, procédé de fabrication d'une ébauche de masque réfléchissant et procédé permettant de procéder au contrôle de la qualité d'une ébauche de masque réfléchissant
WO2013118716A1 (fr) * 2012-02-10 2013-08-15 Hoya株式会社 Substrat présentant une pellicule de réflexion multicouche, une ébauche de masque réfléchissant, une ébauche de masque, procédé de fabrication de celle-ci, d'un masque réfléchissant, et d'un masque
US8512918B2 (en) 2009-03-26 2013-08-20 Hoya Corporation Multilayer reflective film coated substrate for a reflective mask, reflective mask blank, and methods of manufacturing the same
JP2013219339A (ja) * 2012-03-12 2013-10-24 Hoya Corp 反射型マスクブランク及び反射型マスクの製造方法、並びにマスクブランク及びマスクの製造方法
WO2014050891A1 (fr) * 2012-09-28 2014-04-03 旭硝子株式会社 Ébauche de masque réfléchissant destinée à une lithographie par ultraviolets extrêmes et son procédé de fabrication, et masque réfléchissant destiné à une lithographie par ultraviolets extrêmes et son procédé de fabrication
WO2014129527A1 (fr) * 2013-02-22 2014-08-28 Hoya株式会社 Procédé de fabrication de blanc de masque réfléchissant, et procédé de fabrication de masque réfléchissant
KR20140138595A (ko) 2012-03-28 2014-12-04 호야 가부시키가이샤 다층 반사막 부착 기판의 제조 방법, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법
US9195131B2 (en) 2011-09-28 2015-11-24 Hoya Corporation Mask blank glass substrate, multilayer reflective film coated substrate, mask blank, mask, and methods of manufacturing the same
JP2016188911A (ja) * 2015-03-30 2016-11-04 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びにそれらの製造方法
JP2017039620A (ja) * 2015-08-19 2017-02-23 旭硝子株式会社 マスクブランクス用ガラス基板
JP2017075997A (ja) * 2015-10-13 2017-04-20 旭硝子株式会社 反射型マスクブランク、及び反射型マスクブランクの製造方法
TWI587077B (zh) * 2012-03-07 2017-06-11 尼康股份有限公司 光罩、光罩單元、曝光裝置、基板處理裝置、及元件製造方法
WO2017169973A1 (fr) * 2016-03-31 2017-10-05 Hoya株式会社 Procédé de fabrication d'ébauche de masque réfléchissant, ébauche de masque réfléchissant, procédé de fabrication de masque réfléchissant, masque réfléchissant, et procédé de fabrication de dispositif à semi-conducteurs
US9927693B2 (en) 2015-09-17 2018-03-27 Asahi Glass Company, Limited Reflective mask blank and process for producing the reflective mask blank
WO2020095959A1 (fr) * 2018-11-07 2020-05-14 Hoya株式会社 Substrat à film réfléchissant multicouche, ébauche de masque réfléchissant, procédé de production de masque réfléchissant, et procédé de production de dispositif semi-conducteur

