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WO2008129738A1 - パターン形成方法および電子素子の製造方法 - Google Patents

パターン形成方法および電子素子の製造方法 Download PDF

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Publication number
WO2008129738A1
WO2008129738A1 PCT/JP2007/074694 JP2007074694W WO2008129738A1 WO 2008129738 A1 WO2008129738 A1 WO 2008129738A1 JP 2007074694 W JP2007074694 W JP 2007074694W WO 2008129738 A1 WO2008129738 A1 WO 2008129738A1
Authority
WO
WIPO (PCT)
Prior art keywords
plate
pattern
liquid composition
conductive
electronic element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/074694
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English (en)
French (fr)
Inventor
Toshio Fukuda
Akihiro Nomoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to US12/593,841 priority Critical patent/US8048725B2/en
Priority to CN2007800524382A priority patent/CN101641769B/zh
Publication of WO2008129738A1 publication Critical patent/WO2008129738A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
    • H05K3/046—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
    • H05K3/207—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern using a prefabricated paste pattern, ink pattern or powder pattern
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/011—Division of wafers or substrates to produce devices, each consisting of a single electric circuit element
    • H10D89/015—Division of wafers or substrates to produce devices, each consisting of a single electric circuit element the wafers or substrates being other than semiconductor bodies, e.g. insulating bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/01—Tools for processing; Objects used during processing
    • H05K2203/0104—Tools for processing; Objects used during processing for patterning or coating
    • H05K2203/0108—Male die used for patterning, punching or transferring
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05—Patterning and lithography; Masks; Details of resist
    • H05K2203/0502—Patterning and lithography
    • H05K2203/0528—Patterning during transfer, i.e. without preformed pattern, e.g. by using a die, a programmed tool or a laser
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0779—Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
    • H05K2203/0783—Using solvent, e.g. for cleaning; Regulating solvent content of pastes or coatings for adjusting the viscosity
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1105—Heating or thermal processing not related to soldering, firing, curing or laminating, e.g. for shaping the substrate or during finish plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Thin Film Transistor (AREA)
  • Printing Methods (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

　第１版（１０）上に液組成物を塗布することで、導電性膜（Ｄ）を形成するとともに、第１版（１０）を加熱する第１工程と、表面側に凹凸パターン形状を有する第２版（２０）を、第１版（１０）の導電性膜（Ｄ）の形成面側に押圧し、第２版（２０）の凸部（２０ａ）の頂面に、導電性膜（Ｄ）の不要なパターンを転写して除去することで、第１版（１０）上に導電性パターン（Ｄ’）を形成する第２工程と、第１版（１０）の導電性パターン（Ｄ’）の形成面側を、被転写基板（３０）の表面に押圧することで、被転写基板（３０）の表面に導電性パターン（Ｄ’）を転写する第３工程とを有し、上記液組成物は、加熱された第１版（１０）の表面温度において１３３Ｐａ以下の蒸気圧を示す溶媒を含有してなることを特徴とするパターン形成方法および電子素子の製造方法により、液組成物塗膜の状態を安定させて、微細で精密なパターンを再現性よく安定して形成することが可能なパターン形成方法および電子素子の製造方法を提供する。
PCT/JP2007/074694 2007-03-30 2007-12-21 パターン形成方法および電子素子の製造方法 Ceased WO2008129738A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/593,841 US8048725B2 (en) 2007-03-30 2007-12-21 Method of forming pattern and method of producing electronic element
CN2007800524382A CN101641769B (zh) 2007-03-30 2007-12-21 形成图案的方法以及制造电子元件的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-092179 2007-03-30
JP2007092179A JP2008251888A (ja) 2007-03-30 2007-03-30 パターン形成方法および電子素子の製造方法

Publications (1)

Publication Number Publication Date
WO2008129738A1 true WO2008129738A1 (ja) 2008-10-30

Family

ID=39875276

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/074694 Ceased WO2008129738A1 (ja) 2007-03-30 2007-12-21 パターン形成方法および電子素子の製造方法

Country Status (6)

Country Link
US (1) US8048725B2 (ja)
JP (1) JP2008251888A (ja)
KR (1) KR20090127147A (ja)
CN (1) CN101641769B (ja)
TW (1) TW200845445A (ja)
WO (1) WO2008129738A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019225271A1 (ja) * 2018-05-23 2019-11-28 株式会社ダイセル 導電性インク

