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WO2008147135A1 - Détecteur à rayons x et son procédé de détection d'image - Google Patents

Détecteur à rayons x et son procédé de détection d'image Download PDF

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Publication number
WO2008147135A1
WO2008147135A1 PCT/KR2008/003043 KR2008003043W WO2008147135A1 WO 2008147135 A1 WO2008147135 A1 WO 2008147135A1 KR 2008003043 W KR2008003043 W KR 2008003043W WO 2008147135 A1 WO2008147135 A1 WO 2008147135A1
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WIPO (PCT)
Prior art keywords
ray detector
ray
electrode
electrodes
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2008/003043
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English (en)
Inventor
Jong-Bae Shin
Kwang-Soup Song
Kyung-Jin Kim
Mhan-Joong Kim
Weon-Hee Jeong
Sang-Gon Kim
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LG Innotek Co Ltd
Original Assignee
LG Micron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020070053218A external-priority patent/KR20080105518A/ko
Priority claimed from KR1020070110517A external-priority patent/KR20090044424A/ko
Priority claimed from KR1020070138121A external-priority patent/KR20090070201A/ko
Application filed by LG Micron Ltd filed Critical LG Micron Ltd
Publication of WO2008147135A1 publication Critical patent/WO2008147135A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J47/00—Tubes for determining the presence, intensity, density or energy of radiation or particles
    • H01J47/02—Ionisation chambers

Definitions

  • the present invention relates to an X-ray detector for image detection and an image- detecting method by the same, and, more particularly, to an X-ray detector for image detection constructed in a structure in which a hermetically sealed vacuous space defined between two substrates exhibiting high X-ray transnissivity is filled with a penning gas or a nixed penning gas, and the number of electrons generated by a radioactive ray transmitted through a human body is read using an electronic circuit to acquire an X-ray image, and an image-detecting method by the same.
  • the present invention relates to an X-ray detector using a gas type detecting method with or without the provision of a thin film transistor or partitions of a plasma display panel (PDP), whereby the convenience in manufacturing the X-ray detector is improved, the manufacturing costs of the X-ray detector are reduced, and, at the same time, the sensitivity of the X-ray detector is greatly improved.
  • PDP plasma display panel
  • the present invention relates to an X-ray detecting method that is capable of accomplishing easy manufacture of nicro pixels through the use of a plurality of electrode lines and epochally improving the convenience in information detection therethrough, thereby efficiently collecting image information with respect to even a large-sized substrate.
  • An X-ray inspection method which is being widely used for medicine and engineering, includes taking a photograph using an X-ray sensitive film and printing the photograph to know the inspection result.
  • this X-ray inspection method the photograph of a desired object is obtained after the lapse of a specific period of time, with the result that it takes a lot of time to know the inspection result.
  • an X-ray detector for image detection using a thin film transistor has been researched and developed.
  • the detector using the TFT has an advantage in that the TFT is used as a switching element, and therefore, it is possible to diagnose the result in real time immediately after X-ray photographing.
  • Presently commercialized X-ray signal detecting methods are classified into an indirect method and a direct method.
  • FIG. 1 is a sectional view schematically illustrating an X-ray detector for image detection adopting a conventional indirect method.
  • the conventional indirect method is a method in which a photodiode 20 is formed on a TFT 10, a scintillator 30 for converting an X-ray signal into a visible ray is applied to the top of the photodiode 20, the X-ray signal, converted into the visible ray by the scintillator 30, is converted into an electric signal through the photodiode 20, the converted electric signal is stored in a capacitor of the TFT 10, and the X-ray signal charged in the capacitor is read by applying a readout signal to a gate electrode of the TFT 10.
  • FIG. 2 is a sectional view schematically illustrating an X-ray detector for image detection adopting a conventional direct method.
  • the conventional direct method uses a TFT similarly to the conventional indirect method.
  • the conventional direct method is a method in which a photoconductor 40, such as a-Se, CsI, or PbQ sensitive to an X-ray, is formed on a TFT 10 for converting an X-ray signal to an electric signal, electrons generated by the X-ray are stored in a capacitor of the TFT 10, and the X-ray signal charged in the capacitor is read by applying a readout signal to a gate of the TFT 10.
  • a photoconductor 40 such as a-Se, CsI, or PbQ sensitive to an X-ray
  • the PDP is an image device constructed in a structure in which a penning gas, such as Xe or Ne, is encapsulated between two substrates to which a plurality of electrodes are coated, a discharge voltage is applied to the penning gas, and a fluorescent substance formed in a predetermined pattern is excited by ultraviolet rays generated due to the discharge voltage, to obtain a desired number, character, or graph.
