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WO2008104106A1 - A method of producing white light and a white light led obtained by using such producing method - Google Patents

A method of producing white light and a white light led obtained by using such producing method Download PDF

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Publication number
WO2008104106A1
WO2008104106A1 PCT/CN2007/001750 CN2007001750W WO2008104106A1 WO 2008104106 A1 WO2008104106 A1 WO 2008104106A1 CN 2007001750 W CN2007001750 W CN 2007001750W WO 2008104106 A1 WO2008104106 A1 WO 2008104106A1
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Prior art keywords
light
led
wavelength
led element
white
Prior art date
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Ceased
Application number
PCT/CN2007/001750
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French (fr)
Chinese (zh)
Inventor
Ben Fan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Heshan Lide Electronic Enterprise Co Ltd
Original Assignee
Heshan Lide Electronic Enterprise Co Ltd
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Filing date
Publication date
Priority claimed from CNA2007100270320A external-priority patent/CN101022102A/en
Priority claimed from CNA2007100273189A external-priority patent/CN101060151A/en
Application filed by Heshan Lide Electronic Enterprise Co Ltd filed Critical Heshan Lide Electronic Enterprise Co Ltd
Publication of WO2008104106A1 publication Critical patent/WO2008104106A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means

Definitions

  • the present invention relates to a method of synthesizing white light, and more particularly to a method of synthesizing white light using LEDs.
  • the present invention relates to a luminaire, and more particularly to a white LED. Background technique
  • LED from English LIGHT EMITTING DIODE abbreviation, meaning LED.
  • the simplest structure of a light-emitting diode includes a P-type semiconductor, an N-type semiconductor, and a PN junction formed therebetween. When a current is passed through the diode, at the PN junction, charge carriers are generated, that is, electrons and Holes, electrons and holes combine to release energy in the form of photons. Adding specific semiconductor chemicals at the PN junction allows the diode to emit light of a specific color, such as adding indium gallium nitride (lnO.2GaO.8N).
  • the pure first wavelength light B can be generated, and the second wavelength light G or the like can be generated by adding gallium nitride (GaN), and the LEDs are packaged and the positive and negative poles of the light emitting diode are taken out from the package body to connect the power source to form the LED lamp.
  • GaN gallium nitride
  • LED lamps Compared with ordinary white lamps such as tungsten lamps and fluorescent lamps, LED lamps have the advantages of long life, power saving, durability, reliability, fast response, low waste heat and suitable for mass production. '
  • the colored 'LED light makes the object look color, not as the white light can truly reflect the color of the object, so the development of high-quality white LED lights suitable for general lighting applications, It has always been the goal pursued by the industry peers.
  • the white light emitted by the LED lamp firstly causes the LED to generate light of several different wavelengths, and then uses the principle of the lens to mix several different wavelengths of light according to a certain intensity ratio, for example, using the first wavelength.
  • Light B and yellow light are mixed into white light, or mixed with red, green and blue light to form white light.
  • LED lights can produce white light -
  • the red, green and blue light-emitting diodes are packaged in a light bulb, and the external circuit is used to adjust the power of the three primary color light-emitting diodes, so that white light can be mixed.
  • the LED light of this structure needs to be separately for three light-emitting diodes.
  • the power is independently controlled, which makes the design of the peripheral circuit very complicated and costly.
  • the yellow phosphor is covered outside the two light emitting diodes, and the first wavelength light B emitted by the first wavelength light B diode is irradiated onto the yellow phosphor, part of The first wavelength light B passes through the yellow phosphor, and a portion remains in the phosphor to excite the yellow light,
  • the third wavelength light R emitted by the one-wavelength light B, the yellow light, and the third-wavelength light R diode is mixed into white light.
  • the LED lamp of this structure since the operating voltages required by both the first wavelength light B and the third wavelength light R diode are large, if the two are connected in series, a higher total voltage is required, which is disadvantageous for use; If parallel is used, it is necessary to series resistors on one of the diodes, which increases the complexity of the process and increases the cost of the product.
  • the red, green and blue phosphors are covered on the outside of the LED, and the red, green and blue phosphors are used to form red, green and blue light to form white light. Because the ultraviolet light excites the red, green and blue phosphors, it will release a relatively large amount of energy, which promotes the aging of the phosphor and reduces the life of the product. More seriously, the ultraviolet light excites the red, green and blue phosphors. It will release substances harmful to the human body. Summary of the invention
  • One technical problem to be solved by the present invention is to provide a method of synthesizing white light which can be realized by a device which is inexpensive, simple in structure, long in life, and environmentally friendly.
  • Another technical problem to be solved by the present invention is to provide an LED using the above method.
  • the first LED element emits a first wavelength light having a peak wavelength of 430 to 480 nm
  • the second LED element emits a second wavelength light having a peak wavelength of 510 to 555 nm
  • the phosphor absorbs part of the first wavelength light and a second portion.
  • the wavelength light excites the third wavelength light having a peak wavelength of '600 to 630 nm
  • the third wavelength light is mixed with the unabsorbed portion of the first wavelength light and the unabsorbed portion of the second wavelength light to form white light.
