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WO2008108206A1 - 表示デバイス用透明電極およびその製造方法 - Google Patents

表示デバイス用透明電極およびその製造方法 Download PDF

Info

Publication number
WO2008108206A1
WO2008108206A1 PCT/JP2008/053212 JP2008053212W WO2008108206A1 WO 2008108206 A1 WO2008108206 A1 WO 2008108206A1 JP 2008053212 W JP2008053212 W JP 2008053212W WO 2008108206 A1 WO2008108206 A1 WO 2008108206A1
Authority
WO
WIPO (PCT)
Prior art keywords
transparent electrode
display devices
manufacturing
display device
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/053212
Other languages
English (en)
French (fr)
Inventor
Hiroshi Gotou
Hiroyuki Okuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobe Steel Ltd
Original Assignee
Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kobe Steel Ltd filed Critical Kobe Steel Ltd
Priority to US12/528,008 priority Critical patent/US20100032186A1/en
Publication of WO2008108206A1 publication Critical patent/WO2008108206A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Non-Insulated Conductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

　本発明は、窒素を含有する第１の透明導電膜と、窒素を含有しない第２の透明導電膜とを含み、前記第１の透明導電膜はアルミニウム合金膜に接触している表示デバイス用透明電極に関する。本発明によれば、アルミニウム合金膜と透明電極との間に通常設けられるバリアメタル層を省略しても、低い接触抵抗を維持しつつ、その分散を小さく抑えることができ、しかも、光透過特性にも優れた表示デバイス用透明電極が得られる。
PCT/JP2008/053212 2007-03-01 2008-02-25 表示デバイス用透明電極およびその製造方法 Ceased WO2008108206A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/528,008 US20100032186A1 (en) 2007-03-01 2008-02-25 Transparent electrode for display device and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-051858 2007-03-01
JP2007051858A JP4705062B2 (ja) 2007-03-01 2007-03-01 配線構造およびその作製方法

Publications (1)

Publication Number Publication Date
WO2008108206A1 true WO2008108206A1 (ja) 2008-09-12

Family

ID=39738098

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/053212 Ceased WO2008108206A1 (ja) 2007-03-01 2008-02-25 表示デバイス用透明電極およびその製造方法

Country Status (4)

