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WO2008123060A1 - 真空処理装置 - Google Patents

真空処理装置 Download PDF

Info

Publication number
WO2008123060A1
WO2008123060A1 PCT/JP2008/054949 JP2008054949W WO2008123060A1 WO 2008123060 A1 WO2008123060 A1 WO 2008123060A1 JP 2008054949 W JP2008054949 W JP 2008054949W WO 2008123060 A1 WO2008123060 A1 WO 2008123060A1
Authority
WO
WIPO (PCT)
Prior art keywords
vacuum processing
processing apparatus
processing chamber
space
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/054949
Other languages
English (en)
French (fr)
Inventor
Hiroshi Nogami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Canon Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Priority to JP2009509031A priority Critical patent/JP4418027B2/ja
Publication of WO2008123060A1 publication Critical patent/WO2008123060A1/ja
Priority to US12/566,205 priority patent/US7780790B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32587—Triode systems

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

真空処理容器の内部に複数の貫通孔を有する導電性の隔壁部を設け、真空処理容器の内部空間が、隔壁部に対して対向電極となるように高周波電極が配置されたプラズマ生成空間と、基板が配置された基板処理空間と、に隔離して構成されている真空処理装置は、真空処理容器の側壁部にプラズマ生成空間と連通しているガス溜り部と、ガス溜り部と接続し、ガス溜り部にガスを導入するガス導入系と、を備える。
PCT/JP2008/054949 2007-03-28 2008-03-18 真空処理装置 Ceased WO2008123060A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009509031A JP4418027B2 (ja) 2007-03-28 2008-03-18 真空処理装置
US12/566,205 US7780790B2 (en) 2007-03-28 2009-09-24 Vacuum processing apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007083298 2007-03-28
JP2007-083298 2007-03-28

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/566,205 Continuation US7780790B2 (en) 2007-03-28 2009-09-24 Vacuum processing apparatus

Publications (1)

Publication Number Publication Date
WO2008123060A1 true WO2008123060A1 (ja) 2008-10-16

Family

ID=39830561

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/054949 Ceased WO2008123060A1 (ja) 2007-03-28 2008-03-18 真空処理装置

Country Status (4)

Country Link
US (1) US7780790B2 (ja)
JP (1) JP4418027B2 (ja)
TW (1) TW200905775A (ja)
WO (1) WO2008123060A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
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JP2021108378A (ja) * 2015-09-04 2021-07-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 周期的かつ選択的な材料の除去及びエッチングのための処理チャンバ

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JP4418027B2 (ja) * 2007-03-28 2010-02-17 キヤノンアネルバ株式会社 真空処理装置
KR100963287B1 (ko) * 2008-02-22 2010-06-11 주식회사 유진테크 기판처리장치 및 기판처리방법
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
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JP7175339B2 (ja) 2015-09-04 2022-11-18 アプライド マテリアルズ インコーポレイテッド 周期的かつ選択的な材料の除去及びエッチングのための処理チャンバ
JP2023027054A (ja) * 2015-09-04 2023-03-01 アプライド マテリアルズ インコーポレイテッド 周期的かつ選択的な材料の除去及びエッチングのための処理チャンバ
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Also Published As

Publication number Publication date
JP4418027B2 (ja) 2010-02-17
JPWO2008123060A1 (ja) 2010-07-15
US20100037821A1 (en) 2010-02-18
TW200905775A (en) 2009-02-01
US7780790B2 (en) 2010-08-24
TWI358780B (ja) 2012-02-21

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