  • a penning gas such as Xe or Ne
  • FIG. 3 is a sectional view schematically illustrating an X-ray detector for image detection using a conventional plasma display panel (PDP).
  • PDP plasma display panel
  • the detector 100 using the PDP includes two substrates 110 disposed opposite to each other such that a discharge gap is defined between the substrates, dielectric layers 120 formed on opposite sides of the substrates, electrode layers 130 formed between the substrates and the dielectric layers, partitions 140 formed between the dielectric layers for forming a hermetically sealed structure between the substrates, a fluorescent layer 150 formed on the partitions and one side of one of the substrates for generating a visible ray when being excited by a radioactive ray, and a gas layer 160 filled in a hermetically sealed cell formed by the partitions and the substrates for generating electrons when being excited by a radioactive ray.
  • the X-ray detector for image detection includes a detector body defining a hermetically sealed space which is filled with a gas layer containing a gas for converting an X-ray signal into an electric signal and a plurality of electrodes formed at the detector body. Consequently, the present invention does not use the conventional thin film transistor, and therefore, it is possible to manufacture the X-ray detector through a simply manufacturing process at low costs. Furthermore, the present invention eliminates the partitions of the plasma display panel. Consequently, it is possible to secure a wider gas filling space, thereby improving the sensitivity of the X-ray detector. In addition, a process for manufacturing the partitions is eliminated, whereby the efficiency of the manufacturing process is improved.
  • the X-ray detector according to the present invention further includes a circuit unit disposed at the rear of the X-ray detector for reading out a signal amount of electrons and holes formed by voltage applied to the electrodes. Snce the circuit unit is disposed at the rear of the X-ray detector, it is possible to minimize the damage to the X-ray detector which may be caused by the X-ray, thereby efficiently obtaining an image having high sensitivity.
  • the X-ray detector further includes a dielectric layer disposed in the detector body.
  • the detector body includes an upper substrate and a lower substrate, and the upper substrate and the lower substrate are constructed in a structure in which the upper substrate and the lower substrate are spaced apart from each other by supporters disposed between the upper substrate and the lower substrate.
  • the height of the supporters may be adjusted to secure a space for the gas layer, which generates electrons, to the highest degree, thereby improving the sensitivity of the X-ray detector and, at the same time, improving X-ray transnissivity.
  • the electrodes include a first electrode and a second electrode formed inside or outside the upper substrate and the lower substrate.
  • the electrodes include a first electrode and a second electrode formed at the top and the bottom of the lower substrate, respectively.
  • the basic components of the X-ray detector are disposed at the lower substrate, whereby it is possible to minimize the thickness of the upper substrate, and therefore, to maximize X-ray transnissivity.
  • the first electrode formed at the upper substrate and the second electrode formed at the lower substrate are arranged in a structure in which the first electrode and the second electrode intersect each other.
  • this arrangement is advantageous in manufacturing the X- ray detector in a structure corresponding to a human anatomy model or a curve model, in addition to a conventional square structure, through the provision of various intersection structures of the electrodes.
  • the dielectric, formed in the detector body is disposed between the first electrode and the second electrode. Consequently, it is possible to protect the second electrode and prevent the occurrence of a short circuit between the electrodes, thereby maximally improving the property of the structure having no partitions. Meanwhile, the dielectric may be formed on the lower substrate, whereby it is possible to minimize the thickness of the upper substrate.
  • the dielectric is made of one or more selected from a group consisting of
  • the electrodes and the dielectric have a thickness of 1 to 100 um.
  • the width and the length of the electrodes and the dielectric preferably vary depending upon the size of the X-ray detector. Consequently, it is possible to construct the X-ray detector in a structure to maximize X-ray transnissivity.
  • the gas is a penning gas.
  • the gas is any one selected from penning gases or a mixture of two or more penning gases. Consequently, it is possible to reduce the manufacturing costs and improve efficiency.
  • the X-ray detector according to the present invention further includes a gas inlet and outlet unit for allowing the gas to be introduced and discharged therethrough.
  • the circuit unit is driven by a passive matrix type readout method of collecting electron and hole pairs formed by an X-ray, applying voltage to the electrodes, and reading out a signal amount of the collected electrons at the intersections between the electrodes. Consequently, it is possible to acquire an X-ray image with high stability, increased life span, and a low price.
