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WO2008149891A1 - 成膜装置 - Google Patents

成膜装置 Download PDF

Info

Publication number
WO2008149891A1
WO2008149891A1 PCT/JP2008/060274 JP2008060274W WO2008149891A1 WO 2008149891 A1 WO2008149891 A1 WO 2008149891A1 JP 2008060274 W JP2008060274 W JP 2008060274W WO 2008149891 A1 WO2008149891 A1 WO 2008149891A1
Authority
WO
WIPO (PCT)
Prior art keywords
film forming
forming apparatus
magnetron sputtering
sputtering
substrate transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/060274
Other languages
English (en)
French (fr)
Inventor
Masao Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Canon Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Priority to JP2008547798A priority Critical patent/JP4336739B2/ja
Priority to CN2008800005807A priority patent/CN101542013B/zh
Publication of WO2008149891A1 publication Critical patent/WO2008149891A1/ja
Priority to US12/336,810 priority patent/US7744731B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Electric Cables (AREA)

Abstract

シート抵抗値が均一化された薄膜を成膜することができるスパッタ成膜装置を提供する。スパッタ成膜装置は、成膜チャンバ内に少なくとも２つのマグネトロンスパッタ機構が並べて配置されている。少なくとも２つのマグネトロンスパッタ機構のうち、基板搬送方向４３の最上流側に配置されたマグネトロンスパッタ機構に備えられたターゲットシールド５５の基板搬送方向上流側には、電気的に絶縁された第１のカソードシールド６２が配置されている。
PCT/JP2008/060274 2007-06-04 2008-06-04 成膜装置 Ceased WO2008149891A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008547798A JP4336739B2 (ja) 2007-06-04 2008-06-04 成膜装置
CN2008800005807A CN101542013B (zh) 2007-06-04 2008-06-04 形成薄膜的溅射设备
US12/336,810 US7744731B2 (en) 2007-06-04 2008-12-17 Sputtering apparatus of forming thin film

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-148362 2007-06-04
JP2007148362 2007-06-04

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/336,810 Continuation US7744731B2 (en) 2007-06-04 2008-12-17 Sputtering apparatus of forming thin film

Publications (1)

Publication Number Publication Date
WO2008149891A1 true WO2008149891A1 (ja) 2008-12-11

Family

ID=40093703

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060274 Ceased WO2008149891A1 (ja) 2007-06-04 2008-06-04 成膜装置

Country Status (4)

Country Link
US (1) US7744731B2 (ja)
JP (1) JP4336739B2 (ja)
CN (1) CN101542013B (ja)
WO (1) WO2008149891A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2209132A1 (en) * 2009-01-16 2010-07-21 Applied Materials, Inc. Charged particle beam PVD device, shielding device, coating chamber for coating substrates, and method of coating
JP2013001943A (ja) * 2011-06-15 2013-01-07 Ulvac Japan Ltd スパッタリング装置
JP2019026870A (ja) * 2017-07-26 2019-02-21 株式会社アルバック スパッタ装置
WO2020004619A1 (ja) * 2018-06-28 2020-01-02 株式会社アルバック スパッタ成膜装置
CN111235540A (zh) * 2020-03-18 2020-06-05 杭州朗旭新材料科技有限公司 一种磁控溅射设备及磁控溅射方法

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2213761A1 (en) * 2007-11-30 2010-08-04 Canon Anelva Corporation Substrate processing apparatus and substrate processing method
JP2009299184A (ja) * 2008-05-12 2009-12-24 Canon Anelva Corp 磁場発生装置、磁場発生方法、スパッタ装置及びデバイスの製造方法
CN105908145B (zh) * 2011-11-04 2018-11-09 因特瓦克公司 线性扫描溅射系统和方法
US10106883B2 (en) 2011-11-04 2018-10-23 Intevac, Inc. Sputtering system and method using direction-dependent scan speed or power
DE102012100288B4 (de) 2012-01-13 2016-03-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung eines Kunststoffsubstrats mit einer porösen Schicht
CN103132044B (zh) * 2013-03-25 2015-11-18 深圳市创益科技发展有限公司 一种改善平面靶镀膜均匀性的屏蔽罩
CN104651796B (zh) * 2013-11-19 2017-06-06 北京北方微电子基地设备工艺研究中心有限责任公司 Ito薄膜的电阻调节方法
KR20160142288A (ko) * 2014-02-20 2016-12-12 인테벡, 인코포레이티드 방향-의존적인 스캔 속도 또는 전력을 이용하는 스퍼터링 시스템 및 방법
CN105803410B (zh) * 2016-04-29 2018-07-17 京东方科技集团股份有限公司 磁控溅射装置、磁控溅射设备及磁控溅射的方法
CN105761878B (zh) * 2016-04-29 2018-03-20 东南大学 一种Cu掺杂Fe‑N软磁薄膜及其制备方法
CN107488832B (zh) * 2016-06-12 2019-11-29 北京北方华创微电子装备有限公司 沉积设备以及物理气相沉积腔室
KR20190077575A (ko) * 2016-11-22 2019-07-03 어플라이드 머티어리얼스, 인코포레이티드 기판 상으로의 층 증착을 위한 장치 및 방법
JP7326106B2 (ja) * 2019-10-16 2023-08-15 株式会社アルバック スパッタリング装置
CN111621761A (zh) * 2020-07-06 2020-09-04 苏州宏策光电科技有限公司 一种磁控溅射镀膜装置及方法
CN113774345B (zh) * 2021-09-01 2023-05-30 星浪光学科技(江苏)有限公司 一种基于磁控溅射的复合板手机后盖印刷镀膜方法
USD1058525S1 (en) * 2023-04-06 2025-01-21 GE Precision Healthcare LLC Cathode shield