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6106413B2 (ja) * 2012-11-13 2017-03-29 Hoya株式会社 反射型マスクブランク及び反射型マスクの製造方法
JP6114009B2 (ja) * 2012-11-13 2017-04-12 Hoya株式会社 反射型マスクブランク及び反射型マスクの製造方法
JP6147514B2 (ja) * 2013-01-31 2017-06-14 Hoya株式会社 マスクブランク用基板の製造方法、多層反射膜付き基板の製造方法、マスクブランクの製造方法、および転写用マスクの製造方法
JP6282844B2 (ja) * 2013-11-06 2018-02-21 Hoya株式会社 薄膜付き基板及び転写用マスクの製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003248299A (ja) * 2002-02-26 2003-09-05 Toshiba Corp マスク基板およびその製造方法
JP2004039884A (ja) * 2002-07-04 2004-02-05 Hoya Corp 反射型マスクブランクス及び反射型マスク並びに反射型マスクの製造方法
JP2004170948A (ja) * 2002-10-30 2004-06-17 Nikon Corp パターン転写用マスク、マスク作製方法及び露光方法
JP2005241688A (ja) * 2004-02-24 2005-09-08 Toppan Printing Co Ltd フォトマスクの描画方法
JP2005276997A (ja) * 2004-03-24 2005-10-06 Nec Electronics Corp ホールパターンの形成方法
JP2006332153A (ja) * 2005-05-24 2006-12-07 Hoya Corp 反射型マスクブランク及び反射型マスク並びに半導体装置の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000029202A (ja) * 1998-07-15 2000-01-28 Nikon Corp マスクの製造方法
JP4397496B2 (ja) * 2000-02-25 2010-01-13 Ｏｋｉセミコンダクタ株式会社 反射型露光マスクおよびｅｕｖ露光装置
JP2004193269A (ja) * 2002-12-10 2004-07-08 Hitachi Ltd マスクの製造方法および半導体集積回路装置の製造方法
JP4157486B2 (ja) * 2004-03-24 2008-10-01 株式会社東芝 描画パターンデータの生成方法及びマスクの描画方法
JP2006113221A (ja) * 2004-10-14 2006-04-27 Renesas Technology Corp マスクの修正方法
KR101663842B1 (ko) * 2008-11-27 2016-10-07 호야 가부시키가이샤 다층 반사막을 가진 기판 및 반사형 마스크 블랭크 및 반사형 마스크의 제조 방법

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003248299A (ja) * 2002-02-26 2003-09-05 Toshiba Corp マスク基板およびその製造方法
JP2004039884A (ja) * 2002-07-04 2004-02-05 Hoya Corp 反射型マスクブランクス及び反射型マスク並びに反射型マスクの製造方法
JP2004170948A (ja) * 2002-10-30 2004-06-17 Nikon Corp パターン転写用マスク、マスク作製方法及び露光方法
JP2005241688A (ja) * 2004-02-24 2005-09-08 Toppan Printing Co Ltd フォトマスクの描画方法
JP2005276997A (ja) * 2004-03-24 2005-10-06 Nec Electronics Corp ホールパターンの形成方法
JP2006332153A (ja) * 2005-05-24 2006-12-07 Hoya Corp 反射型マスクブランク及び反射型マスク並びに半導体装置の製造方法

