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WO2008114341A1 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
WO2008114341A1
WO2008114341A1 PCT/JP2007/055351 JP2007055351W WO2008114341A1 WO 2008114341 A1 WO2008114341 A1 WO 2008114341A1 JP 2007055351 W JP2007055351 W JP 2007055351W WO 2008114341 A1 WO2008114341 A1 WO 2008114341A1
Authority
WO
WIPO (PCT)
Prior art keywords
manufacturing
electrode material
semiconductor device
gate electrode
material film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/055351
Other languages
English (en)
French (fr)
Inventor
Masaki Okuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Semiconductor Ltd filed Critical Fujitsu Semiconductor Ltd
Priority to PCT/JP2007/055351 priority Critical patent/WO2008114341A1/ja
Priority to JP2009504941A priority patent/JP5110079B2/ja
Publication of WO2008114341A1 publication Critical patent/WO2008114341A1/ja
Priority to US12/543,794 priority patent/US8071448B2/en
Anticipated expiration legal-status Critical
Priority to US13/287,770 priority patent/US8507990B2/en
Priority to US13/934,759 priority patent/US8692331B2/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0147—Manufacturing their gate sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/90—MOSFET type gate sidewall insulating spacer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell

Landscapes

  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

　半導体装置の製造方法は、半導体基板上にゲート電極材料膜を成膜し、前記ゲート電極材料膜を線状にパタニングし、前記線状のゲート電極材料膜パタンの長辺に沿ってサイドウォールを形成し、その後に、前記直線を所定の箇所で切断して、複数のゲート電極に分断する工程を含む。
PCT/JP2007/055351 2007-03-16 2007-03-16 半導体装置およびその製造方法 Ceased WO2008114341A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
PCT/JP2007/055351 WO2008114341A1 (ja) 2007-03-16 2007-03-16 半導体装置およびその製造方法
JP2009504941A JP5110079B2 (ja) 2007-03-16 2007-03-16 半導体装置の製造方法
US12/543,794 US8071448B2 (en) 2007-03-16 2009-08-19 Semiconductor device and manufacturing method of the same
US13/287,770 US8507990B2 (en) 2007-03-16 2011-11-02 Semiconductor device and manufacturing method of the same
US13/934,759 US8692331B2 (en) 2007-03-16 2013-07-03 Semiconductor device and manufacturing method of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/055351 WO2008114341A1 (ja) 2007-03-16 2007-03-16 半導体装置およびその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/543,794 Continuation US8071448B2 (en) 2007-03-16 2009-08-19 Semiconductor device and manufacturing method of the same

Publications (1)

Publication Number Publication Date
WO2008114341A1 true WO2008114341A1 (ja) 2008-09-25

Family

ID=39765463

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/055351 Ceased WO2008114341A1 (ja) 2007-03-16 2007-03-16 半導体装置およびその製造方法

Country Status (3)

Country Link
US (3) US8071448B2 (ja)
JP (1) JP5110079B2 (ja)
WO (1) WO2008114341A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011124272A (ja) * 2009-12-08 2011-06-23 Oki Semiconductor Co Ltd 半導体装置及びその製造方法
JP2012174910A (ja) * 2011-02-22 2012-09-10 Renesas Electronics Corp 半導体装置およびその製造方法
JP2013157498A (ja) * 2012-01-31 2013-08-15 Renesas Electronics Corp 半導体装置及びその製造方法
JP2014507067A (ja) * 2011-01-11 2014-03-20 クアルコム，インコーポレイテッド 複数の電圧閾値を有するデバイスのための二重のポリラインパターニングを用いたスタンダードセルのアーキテクチャ
JP2015537383A (ja) * 2012-11-07 2015-12-24 クゥアルコム・インコーポレイテッドＱｕａｌｃｏｍｍ Ｉｎｃｏｒｐｏｒａｔｅｄ 共用拡散標準セルの構造

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI552230B (zh) * 2010-07-15 2016-10-01 聯華電子股份有限公司 金氧半導體電晶體及其製作方法
JP5699826B2 (ja) * 2011-06-27 2015-04-15 富士通セミコンダクター株式会社 レイアウト方法及び半導体装置の製造方法
US8735972B2 (en) * 2011-09-08 2014-05-27 International Business Machines Corporation SRAM cell having recessed storage node connections and method of fabricating same
US9633906B2 (en) 2014-01-24 2017-04-25 International Business Machines Corporation Gate structure cut after formation of epitaxial active regions

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0265213A (ja) * 1988-08-31 1990-03-05 Taiyo Yuden Co Ltd 還元再酸化型半導体コンデンサ用磁器組成物及び磁器