  • a white LED of the present invention the technical problem is solved by the following technical solutions: a white LED, the outer casing is an encapsulant, an electrode holder is arranged in the encapsulant, and the first LED component is mounted on the electrode holder. And a second LED element, the first LED element and the second LED element are covered with a phosphor that can be excited by the light emitted by the first and second LED elements, and the first LED element has an emission peak wavelength of 430. ⁇ 480 nm, the second LED : the luminescence peak wavelength of the element is 510 to 555 nm, and the peak wavelength of the excited light of the phosphor is 600 to 630 nm.
  • the beneficial effects of the invention are: using only two blue and green wafers, saving cost compared with LED lamps using three wafers, simplifying the control circuit; using blue second wavelength light G to excite phosphors, mixed white light Containing red, green and blue primary colors, the white spot quality is good; the excitation energy is low, it will not produce harmful substances to the human body, and it is healthy and environmentally friendly.
  • the first LED element has an emission peak wavelength of 450 to 480 nm.
  • the second LED element emits a peak wavelength of 510-540 nm diode chip.
  • the phosphor has a peak wavelength of 610 to 620.
  • Figure 1 is a schematic view of the structure of the present invention
  • FIG. 2 is a schematic view showing the connection relationship between the lamp pin and the LED element of the present invention
  • Figure 3 is a second schematic view of the structure of the present invention.
  • Figure 4 is a third schematic view of the structure of the present invention.
  • Figure 5 is a fourth schematic view of the structure of the present invention.
  • Figure 6 is a schematic view of the light mixing principle of the present invention.
  • Figure 7 is a diagram showing the emission spectrum of white light emitted by the present invention.
  • a white LED is mounted on the package body 1 , and a two-electrode holder 2 connected to a power source is disposed in the encapsulant 1 , and the encapsulant 1 is electrically connected to the two-electrode holder 2 .
  • a first LED element 4 and a second LED element 5 are covered with a phosphor 6; the first LED element has an emission peak wavelength of 430 to 480 nm, and the wavelength band The light is also called blue light in the industry.
  • first wavelength light B In order to facilitate the difference, in the present invention, it is referred to as a first wavelength light B; the second LED element has an emission peak wavelength of 510 to 555 nm, and the light in the band is also an industry.
  • the green light referred to in the present invention is referred to as a second wavelength light G in the present invention; the phosphor 6 absorbs a portion of the first wavelength light B and the second wavelength light G to excite a peak.
  • the wavelength is 600 ⁇
  • the light of 630 nm, which is also called red light in the industry, is referred to as the third wavelength light R in the present invention for the sake of distinction.
  • the present invention contains red, green and blue primary colors, and the light color rendering properties of the visible light bands are relatively good.
  • the intensity of the first wavelength light B and the second wavelength light G can be adjusted by the control circuit, and white light or pure white light biased to a certain chromaticity can also be called.
  • This technique does not require a creative experiment for those skilled in the art. It can be easily implemented, so it will not be described here. ⁇ '
  • the first LED element 4 that emits the first wavelength light B having a peak wavelength range of 450 nm to 480 nm is selected, and the second LED element 5 that emits the second wavelength light G has a peak wavelength range of 3 ⁇ 4 510 ⁇ 11 to 540 ⁇ 11.
  • the white light which can be mixed with the phosphor 6 which excites the third wavelength light W having a peak wavelength range of 600 to 630 nm tends to be more white, and the spot is more uniform. : ⁇
  • the first LED element 4 and the second LED element 5 may be directly connected to the electrode holder 2, or may be welded or directly punched out at the top end of the electrode holder 2, the first An LED element 4 and a second LED element 5 are placed in the cup body 21, and then electrically connected to the electrode holder 2 by the gold wire 3, which can enhance the integration of the electrode holder 2 and the LED element '4, and is effective.
  • the roles of the first LED element 4 and the second LED element fr 5 are protected.
  • the first LED element 4 and the second LED element 5 may be electrically connected in series or in parallel.
  • the cup body 21 ⁇ can be designed in a trumpet shape, and then a reflective material is disposed on the inner wall of the cup body 21, or the inner wall of the cup body 21 is directly smoothed to have a reflective function, so that the cup body 21 constitutes a collecting cup, which can make Light energy is concentrated in one direction.
  • the phosphor 5 is injected into the cup body 21 to cover the ⁇ ED element 4, and then packaged.
  • the phosphor 5 may be pre-mixed into the encapsulant, and when the LED element 4 and the electrode holder 2 are packaged, the phosphor 5 is dispersed and packaged.
  • the LED element 4 is coated with the encapsulant 1 in the colloid 1, as shown in FIG.
  • the light emitted by the present invention can be made to have different directions by changing the structure of the top end 11 of the encapsulant 1.
  • the top end 11 of the encapsulant 1 when the top end 11 of the encapsulant 1 is designed in a circular arc shape, the light emitted by the point source in the encapsulant 1 is refracted by the arc-shaped top end 11 to obtain parallel light;
  • the top end 11 of the encapsulant 1 when the top end 11 of the encapsulant 1 is designed to be concave, the light emitted by the point source in the encapsulant 1 is refracted by the concave top end 11 to obtain divergent light; as shown in FIG.
  • the top end 11 of the encapsulant 1 is designed to be flat, the light emitted by the point source in the encapsulant 1 is refracted by the inner tip 11 to obtain a certain degree of divergent light.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)