Country Link
US (1) US20100032186A1 (ja)
JP (1) JP4705062B2 (ja)
TW (1) TW200846795A (ja)
WO (1) WO2008108206A1 (ja)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4117001B2 (ja) 2005-02-17 2008-07-09 株式会社神戸製鋼所 薄膜トランジスタ基板、表示デバイス、および表示デバイス用のスパッタリングターゲット
JP4355743B2 (ja) 2006-12-04 2009-11-04 株式会社神戸製鋼所 Ｃｕ合金配線膜とそのＣｕ合金配線膜を用いたフラットパネルディスプレイ用ＴＦＴ素子、及びそのＣｕ合金配線膜を作製するためのＣｕ合金スパッタリングターゲット
JP4611417B2 (ja) * 2007-12-26 2011-01-12 株式会社神戸製鋼所 反射電極、表示デバイス、および表示デバイスの製造方法
JP4469913B2 (ja) 2008-01-16 2010-06-02 株式会社神戸製鋼所 薄膜トランジスタ基板および表示デバイス
JP5231282B2 (ja) * 2008-02-22 2013-07-10 株式会社神戸製鋼所 タッチパネルセンサー
KR101124831B1 (ko) * 2008-03-31 2012-03-26 가부시키가이샤 고베 세이코쇼 표시 장치, 그 제조 방법 및 스퍼터링 타깃
JP5475260B2 (ja) * 2008-04-18 2014-04-16 株式会社神戸製鋼所 配線構造、薄膜トランジスタ基板およびその製造方法、並びに表示装置
WO2009131169A1 (ja) * 2008-04-23 2009-10-29 株式会社神戸製鋼所 表示装置用Ａｌ合金膜、表示装置およびスパッタリングターゲット
US8535997B2 (en) * 2008-07-03 2013-09-17 Kobe Steel, Ltd. Wiring structure, thin film transistor substrate, method for manufacturing thin film transistor substrate, and display device
JP2010065317A (ja) * 2008-08-14 2010-03-25 Kobe Steel Ltd 表示装置およびこれに用いるＣｕ合金膜
JP2010153365A (ja) * 2008-11-19 2010-07-08 Semiconductor Energy Lab Co Ltd 発光素子、発光装置、電子機器及び照明装置
WO2010058825A1 (ja) * 2008-11-20 2010-05-27 株式会社神戸製鋼所 表示装置用Ａｌ合金膜、薄膜トランジスタ基板およびその製造方法、並びに表示装置
JP4567091B1 (ja) 2009-01-16 2010-10-20 株式会社神戸製鋼所 表示装置用Ｃｕ合金膜および表示装置
JP2010272466A (ja) * 2009-05-25 2010-12-02 Fujifilm Corp 透明導電体及びその製造方法
KR101156428B1 (ko) * 2009-06-01 2012-06-18 삼성모바일디스플레이주식회사 유기 발광 소자
WO2011013683A1 (ja) 2009-07-27 2011-02-03 株式会社神戸製鋼所 配線構造および配線構造を備えた表示装置
JP2011035152A (ja) * 2009-07-31 2011-02-17 Kobe Steel Ltd 薄膜トランジスタ基板および表示デバイス
KR101097316B1 (ko) 2009-10-12 2011-12-23 삼성모바일디스플레이주식회사 유기 발광 소자
JP5437895B2 (ja) * 2010-04-20 2014-03-12 株式会社ジャパンディスプレイ 表示装置及びその製造方法
JP2012180540A (ja) 2011-02-28 2012-09-20 Kobe Steel Ltd 表示装置および半導体装置用Ａｌ合金膜
JP5524905B2 (ja) 2011-05-17 2014-06-18 株式会社神戸製鋼所 パワー半導体素子用Ａｌ合金膜
JP2013084907A (ja) 2011-09-28 2013-05-09 Kobe Steel Ltd 表示装置用配線構造
KR101213500B1 (ko) 2011-11-18 2012-12-20 삼성디스플레이 주식회사 유기 발광 소자
US9876189B2 (en) 2012-04-24 2018-01-23 Konica Minolta, Inc. Transparent electrode, electronic device, and transparent electrode manufacturing method
JP6465597B2 (ja) * 2014-09-09 2019-02-06 キヤノン株式会社 光電変換装置、光電変換システム
KR102198540B1 (ko) * 2015-11-25 2021-01-06 삼성전기주식회사 적층 세라믹 커패시터 및 그 실장 기판
KR102752841B1 (ko) * 2016-12-30 2025-01-10 엘지디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04299315A (ja) * 1991-03-28 1992-10-22 Sanyo Electric Co Ltd 液晶表示装置
JP2005303003A (ja) * 2004-04-12 2005-10-27 Kobe Steel Ltd 表示デバイスおよびその製法
JP2006133769A (ja) * 2004-10-26 2006-05-25 Samsung Electronics Co Ltd 薄膜トランジスタ表示板及びその製造方法