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JPS59127866A (ja) * 1983-01-13 1984-07-23 Toshiba Corp 半導体装置の製造方法
US5217913A (en) * 1988-08-31 1993-06-08 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing an MIS device having lightly doped drain structure and conductive sidewall spacers
US5146291A (en) * 1988-08-31 1992-09-08 Mitsubishi Denki Kabushiki Kaisha MIS device having lightly doped drain structure
JPH0265235A (ja) 1988-08-31 1990-03-05 Mitsubishi Electric Corp 半導体集積回路装置
US5021354A (en) * 1989-12-04 1991-06-04 Motorola, Inc. Process for manufacturing a semiconductor device
KR0170311B1 (ko) * 1995-06-23 1999-02-01 김광호 스태틱 랜덤 억세스 메모리 및 그 제조방법
JPH09289153A (ja) * 1996-04-23 1997-11-04 Oki Electric Ind Co Ltd 半導体装置の製造方法及びそれに用いるマスク
KR100223832B1 (ko) * 1996-12-27 1999-10-15 구본준 반도체 소자 및 그 제조방법
TW417253B (en) * 1998-07-27 2001-01-01 Seiko Epson Corp Semiconductor memory device and its manufacturing method
JP2000091448A (ja) * 1998-09-12 2000-03-31 Toshiba Corp 半導体装置の製造方法
TW480735B (en) * 2001-04-24 2002-03-21 United Microelectronics Corp Structure and manufacturing method of polysilicon thin film transistor
DE60237109D1 (de) * 2001-12-19 2010-09-02 Advanced Micro Devices Inc Rbesserte transistoreigenschaften
JP2004039705A (ja) * 2002-07-01 2004-02-05 Toshiba Corp 半導体装置
US6936528B2 (en) 2002-10-17 2005-08-30 Samsung Electronics Co., Ltd. Method of forming cobalt silicide film and method of manufacturing semiconductor device having cobalt silicide film
EP1411146B1 (en) * 2002-10-17 2010-06-09 Samsung Electronics Co., Ltd. Method of forming cobalt silicide film and method of manufacturing semiconductor device having cobalt silicide film
JP2004140315A (ja) 2002-10-17 2004-05-13 Samsung Electronics Co Ltd サリサイド工程を用いる半導体素子の製造方法
TW591741B (en) * 2003-06-09 2004-06-11 Taiwan Semiconductor Mfg Fabrication method for multiple spacer widths
US7718482B2 (en) * 2007-10-10 2010-05-18 Texas Instruments Incorporated CD gate bias reduction and differential N+ poly doping for CMOS circuits

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
JPH0265213A (ja) * 1988-08-31 1990-03-05 Taiyo Yuden Co Ltd 還元再酸化型半導体コンデンサ用磁器組成物及び磁器

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011124272A (ja) * 2009-12-08 2011-06-23 Oki Semiconductor Co Ltd 半導体装置及びその製造方法
JP2014507067A (ja) * 2011-01-11 2014-03-20 クアルコム，インコーポレイテッド 複数の電圧閾値を有するデバイスのための二重のポリラインパターニングを用いたスタンダードセルのアーキテクチャ
JP2015156517A (ja) * 2011-01-11 2015-08-27 クアルコム，インコーポレイテッド スタンダードセルのアーキテクチャと関連付けられるデバイスの製造方法
JP2012174910A (ja) * 2011-02-22 2012-09-10 Renesas Electronics Corp 半導体装置およびその製造方法
JP2013157498A (ja) * 2012-01-31 2013-08-15 Renesas Electronics Corp 半導体装置及びその製造方法
JP2015537383A (ja) * 2012-11-07 2015-12-24 クゥアルコム・インコーポレイテッドＱｕａｌｃｏｍｍ Ｉｎｃｏｒｐｏｒａｔｅｄ 共用拡散標準セルの構造
JP2017022395A (ja) * 2012-11-07 2017-01-26 クゥアルコム・インコーポレイテッドＱｕａｌｃｏｍｍ Ｉｎｃｏｒｐｏｒａｔｅｄ 共用拡散標準セルの構造
JP2018125542A (ja) * 2012-11-07 2018-08-09 クゥアルコム・インコーポレイテッドＱｕａｌｃｏｍｍ Ｉｎｃｏｒｐｏｒａｔｅｄ 共用拡散標準セルの構造

Also Published As

Publication number Publication date
US20090309141A1 (en) 2009-12-17
US20130292749A1 (en) 2013-11-07
US8507990B2 (en) 2013-08-13
JPWO2008114341A1 (ja) 2010-06-24
US20120043613A1 (en) 2012-02-23
US8071448B2 (en) 2011-12-06
JP5110079B2 (ja) 2012-12-26
US8692331B2 (en) 2014-04-08

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