Abstract

A method of producing white light and a white light LED obtained by using such producing method are provided. The white light LED comprises a first LED element (4), a second LED element (5), and fluorescent powder (6) activated by light emitted by said first LED element and said second LED element. The peak wavelength of said first LED element (4) is within the range of 430~480nm, the peak wavelength of said second LED element (5) is within the range of 510~555nm, and the activated peak wavelength of the fluorescent powder (6) is within the range of 600~630nm.

Description

001750  001750

一种合成白光的方法和采用该方法的白光 LED 技术领域 Method for synthesizing white light and white light LED using the same

本发明涉及一种合成白光的方法，特别涉及一种利用 LED合成白光的方法。 本发明涉及还涉及一种灯具， 特别涉及一种白光 LED。 背景技术  The present invention relates to a method of synthesizing white light, and more particularly to a method of synthesizing white light using LEDs. The present invention relates to a luminaire, and more particularly to a white LED. Background technique

LED来自英文 LIGHT EMITTING DIODE的缩写，意为发光二极管。最简单 的发光二极管的结构包括， P-型半导体、 N-型半导体及两者之间所形成的 PN结， 当电流通过二极管时， 在上述 PN结处， 便产生电荷载子， 即电子与空穴， 电子 与空穴结合并以光子的形式释放出能量， 在 PN结处加入特定的半导体化学物， 则可使二极管发出特定颜色的光， 如加入氮化铟镓（lnO.2GaO.8N)可产生纯第 一波长光 B， 加入氮化镓（GaN)可产生第二波长光 G等， 将发光二极管封装 并从封装体内引出发光二极管的正负两极以连接电源即构成 LED灯。 与普通的 钨丝灯， 荧光灯等白光灯相比， LED灯有寿命长、 省电、 耐用、 牢靠、 反应快、 低废热和适合于批量生产等优点。 '  LED from English LIGHT EMITTING DIODE abbreviation, meaning LED. The simplest structure of a light-emitting diode includes a P-type semiconductor, an N-type semiconductor, and a PN junction formed therebetween. When a current is passed through the diode, at the PN junction, charge carriers are generated, that is, electrons and Holes, electrons and holes combine to release energy in the form of photons. Adding specific semiconductor chemicals at the PN junction allows the diode to emit light of a specific color, such as adding indium gallium nitride (lnO.2GaO.8N). The pure first wavelength light B can be generated, and the second wavelength light G or the like can be generated by adding gallium nitride (GaN), and the LEDs are packaged and the positive and negative poles of the light emitting diode are taken out from the package body to connect the power source to form the LED lamp. Compared with ordinary white lamps such as tungsten lamps and fluorescent lamps, LED lamps have the advantages of long life, power saving, durability, reliability, fast response, low waste heat and suitable for mass production. '

但是，在普通的照明场合，有颜色的' LED灯光却会使物体看起来变了颜色， 不如白光灯能真实反映物体的颜色，因此开发出适于普通照明场合使用的优质的 白光 LED灯， 一直是业内同行追求的目标。 在现有技术中， LED灯所发出的 白光是先使 LED产生几种不同波长的光， 再利用透镜的原理将几种波长不同的 光按一定的强度比例混合而成， 例如用第一波长光 B与黄光混成白光， 或用红、 绿、 蓝三色光混成白光。 具体来说， LED灯产生白光可以有以下几种方法- However, in ordinary lighting occasions, the colored 'LED light makes the object look color, not as the white light can truly reflect the color of the object, so the development of high-quality white LED lights suitable for general lighting applications, It has always been the goal pursued by the industry peers. In the prior art, the white light emitted by the LED lamp firstly causes the LED to generate light of several different wavelengths, and then uses the principle of the lens to mix several different wavelengths of light according to a certain intensity ratio, for example, using the first wavelength. Light B and yellow light are mixed into white light, or mixed with red, green and blue light to form white light. Specifically, there are several ways in which LED lights can produce white light -

1、 将红、 绿、 蓝三基色发光二极管封装在一个灯泡内， 外加电路调整三基 色发光二极管的功率， 即可混出白光， 采用这种结构 '的 LED灯需要分别对三个发 光二极管的功率进行独立控制，这样就使得外围电路的设计非常复杂，成本极髙。 1. The red, green and blue light-emitting diodes are packaged in a light bulb, and the external circuit is used to adjust the power of the three primary color light-emitting diodes, so that white light can be mixed. The LED light of this structure needs to be separately for three light-emitting diodes. The power is independently controlled, which makes the design of the peripheral circuit very complicated and costly.

