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WO2008114471A1 - 膜厚計測方法及びその装置ならびに薄膜デバイスの製造システム - Google Patents

膜厚計測方法及びその装置ならびに薄膜デバイスの製造システム Download PDF

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Publication number
WO2008114471A1
WO2008114471A1 PCT/JP2007/071180 JP2007071180W WO2008114471A1 WO 2008114471 A1 WO2008114471 A1 WO 2008114471A1 JP 2007071180 W JP2007071180 W JP 2007071180W WO 2008114471 A1 WO2008114471 A1 WO 2008114471A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
film thickness
thin
measuring method
manufacturing system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/071180
Other languages
English (en)
French (fr)
Inventor
Satoshi Sakai
Yoichiro Tsumura
Masami Iida
Kohei Kawazoe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Heavy Industries Ltd
Original Assignee
Mitsubishi Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Heavy Industries Ltd filed Critical Mitsubishi Heavy Industries Ltd
Priority to EP07830914A priority Critical patent/EP2124016A1/en
Priority to CN2007800476073A priority patent/CN101568796B/zh
Priority to US12/517,110 priority patent/US8184303B2/en
Publication of WO2008114471A1 publication Critical patent/WO2008114471A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/107—Continuous treatment of the devices, e.g. roll-to roll processes or multi-chamber deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Photovoltaic Devices (AREA)

Abstract

　作業員の負担を軽減させるとともに、製造効率を向上させることを目的とする。ライン照明器３により、基板Ｗ上に製膜された透明導電膜または透明光学膜にライン照明光を照射し、透明導電膜または透明光学膜で反射されたライン反射光をカメラで検出し、検出した反射光の色評価値を計測し、色評価値と膜厚とが関連付けられている膜厚特性を用いて、計測した色評価値に対応する膜厚を求める。
PCT/JP2007/071180 2007-02-20 2007-10-31 膜厚計測方法及びその装置ならびに薄膜デバイスの製造システム Ceased WO2008114471A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP07830914A EP2124016A1 (en) 2007-02-20 2007-10-31 Film thickness measuring method, its apparatus, and manufacturing system for thin-film device
CN2007800476073A CN101568796B (zh) 2007-02-20 2007-10-31 膜厚计测方法及其装置、以及薄膜设备的制造系统
US12/517,110 US8184303B2 (en) 2007-02-20 2007-10-31 Film-thickness measurement method and apparatus therefor, and thin-film device fabrication system

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-039595 2007-02-20
JP2007039595A JP2008205188A (ja) 2007-02-20 2007-02-20 膜厚計測方法及びその装置ならびに薄膜製造システム

Publications (1)

Publication Number Publication Date
WO2008114471A1 true WO2008114471A1 (ja) 2008-09-25

Family

ID=39765590

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/071180 Ceased WO2008114471A1 (ja) 2007-02-20 2007-10-31 膜厚計測方法及びその装置ならびに薄膜デバイスの製造システム

Country Status (5)

Country Link
US (1) US8184303B2 (ja)
EP (1) EP2124016A1 (ja)
JP (1) JP2008205188A (ja)
CN (1) CN101568796B (ja)
WO (1) WO2008114471A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010101116A1 (ja) * 2009-03-03 2010-09-10 シャープ株式会社 半導体層とその層厚測定部位を有する積層体、およびそれを用いた薄膜光電変換素子と集積型薄膜太陽電池