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010171165A (ja) * 2009-01-22 2010-08-05 Sony Corp 有機半導体装置およびその製造方法
JP2010219447A (ja) * 2009-03-18 2010-09-30 Toppan Printing Co Ltd 有機トランジスタ用インク、有機トランジスタの電極及びその形成方法並びに有機トランジスタ
KR101093075B1 (ko) * 2011-04-04 2011-12-13 한국기계연구원 패턴 인쇄 장치
CN102522361A (zh) * 2011-12-19 2012-06-27 清华大学 一种无机柔性电子器件系统集成方法
CN104321126B (zh) * 2012-03-27 2017-02-22 加利福尼亚大学董事会 连续的整体芯片三维dep细胞分选器及相关制造方法
CN106926559B (zh) * 2017-03-24 2020-05-26 京东方科技集团股份有限公司 转印基板及其制作方法、oled器件制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001225593A (ja) * 2000-02-14 2001-08-21 Dainippon Printing Co Ltd 曲面印刷用転写フィルムおよびその製造方法
JP2005246790A (ja) * 2004-03-04 2005-09-15 Hitachi Chem Co Ltd レジストパターン形成法、電子部品の製造法、および電子部品
JP2006045294A (ja) * 2004-08-02 2006-02-16 Hitachi Chem Co Ltd 印刷インキ組成物、塗膜及びその形成方法、並びに、電子部品及びその製造方法
JP2006156426A (ja) * 2004-11-25 2006-06-15 Seiko Epson Corp 導電性パターンの形成方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3689536B2 (ja) 1997-08-12 2005-08-31 光村印刷株式会社 画像形成法
JP3614152B2 (ja) * 2001-08-07 2005-01-26 株式会社村田製作所 感光性導電ペースト、それを用いた回路基板及びセラミック多層基板の製造方法
JP2004161960A (ja) * 2002-11-15 2004-06-10 Brother Ind Ltd 導電性インク
JP4532840B2 (ja) * 2003-03-04 2010-08-25 新潟県 金属ペースト
JP2004342650A (ja) * 2003-05-13 2004-12-02 Ricoh Co Ltd 配線形成方法及び配線形成装置
JP4549651B2 (ja) 2003-10-24 2010-09-22 光村印刷株式会社 カラーフィルター作製用インキ組成物
JP2006269476A (ja) * 2005-03-22 2006-10-05 Toppan Printing Co Ltd 薄膜トランジスタの製造方法
KR100634327B1 (ko) * 2005-04-13 2006-10-13 한국기계연구원 롤-투-롤 윤전인쇄방식을 이용한 전자소자의 제조방법 및그 제조장치
JP2007005445A (ja) * 2005-06-22 2007-01-11 Toppan Printing Co Ltd 半導体装置の電極回路の形成方法、および、それに用いる除去版
JP4506605B2 (ja) * 2005-07-28 2010-07-21 ソニー株式会社 半導体装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001225593A (ja) * 2000-02-14 2001-08-21 Dainippon Printing Co Ltd 曲面印刷用転写フィルムおよびその製造方法
JP2005246790A (ja) * 2004-03-04 2005-09-15 Hitachi Chem Co Ltd レジストパターン形成法、電子部品の製造法、および電子部品
JP2006045294A (ja) * 2004-08-02 2006-02-16 Hitachi Chem Co Ltd 印刷インキ組成物、塗膜及びその形成方法、並びに、電子部品及びその製造方法
JP2006156426A (ja) * 2004-11-25 2006-06-15 Seiko Epson Corp 導電性パターンの形成方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019225271A1 (ja) * 2018-05-23 2019-11-28 株式会社ダイセル 導電性インク
JPWO2019225271A1 (ja) * 2018-05-23 2021-06-17 株式会社ダイセル 導電性インク

Also Published As

Publication number Publication date
CN101641769B (zh) 2011-06-08
TW200845445A (en) 2008-11-16
US8048725B2 (en) 2011-11-01
US20100221413A1 (en) 2010-09-02
CN101641769A (zh) 2010-02-03
TWI375341B (ja) 2012-10-21
JP2008251888A (ja) 2008-10-16
KR20090127147A (ko) 2009-12-09

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