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WO2008105342A1 - Liquide de polissage de métaux et procédé de polissage - Google Patents

Liquide de polissage de métaux et procédé de polissage Download PDF

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Publication number
WO2008105342A1
WO2008105342A1 PCT/JP2008/053065 JP2008053065W WO2008105342A1 WO 2008105342 A1 WO2008105342 A1 WO 2008105342A1 JP 2008053065 W JP2008053065 W JP 2008053065W WO 2008105342 A1 WO2008105342 A1 WO 2008105342A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
metal
polishing liquid
disclosed
abrasive grains
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/053065
Other languages
English (en)
Japanese (ja)
Inventor
Jin Amanokura
Takafumi Sakurada
Sou Anzai
Takashi Shinoda
Shigeru Nobe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to KR1020097016963A priority Critical patent/KR101418626B1/ko
Priority to US12/527,607 priority patent/US8821750B2/en
Priority to CN200880005185.8A priority patent/CN101611476B/zh
Priority to JP2009501221A priority patent/JP5381701B2/ja
Publication of WO2008105342A1 publication Critical patent/WO2008105342A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

L'invention concerne un liquide de polissage de métaux contenant des grains abrasifs, un agent de dissolution d'oxyde métallique et de l'eau. Ce liquide de polissage de métaux est caractérisé par le fait qu'il contient deux types ou plus de grains abrasifs ayant différents diamètres moyens de particule secondaire. L'invention concerne également un procédé de polissage utilisant un tel liquide de polissage de métaux, qui permet de polir un film isolant intercouche à une vitesse de polissage élevée tout en assurant une planéité élevée dans la surface polie. Ce procédé de polissage est approprié pour un dispositif semi-conducteur bas coût, hautement fiable, qui a d'excellentes propriétés de miniaturisation, de réduction d'épaisseur de film, de précision dimensionnelle et d'excellentes caractéristiques électriques.
PCT/JP2008/053065 2007-02-27 2008-02-22 Liquide de polissage de métaux et procédé de polissage Ceased WO2008105342A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020097016963A KR101418626B1 (ko) 2007-02-27 2008-02-22 금속용 연마액 및 연마방법
US12/527,607 US8821750B2 (en) 2007-02-27 2008-02-22 Metal polishing slurry and polishing method
CN200880005185.8A CN101611476B (zh) 2007-02-27 2008-02-22 金属用研磨液以及研磨方法
JP2009501221A JP5381701B2 (ja) 2007-02-27 2008-02-22 金属用研磨液及び研磨方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007047007 2007-02-27
JP2007-047007 2007-02-27
JP2007125840 2007-05-10
JP2007-125840 2007-05-10

Publications (1)

Publication Number Publication Date
WO2008105342A1 true WO2008105342A1 (fr) 2008-09-04

Family

ID=39721177

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/053065 Ceased WO2008105342A1 (fr) 2007-02-27 2008-02-22 Liquide de polissage de métaux et procédé de polissage

Country Status (6)

Country Link
US (1) US8821750B2 (fr)
JP (2) JP5381701B2 (fr)
KR (1) KR101418626B1 (fr)
CN (2) CN101611476B (fr)
TW (1) TWI410469B (fr)
WO (1) WO2008105342A1 (fr)

Cited By (10)