2、使用第一波长光 B和第三波长光 R二极管， '然后在两发光二极管外覆盖 黄色荧光粉，第一波长光 B二极管发出的第一波长光 B照射到黄色荧光粉上后， 一部分第一波长光 B 穿过黄色荧光粉， 一部分留在荧光粉内激发黄光， 所述第  2. Using the first wavelength light B and the third wavelength light R diode, 'then the yellow phosphor is covered outside the two light emitting diodes, and the first wavelength light B emitted by the first wavelength light B diode is irradiated onto the yellow phosphor, part of The first wavelength light B passes through the yellow phosphor, and a portion remains in the phosphor to excite the yellow light,

确认本 一波长光 B、 黄光和第三波长光 R二极管发出的第三波长光 R混合成白光。 采 用这种结构的 LED灯， 由于第一波长光 B和第三波长光 R二极管两者所需的工 作电压差别较大， 若两者用串联连接则需要较高的总电压， 不利于使用； 若用并 联则需要在其中一个二极管上串联电阻，这样就增加了制程工艺复杂程度，增加 产品成本。 Confirmation The third wavelength light R emitted by the one-wavelength light B, the yellow light, and the third-wavelength light R diode is mixed into white light. With the LED lamp of this structure, since the operating voltages required by both the first wavelength light B and the third wavelength light R diode are large, if the two are connected in series, a higher total voltage is required, which is disadvantageous for use; If parallel is used, it is necessary to series resistors on one of the diodes, which increases the complexity of the process and increases the cost of the product.

3、 使用一个发紫外线二极管， 在该发光二极管外覆盖红、 绿、 蓝三色荧光 粉， 利用紫外线照射到红、绿、蓝三色荧光粉上产生红、 绿、蓝三色光混合成白 光， 由于紫外线激发红、绿、蓝三色荧光粉后会放出比较大的能量， 促进了荧光 粉的老化， 降低产品的寿命， 更为严重的是紫外线激发红、 绿、蓝三色荧光粉后 还会释放出对人体有害的物质。 发明内容  3. Using a UV-emitting diode, the red, green and blue phosphors are covered on the outside of the LED, and the red, green and blue phosphors are used to form red, green and blue light to form white light. Because the ultraviolet light excites the red, green and blue phosphors, it will release a relatively large amount of energy, which promotes the aging of the phosphor and reduces the life of the product. More seriously, the ultraviolet light excites the red, green and blue phosphors. It will release substances harmful to the human body. Summary of the invention

本发明要解决的一个技术问题是：提供一种合成白光的方法，其可以使用成 本低廉， 结构简单， 寿命长且环保健康的装置来实现。  One technical problem to be solved by the present invention is to provide a method of synthesizing white light which can be realized by a device which is inexpensive, simple in structure, long in life, and environmentally friendly.

本发明要解决的另一个技术问题是： 提供采用上述方法的 LED。  Another technical problem to be solved by the present invention is to provide an LED using the above method.

对于本发明一种合成白光的方法来说，其技术问题是通过下述技术方案来解 决的：  For a method for synthesizing white light of the present invention, the technical problem is solved by the following technical solutions:

先由第一 LED元件发出峰值波长为 430~480nm的第一波长光， 第二 LED 元件发出峰值波长为 510~555nm的第二波长光； 再用荧光粉吸收部分第一波长 光和部分第二波长光并激发出第三波长光， 其峰值波长为 '600~630nm; 所述第 三波长光与第一波长光的未被吸收部分和第二波长光的未被吸收部分混合成白 光。 First, the first LED element emits a first wavelength light having a peak wavelength of 430 to 480 nm, and the second LED element emits a second wavelength light having a peak wavelength of 510 to 555 nm; and the phosphor absorbs part of the first wavelength light and a second portion. The wavelength light excites the third wavelength light having a peak wavelength of '600 to 630 nm ; and the third wavelength light is mixed with the unabsorbed portion of the first wavelength light and the unabsorbed portion of the second wavelength light to form white light.