Cited By (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009210802A (ja) * 2008-03-04 2009-09-17 Asahi Glass Co Ltd Ｅｕｖリソグラフィ用反射型マスクブランク
WO2010061725A1 (fr) * 2008-11-27 2010-06-03 Hoya株式会社 Substrat avec pellicule de réflexion multicouche, ébauche de masque réfléchissant et procédé de fabrication de l’ébauche de masque réfléchissant
KR20110088492A (ko) * 2008-11-27 2011-08-03 호야 가부시키가이샤 다층 반사막을 가진 기판 및 반사형 마스크 블랭크 및 반사형 마스크의 제조 방법
US8399160B2 (en) 2008-11-27 2013-03-19 Hoya Corporation Multilayer reflective film coated substrate, reflective mask blank, and method of manufacturing a reflective mask
JP5279840B2 (ja) * 2008-11-27 2013-09-04 Ｈｏｙａ株式会社 多層反射膜付基板及び反射型マスクブランク並びに反射型マスクの製造方法
KR101663842B1 (ko) * 2008-11-27 2016-10-07 호야 가부시키가이샤 다층 반사막을 가진 기판 및 반사형 마스크 블랭크 및 반사형 마스크의 제조 방법
US8512918B2 (en) 2009-03-26 2013-08-20 Hoya Corporation Multilayer reflective film coated substrate for a reflective mask, reflective mask blank, and methods of manufacturing the same
JP5910625B2 (ja) * 2011-03-07 2016-04-27 旭硝子株式会社 多層基板、多層基板の製造方法、多層基板の品質管理方法
WO2012121159A1 (fr) * 2011-03-07 2012-09-13 旭硝子株式会社 Substrat multicouche, procédé de fabrication pour substrat multicouche, et procédé de contrôle de qualité pour substrat multicouche
US8921017B2 (en) 2011-03-07 2014-12-30 Asahi Glass Company, Limited Multilayer substrate, manufacturing method for multilayer substrate, and quality control method for multilayer substrate
TWI569089B (zh) * 2011-03-07 2017-02-01 Asahi Glass Co Ltd Multi-layer substrate, multi-layer substrate manufacturing method, multi-layer substrate quality management methods
WO2013031863A1 (fr) * 2011-09-01 2013-03-07 旭硝子株式会社 Ébauche de masque réfléchissant, procédé de fabrication d'une ébauche de masque réfléchissant et procédé permettant de procéder au contrôle de la qualité d'une ébauche de masque réfléchissant
KR20140068912A (ko) * 2011-09-01 2014-06-09 아사히 가라스 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크 블랭크의 제조 방법, 및 반사형 마스크 블랭크의 품질 관리 방법
KR101908168B1 (ko) * 2011-09-01 2018-10-15 에이지씨 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크 블랭크의 제조 방법, 및 반사형 마스크 블랭크의 품질 관리 방법
TWI585508B (zh) * 2011-09-01 2017-06-01 Asahi Glass Co Ltd A reflective mask substrate and a reflective mask base
US8916316B2 (en) 2011-09-01 2014-12-23 Asahi Glass Company, Limited Reflecting mask blank, method for manufacturing reflective mask blank and method for quality control for reflective mask blank
JPWO2013031863A1 (ja) * 2011-09-01 2015-03-23 旭硝子株式会社 反射型マスクブランク、反射型マスクブランクの製造方法、及び反射型マスクブランクの品質管理方法
US9488904B2 (en) 2011-09-28 2016-11-08 Hoya Corporation Mask blank glass substrate, multilayer reflective film coated substrate, mask blank, mask, and methods of manufacturing the same
US9195131B2 (en) 2011-09-28 2015-11-24 Hoya Corporation Mask blank glass substrate, multilayer reflective film coated substrate, mask blank, mask, and methods of manufacturing the same
KR20140121812A (ko) * 2012-02-10 2014-10-16 호야 가부시키가이샤 다층 반사막 부착 기판, 반사형 마스크 블랭크, 마스크 블랭크 및 그들의 제조방법, 반사형 마스크 그리고 마스크
KR102207990B1 (ko) * 2012-02-10 2021-01-26 호야 가부시키가이샤 다층 반사막 부착 기판, 반사형 마스크 블랭크, 마스크 블랭크 및 그들의 제조방법, 반사형 마스크 그리고 마스크
US10126641B2 (en) 2012-02-10 2018-11-13 Hoya Corporation Multilayer reflective film formed substrate, reflective mask blank, mask blank, methods of manufacturing the same, reflective mask, and mask
KR20210010669A (ko) * 2012-02-10 2021-01-27 호야 가부시키가이샤 다층 반사막 부착 기판, 반사형 마스크 블랭크, 마스크 블랭크 및 그들의 제조방법, 반사형 마스크 그리고 마스크
KR102304805B1 (ko) * 2012-02-10 2021-09-24 호야 가부시키가이샤 다층 반사막 부착 기판, 반사형 마스크 블랭크, 마스크 블랭크 및 그들의 제조방법, 반사형 마스크 그리고 마스크
US9423685B2 (en) 2012-02-10 2016-08-23 Hoya Corporation Multilayer reflective film formed substrate, reflective mask blank, mask blank, methods of manufacturing the same, reflective mask, and mask
JP2013179270A (ja) * 2012-02-10 2013-09-09 Hoya Corp 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、マスクブランク及びマスク、多層反射膜付き基板の製造方法、反射型マスクブランクの製造方法、並びにマスクブランクの製造方法
WO2013118716A1 (fr) * 2012-02-10 2013-08-15 Hoya株式会社 Substrat présentant une pellicule de réflexion multicouche, une ébauche de masque réfléchissant, une ébauche de masque, procédé de fabrication de celle-ci, d'un masque réfléchissant, et d'un masque