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US365601A (en) * 1887-06-28 Boot-upper
US365894A (en) * 1887-07-05 Edmund zoller
US367283A (en) * 1887-07-26 Thomas f
US362199A (en) * 1887-05-03 Thomas buekhaed
US345663A (en) * 1886-07-20 Machine for punching and stitching eyelet-holes
JPH06139844A (ja) * 1992-10-23 1994-05-20 Sharp Corp Ｉｔｏ導電膜およびその製造方法
JP2895700B2 (ja) * 1993-01-20 1999-05-24 シャープ株式会社 アクティブマトリクス表示素子
JP2733006B2 (ja) * 1993-07-27 1998-03-30 株式会社神戸製鋼所 半導体用電極及びその製造方法並びに半導体用電極膜形成用スパッタリングターゲット
US6853083B1 (en) * 1995-03-24 2005-02-08 Semiconductor Energy Laboratory Co., Ltd. Thin film transfer, organic electroluminescence display device and manufacturing method of the same
JP3365954B2 (ja) * 1997-04-14 2003-01-14 株式会社神戸製鋼所 半導体電極用Ａｌ−Ｎｉ−Ｙ 合金薄膜および半導体電極用Ａｌ−Ｎｉ−Ｙ 合金薄膜形成用スパッタリングターゲット
JP4458563B2 (ja) * 1998-03-31 2010-04-28 三菱電機株式会社 薄膜トランジスタの製造方法およびこれを用いた液晶表示装置の製造方法
JP4663829B2 (ja) * 1998-03-31 2011-04-06 三菱電機株式会社 薄膜トランジスタおよび該薄膜トランジスタを用いた液晶表示装置
JP4783525B2 (ja) * 2001-08-31 2011-09-28 株式会社アルバック 薄膜アルミニウム合金及び薄膜アルミニウム合金形成用スパッタリングターゲット
JP3940385B2 (ja) * 2002-12-19 2007-07-04 株式会社神戸製鋼所 表示デバイスおよびその製法
JP2005317676A (ja) * 2004-04-27 2005-11-10 Sony Corp 半導体発光素子、半導体発光装置及び半導体発光素子の製造方法
JP4541787B2 (ja) * 2004-07-06 2010-09-08 株式会社神戸製鋼所 表示デバイス
JP4330517B2 (ja) * 2004-11-02 2009-09-16 株式会社神戸製鋼所 Ｃｕ合金薄膜およびＣｕ合金スパッタリングターゲット並びにフラットパネルディスプレイ
JP4579709B2 (ja) * 2005-02-15 2010-11-10 株式会社神戸製鋼所 Ａｌ−Ｎｉ−希土類元素合金スパッタリングターゲット
JP4117001B2 (ja) * 2005-02-17 2008-07-09 株式会社神戸製鋼所 薄膜トランジスタ基板、表示デバイス、および表示デバイス用のスパッタリングターゲット
JP4542008B2 (ja) * 2005-06-07 2010-09-08 株式会社神戸製鋼所 表示デバイス
US7411298B2 (en) * 2005-08-17 2008-08-12 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Source/drain electrodes, thin-film transistor substrates, manufacture methods thereof, and display devices
US7683370B2 (en) * 2005-08-17 2010-03-23 Kobe Steel, Ltd. Source/drain electrodes, transistor substrates and manufacture methods, thereof, and display devices
US7781767B2 (en) * 2006-05-31 2010-08-24 Kobe Steel, Ltd. Thin film transistor substrate and display device
JP4280277B2 (ja) * 2006-09-28 2009-06-17 株式会社神戸製鋼所 表示デバイスの製法
JP4377906B2 (ja) * 2006-11-20 2009-12-02 株式会社コベルコ科研 Ａｌ−Ｎｉ−Ｌａ系Ａｌ基合金スパッタリングターゲット、およびその製造方法
JP2008127623A (ja) * 2006-11-20 2008-06-05 Kobelco Kaken:Kk Ａｌ基合金スパッタリングターゲットおよびその製造方法
JP2009004518A (ja) * 2007-06-20 2009-01-08 Kobe Steel Ltd 薄膜トランジスタ基板、および表示デバイス
US20090001373A1 (en) * 2007-06-26 2009-01-01 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel Ltd.) Electrode of aluminum-alloy film with low contact resistance, method for production thereof, and display unit
JP2009008770A (ja) * 2007-06-26 2009-01-15 Kobe Steel Ltd 積層構造およびその製造方法
JP2009010052A (ja) * 2007-06-26 2009-01-15 Kobe Steel Ltd 表示装置の製造方法
JP5143649B2 (ja) * 2007-07-24 2013-02-13 株式会社コベルコ科研 Ａｌ−Ｎｉ−Ｌａ−Ｓｉ系Ａｌ合金スパッタリングターゲットおよびその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04299315A (ja) * 1991-03-28 1992-10-22 Sanyo Electric Co Ltd 液晶表示装置
JP2005303003A (ja) * 2004-04-12 2005-10-27 Kobe Steel Ltd 表示デバイスおよびその製法
JP2006133769A (ja) * 2004-10-26 2006-05-25 Samsung Electronics Co Ltd 薄膜トランジスタ表示板及びその製造方法

Also Published As

Publication number Publication date
JP4705062B2 (ja) 2011-06-22
TW200846795A (en) 2008-12-01
US20100032186A1 (en) 2010-02-11
JP2008216490A (ja) 2008-09-18

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