  • an X- ray detecting method using the X-ray detector for image detection with the above- stated construction according to the first embodiment provides an X-ray detecting method for reading pixel information at intersections between electrode lines formed at the X-ray detector, the X-ray detecting method including reading pixel information of electrode lines formed by a second electrode arranged such that the second electrode intersects a first electrode, wherein any one of the first electrode lines or the second electrode lines is fixed, and information of the intersections at the other electrode lines is sequentially read, to collect image signal information. Consequently, it is possible to easily manufacture nicro pixels on the upper and lower substrates using the electrode lines. For a large-area detector, information acquisition is easy.
  • the X-ray detector according to the present invention is driven by a circuit unit including a drive integrated circuit and an analog to digital converter (ADC). Consequently, it is possible to reduce time necessary for information acquisition through the use of the drive integrated circuit.
  • ADC analog to digital converter
  • an X- ray detecting method for collecting a signal amount formed by electrons and holes generated by an X-ray transmitted through a subject as image information, the X-ray detecting method including reading out a signal amount of pixels formed by intersections between a plurality of first electrode lines (X lines) and a plurality of second electrode lines (Y lines) formed by a plurality of pattern electrodes disposed in the X-ray detector for applying voltage, wherein the Y lines are fixed, and pixel information of the intersections at the X lines intersecting the Y lines is sequentially read, to collect image information.
  • X lines first electrode lines
  • Y lines second electrode lines
  • the step of sequentially reading pixel information of the intersections at the X lines intersecting the Y lines while fixing the Y lines includes 1) fixing the first Y line (Yl) and sequentially reading pixel information of the X lines intersecting the first Y line (Yl) from Xl to Xn, and 2) after the completion of step 1), sequentially fixing the Y lines from Y2 line to Yn line, and sequentially reading pixel information of the X lines intersecting the fixed Y lines from Xl to Xn. Consequently, it is possible to simplify the manufacturing process and improve the efficiency in information collection of a large-area detector through the method of reading intersection information of the pattern electrodes without using a thin film transistor.
  • the lines fixed are X lines
  • the lines from which the pixel information is sequentially read are Y lines.
  • the X-ray detector is driven by a circuit unit including a drive integrated circuit and an ADC.
  • the X-ray detector is divided into several regions, and the respective steps of the X-ray detecting method are carried out for each divided region to detect a signal amount of a plurality of electrode pattern lines formed in each divided region, thereby collecting image information. Consequently, it is possible to reduce time necessary for information collection and easily achieve circuit design for a large-area detector. Also, it is possible to reduce time necessary for image acquisition, and, at the same time, provide a low-priced detector since a high-priced thin film transistor is not used.
  • the X-ray detector that forms electrons and holes generated by an X-ray transmitted through the subject according to the present invention is a thin film transistor detector. Consequently, the method of reading intersection information of the pattern electrodes is applicable to the conventional detector using the thin film transistor, thereby improving the efficiency in information collection and achieving wide-range application.
  • the X-ray detector that forms electrons and holes generated by an X-ray transmitted through the subject according to the present invention is a plasma display panel detector. Consequently, it is possible to apply the method of performing detection through image information collection based on the method of reading the intersection information of the pattern electrodes to a detector constructed in a structure having partitions.
  • an X- ray detector for image detection with the following construction as a second embodiment.
  • the present invention provides an X-ray detector for image detection, including a detector body defining a hermetically sealed space which is filled with a gas layer containing a gas for converting an X-ray signal into an electric signal and a plurality of electrodes formed at the detector body, wherein the detector body includes an upper substrate having a first electrode and a lower substrate having second electrodes, and the lower substrate further has isolation films formed between the respective second electrodes for constituting pixels.
  • the first electrode and the second electrodes are arranged in a structure in which the first electrode and the second electrodes intersect each other, and the pixels are formed at the respective intersections between the first electrode and the second electrodes.
  • the X-ray detector according to the present invention further includes a circuit unit for reading out a signal amount of electrons and holes formed by voltage applied to the first and second electrodes.
  • the isolation films have a height higher than that of the second electrodes but not coming into contact with the upper substrate.
  • the isolation films may be constructed in a structure in which the isolation films have a height higher than that of the second electrodes, but at least some of the isolation films do not come into contact with the upper substrate for gas flow.
  • the isolation films are made of any one selected from a group consisting of ceramic, plastic, and polymer.
  • the X-ray detector according to the present invention further includes a dielectric layer formed on the first electrode for preventing the occurrence of a short circuit between the electrodes.
  • the dielectric layer has a thickness of 1 to 100 um.