TWI587077B (zh) * 2012-03-07 2017-06-11 尼康股份有限公司 光罩、光罩單元、曝光裝置、基板處理裝置、及元件製造方法
JP2013219339A (ja) * 2012-03-12 2013-10-24 Hoya Corp 反射型マスクブランク及び反射型マスクの製造方法、並びにマスクブランク及びマスクの製造方法
KR20140138595A (ko) 2012-03-28 2014-12-04 호야 가부시키가이샤 다층 반사막 부착 기판의 제조 방법, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법
US9323141B2 (en) 2012-03-28 2016-04-26 Hoya Corporation Method for producing substrate with multilayer reflective film, method for producing reflective mask blank and method for producing reflective mask
US9229316B2 (en) 2012-03-28 2016-01-05 Hoya Corporation Method for producing substrate with multilayer reflective film, method for producing reflective mask blank and method for producing reflective mask
WO2014050891A1 (fr) * 2012-09-28 2014-04-03 旭硝子株式会社 Ébauche de masque réfléchissant destinée à une lithographie par ultraviolets extrêmes et son procédé de fabrication, et masque réfléchissant destiné à une lithographie par ultraviolets extrêmes et son procédé de fabrication
US9268207B2 (en) 2012-09-28 2016-02-23 Asahi Glass Company, Limited Reflective mask blank for EUV lithography, method of manufacturing thereof, reflective mask for EUV lithography and method of manufacturing thereof
US10067419B2 (en) 2013-02-22 2018-09-04 Hoya Corporation Method for manufacturing reflective mask blank, and method for manufacturing reflective mask
KR102330533B1 (ko) * 2013-02-22 2021-11-24 호야 가부시키가이샤 반사형 마스크블랭크의 제조방법, 및 반사형 마스크의 제조방법
TWI628695B (zh) * 2013-02-22 2018-07-01 Ｈｏｙａ股份有限公司 Method for manufacturing reflective mask base and method for manufacturing reflective mask
KR20210021141A (ko) * 2013-02-22 2021-02-24 호야 가부시키가이샤 반사형 마스크블랭크의 제조방법, 및 반사형 마스크의 제조방법
US11131921B2 (en) 2013-02-22 2021-09-28 Hoya Corporation Method for manufacturing reflective mask blank, and method for manufacturing reflective mask
JPWO2014129527A1 (ja) * 2013-02-22 2017-02-02 Hoya株式会社 反射型マスクブランクの製造方法、及び反射型マスクの製造方法
KR20150120419A (ko) * 2013-02-22 2015-10-27 호야 가부시키가이샤 반사형 마스크블랭크의 제조방법, 및 반사형 마스크의 제조방법
WO2014129527A1 (fr) * 2013-02-22 2014-08-28 Hoya株式会社 Procédé de fabrication de blanc de masque réfléchissant, et procédé de fabrication de masque réfléchissant
KR102219307B1 (ko) * 2013-02-22 2021-02-23 호야 가부시키가이샤 반사형 마스크블랭크의 제조방법, 및 반사형 마스크의 제조방법
JP2016188911A (ja) * 2015-03-30 2016-11-04 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びにそれらの製造方法
JP2017039620A (ja) * 2015-08-19 2017-02-23 旭硝子株式会社 マスクブランクス用ガラス基板
US9927693B2 (en) 2015-09-17 2018-03-27 Asahi Glass Company, Limited Reflective mask blank and process for producing the reflective mask blank
JP2017075997A (ja) * 2015-10-13 2017-04-20 旭硝子株式会社 反射型マスクブランク、及び反射型マスクブランクの製造方法
JPWO2017169973A1 (ja) * 2016-03-31 2019-03-14 Hoya株式会社 反射型マスクブランクの製造方法、反射型マスクブランク、反射型マスクの製造方法、反射型マスク、及び半導体装置の製造方法
US11048159B2 (en) 2016-03-31 2021-06-29 Hoya Corporation Method for manufacturing reflective mask blank, reflective mask blank, method for manufacturing reflective mask, reflective mask, and method for manufacturing semiconductor device
KR20180130495A (ko) 2016-03-31 2018-12-07 호야 가부시키가이샤 반사형 마스크 블랭크의 제조 방법, 반사형 마스크 블랭크, 반사형 마스크의 제조 방법, 반사형 마스크, 및 반도체 장치의 제조 방법
WO2017169973A1 (fr) * 2016-03-31 2017-10-05 Hoya株式会社 Procédé de fabrication d'ébauche de masque réfléchissant, ébauche de masque réfléchissant, procédé de fabrication de masque réfléchissant, masque réfléchissant, et procédé de fabrication de dispositif à semi-conducteurs
KR20220065071A (ko) 2016-03-31 2022-05-19 호야 가부시키가이샤 반사형 마스크 블랭크의 제조 방법, 반사형 마스크 블랭크, 반사형 마스크의 제조 방법, 반사형 마스크, 및 반도체 장치의 제조 방법
US11852964B2 (en) 2016-03-31 2023-12-26 Hoya Corporation Method for manufacturing reflective mask blank, reflective mask blank, method for manufacturing reflective mask, reflective mask, and method for manufacturing semiconductor device
WO2020095959A1 (fr) * 2018-11-07 2020-05-14 Hoya株式会社 Substrat à film réfléchissant multicouche, ébauche de masque réfléchissant, procédé de production de masque réfléchissant, et procédé de production de dispositif semi-conducteur
JPWO2020095959A1 (ja) * 2018-11-07 2021-10-07 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法
JP7492456B2 (ja) 2018-11-07 2024-05-29 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法