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101363768B (zh) * 2008-09-28 2010-06-09 厦门大学 一种单层光学薄膜光学常数和厚度的检测方法
JP4796160B2 (ja) * 2009-02-27 2011-10-19 三菱重工業株式会社 薄膜の検査装置及び検査方法
US8334986B2 (en) 2010-02-25 2012-12-18 Corning Incorporated Methods and apparatus for the measurement of film thickness
CN102893140B (zh) * 2010-05-19 2014-10-22 夏普株式会社 模具的检查方法
CN102927918A (zh) * 2010-07-01 2013-02-13 立晔科技股份有限公司 太阳能芯片的抗反射层的检测方法及检测装置
EP2678634A1 (en) * 2011-02-24 2014-01-01 Corning Incorporated Methods and apparatus for the measurement of film thickness
CN102998471A (zh) * 2012-03-28 2013-03-27 杨阳 柔性CuCNT复合纳米透明导电薄膜的检测方法
JP2014146704A (ja) * 2013-01-29 2014-08-14 Fuji Electric Co Ltd 半導体装置
WO2015165503A1 (en) * 2014-04-29 2015-11-05 Hewlett-Packard Indigo B.V. Transparent layer thickness measurement
CN105444683B (zh) * 2014-08-26 2018-07-03 达观科技有限公司 透光膜的检测系统及其检测方法
WO2016108843A1 (en) * 2014-12-30 2016-07-07 Kimberly-Clark Worldwide, Inc. Web caliper measurement and control system
JP6601950B2 (ja) * 2015-10-01 2019-11-06 日産自動車株式会社 膜厚検査装置、膜厚検査方法、膜構造体の製造装置、および膜構造体の製造方法
CN105758318A (zh) * 2016-02-25 2016-07-13 深圳市众诚达应用材料科技有限公司 基于机器视觉色差法在线检测CdS薄膜厚度的系统及方法
CN106441126A (zh) * 2016-10-26 2017-02-22 电子科技大学 一种基于反射率光谱测量光学薄膜厚度的方法及系统
JP7296257B2 (ja) * 2019-06-10 2023-06-22 東京エレクトロン株式会社 基板検査システム、基板検査方法、及び記憶媒体
US11216928B2 (en) * 2019-09-10 2022-01-04 The Boeing Company Method and apparatus for coating thickness inspection of a surface and coating defects of the surface
US11703459B2 (en) * 2019-11-04 2023-07-18 Tokyo Electron Limited System and method to calibrate a plurality of wafer inspection system (WIS) modules
DE102021001955B4 (de) * 2021-04-14 2023-03-23 Baumer Inspection Gmbh Vorrichtung und Verfahren zur fluoreszenzbasierten Inspektion sowie Prüfanordung mit einer solchen Vorrichtung
CN115371570A (zh) * 2022-08-03 2022-11-22 复旦大学 一种基于色品坐标测量获得薄膜厚度的方法
CN116031334B (zh) * 2023-03-29 2023-05-30 英利能源发展(保定)有限公司 TOPCon电池生产过程中多晶硅层厚度的判断方法
CN116721074B (zh) * 2023-06-07 2024-02-13 昊泽吉顺新材料(深圳)有限公司 基于图像分析的手机保护膜生产质量检测系统
CN117268270B (zh) * 2023-11-23 2024-02-06 中国航发北京航空材料研究院 连续化学气相沉积界面层厚度的实时监控装置及其方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6242006A (ja) * 1985-08-19 1987-02-24 Nippon Soken Inc 光学薄膜の膜厚測定装置
JPH07141703A (ja) * 1993-11-19 1995-06-02 Toray Ind Inc 光記録媒体の検査方法および製造方法
JPH10311708A (ja) 1997-05-13 1998-11-24 Tokyo Seimitsu Co Ltd 干渉式膜厚計
JP2004095731A (ja) * 2002-08-30 2004-03-25 Mitsubishi Heavy Ind Ltd 太陽電池パネル色むら検査装置
JP2005134324A (ja) * 2003-10-31 2005-05-26 Mitsubishi Heavy Ind Ltd 透明導電膜分析方法および透明導電膜品質管理方法ならびに太陽電池

Family Cites Families (3)

* Cited by examiner, † Cited by third party
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JPS6428510A (en) 1987-07-23 1989-01-31 Mitsubishi Electric Corp Micro gap measuring device
JP2006071316A (ja) 2004-08-31 2006-03-16 Technos Kk 膜厚取得方法
US20090107399A1 (en) * 2007-10-29 2009-04-30 Harald Bloess System and Method of Measuring Film Height on a Substrate

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6242006A (ja) * 1985-08-19 1987-02-24 Nippon Soken Inc 光学薄膜の膜厚測定装置
JPH07141703A (ja) * 1993-11-19 1995-06-02 Toray Ind Inc 光記録媒体の検査方法および製造方法
JPH10311708A (ja) 1997-05-13 1998-11-24 Tokyo Seimitsu Co Ltd 干渉式膜厚計
JP2004095731A (ja) * 2002-08-30 2004-03-25 Mitsubishi Heavy Ind Ltd 太陽電池パネル色むら検査装置
JP2005134324A (ja) * 2003-10-31 2005-05-26 Mitsubishi Heavy Ind Ltd 透明導電膜分析方法および透明導電膜品質管理方法ならびに太陽電池

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010101116A1 (ja) * 2009-03-03 2010-09-10 シャープ株式会社 半導体層とその層厚測定部位を有する積層体、およびそれを用いた薄膜光電変換素子と集積型薄膜太陽電池
US8962983B2 (en) 2009-03-03 2015-02-24 Sharp Kabushiki Kaisha Laminated body having semiconductor layer and layer thickness measurement portion, and thin-film photoelectric conversion device and integrated thin-film solar cell having the same

Also Published As

Publication number Publication date
US8184303B2 (en) 2012-05-22
CN101568796A (zh) 2009-10-28
JP2008205188A (ja) 2008-09-04
EP2124016A1 (en) 2009-11-25
CN101568796B (zh) 2013-03-27
US20100177326A1 (en) 2010-07-15

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