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WO2008152926A1 - Euv light source, euv exposure apparatus and semiconductor device manufacturing method - Google Patents

Euv light source, euv exposure apparatus and semiconductor device manufacturing method Download PDF

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Publication number
WO2008152926A1
WO2008152926A1 PCT/JP2008/060015 JP2008060015W WO2008152926A1 WO 2008152926 A1 WO2008152926 A1 WO 2008152926A1 JP 2008060015 W JP2008060015 W JP 2008060015W WO 2008152926 A1 WO2008152926 A1 WO 2008152926A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
light source
euv
section
euv light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/060015
Other languages
French (fr)
Japanese (ja)
Inventor
Katsuhiko Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of WO2008152926A1 publication Critical patent/WO2008152926A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/009—Auxiliary arrangements not involved in the plasma generation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)

Abstract

An EUV light source (11) is provided with an electrode section (14), an electrode driving section (16) and electrode cooling sections (20, 21). The electrode section brings a target material (27) into the plasma state by electrical discharge between a pair of electrodes (22, 23), and makes EUV light (14a) radiate from the generated plasma. The electrode driving section (16) rotates the electrode section. The electrode cooling sections cool the electrode section in noncontact manner.
PCT/JP2008/060015 2007-06-15 2008-05-30 Euv light source, euv exposure apparatus and semiconductor device manufacturing method Ceased WO2008152926A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-158406 2007-06-15
JP2007158406A JP2008311465A (en) 2007-06-15 2007-06-15 EUV light source, EUV exposure apparatus, and semiconductor device manufacturing method

Publications (1)

Publication Number Publication Date
WO2008152926A1 true WO2008152926A1 (en) 2008-12-18

Family

ID=40129536

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060015 Ceased WO2008152926A1 (en) 2007-06-15 2008-05-30 Euv light source, euv exposure apparatus and semiconductor device manufacturing method

Country Status (2)

Country Link
JP (1) JP2008311465A (en)
WO (1) WO2008152926A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112015007070T5 (en) 2015-10-29 2018-09-13 Intel Corporation Metal-free frame design for silicon bridges for semiconductor packages
JP7405000B2 (en) * 2020-05-15 2023-12-26 ウシオ電機株式会社 Extreme ultraviolet light source device and extreme ultraviolet light generation method
JP7740093B2 (en) * 2022-03-30 2025-09-17 ウシオ電機株式会社 light source device

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5774999A (en) * 1980-10-29 1982-05-11 Hitachi Ltd X-ray tube device
JPH07282992A (en) * 1994-04-15 1995-10-27 Toshiba Corp Plasma type X-ray generator
JPH0864386A (en) * 1994-08-29 1996-03-08 Shimadzu Corp Rotating anode X-ray tube device
JP2003051398A (en) * 2001-08-07 2003-02-21 Nikon Corp X-ray generator, exposure apparatus, exposure method, and device manufacturing method
JP2004039851A (en) * 2002-07-03 2004-02-05 Nikon Corp Mirror cooling device and exposure device
JP2004165155A (en) * 2002-09-19 2004-06-10 Asml Netherlands Bv Radiation source, lithographic apparatus, and device manufacturing method
JP2006191091A (en) * 2004-12-29 2006-07-20 Asml Netherlands Bv Lithography device, illumination system, filter system and method for cooling support of such filter system
JP2007012603A (en) * 2005-06-27 2007-01-18 Xtreme Technologies Gmbh Apparatus and method for generating extreme ultraviolet radiation
JP2007505460A (en) * 2003-09-11 2007-03-08 コニンクリユケ フィリップス エレクトロニクス エヌ．ブイ． Method and apparatus for generating extreme ultraviolet radiation or soft x-ray radiation

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5774999A (en) * 1980-10-29 1982-05-11 Hitachi Ltd X-ray tube device
JPH07282992A (en) * 1994-04-15 1995-10-27 Toshiba Corp Plasma type X-ray generator
JPH0864386A (en) * 1994-08-29 1996-03-08 Shimadzu Corp Rotating anode X-ray tube device
JP2003051398A (en) * 2001-08-07 2003-02-21 Nikon Corp X-ray generator, exposure apparatus, exposure method, and device manufacturing method
JP2004039851A (en) * 2002-07-03 2004-02-05 Nikon Corp Mirror cooling device and exposure device
JP2004165155A (en) * 2002-09-19 2004-06-10 Asml Netherlands Bv Radiation source, lithographic apparatus, and device manufacturing method
JP2007505460A (en) * 2003-09-11 2007-03-08 コニンクリユケ フィリップス エレクトロニクス エヌ．ブイ． Method and apparatus for generating extreme ultraviolet radiation or soft x-ray radiation
JP2006191091A (en) * 2004-12-29 2006-07-20 Asml Netherlands Bv Lithography device, illumination system, filter system and method for cooling support of such filter system
JP2007012603A (en) * 2005-06-27 2007-01-18 Xtreme Technologies Gmbh Apparatus and method for generating extreme ultraviolet radiation

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
STAMM U. ET AL.: "EUV Source Development for High Volume Chip Manufacturing Tools", PROC. OF SPIE, vol. 6517, 15 March 2007 (2007-03-15), pages 65170P.1 - 65170P.2 *

Also Published As

Publication number Publication date
JP2008311465A (en) 2008-12-25

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