  • the X-ray detector according to the present invention further includes supporters disposed between the upper substrate and the lower substrate, such that the upper substrate and the lower substrate are connected to each other via the supporters, for supporting the upper substrate and the lower substrate, such that the upper substrate and the lower substrate are spaced a predetermined distance from each other, and securing a space for the gas layer.
  • the supporters are located at the position where the upper substrate and the lower substrate confront each other not to disturb the transmission of an X-ray.
  • the supporters are formed in any one selected from a group consisting of a circular shape, an elliptical shape, and a polygonal shape.
  • the supporters are made of zirconium exhibiting high physical/chenical stability.
  • the gas layer contains a penning gas or a nixed penning gas.
  • the penning gas is any one selected from a group consisting of Xe, Kr,
  • the nixed penning gas is any one selected from a group consisting of
  • the present invention provides an image-detecting method including (a) making an X-ray to collide with molecules of a penning gas or a nixed penning gas contained in a gas layer, (b) ionizing the penning gas or the nixed penning gas, (c) applying voltage to the electrodes such that holes of the ionized penning gas or the ionized nixed penning gas accumulate at the first electrode and electrons of the ionized penning gas or the ionized nixed penning gas accumulate at the second electrodes, and (d) reading a signal amount of the electrons accumulated at the second electrodes to detect an image.
  • step (c) is a step at which the electrons ionized in the gas layer move straightly by the isolation films formed between the second electrodes, whereby the electrons accumulate at the second electrodes of the respective pixels without interference with neighboring pixels.
  • the penning gas is any one selected from a group consisting of Xe, Kr,
  • the nixed penning gas is any one selected from a group consisting of
  • step (d) is a step at which a signal amount of the electrons and the holes accumulated at the respective pixels at the intersections between the second electrodes and the first electrode is sequentially read to collect image information.
  • an X- ray detector for image detection according to a third embodiment.
  • the present invention provides an X-ray detector for image detection, including a detector body defining a hermetically sealed space which is filled with a gas layer containing a gas for converting an X-ray signal into an electric signal and a plurality of electrodes formed at the detector body, wherein the electrodes include three electrodes formed inside or outside the detector body, the detector body including an upper substrate and a lower substrate. Consequently, the present invention is applicable to a large-area detector, and it is possible to prevent a detecting circuit from being damaged due to the irradiation of an X-ray and the application of high voltage.
  • the detector body includes supporters for supporting the upper substrate and the lower substrate which are opposite to each other. Consequently, it is possible to secure the gas filling space through the provision of the supporters and, at the same time, prevent the occurrence of a crosstalk phenomenon in which electrons discharged by the X-ray affect the neighboring pixels.
  • the electrodes include three electrodes formed inside or outside the upper and lower substrates. Consequently, it is possible to manufacture a detector constructed in an efficient structure to guide electrons generated by the collision between the X-ray and the gas in one direction without the provision of a thin film transistor, and, at the same time, naturally transmit the guided electrons to the outside to read a signal, at low costs.
  • the electrodes include a first electrode and a second electrode formed at the upper substrate and the lower substrate, respectively, in an intersection structure, and a third electrode formed inside or outside the lower substrate. Consequently, the voltage application electrodes and the readout electrode for reading out information are constructed in a triple structure, thereby providing an X-ray detector that is capable of simply and efficiently performing a detecting operation.
  • the third electrode is a whole-surface electrode.
  • the X-ray detector according to the present invention further includes a dielectric layer or a substrate formed between the respective electrodes. Consequently, it is possible to prevent the occurrence of a short circuit between the electrodes in a structure in which the three electrodes are used.
  • the dielectric layer is formed at the bottom of the first electrode, and the second and third electrodes are formed inside and outside the lower substrate, respectively. Consequently, it is possible to construct the X-ray detector in various structures.
  • the dielectric layer is formed at the bottom of the first electrode, and the second and third electrodes are formed at the top or the bottom of the lower substrate such that the second and third electrodes arespaced apart from each other by an additional dielectric layer.
  • the X-ray detector constructed in the triple electrode structure, further includes a circuit unit for reading out a signal amount formed by voltage applied to the first and third electrodes through the second electrode. Consequently, it is possible to simplify the structure of the detector and, at the same time, maximize detecting efficiency.
  • the filling gas is a pure penning gas including any one selected from a group consisting of Xe, Kr, Ar, Ne, and He or a nixed penning gas including two or more selected from a group consisting of Xe, Kr, Ar, Ne, and He, whereby the detection efficiency of the detector is improved.