对于本发明一种白光 LED来说，其技术问題是通过下述技术方案来解决的： —种白光 LED, 外壳为封装胶体， 封装胶体内设有电极支架， 电极支架上 安装有第一 LED元件和第二 LED元件，所述第一 LED元件和第二 LED元件外 覆盖有可受该第一、第二 LED元件所发的光激发的荧光粉， 述第一 LED元件 的发光峰值波长为 430〜480nm， 所述第二 LED :元件的发光峰值波长为 510〜 555nm, 所述荧光粉的受激发光峰值波长为 600〜630nm。 本发明的有益效果是： 仅使用了蓝绿两颗晶片， 与使用三颗晶片的 LED灯 相比节省了成本， 简化了控制电路； 使用蓝第二波长光 G激发荧光粉， 混和的 白光中含红绿蓝三基色， 白光光斑质量好； 激发能量较低， 不会产生对人体有害 物质， 健康环保。 For a white LED of the present invention, the technical problem is solved by the following technical solutions: a white LED, the outer casing is an encapsulant, an electrode holder is arranged in the encapsulant, and the first LED component is mounted on the electrode holder. And a second LED element, the first LED element and the second LED element are covered with a phosphor that can be excited by the light emitted by the first and second LED elements, and the first LED element has an emission peak wavelength of 430. 〜480 nm, the second LED : the luminescence peak wavelength of the element is 510 to 555 nm, and the peak wavelength of the excited light of the phosphor is 600 to 630 nm. The beneficial effects of the invention are: using only two blue and green wafers, saving cost compared with LED lamps using three wafers, simplifying the control circuit; using blue second wavelength light G to excite phosphors, mixed white light Containing red, green and blue primary colors, the white spot quality is good; the excitation energy is low, it will not produce harmful substances to the human body, and it is healthy and environmentally friendly.

此外， 本发明还可以通过以下技术方案做进一步改进：  In addition, the present invention can be further improved by the following technical solutions:

所述第一 LED元件的发光峰值波长为 450~480nm。  The first LED element has an emission peak wavelength of 450 to 480 nm.

所述第二 LED元件发光峰值波长为 510~540nm二极管晶片。  The second LED element emits a peak wavelength of 510-540 nm diode chip.

所述所述荧光粉的受激光发峰值波长为 610~620。 附图说明  The phosphor has a peak wavelength of 610 to 620. DRAWINGS

下面结合附图和实施例对本发明做进一步说明，  The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

图 1是本发明的结构示意图之一；  Figure 1 is a schematic view of the structure of the present invention;

图 2是本发明灯脚与 LED元件的连接关系示意图；  2 is a schematic view showing the connection relationship between the lamp pin and the LED element of the present invention;

图 3是本发明的结构示意图之二；  Figure 3 is a second schematic view of the structure of the present invention;

图 4是本发明的结构示意图之三；  Figure 4 is a third schematic view of the structure of the present invention;

图 5是本发明的结构示意图之四；  Figure 5 is a fourth schematic view of the structure of the present invention;

图 6是本发明混光原理示意图；  Figure 6 is a schematic view of the light mixing principle of the present invention;

图 7本发明所发出白光的发射频谱图 具体实施方式 ' '  Figure 7 is a diagram showing the emission spectrum of white light emitted by the present invention.

参考图 1， 图 2， 一种白光 LED, 其外壳为封装胶体 1， 封装胶体 1内引出 有连接电源的两电极支架 2，所述封装胶体 1内设置有与所述两电极支架 2电连 接的第一 LED元件 4和第二 LED元件 5， 该第一 LED元件 4和第二 LED元件 5外覆盖有荧光粉 6;所述第一 LED元件的发光峰值波长为 430〜480nm,该波 段的光也就是行业内所称的蓝光， 为便于区别， 本发明中， 姑且称之为第一波长 光 B; 所述第二 LED元件的发光峰值波长为 510〜555nm， 该波段的光也就是 行业内所称的绿光， 为便于区别， 本发明中， 姑且称之为第二波长光 G; 所述荧 光粉 6吸收部分所述第一波长光 B和第二波长光 G后，激发出峰值波长为 600〜 630nm 的光， 该波段的光也就是行业内所称的红光， 为便于区别， 本发明中， 姑且称之为第三波长光 R。 Referring to FIG. 1 and FIG. 2 , a white LED is mounted on the package body 1 , and a two-electrode holder 2 connected to a power source is disposed in the encapsulant 1 , and the encapsulant 1 is electrically connected to the two-electrode holder 2 . a first LED element 4 and a second LED element 5, the first LED element 4 and the second LED element 5 are covered with a phosphor 6; the first LED element has an emission peak wavelength of 430 to 480 nm, and the wavelength band The light is also called blue light in the industry. In order to facilitate the difference, in the present invention, it is referred to as a first wavelength light B; the second LED element has an emission peak wavelength of 510 to 555 nm, and the light in the band is also an industry. The green light referred to in the present invention is referred to as a second wavelength light G in the present invention; the phosphor 6 absorbs a portion of the first wavelength light B and the second wavelength light G to excite a peak. The wavelength is 600~ The light of 630 nm, which is also called red light in the industry, is referred to as the third wavelength light R in the present invention for the sake of distinction.

