[go: up one dir, main page]

WO2008117371A1 - Elément de stockage à résistance et dispositif de stockage semi-conducteur non volatile - Google Patents

Elément de stockage à résistance et dispositif de stockage semi-conducteur non volatile Download PDF

Info

Publication number
WO2008117371A1
WO2008117371A1 PCT/JP2007/056022 JP2007056022W WO2008117371A1 WO 2008117371 A1 WO2008117371 A1 WO 2008117371A1 JP 2007056022 W JP2007056022 W JP 2007056022W WO 2008117371 A1 WO2008117371 A1 WO 2008117371A1
Authority
WO
WIPO (PCT)
Prior art keywords
resistance storage
conductive film
storage element
resistance
volatile semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/056022
Other languages
English (en)
Japanese (ja)
Inventor
Chikako Yoshida
Takashi Iiduka
Hideyuki Noshiro
Shinji Miyagaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2009506089A priority Critical patent/JP5345052B2/ja
Priority to PCT/JP2007/056022 priority patent/WO2008117371A1/fr
Publication of WO2008117371A1 publication Critical patent/WO2008117371A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/028—Formation of switching materials, e.g. deposition of layers by conversion of electrode material, e.g. oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/55—Structure including two electrodes, a memory active layer and at least two other layers which can be a passive or source or reservoir layer or a less doped memory active layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)

Abstract

L'invention concerne un élément de stockage à résistance qui comprend une électrode inférieure (12), une couche (14) de stockage à résistance formée sur l'électrode inférieure et une électrode supérieure (16) formée sur la couche de stockage à résistance, qui peut stocker un état hautement résistant et un état faiblement résistant et qui peut commuter entre l'état hautement résistant et l'état faiblement résistant conformément à la tension appliquée. Dans l'élément de stockage à résistance, l'électrode inférieure ou l'électrode supérieure comprennent un premier film conducteur (74) qui est formé sur le côté en regard de la couche de stockage à résistance et comprend un métal noble et un second film conducteur (76) qui est en contact avec le premier film conducteur, a une épaisseur de film plus importante que le premier film conducteur, et comprend un métal non noble.
PCT/JP2007/056022 2007-03-23 2007-03-23 Elément de stockage à résistance et dispositif de stockage semi-conducteur non volatile Ceased WO2008117371A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009506089A JP5345052B2 (ja) 2007-03-23 2007-03-23 抵抗記憶素子及び不揮発性半導体記憶装置
PCT/JP2007/056022 WO2008117371A1 (fr) 2007-03-23 2007-03-23 Elément de stockage à résistance et dispositif de stockage semi-conducteur non volatile

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/056022 WO2008117371A1 (fr) 2007-03-23 2007-03-23 Elément de stockage à résistance et dispositif de stockage semi-conducteur non volatile

Publications (1)

Publication Number Publication Date
WO2008117371A1 true WO2008117371A1 (fr) 2008-10-02

Family

ID=39788116

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/056022 Ceased WO2008117371A1 (fr) 2007-03-23 2007-03-23 Elément de stockage à résistance et dispositif de stockage semi-conducteur non volatile

Country Status (2)

Country Link
JP (1) JP5345052B2 (fr)
WO (1) WO2008117371A1 (fr)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010050094A1 (fr) * 2008-10-30 2010-05-06 パナソニック株式会社 Mémoire non volatile à semi-conducteur et procédé de fabrication associé
JP2010527151A (ja) * 2007-05-09 2010-08-05 インターモレキュラー， インコーポレイテッド 抵抗性スイッチング不揮発性メモリ要素
WO2011074243A1 (fr) * 2009-12-18 2011-06-23 パナソニック株式会社 Élément à résistance variable et son procédé de fabrication
JP2012089643A (ja) * 2010-10-19 2012-05-10 Sony Corp 記憶装置の製造方法、並びに記憶素子および記憶装置
CN102484113A (zh) * 2009-08-28 2012-05-30 松下电器产业株式会社 半导体存储装置及其制造方法
JP2012151346A (ja) * 2011-01-20 2012-08-09 Toyota Central R&D Labs Inc Ｍｉｍ型トンネルダイオードの製造方法
US8445885B2 (en) 2008-12-04 2013-05-21 Panasonic Corporation Nonvolatile memory element having a thin platinum containing electrode
US8675393B2 (en) 2010-03-25 2014-03-18 Panasonic Corporation Method for driving non-volatile memory element, and non-volatile memory device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001284543A (ja) * 2000-03-30 2001-10-12 Seiko Epson Corp メモリ装置およびその製造方法
JP2004363604A (ja) * 2003-06-03 2004-12-24 Samsung Electronics Co Ltd 一つのスイッチング素子と一つの抵抗体とを含む不揮発性メモリ装置およびその製造方法
JP2007048779A (ja) * 2005-08-05 2007-02-22 Sharp Corp 可変抵抗素子とその製造方法並びにそれを備えた記憶装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4783070B2 (ja) * 2005-06-24 2011-09-28 シャープ株式会社 半導体記憶装置及びその製造方法
KR101100427B1 (ko) * 2005-08-24 2011-12-30 삼성전자주식회사 이온 전도층을 포함하는 불휘발성 반도체 메모리 장치와 그제조 및 동작 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001284543A (ja) * 2000-03-30 2001-10-12 Seiko Epson Corp メモリ装置およびその製造方法
JP2004363604A (ja) * 2003-06-03 2004-12-24 Samsung Electronics Co Ltd 一つのスイッチング素子と一つの抵抗体とを含む不揮発性メモリ装置およびその製造方法
JP2007048779A (ja) * 2005-08-05 2007-02-22 Sharp Corp 可変抵抗素子とその製造方法並びにそれを備えた記憶装置