  • the gas for filling the hermetically sealed space is any one selected from a group consisting of Xe+Ne, Kr+Ne, Ar+Ne, Xe+CO , Kr+CO , Ar+CO , Xe+CH ,
  • the X-ray detector adopts a gas type detecting method, and therefore, it is not necessary to provide a thin film transistor or partitions of a PDP. Consequently, the present invention has the effect of easily and conveniently manufacturing the X-ray detector, reducing the manufacturing costs of the X-ray detector, and greatly improving the sensitivity of the X-ray detector.
  • the X-ray detector for image detection and the image-detecting method by the same according to the present invention do not use the TFT, the photodiode, the scintillator, and the photoconductor as compared with the presently commercialized X- ray detector for image detection using the TFT. Consequently, the present invention has the effect of simplifying the process for manufacturing the X-ray detector and achieving the production of a large-sized flat panel.
  • the present invention provides an X-ray detector constructed in which the partitions of the PDP are eliminated. Consequently, the present invention has the effect of easily and conveniently manufacturing the X-ray detector, reducing the manufacturing costs of the X-ray detector, and greatly improving the sensitivity of the X-ray detector.
  • the present invention has the effect of efficiently collecting image information with respect to even a large-sized substrate.
  • the X-ray detector according to the present invention is capable of reading out a detection signal through three separate electrodes without using a thin film transistor. Consequently, the present invention has the effect of reducing the manufacturing costs of the X-ray detector, improving the convenience in use of the X-ray detector, and providing a digital radioactive ray image with a high degree of efficiency.
  • FIG. 1 is a sectional view schematically illustrating an X-ray detector for image detection adopting a conventional indirect method
  • FIG. 2 is a sectional view schematically illustrating an X-ray detector for image detection adopting a conventional direct method
  • FIG. 3 is a sectional view schematically illustrating an X-ray detector for image detection using a conventional plasma display panel (PDP);
  • PDP plasma display panel
  • FIG. 4 is a sectional view illustrating principal components of an X-ray detector according to the present invention.
  • FIG. 5 is a conceptional view illustrating a detecting method according to the present invention.
  • FIG. 6 is a conceptional view illustrating another embodiment of the detecting method according to the present invention.
  • FIG. 7 is a view schematically illustrating an X-ray detector for image detection according to an embodiment of the present invention.
  • FIGS. 8 to 10 are views schematically illustrating an image-detecting method according to an embodiment of the present invention.
  • FIG. 11 is a view illustrating an X-ray detector according to an embodiment of the present invention.
  • FIG. 12 is a view illustrating an X-ray detector according to another embodiment of the present invention.
  • FIG. 13 is a screen view illustrating value detected by the X-ray detector according to the present invention. Best Mode for Carrying Out the Invention
  • an X-ray detector 200 includes a detector body 210 and 220 constructed in a hermetically sealed structure in which the interior of the detector body is filled with gas 270, a dielectric 260 formed inside the detector for protecting, preferably, a second electrode, and electrodes 230 and 240 formed inside the detector body.
  • the X-ray detector 200 according to the present invention further includes a circuit unit 290 disposed below the lower substrate for reading out a signal from the X-ray detector.
  • the detector body is constructed in an integrated structure in which the interior of the detector body is filled with gas. More preferably, as shown in FIG. 4, the detector body is constructed in a structure including an upper substrate 210 and a lower substrate 220, which are connected to each other by an outer sealing member 280 to constitute a hermetically sealed structure. In order to maximize the transnissivity of an X-ray transmitted through the upper substrate from the top of the upper substrate, it is preferred to decrease the thickness of the upper substrate to the highest degree. Also, it is more preferred that all the other components, excluding the first electrode, of the X- ray detector be stacked on the lower substrate.
  • the pattern electrodes 230 and 240 are formed on the upper and lower substrates in a symmetrical fashion.
  • the dielectric is disposed between the first electrode and the second electrode for preventing the occurrence of a short circuit between the electrodes. More preferably, the dielectric 260 is disposed at the top of the second electrode.
  • the dielectric may be made of various materials. In this embodiment, the dielectric is made of PbO.
  • the dielectric is preferably made of one or more selected from a group consisting of Pb oxide, S oxide, B oxide, Al oxide, Ba oxide, Sr oxide, Zn oxide, Bi oxide, Ti oxide, Co oxide, Ca oxide, P oxide, R oxide, and Sn oxide (PbQ SO , B O , Al O , BaQ SrQ ZnQ Bi O , TiO , CoQ Bi-based
  • the electrodes and the dielectric preferably have a thickness of 1 to 100 um.
  • the width and the length of the electrodes and the dielectric preferably vary depending upon the size of the X-ray detector.
