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WO2008153013A1 - マイクロ波プラズマ処理装置およびマイクロ波プラズマ処理方法、ならびにマイクロ波透過板 - Google Patents

マイクロ波プラズマ処理装置およびマイクロ波プラズマ処理方法、ならびにマイクロ波透過板 Download PDF

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Publication number
WO2008153013A1
WO2008153013A1 PCT/JP2008/060587 JP2008060587W WO2008153013A1 WO 2008153013 A1 WO2008153013 A1 WO 2008153013A1 JP 2008060587 W JP2008060587 W JP 2008060587W WO 2008153013 A1 WO2008153013 A1 WO 2008153013A1
Authority
WO
WIPO (PCT)
Prior art keywords
micro wave
plasma processing
transmitting plate
wave plasma
processing device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/060587
Other languages
English (en)
French (fr)
Inventor
Yoshihiro Sato
Takashi Kobayashi
Toshihiko Shiozawa
Daisuke Tamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to CN2008800201126A priority Critical patent/CN101681833B/zh
Priority to US12/664,191 priority patent/US20100240225A1/en
Publication of WO2008153013A1 publication Critical patent/WO2008153013A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32238—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
    • H01L21/02326—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen into a nitride layer, e.g. changing SiN to SiON
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/3115—Doping the insulating layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Formation Of Insulating Films (AREA)
  • Arc Welding In General (AREA)

Abstract

　平面アンテナ３１のマイクロ波放射孔３２から放射されマイクロ波透過板２８を透過したマイクロ波によってチャンバー１内に処理ガスのプラズマを形成し、そのプラズマにより載置台２に載置された被処理体Ｗにプラズマ処理を施すマイクロ波プラズマ処理装置１００において、マイクロ波透過板２８は、そのマイクロ波透過面の被処理体の周縁部に対応する部分に凹凸状部４２を有し、被処理体Ｗの中央部に対応する部分は平坦部４３となっている。
PCT/JP2008/060587 2007-06-14 2008-06-10 マイクロ波プラズマ処理装置およびマイクロ波プラズマ処理方法、ならびにマイクロ波透過板 Ceased WO2008153013A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2008800201126A CN101681833B (zh) 2007-06-14 2008-06-10 微波等离子体处理装置和微波等离子体处理方法以及微波透过板
US12/664,191 US20100240225A1 (en) 2007-06-14 2008-06-10 Microwave plasma processing apparatus, microwave plasma processing method, and microwave-transmissive plate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-157985 2007-06-14
JP2007157985A JP5096047B2 (ja) 2007-06-14 2007-06-14 マイクロ波プラズマ処理装置およびマイクロ波透過板

Publications (1)

Publication Number Publication Date
WO2008153013A1 true WO2008153013A1 (ja) 2008-12-18

Family

ID=40129618

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060587 Ceased WO2008153013A1 (ja) 2007-06-14 2008-06-10 マイクロ波プラズマ処理装置およびマイクロ波プラズマ処理方法、ならびにマイクロ波透過板

Country Status (5)

Country Link
US (1) US20100240225A1 (ja)
JP (1) JP5096047B2 (ja)
KR (1) KR20100019469A (ja)
CN (1) CN101681833B (ja)
WO (1) WO2008153013A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013239415A (ja) * 2012-05-17 2013-11-28 Shimadzu Corp プラズマ発生ユニット及び表面波励起プラズマ処理装置

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9048070B2 (en) * 2011-11-11 2015-06-02 Tokyo Electron Limited Dielectric window for plasma treatment device, and plasma treatment device
WO2014179093A1 (en) * 2013-04-30 2014-11-06 Applied Materials, Inc. Flow controlled liner having spatially distributed gas passages
JP6383674B2 (ja) * 2014-02-19 2018-08-29 東京エレクトロン株式会社 基板処理装置
US10269541B2 (en) 2014-06-02 2019-04-23 Applied Materials, Inc. Workpiece processing chamber having a thermal controlled microwave window
US10039157B2 (en) * 2014-06-02 2018-07-31 Applied Materials, Inc. Workpiece processing chamber having a rotary microwave plasma source
US9947516B2 (en) 2014-06-03 2018-04-17 Tokyo Electron Limited Top dielectric quartz plate and slot antenna concept
JPWO2016098582A1 (ja) * 2014-12-15 2017-11-02 東京エレクトロン株式会社 プラズマ処理装置
US11244808B2 (en) 2017-05-26 2022-02-08 Applied Materials, Inc. Monopole antenna array source for semiconductor process equipment
US20250029849A1 (en) * 2023-07-18 2025-01-23 Applied Materials, Inc. Shaped faceplate for extreme edge film uniformity

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005150637A (ja) * 2003-11-19 2005-06-09 Canon Inc 処理方法及び装置
JP2006040638A (ja) * 2004-07-23 2006-02-09 Tokyo Electron Ltd プラズマ処理装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4974318B2 (ja) * 2001-08-17 2012-07-11 株式会社アルバック マイクロ波プラズマ処理装置および処理方法
TWI235433B (en) * 2002-07-17 2005-07-01 Tokyo Electron Ltd Oxide film forming method, oxide film forming apparatus and electronic device material
JP4563729B2 (ja) * 2003-09-04 2010-10-13 東京エレクトロン株式会社 プラズマ処理装置
JP4149427B2 (ja) * 2004-10-07 2008-09-10 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
JP4606508B2 (ja) * 2007-08-28 2011-01-05 東京エレクトロン株式会社 天板及びプラズマ処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005150637A (ja) * 2003-11-19 2005-06-09 Canon Inc 処理方法及び装置
JP2006040638A (ja) * 2004-07-23 2006-02-09 Tokyo Electron Ltd プラズマ処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013239415A (ja) * 2012-05-17 2013-11-28 Shimadzu Corp プラズマ発生ユニット及び表面波励起プラズマ処理装置

Also Published As

Publication number Publication date
US20100240225A1 (en) 2010-09-23
CN101681833B (zh) 2011-06-22
JP2008311438A (ja) 2008-12-25
KR20100019469A (ko) 2010-02-18
JP5096047B2 (ja) 2012-12-12
CN101681833A (zh) 2010-03-24

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