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WO2008108475A1 - 波長可変半導体レーザ素子及びその制御装置、制御方法 - Google Patents

波長可変半導体レーザ素子及びその制御装置、制御方法 Download PDF

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Publication number
WO2008108475A1
WO2008108475A1 PCT/JP2008/054212 JP2008054212W WO2008108475A1 WO 2008108475 A1 WO2008108475 A1 WO 2008108475A1 JP 2008054212 W JP2008054212 W JP 2008054212W WO 2008108475 A1 WO2008108475 A1 WO 2008108475A1
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WIPO (PCT)
Prior art keywords
wavelength variable
semiconductor laser
laser element
wavelength
controlling
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Ceased
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PCT/JP2008/054212
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English (en)
French (fr)
Inventor
Naoki Fujiwara
Hiroyuki Ishii
Hiromi Oohashi
Hiroshi Okamoto
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Nippon Telegraph and Telephone Corp
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Nippon Telegraph and Telephone Corp
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Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to CN2008800065738A priority Critical patent/CN101622763B/zh
Priority to EP08721629A priority patent/EP2120301B1/en
Priority to US12/529,337 priority patent/US7961769B2/en
Publication of WO2008108475A1 publication Critical patent/WO2008108475A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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    • H01S5/00—Semiconductor lasers
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
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    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
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    • H01S5/00—Semiconductor lasers
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    • H01S5/00—Semiconductor lasers
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    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0268—Integrated waveguide grating router, e.g. emission of a multi-wavelength laser array is combined by a "dragon router"
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    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
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    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
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    • H01S5/0617—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium using memorised or pre-programmed laser characteristics
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    • H01S5/00—Semiconductor lasers
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    • H01S5/068—Stabilisation of laser output parameters
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    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
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    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

　波長ドリフトを防止する波長可変半導体レーザ素子及びその制御装置、制御方法を提供することを目的とする。レーザ光を発振する活性領域と、発振したレーザ光の波長をシフトする波長可変領域とを有する波長可変半導体レーザ素子において、波長可変領域に隣接して、投入した電力の大部分を熱に変換する熱補償領域を設け、波長可変領域に投入する電力と熱補償領域に投入する電力の和を常に一定になるようにする。
PCT/JP2008/054212 2007-03-08 2008-03-07 波長可変半導体レーザ素子及びその制御装置、制御方法 Ceased WO2008108475A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2008800065738A CN101622763B (zh) 2007-03-08 2008-03-07 波长可调半导体激光元件及其控制装置、控制方法
EP08721629A EP2120301B1 (en) 2007-03-08 2008-03-07 Wavelength tunable semiconductor laser device, controller for the same, and control method for the same
US12/529,337 US7961769B2 (en) 2007-03-08 2008-03-07 Wavelength tunable semiconductor laser device, controller for the same, and control method for the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-058090 2007-03-08
JP2007058090A JP4850757B2 (ja) 2007-03-08 2007-03-08 波長可変半導体レーザ素子及びその制御装置、制御方法

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WO2008108475A1 true WO2008108475A1 (ja) 2008-09-12

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US (1) US7961769B2 (ja)
EP (4) EP2348588B1 (ja)
JP (1) JP4850757B2 (ja)
CN (2) CN102637997B (ja)
AT (1) ATE547829T1 (ja)
WO (1) WO2008108475A1 (ja)

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JP6180666B1 (ja) * 2016-05-16 2017-08-16 三菱電機株式会社 波長可変光源および波長可変光源の波長切り替え制御方法
JP6626412B2 (ja) * 2016-06-20 2019-12-25 日本電信電話株式会社 波長可変半導体レーザアレイ及び波長可変半導体レーザアレイの制御方法
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