* Cited by examiner, † Cited by third party
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JP2009231486A (ja) * 2008-03-21 2009-10-08 Kao Corp シリコンウエハ用研磨液組成物
JP2010080499A (ja) * 2008-09-24 2010-04-08 Fujifilm Corp 研磨液
JP2010114402A (ja) * 2008-10-07 2010-05-20 Hitachi Chem Co Ltd Ｃｍｐ用研磨液及びこのｃｍｐ用研磨液を用いた研磨方法
JP2012512757A (ja) * 2008-12-20 2012-06-07 キャボット マイクロエレクトロニクス コーポレイション ワイヤーソー切断の間の乾燥性を向上させるための組成物
CN102786879A (zh) * 2012-07-17 2012-11-21 清华大学 钛酸钡化学机械抛光水性组合物及其应用
WO2013069623A1 (fr) * 2011-11-08 2013-05-16 株式会社 フジミインコーポレーテッド Composition de polissage
WO2014061417A1 (fr) * 2012-10-16 2014-04-24 日立化成株式会社 Solution de polissage pour cmp, solution mère, et méthode de polissage
CN104119802A (zh) * 2014-08-06 2014-10-29 江苏天恒纳米科技股份有限公司 一种蓝宝石材料表面超精密加工专用纳米浆料
WO2017002705A1 (fr) * 2015-06-30 2017-01-05 株式会社フジミインコーポレーテッド Composition de polissage
JP2017155242A (ja) * 2013-04-02 2017-09-07 信越化学工業株式会社 コロイダルシリカ研磨材

