[go: up one dir, main page]

WO2008120292A1 - Solid-state imaging apparatus - Google Patents

Solid-state imaging apparatus Download PDF

Info

Publication number
WO2008120292A1
WO2008120292A1 PCT/JP2007/053787 JP2007053787W WO2008120292A1 WO 2008120292 A1 WO2008120292 A1 WO 2008120292A1 JP 2007053787 W JP2007053787 W JP 2007053787W WO 2008120292 A1 WO2008120292 A1 WO 2008120292A1
Authority
WO
WIPO (PCT)
Prior art keywords
section
voltage
period
solid
imaging apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/053787
Other languages
French (fr)
Japanese (ja)
Inventor
Yukinobu Sugiyama
Seiichiro Mizuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to PCT/JP2007/053787 priority Critical patent/WO2008120292A1/en
Publication of WO2008120292A1 publication Critical patent/WO2008120292A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

A solid-state imaging apparatus (1) is provided with a photoresponse section (11), a first holding section (21), a second holding section (22), an output selecting section (31), an AD converting section (40), a biasing section (50) and a control section (61). A voltage (V1m,n) corresponding to the quantity of charges generated by a photodiode of each pixel section (Pm,n) on the mth row of the photoresponse section (11) corresponding to light input over a first period is held by the first holding section (21), and a voltage (V2m,n) corresponding to the quantity of charges generated by the photodiode of each pixel section (Pm,n) on the mth row corresponding to light input over a second period, which is shorter than the first period, is held by a second holding section (22). An output selecting section (31) selectively outputs the voltage (V1m,n) when the voltage (V1m,n) is less than a reference voltage (Vsat), and selectively outputs a voltage (V2m,n) when the voltage is not less than the reference voltage.
PCT/JP2007/053787 2007-02-28 2007-02-28 Solid-state imaging apparatus Ceased WO2008120292A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/053787 WO2008120292A1 (en) 2007-02-28 2007-02-28 Solid-state imaging apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/053787 WO2008120292A1 (en) 2007-02-28 2007-02-28 Solid-state imaging apparatus

Publications (1)

Publication Number Publication Date
WO2008120292A1 true WO2008120292A1 (en) 2008-10-09

Family

ID=39807883

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/053787 Ceased WO2008120292A1 (en) 2007-02-28 2007-02-28 Solid-state imaging apparatus

Country Status (1)

Country Link
WO (1) WO2008120292A1 (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000023044A (en) * 1998-06-30 2000-01-21 Toshiba Corp Imaging device
JP2000092396A (en) * 1998-09-16 2000-03-31 Olympus Optical Co Ltd Image pickup device using amplification type solid-state image pickup element
JP2001268451A (en) * 2000-03-23 2001-09-28 Nikon Corp Imaging device
JP2002500476A (en) * 1997-12-31 2002-01-08 ジェンテクス・コーポレーション Optical sensor with wide dynamic range
JP2002517135A (en) * 1998-05-29 2002-06-11 サーノフ コーポレイション Extended dynamic range image sensor system
JP2003198948A (en) * 2001-12-25 2003-07-11 Sony Corp Solid-state imaging device and driving method of solid-state imaging device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002500476A (en) * 1997-12-31 2002-01-08 ジェンテクス・コーポレーション Optical sensor with wide dynamic range
JP2002517135A (en) * 1998-05-29 2002-06-11 サーノフ コーポレイション Extended dynamic range image sensor system
JP2000023044A (en) * 1998-06-30 2000-01-21 Toshiba Corp Imaging device
JP2000092396A (en) * 1998-09-16 2000-03-31 Olympus Optical Co Ltd Image pickup device using amplification type solid-state image pickup element
JP2001268451A (en) * 2000-03-23 2001-09-28 Nikon Corp Imaging device
JP2003198948A (en) * 2001-12-25 2003-07-11 Sony Corp Solid-state imaging device and driving method of solid-state imaging device

Similar Documents

Publication Publication Date Title
WO2012028441A3 (en) Apparatus having a plurality of photosensitive microcells arrange in row or matrix form
TW200704169A (en) CMOS image sensor pixel with selectable binning
WO2010100574A3 (en) Temperature compensation and control circuit for single photon counters
TW200721814A (en) Efficient charge transferring in CMOS imagers
EP1968307A3 (en) Image sensing apparatus and image sensing system
JP2012253740A5 (en)
WO2009028343A1 (en) Photoelectric conversion circuit and solid-state imaging device provided with the same
WO2009031589A1 (en) Solid-state imaging device
RU2014135151A (en) IMAGE FORMING DEVICE, IMAGE FORMING SYSTEM AND METHOD FOR PERFORMING AN IMAGE FORMING DEVICE
US20150201141A1 (en) Correlated double sampled (cds) pixel sense amplifier
EP2437484A3 (en) Imaging device and camera system
WO2009057436A1 (en) Imaging device
WO2002043366A3 (en) Programmable resolution cmos image sensor
JP2015095676A5 (en)
JP2013123109A5 (en)
JP2014160066A5 (en)
EP4283980A3 (en) Photon counting device and photon counting method
US7906752B2 (en) Solid-state imaging apparatus
KR20130090566A (en) Image sensor and image processing apparatus using the same
US20140367550A1 (en) Photoelectric conversion device
RU2010128548A (en) IMAGE FORMING DEVICE, METHOD FOR MANAGING AN IMAGE FORMING DEVICE AND CAMERA WITH IMAGE FORMING DEVICE
US8982255B2 (en) Image pickup including photoelectric conversion
US10944924B2 (en) Image sensor and electronic camera
TW200701445A (en) Image pixel of cmos image sensor
EP2482545A3 (en) An imaging apparatus, an imaging system, and a driving method of an imaging apparatus

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07737515

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07737515

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP