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WO2008120610A1 - 蒸着源ユニット、蒸着装置および蒸着源ユニットの温度調整装置 - Google Patents

蒸着源ユニット、蒸着装置および蒸着源ユニットの温度調整装置 Download PDF

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Publication number
WO2008120610A1
WO2008120610A1 PCT/JP2008/055519 JP2008055519W WO2008120610A1 WO 2008120610 A1 WO2008120610 A1 WO 2008120610A1 JP 2008055519 W JP2008055519 W JP 2008055519W WO 2008120610 A1 WO2008120610 A1 WO 2008120610A1
Authority
WO
WIPO (PCT)
Prior art keywords
deposition source
source unit
deposition
film forming
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/055519
Other languages
English (en)
French (fr)
Inventor
Koyu Hasegawa
Yuji Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2009507472A priority Critical patent/JP5306993B2/ja
Priority to KR1020097021981A priority patent/KR101238793B1/ko
Priority to CN2008800105330A priority patent/CN101646802B/zh
Priority to US12/593,753 priority patent/US20100126417A1/en
Priority to DE112008000803T priority patent/DE112008000803T5/de
Publication of WO2008120610A1 publication Critical patent/WO2008120610A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/811—Controlling the atmosphere during processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

【課題】成膜速度を精度良く制御する。 【解決手段】蒸着装置２０は、蒸着源ユニット１００、気化された成膜材料を輸送する輸送機構２００及び輸送された成膜材料を吹き出す吹き出し機構４００有する。蒸着源ユニット１００は、蒸着源アセンブリＡｓ、ハウジングＨｕ及び水冷ジャケット１５０を有する。蒸着源アセンブリＡｓは、ガス供給機構１０５、ガス導入部１１５及び第１の材料気化室Ｕを一体形成する。アルゴンガスは、ガス供給機構１０５に形成された複数のガス流路１０５ｐから第１の材料気化室Ｕに導入される。ハウジングＨｕのヒータ１２０は、第１の材料気化室Ｕの成膜材料および複数のガス流路１０５ｐを流れるキャリアガスを加熱する。気化された成膜材料は、アルゴンガスにより運ばれる。水冷ジャケット１５０は、ハウジングＨｕの外周面から所定の距離を離して設けられ、蒸着源ユニット１００を冷却する。
PCT/JP2008/055519 2007-03-30 2008-03-25 蒸着源ユニット、蒸着装置および蒸着源ユニットの温度調整装置 Ceased WO2008120610A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009507472A JP5306993B2 (ja) 2007-03-30 2008-03-25 蒸着源ユニット、蒸着装置および蒸着源ユニットの温度調整装置
KR1020097021981A KR101238793B1 (ko) 2007-03-30 2008-03-25 증착원 유닛, 증착 장치 및 증착원 유닛의 온도 조정 장치
CN2008800105330A CN101646802B (zh) 2007-03-30 2008-03-25 蒸镀源单元、蒸镀装置以及蒸镀源单元的温度调整装置
US12/593,753 US20100126417A1 (en) 2007-03-30 2008-03-25 Deposition source unit, deposition apparatus and temperature controller of deposition source unit
DE112008000803T DE112008000803T5 (de) 2007-03-30 2008-03-25 Abscheidungsquelleneinheit, Abscheidungsvorrichtung und Temperatursteuereinrichtung einer Abscheidungsquelleneinheit

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007090538 2007-03-30
JP2007-095242 2007-03-30
JP2007095242 2007-03-30
JP2007-090538 2007-03-30

Publications (1)

Publication Number Publication Date
WO2008120610A1 true WO2008120610A1 (ja) 2008-10-09

Family

ID=39808192

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/055519 Ceased WO2008120610A1 (ja) 2007-03-30 2008-03-25 蒸着源ユニット、蒸着装置および蒸着源ユニットの温度調整装置

Country Status (7)

Country Link
US (1) US20100126417A1 (ja)
JP (1) JP5306993B2 (ja)
KR (1) KR101238793B1 (ja)
CN (1) CN101646802B (ja)
DE (1) DE112008000803T5 (ja)
TW (1) TW200907082A (ja)
WO (1) WO2008120610A1 (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5179739B2 (ja) * 2006-09-27 2013-04-10 東京エレクトロン株式会社 蒸着装置、蒸着装置の制御装置、蒸着装置の制御方法および蒸着装置の使用方法
US8894458B2 (en) * 2010-04-28 2014-11-25 Samsung Display Co., Ltd. Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method
JP2012046780A (ja) * 2010-08-25 2012-03-08 Tokyo Electron Ltd 蒸着処理装置および蒸着処理方法
KR20130010730A (ko) * 2011-07-19 2013-01-29 삼성디스플레이 주식회사 증착 소스 및 이를 구비한 증착 장치
KR20140029529A (ko) * 2011-09-06 2014-03-10 파나소닉 주식회사 인라인형 증착 장치
TWI425105B (zh) * 2011-09-20 2014-02-01 Ind Tech Res Inst 蒸鍍裝置以及蒸鍍機台
KR102096962B1 (ko) * 2013-08-01 2020-04-03 주식회사 선익시스템 진공 챔버의 가스 분사 장치
CN103668083B (zh) * 2013-12-13 2016-10-19 京东方科技集团股份有限公司 冷却装置以及真空蒸镀设备
US11168394B2 (en) 2018-03-14 2021-11-09 CeeVeeTech, LLC Method and apparatus for making a vapor of precise concentration by sublimation
US12104252B2 (en) 2018-03-14 2024-10-01 Ceevee Tech, Llc Method and apparatus for making a vapor of precise concentration by sublimation
CN114351115A (zh) * 2020-10-12 2022-04-15 聚灿光电科技（宿迁）有限公司 气体输运系统及具有其的mocvd设备

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JP2004143521A (ja) * 2002-10-24 2004-05-20 Sony Corp 薄膜形成装置
JP2005060767A (ja) * 2003-08-12 2005-03-10 Sony Corp 薄膜形成装置
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WO2007034790A1 (ja) * 2005-09-20 2007-03-29 Tohoku University 成膜装置、蒸発治具、及び、測定方法

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JP2004143521A (ja) * 2002-10-24 2004-05-20 Sony Corp 薄膜形成装置
JP2005060767A (ja) * 2003-08-12 2005-03-10 Sony Corp 薄膜形成装置
JP2007070679A (ja) * 2005-09-06 2007-03-22 Tohoku Univ 成膜装置、成膜装置系、成膜方法、及び電子機器または有機エレクトロルミネッセンス素子の製造方法
WO2007034790A1 (ja) * 2005-09-20 2007-03-29 Tohoku University 成膜装置、蒸発治具、及び、測定方法

Also Published As

Publication number Publication date
KR20090122398A (ko) 2009-11-27
KR101238793B1 (ko) 2013-03-04
DE112008000803T5 (de) 2010-04-08
TW200907082A (en) 2009-02-16
JP5306993B2 (ja) 2013-10-02
CN101646802A (zh) 2010-02-10
JPWO2008120610A1 (ja) 2010-07-15
CN101646802B (zh) 2011-08-03
US20100126417A1 (en) 2010-05-27

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