参见图 6，两电极支架 2接通电源后，电流通过第一 LED元件 4和第二 LED 元件 5， 发出第一波长光 B和第二波长光 G， 部分第一波长光 B、第二波长光 G 穿过荧光粉 6，部分第一波长光 B、第二波长光 G被荧光粉 6吸收激发出第三波 长光 R， 根据红绿蓝三色的混色原理知， 该第三波长光 R与穿过荧光粉 6的第 一波长光 B和第二波长光 G混合即可得到白光。 该白光的发射频谱图见图 7， 由图中可以看出，本发明含红绿蓝三基色，'对可见光各波段的光显色性都比较好。 此外， 通过控制电路来调整第一波长光 B和第二波长光 G的强度， 还可以调出 偏向某种色度的白光或纯白光，该技术对本领域的技术人员来说不需要创造性的 实验就可以轻松实现， 故不在此赘述。 · '  Referring to FIG. 6, after the two electrode holders 2 are powered on, current passes through the first LED element 4 and the second LED element 5, and emits first wavelength light B and second wavelength light G, part of the first wavelength light B, and the second wavelength. The light G passes through the phosphor 6, and part of the first wavelength light B and the second wavelength light G are absorbed by the phosphor 6 to excite the third wavelength light R. According to the color mixing principle of the red, green and blue colors, the third wavelength light R White light is obtained by mixing with the first wavelength light B and the second wavelength light G passing through the phosphor 6. The emission spectrum of the white light is shown in Fig. 7. As can be seen from the figure, the present invention contains red, green and blue primary colors, and the light color rendering properties of the visible light bands are relatively good. In addition, the intensity of the first wavelength light B and the second wavelength light G can be adjusted by the control circuit, and white light or pure white light biased to a certain chromaticity can also be called. This technique does not require a creative experiment for those skilled in the art. It can be easily implemented, so it will not be described here. · '

本发明中， 选取发出第一波长光 B的峰值波长范围为 450nm~480nm的第 — LED元件 4，发出第二波长光 G的峰值波长范围¾ 510^11~540^11的第二 LED 元件 5和激发第三波长光 W的峰值波长范围为 600~630nm的荧光粉 6可以混 合成的白光更趋向于正白， 光斑较均匀。 ： ··  In the present invention, the first LED element 4 that emits the first wavelength light B having a peak wavelength range of 450 nm to 480 nm is selected, and the second LED element 5 that emits the second wavelength light G has a peak wavelength range of 3⁄4 510^11 to 540^11. The white light which can be mixed with the phosphor 6 which excites the third wavelength light W having a peak wavelength range of 600 to 630 nm tends to be more white, and the spot is more uniform. : ··

参考图 1和图 2，所述第一 LED元件 4和第二 LED元件 5可以直接与电极 支架 2电连接， 也可以在电极支架 2的顶端焊接或直接冲压出一个杯体 21， 所 述第一 LED元件 4和第二 LED元件 5放置在所述杯体 21内， 再用金线 3与电 极支架 2电连接， 这样可以增强电极支架 2与 LED元件' 4的一体性， 起到有效 的保护第一 LED元件 4和第二 LED元 fr 5的作用。  Referring to FIG. 1 and FIG. 2, the first LED element 4 and the second LED element 5 may be directly connected to the electrode holder 2, or may be welded or directly punched out at the top end of the electrode holder 2, the first An LED element 4 and a second LED element 5 are placed in the cup body 21, and then electrically connected to the electrode holder 2 by the gold wire 3, which can enhance the integration of the electrode holder 2 and the LED element '4, and is effective. The roles of the first LED element 4 and the second LED element fr 5 are protected.

所述第一 LED元件 4和第二 LED元件 5可以串联电连接，也可以并联电连 接。  The first LED element 4 and the second LED element 5 may be electrically connected in series or in parallel.

所述杯体 21·可以设计成喇叭状， 然后在杯体 21 内壁上设置反光材料， 或 直接将杯体 21 内壁打磨光滑至具有反光功能， 从而使杯体 21构成聚光杯， 这 样可以使得光能集中在一个方向射出。  The cup body 21· can be designed in a trumpet shape, and then a reflective material is disposed on the inner wall of the cup body 21, or the inner wall of the cup body 21 is directly smoothed to have a reflective function, so that the cup body 21 constitutes a collecting cup, which can make Light energy is concentrated in one direction.

