[go: up one dir, main page]

WO2008114740A1 - 極低酸素濃度ガス生成装置、処理システム、薄膜堆積方法及び不活性ガス - Google Patents

極低酸素濃度ガス生成装置、処理システム、薄膜堆積方法及び不活性ガス Download PDF

Info

Publication number
WO2008114740A1
WO2008114740A1 PCT/JP2008/054778 JP2008054778W WO2008114740A1 WO 2008114740 A1 WO2008114740 A1 WO 2008114740A1 JP 2008054778 W JP2008054778 W JP 2008054778W WO 2008114740 A1 WO2008114740 A1 WO 2008114740A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas
extremely low
oxygen concentration
low oxygen
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/054778
Other languages
English (en)
French (fr)
Inventor
Naoki Shirakawa
Yoshiyuki Yoshida
Kazuhiko Endo
Tetsuya Mino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
REDOXYON Corp
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
REDOXYON Corp
National Institute of Advanced Industrial Science and Technology AIST
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007068989A external-priority patent/JP2008231466A/ja
Priority claimed from JP2007115872A external-priority patent/JP5483043B2/ja
Priority claimed from JP2007115882A external-priority patent/JP5544678B2/ja
Priority claimed from JP2008038810A external-priority patent/JP5187736B2/ja
Application filed by REDOXYON Corp, National Institute of Advanced Industrial Science and Technology AIST filed Critical REDOXYON Corp
Priority to US12/531,260 priority Critical patent/US8597732B2/en
Publication of WO2008114740A1 publication Critical patent/WO2008114740A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B23/00—Noble gases; Compounds thereof
    • C01B23/001—Purification or separation processes of noble gases
    • C01B23/0036—Physical processing only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/32—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by electrical effects other than those provided for in group B01D61/00
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/04—Purification or separation of nitrogen
    • C01B21/0405—Purification or separation processes
    • C01B21/0433—Physical processing only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5853—Oxidation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4402—Reduction of impurities in the source gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2257/00—Components to be removed
    • B01D2257/10—Single element gases other than halogens
    • B01D2257/104—Oxygen
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2210/00—Purification or separation of specific gases
    • C01B2210/0029—Obtaining noble gases
    • C01B2210/0031—Helium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2210/00—Purification or separation of specific gases
    • C01B2210/0029—Obtaining noble gases
    • C01B2210/0034—Argon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2210/00—Purification or separation of specific gases
    • C01B2210/0043—Impurity removed
    • C01B2210/0045—Oxygen
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2210/00—Purification or separation of specific gases
    • C01B2210/0043—Impurity removed
    • C01B2210/0062—Water

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Separation Using Semi-Permeable Membranes (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)

Abstract

　大量の極低酸素ガスを生成できることで、酸化を防ぐ目的の工程を含む部分で効果を発揮し、産業利用を目的としたパーティクルの無い、極低酸素濃度ガスの供給を行うことが出来る。配管からのガスが通過する中空を有するセラミック製固体電解質体２１と金属製配管２０とを密封固着する酸素分子排出装置２６を備える。
PCT/JP2008/054778 2007-03-16 2008-03-14 極低酸素濃度ガス生成装置、処理システム、薄膜堆積方法及び不活性ガス Ceased WO2008114740A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/531,260 US8597732B2 (en) 2007-03-16 2008-03-14 Thin film depositing method

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2007-068989 2007-03-16
JP2007068989A JP2008231466A (ja) 2007-03-16 2007-03-16 極低酸素濃度ガス生成装置
JP2007115872A JP5483043B2 (ja) 2007-04-25 2007-04-25 極低水分ガス生成装置、不活性ガス、処理装置、及びガス中の水分量測定方法
JP2007115882A JP5544678B2 (ja) 2007-04-25 2007-04-25 処理システム及び被処理物体の処理方法
JP2007-115882 2007-04-25
JP2007-115872 2007-04-25
JP2008-038810 2008-02-20
JP2008038810A JP5187736B2 (ja) 2008-02-20 2008-02-20 薄膜堆積方法

Publications (1)

Publication Number Publication Date
WO2008114740A1 true WO2008114740A1 (ja) 2008-09-25

Family

ID=39765848

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/054778 Ceased WO2008114740A1 (ja) 2007-03-16 2008-03-14 極低酸素濃度ガス生成装置、処理システム、薄膜堆積方法及び不活性ガス

Country Status (3)

Country Link
US (1) US8597732B2 (ja)
TW (1) TWI388371B (ja)
WO (1) WO2008114740A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012028715A (ja) * 2010-07-28 2012-02-09 Stlab Co Ltd 酸素分圧制御熱処理装置
CN102637564A (zh) * 2012-04-19 2012-08-15 镇江市电子管厂 高频陶瓷气体放电管
JP2017135289A (ja) * 2016-01-28 2017-08-03 株式会社リコー ｐ型酸化物半導体膜の形成方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5674898B1 (ja) * 2013-10-31 2015-02-25 エナジーサポート株式会社 酸素含有ガス製造装置
KR20170071477A (ko) * 2014-08-13 2017-06-23 고쿠리츠켄큐카이하츠호진 상교기쥬츠 소고켄큐쇼 금속재료의 처리장치
CN108680422A (zh) * 2018-08-02 2018-10-19 济南兰光机电技术有限公司 去除高纯度惰性气体中水分的净化装置、系统及方法
KR20230124060A (ko) * 2021-01-26 2023-08-24 후지필름 가부시키가이샤 분석 장치, 및 분석 방법