  • the pattern electrodes may be generally formed inside or outside the upper substrate and the lower substrate.
  • one electrode may be formed on the upper substrate, and the other electrode may be formed on the lower substrate.
  • two electrodes may be formed on the lower substrate such that one electrode is disposed at the top of the lower substrate and the other electrode is disposed at the bottom of the lower substrate.
  • the pattern electrodes may be spaced vertically apart from each other in a vertical intersection structure or in other various intersection structures. This arrangement is advantageous in manufacturing the X-ray detector in a structure corresponding to a human anatomy model or a curve model, in addition to a conventional square structure, through the provision of various intersection structures of the electrodes.
  • supporters 250 are preferably mounted between the upper substrate 210 and the lower substrate 220 for increasing a fill factor such that the space which can be filled with the gas layer 270 is increased to the highest degree.
  • the space defined between the upper substrate and the lower substrate is filled with the gas layer 270, which is converted into electrons by an X-ray. That is, an X-ray, transmitted through a human body, is incident upon the upper part (the upper substrate) of the X-ray detector. The X-ray, transmitted through the upper substrate 210 passes through the first electrode and then reaches the gas layer 270. At this time, the X-ray, reaching the gas layer, ionizes the gas to generate electron and hole pairs. The generated electrons move to the respective electrodes. Generally, electrons exhibit straight movability.
  • the gas constituting the gas layer is preferably a penning gas including one or more selected from a group consisting of xenon, krypton, argon, neon, helium, carbon dioxide, and methane.
  • the sensitivity of the conventional X-ray detector may be represented by the following equation.
  • the conventional X-ray detector has a trans-
  • the gas type digital X-ray detector with improved transnissivity according to the present invention has a transnissivity of 0.5 nC/mR-cm or higher.
  • the upper substrate was made of soda glass 1.2 T having low absorptivity to increase X- ray transnissivity
  • the two pattern electrodes were formed on the upper substrate and the lower substrate
  • a gas mixture of xenon and argon nixed at a ratio of 8:2 was injected into a space 4 mm secured by the supporters at a pressure of 700 Torr, and voltage of 100 volts to 1000 volts was applied.
  • the sensitivities of this X-ray detector are as follows.
  • FIG. 5 is a conceptional view illustrating pattern lines of the two electrodes formed at the upper and lower substrates of the X-ray detector according to the present invention.
  • the basic two-electrode pattern lines are formed on the upper and lower substrates, and image signal information is sequentially read out using a drive integrated circuit.
  • the drive integrated circuit may be divided into several equal parts to read out information. This method is generally used even when the area is greatly increased.
  • first electrode lines in the X-axis direction are X lines
  • second electrode lines in the Y-axis direction are Y lines.
  • the number of the pattern electrode lines is increased in proportional to the number of electrodes formed. Consequently, the pattern electrode lines are defined as Xl, X2, X3 Xn, and the pattern electrode lines vertically intersecting the above pattern electrode lines are defined as Yl, Y2, Y3 Yn.
  • the intersections between the X lines and the corresponding Y lines constitute pixels, which are collected to form an image.
  • a method of reading circuit information is as follows. First, the Y axis is read from Yl to Yn, while Xl is fixed, and then the Y axis is read from Yl to Yn, while X2 is fixed.
  • This method is repeatedly carried out to read up to Xn to collect information of the respective pixels.
  • the method is repeatedly carried out in reverse order to collect information.
  • the read time be very short.
  • the circuit may be divided, or a very fast drive integrated circuit may be used, to solve the problem related to the read time.
  • This method reads out information of the intersections between the pattern electrodes without using the thin film transistor, thereby simplifying the manufacturing process and easily achieving the manufacture of a detective circuit.
  • the detecting method described above with reference to FIGS. 5 and 6 is applicable to the conventional plasma display X-ray detector and the conventional detector using the TFT, although the detecting method is used to collect the image signal of the X-ray detector according to the present invention. Consequently, the present invention has an advantage in that it is possible to analyze signals generated from the conventional detector and collect a signal amount, thereby achieving the detection.
  • Mode for the Invention
  • FIG. 7 is a view schematically illustrating an X-ray detector for image detection according to an embodiment of the present invention.
  • the X-ray detector for image detection according to the present invention includes a lower substrate 310, a gas layer 330 containing a penning gas or a nixed penning gas, and an upper substrate 320.
  • the X-ray detector for image detection according to the present invention further includes a circuit unit 340 for reading the number of electrons generated from a radioactive ray transmitted through a human body to acquire an X-ray image.