在上述 LED元件 4放置在所述杯体 21中后， 可紧跟着往杯体 21内注入荧 光粉 5覆盖丄 ED元件 4, 然后再封装。 当然， 也可以将所述荧光粉 5预先混入 封装胶液中， 在 LED元件 4与电极支架 2与被封装时， 荧光粉 5就会分散封装 胶体 l中与封装胶体 1一起包覆所述 LED元件 4， 如图 5所示。 After the LED element 4 is placed in the cup body 21, the phosphor 5 is injected into the cup body 21 to cover the 丄 ED element 4, and then packaged. Of course, the phosphor 5 may be pre-mixed into the encapsulant, and when the LED element 4 and the electrode holder 2 are packaged, the phosphor 5 is dispersed and packaged. The LED element 4 is coated with the encapsulant 1 in the colloid 1, as shown in FIG.

此外， 通过改变封装胶体 1顶端 11的结构还可以使本发明发出的光具有不 同的方向。 例如， 如图 1所示， 将所述封装胶体 1的顶端 11设计成圆弧状时， 封装胶体 1内点光源发射的光经该圆弧状的顶端 11折射后可获得平行光； 又如 图 3所示， 当所述封装胶体 1的顶端 11设计成内凹状时， 封装胶体 1内点光源 发射的光经该内凹状的顶端 11折射后可获得发散光；如图 4所示 ，所述封装胶 体 1的顶端 11设计成平头时，封装胶体 1内点光源发射的光经该内平头顶端 11 折射后可获得一定程度的发散光。  Furthermore, the light emitted by the present invention can be made to have different directions by changing the structure of the top end 11 of the encapsulant 1. For example, as shown in FIG. 1, when the top end 11 of the encapsulant 1 is designed in a circular arc shape, the light emitted by the point source in the encapsulant 1 is refracted by the arc-shaped top end 11 to obtain parallel light; As shown in FIG. 3, when the top end 11 of the encapsulant 1 is designed to be concave, the light emitted by the point source in the encapsulant 1 is refracted by the concave top end 11 to obtain divergent light; as shown in FIG. When the top end 11 of the encapsulant 1 is designed to be flat, the light emitted by the point source in the encapsulant 1 is refracted by the inner tip 11 to obtain a certain degree of divergent light.