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WO2010067844A1 (fr) 2008-12-11 2010-06-17 日立化成工業株式会社 Solution de polissage mécanochimique et procédé de polissage associé
WO2011111421A1 (fr) 2010-03-12 2011-09-15 日立化成工業株式会社 Boue, ensemble fluide de polissage, fluide de polissage, et procédé associé de polissage de substrat
JP5648567B2 (ja) * 2010-05-07 2015-01-07 日立化成株式会社 Ｃｍｐ用研磨液及びこれを用いた研磨方法
US9988573B2 (en) 2010-11-22 2018-06-05 Hitachi Chemical Company, Ltd. Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate
CN103409108B (zh) 2010-11-22 2015-04-22 日立化成株式会社 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板
KR101293790B1 (ko) * 2010-12-31 2013-08-06 제일모직주식회사 텅스텐 패턴 웨이퍼 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
US8623766B2 (en) * 2011-09-20 2014-01-07 Cabot Microelectronics Corporation Composition and method for polishing aluminum semiconductor substrates
WO2013077369A1 (fr) * 2011-11-25 2013-05-30 株式会社 フジミインコーポレーテッド Composition de polissage
KR101325343B1 (ko) * 2011-12-29 2013-11-08 주식회사 케이씨텍 연마 제1 입자 및 연마 제2 입자를 포함하는 ｃｍｐ 슬러리 조성물
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SG11201405091TA (en) 2012-02-21 2014-09-26 Hitachi Chemical Co Ltd Polishing agent, polishing agent set, and substrate polishing method
JP6044629B2 (ja) 2012-02-21 2016-12-14 日立化成株式会社 研磨剤、研磨剤セット及び基体の研磨方法
CN104321854B (zh) 2012-05-22 2017-06-20 日立化成株式会社 悬浮液、研磨液套剂、研磨液、基体的研磨方法及基体
JP5943074B2 (ja) 2012-05-22 2016-06-29 日立化成株式会社 スラリー、研磨液セット、研磨液及び基体の研磨方法
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JP6332041B2 (ja) * 2014-01-20 2018-05-30 信越化学工業株式会社 合成石英ガラス基板の製造方法
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US9309442B2 (en) * 2014-03-21 2016-04-12 Cabot Microelectronics Corporation Composition for tungsten buffing
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WO2016032145A1 (fr) * 2014-08-26 2016-03-03 주식회사 케이씨텍 Composition de suspension de polissage
CN106661429B (zh) * 2014-08-26 2019-07-05 凯斯科技股份有限公司 抛光浆料组合物
KR101660384B1 (ko) * 2014-10-30 2016-09-27 주식회사 케이씨텍 연마 슬러리 조성물
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US10077381B2 (en) * 2015-07-20 2018-09-18 Kctech Co., Ltd. Polishing slurry composition
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WO2018147074A1 (fr) * 2017-02-08 2018-08-16 日立化成株式会社 Liquide de polissage et procédé de polissage
CN107236519A (zh) * 2017-05-19 2017-10-10 南通华兴石油仪器有限公司 一种石油仪器用研磨液
US20190153262A1 (en) * 2017-11-20 2019-05-23 Cabot Microelectronics Corporation Composition and method for polishing memory hard disks exhibiting reduced surface scratching
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KR102851125B1 (ko) * 2021-03-31 2025-08-28 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
JP7494799B2 (ja) * 2021-06-01 2024-06-04 信越半導体株式会社 両面研磨方法
KR102620964B1 (ko) * 2021-07-08 2024-01-03 에스케이엔펄스 주식회사 반도체 공정용 연마 조성물 및 이를 이용한 연마된 물품의 제조방법
KR102866377B1 (ko) * 2022-01-28 2025-09-29 삼성에스디아이 주식회사 구리 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 구리 막 연마 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005302973A (ja) * 2004-04-12 2005-10-27 Jsr Corp 化学機械研磨用水系分散体及び化学機械研磨方法
JP2005302974A (ja) * 2004-04-12 2005-10-27 Jsr Corp 化学機械研磨用水系分散体及び化学機械研磨方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4944836A (en) * 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
US4954142A (en) 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
JP3416855B2 (ja) * 1994-04-15 2003-06-16 株式会社フジミインコーポレーテッド 研磨用組成物および研磨方法
JP3397501B2 (ja) 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
US6143662A (en) * 1998-02-18 2000-11-07 Rodel Holdings, Inc. Chemical mechanical polishing composition and method of polishing a substrate
CN1197687C (zh) 1998-06-29 2005-04-20 台湾积体电路制造股份有限公司 化学机械研磨机台
JP4544379B2 (ja) 1999-06-28 2010-09-15 日産化学工業株式会社 ガラス製ハードディスク用研磨剤
US6527817B1 (en) * 1999-11-15 2003-03-04 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
JP3490038B2 (ja) 1999-12-28 2004-01-26 Ｎｅｃエレクトロニクス株式会社 金属配線形成方法
JP2001187878A (ja) * 1999-12-28 2001-07-10 Nec Corp 化学的機械的研磨用スラリー
CN1240797C (zh) 2000-03-31 2006-02-08 拜尔公司 抛光剂和生产平面层的方法
KR100481651B1 (ko) * 2000-08-21 2005-04-08 가부시끼가이샤 도시바 화학 기계 연마용 슬러리 및 반도체 장치의 제조 방법
JP4253141B2 (ja) 2000-08-21 2009-04-08 株式会社東芝 化学機械研磨用スラリおよび半導体装置の製造方法
JP2003113369A (ja) 2001-07-10 2003-04-18 Sumitomo Chem Co Ltd 金属研磨材組成物及び研磨方法
US6638328B1 (en) * 2002-04-25 2003-10-28 Taiwan Semiconductor Manufacturing Co. Ltd Bimodal slurry system
CN100336179C (zh) * 2002-04-30 2007-09-05 日立化成工业株式会社 研磨液及研磨方法
JP2003347248A (ja) 2002-05-28 2003-12-05 Hitachi Chem Co Ltd 半導体絶縁膜用ｃｍｐ研磨剤及び基板の研磨方法
US7470295B2 (en) * 2004-03-12 2008-12-30 K.C. Tech Co., Ltd. Polishing slurry, method of producing same, and method of polishing substrate
JP2005285944A (ja) 2004-03-29 2005-10-13 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法
KR20080022235A (ko) * 2004-04-12 2008-03-10 히다치 가세고교 가부시끼가이샤 금속용 연마액 및 이것을 이용한 연마방법
DE602005023557D1 (de) * 2004-04-12 2010-10-28 Jsr Corp Wässrige Dispersion zum chemisch-mechanischen Polieren und chemisch-mechanisches Polierverfahren
US20070037892A1 (en) * 2004-09-08 2007-02-15 Irina Belov Aqueous slurry containing metallate-modified silica particles
JP2006128552A (ja) 2004-11-01 2006-05-18 Hitachi Chem Co Ltd Ｃｍｐ用研磨液及び研磨方法
JP2006147993A (ja) 2004-11-24 2006-06-08 Hitachi Chem Co Ltd Ｃｍｐ用研磨液及び研磨方法
JP4776269B2 (ja) * 2005-04-28 2011-09-21 株式会社東芝 金属膜ｃｍｐ用スラリー、および半導体装置の製造方法
TWI271555B (en) * 2005-06-13 2007-01-21 Basf Ag Slurry composition for polishing color filter
JP2007012679A (ja) 2005-06-28 2007-01-18 Asahi Glass Co Ltd 研磨剤および半導体集積回路装置の製造方法
JP2007103463A (ja) * 2005-09-30 2007-04-19 Sumitomo Electric Ind Ltd ポリシングスラリー、ＧａｘＩｎ１−ｘＡｓｙＰ１−ｙ結晶の表面処理方法およびＧａｘＩｎ１−ｘＡｓｙＰ１−ｙ結晶基板
WO2010052983A1 (fr) * 2008-11-10 2010-05-14 旭硝子株式会社 Composition abrasive et procédé de fabrication d'un dispositif à circuit intégré semi-conducteur