  • the lower substrate 310 includes a substrate part 311, second electrodes 312 formed on the substrate part, and isolation films 313 formed on the substrate part such that the isolation films 313 are disposed between the respective second electrodes.
  • the isolation films 313 are formed between the respective second electrodes 312 for constituting pixels, each of which is the unit element of an image.
  • the height of the isolation films 313 be higher than that of the second electrodes 312 to divide the respective pixels.
  • the respective pixels are fully isolated, with the result that the flow of the penning gas is interrupted.
  • the isolation films 313 have a height higher than that of the second electrodes 312 but not coming into contact with the upper substrate 320.
  • some of the isolation films 313 may come into contact with the upper substrate 320 while some of the isolation films 313 may not come into contact with the upper substrate 320 such that gas can flow over the isolation films 313.
  • the isolation films 313 may be made of ceramic, plastic, or polymer.
  • the upper substrate 320 includes a substrate part 321 and a first electrode 322.
  • the upper substrate 320 be made of a material exhibiting high X-ray transnissivity and be formed as thin as possible in order to maximize X-ray transnissivity.
  • the second electrodes 312 of the lower substrate 310 and the first electrode 313 of the upper substrate 320 intersect each other, and one pixel is formed at each intersection.
  • the upper substrate 320 may further includes a dielectric 323 disposed on the first electrode 322 for preventing current conduction between the first electrode 322 and the second electrodes 312 and the occurrence of a noise.
  • the dielectric 323 may be made of various materials.
  • the dielectric is made of PbO. More specifically, the dielectric is preferably made of one or more selected from a group consisting of Pb oxide, S oxide, B oxide, Al oxide, Ba oxide, Sr oxide, Zn oxide, Bi oxide, Ti oxide, Co oxide, Ca oxide, P oxide, R oxide, and Sn oxide (PbQ SO , B O , Al O , BaQ SrQ ZnQ Bi O , TiO , CoQ Bi-based
  • the patterned first and second electrodes 322 and 312 and the dielectric 323 preferably have a thickness of 1 to 100 um.
  • the width and the length of the electrodes and the dielectric preferably vary depending upon the size of the X-ray detector.
  • the gas layer 330 serves to convert the X-ray signal into an electric signal.
  • the gas layer 330 contains a pure penning gas or a nixed penning gas.
  • the pure penning gas contained in the gas layer 330 may be any one selected from a group consisting of Xe, Kr, Ar, Ne, and He.
  • the nixed penning gas may be a mixture of two or more pure penning gases specified above.
  • the nixed penning gas is any one selected from a group consisting of Xe+Ne, Kr+Ne, Ar+Ne, Xe+CO , Kr+CO , Ar+CO , Xe+CH , Kr+CH , and Ar+CH .
  • the amount of the pure penning gas or the nixed penning gas may be adjusted using pressure. It is preferred to maintain the gas pressure as high as possible to increase X- ray sensitivity.
  • the supporters may be formed in various shapes, such as a circular shape, an elliptical shape, and a polygonal shape. Also, the supporters are made of a material exhibiting high physical/chenical stability, preferably zirconium. [149] It is preferred for the supporters to be located at the position where the upper substrate and the lower substrate confront each other not to disturb the transmission of the X-ray such that no dead cells are created at the X-ray image.
  • FIG. 8 is a view schematically illustrating an image-detecting method according to an embodiment of the present invention.
  • the gas layer contains Xe as a penning gas.
  • an X-ray transmitted through a human body, collides with penning gas molecules contained in the gas layer.
  • an X-ray transmitted through a human body, collides with penning gas molecules contained in the gas layer.
  • the isolation films 313 may be formed in various methods.
  • the isolation films 313 may be formed by etching, screen printing, or deposition.
  • the circuit unit 340 reads a signal amount of the accumulated electrons to detect an image.
  • the circuit unit 340 reads out an image signal, to acquire image information, by a passive matrix type readout method of sequentially reading out a signal amount of the electrons and holes accumulated at the respective pixels corresponding to the intersections between the second electrodes 312 and the first electrode 322.
  • FIG. 11 is a view illustrating a gas type X-ray detector according to an embodiment of the present invention.
  • the X-ray detector is constructed to read out a signal without using a thin film transistor.
  • the X-ray detector according to the present invention includes upper and lower substrates 410 and 420, and a first electrode 450a, a second electrode 450b, and a third electrode 450c formed between the upper substrate 410 and the lower substrate 420.
  • the upper substrate and the lower substrate are constructed in a structure in which the upper substrate and the lower substrate are opposite to each other.