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63103060A (ja) * 1986-10-20 1988-05-07 Nippon Sheet Glass Co Ltd 透明電極付き基板の製造方法
JPH08167479A (ja) * 1994-12-14 1996-06-25 Toppan Printing Co Ltd 透明導電膜及びその製造方法
JPH09272973A (ja) * 1996-04-04 1997-10-21 Anelva Corp 低圧力放電スパッタ装置
JPH1046334A (ja) * 1996-04-24 1998-02-17 Anelva Corp スパッタ成膜装置
JP2002146528A (ja) * 2000-11-01 2002-05-22 Anelva Corp スパッタ成膜方法
JP2002220663A (ja) * 2001-01-29 2002-08-09 Anelva Corp マグネトロンスパッタリング装置
JP2005510045A (ja) * 2001-11-14 2005-04-14 アプライド　マテリアルズ　インコーポレイテッド スパッタリング及び再スパッタリングのための自己イオン化したプラズマ及び誘導結合したプラズマ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4362611A (en) * 1981-07-27 1982-12-07 International Business Machines Corporation Quadrupole R.F. sputtering system having an anode/cathode shield and a floating target shield
KR100262768B1 (ko) 1996-04-24 2000-08-01 니시히라 순지 스퍼터성막장치
JP4202459B2 (ja) 1998-03-02 2008-12-24 キヤノンアネルバ株式会社 スパッタ成膜装置およびスパッタ成膜方法
JP4453850B2 (ja) 1999-06-01 2010-04-21 キヤノンアネルバ株式会社 スパッタ成膜装置およびスパッタ膜形成方法
US6610184B2 (en) 2001-11-14 2003-08-26 Applied Materials, Inc. Magnet array in conjunction with rotating magnetron for plasma sputtering

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63103060A (ja) * 1986-10-20 1988-05-07 Nippon Sheet Glass Co Ltd 透明電極付き基板の製造方法
JPH08167479A (ja) * 1994-12-14 1996-06-25 Toppan Printing Co Ltd 透明導電膜及びその製造方法
JPH09272973A (ja) * 1996-04-04 1997-10-21 Anelva Corp 低圧力放電スパッタ装置
JPH1046334A (ja) * 1996-04-24 1998-02-17 Anelva Corp スパッタ成膜装置
JP2002146528A (ja) * 2000-11-01 2002-05-22 Anelva Corp スパッタ成膜方法
JP2002220663A (ja) * 2001-01-29 2002-08-09 Anelva Corp マグネトロンスパッタリング装置
JP2005510045A (ja) * 2001-11-14 2005-04-14 アプライド　マテリアルズ　インコーポレイテッド スパッタリング及び再スパッタリングのための自己イオン化したプラズマ及び誘導結合したプラズマ

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2209132A1 (en) * 2009-01-16 2010-07-21 Applied Materials, Inc. Charged particle beam PVD device, shielding device, coating chamber for coating substrates, and method of coating
JP2013001943A (ja) * 2011-06-15 2013-01-07 Ulvac Japan Ltd スパッタリング装置
JP2019026870A (ja) * 2017-07-26 2019-02-21 株式会社アルバック スパッタ装置
WO2020004619A1 (ja) * 2018-06-28 2020-01-02 株式会社アルバック スパッタ成膜装置
CN111417741A (zh) * 2018-06-28 2020-07-14 株式会社爱发科 溅射成膜装置
JPWO2020004619A1 (ja) * 2018-06-28 2020-12-17 株式会社アルバック スパッタ成膜装置
CN111417741B (zh) * 2018-06-28 2022-05-10 株式会社爱发科 溅射成膜装置
CN111235540A (zh) * 2020-03-18 2020-06-05 杭州朗旭新材料科技有限公司 一种磁控溅射设备及磁控溅射方法
CN111235540B (zh) * 2020-03-18 2024-03-29 杭州朗旭新材料科技有限公司 一种磁控溅射设备及磁控溅射方法

Also Published As

Publication number Publication date
US7744731B2 (en) 2010-06-29
JP4336739B2 (ja) 2009-09-30
JPWO2008149891A1 (ja) 2010-08-26
CN101542013A (zh) 2009-09-23
CN101542013B (zh) 2011-05-04
US20090127098A1 (en) 2009-05-21

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