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013175768A (ja) * 2007-05-09 2013-09-05 Intermolecular Inc 抵抗性スイッチング不揮発性メモリ要素
JP2010527151A (ja) * 2007-05-09 2010-08-05 インターモレキュラー， インコーポレイテッド 抵抗性スイッチング不揮発性メモリ要素
JPWO2010050094A1 (ja) * 2008-10-30 2012-03-29 パナソニック株式会社 不揮発性半導体記憶装置及びその製造方法
US8445883B2 (en) 2008-10-30 2013-05-21 Panasonic Corporation Nonvolatile semiconductor memory device and manufacturing method thereof
WO2010050094A1 (fr) * 2008-10-30 2010-05-06 パナソニック株式会社 Mémoire non volatile à semi-conducteur et procédé de fabrication associé
CN102124564A (zh) * 2008-10-30 2011-07-13 松下电器产业株式会社 非易失性半导体存储装置及其制造方法
JP5400797B2 (ja) * 2008-12-04 2014-01-29 パナソニック株式会社 不揮発性記憶素子
US8445885B2 (en) 2008-12-04 2013-05-21 Panasonic Corporation Nonvolatile memory element having a thin platinum containing electrode
JP5417445B2 (ja) * 2009-08-28 2014-02-12 パナソニック株式会社 半導体記憶装置の製造方法
CN102484113A (zh) * 2009-08-28 2012-05-30 松下电器产业株式会社 半导体存储装置及其制造方法
US9570682B2 (en) 2009-08-28 2017-02-14 Panasonic Intellectual Property Management Co., Ltd. Semiconductor memory device and method of manufacturing the same
CN102696107A (zh) * 2009-12-18 2012-09-26 松下电器产业株式会社 电阻变化型元件及其制造方法
JP5036909B2 (ja) * 2009-12-18 2012-09-26 パナソニック株式会社 抵抗変化型素子及びその製造方法
WO2011074243A1 (fr) * 2009-12-18 2011-06-23 パナソニック株式会社 Élément à résistance variable et son procédé de fabrication
US8530321B2 (en) 2009-12-18 2013-09-10 Panasonic Corporation Variable resistance element and manufacturing method thereof
US8675393B2 (en) 2010-03-25 2014-03-18 Panasonic Corporation Method for driving non-volatile memory element, and non-volatile memory device
JP2012089643A (ja) * 2010-10-19 2012-05-10 Sony Corp 記憶装置の製造方法、並びに記憶素子および記憶装置
US9118005B2 (en) 2010-10-19 2015-08-25 Sony Corporation Manufacturing method of a memory device with a reversible variable-resistance memory layer between electrodes extending along intersecting directions
JP2012151346A (ja) * 2011-01-20 2012-08-09 Toyota Central R&D Labs Inc Ｍｉｍ型トンネルダイオードの製造方法

Also Published As

Publication number Publication date
JPWO2008117371A1 (ja) 2010-07-08
JP5345052B2 (ja) 2013-11-20

Similar Documents

Publication Publication Date Title
WO2008117371A1 (fr) Elément de stockage à résistance et dispositif de stockage semi-conducteur non volatile
WO2009050833A1 (fr) Elément de mémoire non volatile et dispositif semi-conducteur non volatile utilisant l'élément de mémoire non volatile
WO2007035357A3 (fr) Transfert de metaux et de polymeres conducteurs
TW200701222A (en) Thin film fuse phase change ram and manufacturing method
WO2008033878A3 (fr) Interconnexions locales améliorées utilisant des électrodes ferroélectriques
WO2008099863A1 (fr) Semi-conducteur, dispositif à semi-conducteur et dispositif de circuit à transistor complémentaire
WO2007000542A3 (fr) Electrode de dispositifs electrochimiques/electrocommandables
WO2007059971A3 (fr) Capteur de pression
WO2009108765A3 (fr) Capteur d'écran tactile possédant une résistance de feuille variable
WO2009154812A3 (fr) Capteur pour écran tactile
WO2009011791A3 (fr) Dispositif photovoltaïque comprenant une matière décalant la luminescence vers les faibles longueurs d'onde
EP1780814A3 (fr) Cellule mémoire à changement de phase
TW200725880A (en) Semiconductor piezoresistive sensor and operation method thereof
TW200737502A (en) Phase-change memory device and methods of fabricating the same
WO2006020345A3 (fr) Encapsulation de contact electrique
TW200618350A (en) Light-emitting element, display device, and electronic appliance
TWI263365B (en) Multilayered phase change memory
WO2008029060A3 (fr) Substrat pour dispositif electroluminescent organique, utilisation et procede de fabrication de ce substrat, ainsi que dispositif electroluminescent organique.
WO2008102718A1 (fr) Dispositif de mémoire semi-conducteur
WO2008143721A3 (fr) Cellule photovoltaïque avec un refroidissement de support chaud réduit
WO2008149605A1 (fr) Elément de résistance variable et dispositif à semi-conducteur associé
WO2009155164A3 (fr) Film conducteur ou électrode conductrice présentant un rendement optique et électrique amélioré
JP2006245231A5 (fr)
TW200735282A (en) Phase-change memory device and method of manufacturing same
TW200723508A (en) Phase-change memory device and method of manufacturing same

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07739463

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2009506089

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07739463

Country of ref document: EP

Kind code of ref document: A1