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005302973A (ja) * 2004-04-12 2005-10-27 Jsr Corp 化学機械研磨用水系分散体及び化学機械研磨方法
JP2005302974A (ja) * 2004-04-12 2005-10-27 Jsr Corp 化学機械研磨用水系分散体及び化学機械研磨方法

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009231486A (ja) * 2008-03-21 2009-10-08 Kao Corp シリコンウエハ用研磨液組成物
JP2010080499A (ja) * 2008-09-24 2010-04-08 Fujifilm Corp 研磨液
JP2010114402A (ja) * 2008-10-07 2010-05-20 Hitachi Chem Co Ltd Ｃｍｐ用研磨液及びこのｃｍｐ用研磨液を用いた研磨方法
JP2012512757A (ja) * 2008-12-20 2012-06-07 キャボット マイクロエレクトロニクス コーポレイション ワイヤーソー切断の間の乾燥性を向上させるための組成物
JPWO2013069623A1 (ja) * 2011-11-08 2015-04-02 株式会社フジミインコーポレーテッド 研磨用組成物
WO2013069623A1 (fr) * 2011-11-08 2013-05-16 株式会社 フジミインコーポレーテッド Composition de polissage
RU2620836C2 (ru) * 2011-11-08 2017-05-30 Фудзими Инкорпорейтед Полирующий состав
CN102786879A (zh) * 2012-07-17 2012-11-21 清华大学 钛酸钡化学机械抛光水性组合物及其应用
WO2014061417A1 (fr) * 2012-10-16 2014-04-24 日立化成株式会社 Solution de polissage pour cmp, solution mère, et méthode de polissage
JP2017155242A (ja) * 2013-04-02 2017-09-07 信越化学工業株式会社 コロイダルシリカ研磨材
CN104119802B (zh) * 2014-08-06 2015-09-02 江苏天恒纳米科技股份有限公司 一种蓝宝石材料表面超精密加工专用纳米浆料
CN104119802A (zh) * 2014-08-06 2014-10-29 江苏天恒纳米科技股份有限公司 一种蓝宝石材料表面超精密加工专用纳米浆料
WO2017002705A1 (fr) * 2015-06-30 2017-01-05 株式会社フジミインコーポレーテッド Composition de polissage
JP2017014362A (ja) * 2015-06-30 2017-01-19 株式会社フジミインコーポレーテッド 研磨用組成物

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KR20090128389A (ko) 2009-12-15
CN102690607A (zh) 2012-09-26
JP5533951B2 (ja) 2014-06-25
CN101611476A (zh) 2009-12-23
JPWO2008105342A1 (ja) 2010-06-03
US20100120250A1 (en) 2010-05-13
KR101418626B1 (ko) 2014-07-14
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TW200918622A (en) 2009-05-01
CN101611476B (zh) 2015-11-25

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