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0341850U (ja) * 1989-09-01 1991-04-22
JPH04361151A (ja) * 1990-12-20 1992-12-14 General Electric Co <Ge> 高温、高放射線の水性環境に用いる電極プローブ
JPH0625822A (ja) * 1991-05-03 1994-02-01 Boc Group Inc:The ステンレス鋼表面不動態化処理
JPH0686708A (ja) * 1991-08-09 1994-03-29 Tanaka Kikinzoku Kogyo Kk 中空装飾部品の製造方法
JP2002116281A (ja) * 2000-10-10 2002-04-19 Toshiba Corp 白金照合電極
JP2005331339A (ja) * 2004-05-19 2005-12-02 National Institute Of Advanced Industrial & Technology 酸素分圧制御装置及び酸素分圧制御用固体電解質の回復方法
JP2007008750A (ja) * 2005-06-29 2007-01-18 Canon Machinery Inc ガスポンプ

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0341850A (ja) 1989-07-07 1991-02-22 Toshiba Corp 電話システム
US6057238A (en) * 1998-03-20 2000-05-02 Micron Technology, Inc. Method of using hydrogen and oxygen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom
JP4361151B2 (ja) 1998-12-16 2009-11-11 高砂熱学工業株式会社 空調設備用制御盤と制御インターフェース装置
US6881269B2 (en) * 2000-08-17 2005-04-19 Novartis Ag Lens plasma coating system
JP3937892B2 (ja) * 2002-04-01 2007-06-27 日本電気株式会社 薄膜形成方法および半導体装置の製造方法
JP2005026400A (ja) * 2003-07-01 2005-01-27 Matsushita Electric Ind Co Ltd 半導体発光装置およびその製造方法
US7654221B2 (en) * 2003-10-06 2010-02-02 Applied Materials, Inc. Apparatus for electroless deposition of metals onto semiconductor substrates
CA2497069A1 (en) * 2004-02-19 2005-08-19 Dai-Ichi Kogyo Seiyaku Co., Ltd. Method for drying nonionic alkylene oxide-type water-soluble resin, method for packaging it, and method for transporting it

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0341850U (ja) * 1989-09-01 1991-04-22
JPH04361151A (ja) * 1990-12-20 1992-12-14 General Electric Co <Ge> 高温、高放射線の水性環境に用いる電極プローブ
JPH0625822A (ja) * 1991-05-03 1994-02-01 Boc Group Inc:The ステンレス鋼表面不動態化処理
JPH0686708A (ja) * 1991-08-09 1994-03-29 Tanaka Kikinzoku Kogyo Kk 中空装飾部品の製造方法
JP2002116281A (ja) * 2000-10-10 2002-04-19 Toshiba Corp 白金照合電極
JP2005331339A (ja) * 2004-05-19 2005-12-02 National Institute Of Advanced Industrial & Technology 酸素分圧制御装置及び酸素分圧制御用固体電解質の回復方法
JP2007008750A (ja) * 2005-06-29 2007-01-18 Canon Machinery Inc ガスポンプ

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012028715A (ja) * 2010-07-28 2012-02-09 Stlab Co Ltd 酸素分圧制御熱処理装置
CN102637564A (zh) * 2012-04-19 2012-08-15 镇江市电子管厂 高频陶瓷气体放电管
JP2017135289A (ja) * 2016-01-28 2017-08-03 株式会社リコー ｐ型酸化物半導体膜の形成方法

Also Published As

Publication number Publication date
US8597732B2 (en) 2013-12-03
TW200843837A (en) 2008-11-16
US20100178437A1 (en) 2010-07-15
TWI388371B (zh) 2013-03-11

Similar Documents

Publication Publication Date Title
WO2008114740A1 (ja) 極低酸素濃度ガス生成装置、処理システム、薄膜堆積方法及び不活性ガス
Shalini et al. Nitrogen management in landfill leachate: application of SHARON, ANAMMOX and combined SHARON–ANAMMOX process
WO2008149844A1 (ja) 成膜方法及び成膜装置
WO2006019565A3 (en) Method and system for coating internal surfaces of prefabricated process piping in the field
WO2010027938A3 (en) Desalination apparatus and process
EP2353698A8 (en) Method and equipment for selectively collecting process effluent
GB2419896A (en) Chemical vapor deposition reactor
JP2011500100A5 (ja)
WO2008127379A3 (en) Methods and systems of producing molecular hydrogen using a plasma system
TW200636834A (en) Gate stack engineering by electrochemical processing utilizing through-gate-dielectric current flow
WO2009020151A1 (ja) 複合集束イオンビーム装置及びそれを用いた加工観察方法、加工方法
BRPI0513705A (pt) processo para produzir pó de cobre por eletro-recuperação
TW200713447A (en) Method and apparatus for forming silicon oxide film
AR056366A1 (es) Metodo y disposicion de separacion para corrientes bajo tratamiento en unidades de separacion de componentes
WO2006119192A3 (en) Method and apparatus for monitoring mercury in a gas sample
TW200638984A (en) Process for oxygen enrichment in gases, plants suitable for this purpose and the use thereof
TW200704815A (en) Method for producing silicon oxide film, control program thereof, recording medium and plasma processing apparatus
WO2005094335A3 (en) Wide dynamic range multistage plasmatron reformer system
TW200620458A (en) Sulfur hexafluoride remote plasma source clean
EP2144316A3 (en) Method for manufacturing electrochemical cell parts comprising a material deposition process
EA200801948A1 (ru) Система и способ дегазации полимерного порошка
WO2006120449A8 (en) Nanostructure production methods and apparatus
TW200744130A (en) Cleaning method of apparatus for depositing metal containing film
WO2007011669A3 (en) Oxygen-producing inert anodes for som process
WO2007130752A3 (en) Method of forming multi-layer films using corona treatments

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08722174

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 12531260

Country of ref document: US

122 Ep: pct application non-entry in european phase

Ref document number: 08722174

Country of ref document: EP

Kind code of ref document: A1