Claims

权利要求 Rights request 1、 一种合成白光的方法， 其特征在于： 先由第一 LED元件（4) 发出 峰值波长为 430~480nm的第一波长光 （B)， 第二 LED元件 （5) 发出峰值波长 为 510〜555nm的第二波长光（G); 再用荧光粉 （6) 吸收部分第一波长光 （B) 和部分第二波长光 （R) 并激发出第三波长光 （R), 其峰值波长为 600~630nm; 所述第三波长光（R)与第一波长光（B)的未被吸收部分和第二波长光（G) 的 未被吸收部分混合成白光。 A method for synthesizing white light, characterized in that: first light (B) having a peak wavelength of 430 to 480 nm is emitted from a first LED element (4), and a peak wavelength of 510 is emitted by a second LED element (5). a second wavelength light (G) of 555 nm; a phosphor (6) is used to absorb a portion of the first wavelength light (B) and a portion of the second wavelength light (R) and excite a third wavelength light (R) having a peak wavelength It is 600 to 630 nm; the third wavelength light (R) is mixed with the unabsorbed portion of the first wavelength light (B) and the unabsorbed portion of the second wavelength light (G) into white light. 2、 根据权利要求 1所述的一种合成白光的方法， 其特征在于： 所述一 波长光 （B) 的峰值波长的范围为 450~480nm。  2. A method of synthesizing white light according to claim 1, wherein: said one wavelength light (B) has a peak wavelength in the range of 450 to 480 nm. 3、 根据权利要求' 1所述的一种合成白光的方法， 其特征在于： 所述第 二波长光 （G) 的峰值波长的范围为 510〜540nm。 ' + : 3. A method of synthesizing white light according to claim 1, wherein the peak wavelength of the second wavelength light (G) ranges from 510 to 540 nm. ' + : 4、 根据权利要求 1所述的一种合成白光的方法， 其特征在于： 所述第 三波长光 （R) 的峰值波长的范围为 610~620nm。  4. A method of synthesizing white light according to claim 1, wherein: said third wavelength light (R) has a peak wavelength in the range of 610 to 620 nm. 5、 · 一种采用权利要求 1所述方法的白光 LED, 外壳为封装胶体 （1 )， 封装胶体（1 内设有电极支架（2), 电极支架（2)上安装有第一 LED元件（4) 和第二 LED元件（5)， 所述第一 LED元件（4)和第二 LED元件 （5) 外覆盖 有可受该第一、 第二 LED元件 （4、 5)所发的光激发的荧光粉 （6)， 其特征在 于： 所述第一 LEI 元件（4)的发光峰值波长为 430〜480nm， 所述第二 LED元 件（5) 的发光峰值波长为 510〜555nm， 所述荧光粉'（6) 的受激发光峰值波长 为 600~630nm。 '  5. A white LED according to the method of claim 1, wherein the outer casing is an encapsulant (1), the encapsulant (1 is provided with an electrode holder (2), and the electrode holder (2) is mounted with a first LED element ( 4) and a second LED element (5), the first LED element (4) and the second LED element (5) are covered with light that can be emitted by the first and second LED elements (4, 5) The excited phosphor (6) is characterized in that: the first LEI element (4) has an emission peak wavelength of 430 to 480 nm, and the second LED element (5) has an emission peak wavelength of 510 to 555 nm. The peak wavelength of the excited light of the phosphor '(6) is 600~630nm.' 6、 根据权利要求 5所述的一种白光 LED， 其特征在于： 所述第一 LED 元件（4) 的发光峰值波长为 ·450~480ηιη。  6. A white light LED according to claim 5, wherein: said first LED element (4) has an emission peak wavelength of -450 to 480 nm. 7、 根据权利要求 5所述的一种白光 LED， 其特征在于： 所述第二 LED 元件 （5) ·发光峰值波长为 510~540nm二极管晶片。 ' 7. A white light LED according to claim 5, wherein: said second LED element (5) has a peak wavelength of 510-540 nm diode chip. ' 8、 ' 根据权利要求 5所述的一种白光 LED,其特征在于：所述荧光粉（6) 的受激光发峰值波长为 610~620。 ' ■ 8. A white light LED according to claim 5, characterized in that the phosphor (6) is subjected to a laser emitting peak wavelength of 610 to 620. ' ■ 9、 根据权利要求 5所述的任何一种白光 LED, 其特征在于： 所述第一 LED元件 （4)和第二 LED元件 （5) 并联电连接。 9. A white LED according to any of claims 5, wherein: said first The LED element (4) and the second LED element (5) are electrically connected in parallel. 10、 根据权利要求 5所述的一种白光 LED, 其特征在于： 所述电极支架 (2)上设置一杯体（21)， 所述 LED元件（4) 设置在所述杯体 （21) 内。  10. A white LED according to claim 5, wherein: the electrode holder (2) is provided with a cup body (21), and the LED element (4) is disposed in the cup body (21) . 11、 根据权利要求 10所述的一种白光 LED,其特征在于：所述杯体（21) 与电极支架 （2) 为一体结构。  A white light LED according to claim 10, characterized in that the cup body (21) and the electrode holder (2) are of a unitary structure. 12、 根据权利要求 11所述的一种白光 LED,其特征在于：所述杯体（21) 内壁构成聚光杯。 - 12. A white light LED according to claim 11, wherein the inner wall of the cup (21) constitutes a collecting cup. - 13 ： 根据 :权利要求 10至 12所述的任何一种白光 LED, 其特征在于： 所 述荧光粉（5)集中在所述杯体（21)内覆盖所述第一 LED元件（4)和第二 LED 元件 （5)。 13:: any one of the white LED 10 to 12 claim, wherein: said phosphor (5) are concentrated in said cup (21) covers the first LED element (4) and Second LED element (5). 14、 '根据权利要求 5至 12所述的任何一种白光 LED,其特征在于： 所述 荧光粉 （5)混合在封装胶体（1) 内。  14. A white light LED according to any of claims 5 to 12, characterized in that said phosphor (5) is mixed in the encapsulant (1). 15、 稂据权利要求 5至 12所述的任何一种白光 LED,其特征在于： 所述 封装胶体 （1) 的顶端 （11)具有外凸圆弧或锥形内凹或平的结构。  A white LED according to any one of claims 5 to 12, characterized in that the top end (11) of the encapsulant (1) has a convex arc or a conical concave or flat structure. 16、 根据权利要求 13所述的一种白光 LED,其特征在于： 所述封装胶体 16. A white LED according to claim 13 wherein: said encapsulant (1) 的顶端 （11)具有外凸圆弧或锥形内凹或平的结构。 The top end of (1) (11) has a convex arc or a tapered concave or flat structure. 17、 根据权利要求 14所述的一种白光 LED,其特征在于： 所述封装胶体 (1) 的顶端 ' (11) 具有外凸圆弧或锥形内凹或平的结构 d  17. A white light LED according to claim 14, wherein: the top end '(11) of the encapsulant (1) has a convex arc or a tapered concave or flat structure d
PCT/CN2007/001750 2007-02-27 2007-06-01 A method of producing white light and a white light led obtained by using such producing method Ceased WO2008104106A1 (en)

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CN200710027032.0 2007-02-27
CNA2007100270320A CN101022102A (en) 2007-02-27 2007-02-27 LED lamp capable of emitting white light
CNA2007100273189A CN101060151A (en) 2007-03-26 2007-03-26 Method for LED synthesizing white light
CN200710027318.9 2007-03-26

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