Also Published As

Publication number Publication date
JPWO2008129914A1 (ja) 2010-07-22
TWI446405B (zh) 2014-07-21
TW200849332A (en) 2008-12-16
JP5327046B2 (ja) 2013-10-30

Similar Documents

Publication Publication Date Title
WO2008129914A1 (fr) Pièce à masque euv
ATE533084T1 (de) Stubstrat mit reflektierenden schichten geeignet zur herstellung von reflexionsmaskenrohlingen für die euv-lithographie
WO2008084680A1 (fr) Ébauche de masque réfléchissant pour une lithographie aux ultraviolets extrêmes
EP2881790A3 (fr) Ébauche de photomasque
EP2568335A3 (fr) Ébauche de masque photographique, masque photographique et procédé de fabrication.
EP1801647A4 (fr) Ébauche pour photomasque et photomasque
EP1767344A3 (fr) Recouvrement parafoudre pour une surface étendue
WO2006024908A3 (fr) Appareil lithographique d'impression, procede de fabrication d'un dispositif et dispositif fabrique par ce procede
JP2013179270A5 (fr)
TW200801788A (en) Resist underlayer coating forming composition for mask blank, mask blank and mask
JP2009042753A5 (fr)
TW200625407A (en) Method for foring a finely patterned resist
JP2010039352A5 (fr)
ATE546759T1 (de) Reflexionsmaskenrohling für euv-lithographie
TW200736819A (en) Four-gradation photomask manufacturing method and photomask blank for use therein
TW200741376A (en) Dynamic compensation system for maskless lithography
WO2009147602A3 (fr) Materiau de type caoutchouc de silicone pour lithographie molle
WO2009035007A1 (fr) Motif en couche mince d'oxyde de vanadium et son procédé de fabrication
TW200746470A (en) Luminescence element
TW200720837A (en) Photomask blank and process for producing the same, process for producing photomask, and process for producing semiconductor device
JP2019537271A5 (fr)
TW200737300A (en) Reflexible photo-mask blank, manufacturing method thereof, reflexible photomask, and manufacturing method of semiconductor apparatus
WO2012040699A3 (fr) Repères d'alignement à contraste élevé créés par impression en plusieurs passes
EP2015142A3 (fr) Compositions de toner
EP1176466A4 (fr) Photomasque de similigravure a decalage de phase et plaques pour la fabrication de photomasque de similigravure a decalage de phase

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08722204

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2009510806

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08722204

Country of ref document: EP

Kind code of ref document: A1