  • the upper substrate and the lower substrate are connected to each other by an outer sealing member 440 to constitute a hermetically sealed structure.
  • supporters 430 are mounted between the upper substrate and the lower substrate for supporting the upper substrate and the lower substrate, such that the upper substrate and the lower substrate are spaced a predetermined distance from each other, while forming several hermetically sealed spaces.
  • the supporters may be formed in the shape of a partition.
  • the supporters may be manufactured by a mold such that the supporters are formed in the shape of a partition.
  • the supporters may be integrally formed at the upper substrate or the lower substrate such that the supporters and the upper substrate or the lower substrate are constructed in an integrated structure
  • the hermetically sealed space formed by the above process is constructed in a hermetically sealed structure the interior of which is filled with gas.
  • the interior of the hermetically sealed space is filled with gas g, which responds to an X- ray to emit electrons.
  • the gas filling space serves to convert the X-ray signal into an electric signal.
  • the gas filling space is filled with a pure penning gas or a nixed penning gas in a hermetically sealed state. More specifically, the pure penning gas contained in the gas layer may be any one selected from a group consisting of Xe, Kr, Ar, Ne, and He.
  • the nixed penning gas may be a mixture of two or more pure penning gases specified above.
  • the nixed penning gas is any one selected from a group consisting of Xe+Ne, Kr+Ne, Ar+Ne, Xe+CO , Kr+CO , Ar+CO , Xe+CH ,
  • the supporters 430 formed in the shape of a partition, serve to secure the gas filling space and, at the same time, prevent the occurrence of a crosstalk phenomenon in which electrons affect the neighboring pixels.
  • the first electrode 450a is formed at the bottom of the upper substrate 410. At the bottom of the first electrode is preferably formed a dielectric 460.
  • the dielectric 460 serves to prevent the occurrence of a short circuit between the electrodes.
  • the second and third electrodes are formed at the lower substrate.
  • the second and third electrodes are formed at the top and the bottom of the lower substrate, respectively. In this case, there is no need to form an additional dielectric layer.
  • the first electrode 450a and the second electrode 450b are patterned electrodes.
  • the first electrode 450a and the second electrode 450b are formed at the upper and lower substrates in the longitudinal direction or in the lateral direction in a structure in which the respective electrodes intersect each other.
  • the third electrode 450c is preferably formed on the whole surface of the lower substrate.
  • the first electrode 450a and the third electrode 450c are disposed at the two substrates, respectively, to apply an electric field.
  • the second electrode 450b serves to transmit a signal to the outside. That is, when the gas collides with the X-ray, with the result that electrons are generated, the second electrode 450b (the readout electrode) reads out the information.
  • FIG. 12 is a view illustrating another arrangement of the electrodes.
  • the arrangement of the other components shown in FIG. 12 is identical to that in FIG. 2 except that the second electrode and the third electrode are formed at the top of the lower substrate 420, and a dielectric is formed between the respective electrodes for preventing the occurrence of a short circuit between the respective electrodes.
  • FIG. 13 is a view illustrating that electron information generated when an X-ray is irradiated to one pixel of the X-ray detector including the three electrodes as described above is read out and displayed on a screen.
  • the electron information generated from each pixel is inputted to a circuit through the readout electrode (the third electrode) to form a peak for each pixel.
  • the peak information is calculated and displayed to acquire an X-ray image.
  • the supporters according to the present invention formed in the shape of a partition, prevent the occurrence of a crosstalk phenomenon and thus the interference between signals, whereby it is possible to read accurate information. Consequently, the present invention preferably further includes a circuit unit for reading out a signal amount formed from voltage applied by the first and third electrodes through the second electrode.
  • a signal amount formed by the electrons accumulated through the second electrode is read out by the circuit unit to detect the image. More specifically, the circuit unit reads out an image signal, to acquire image information, by a passive matrix type readout method of sequentially reading out a signal amount of the electrons and holes accumulated at the respective pixels.
  • the X-ray detector including the three electrodes according to the present invention is easy to manufacture. Also, the present invention does not use a high-priced thin film transistor. Consequently, it is possible to manufacture the X-ray detector at low costs. In addition, the X-ray detector according to the present invention exhibits high detection efficiency.

Landscapes

  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

L'invention concerne un détecteur à rayons X mettant en oeuvre un procédé de détection du type à gaz sans avoir recours à un transistor à couche mince ou à des partitions d'écran plasma (PDP). De ce fait, la fabrication du détecteur à rayons X est améliorée, ses coûts de production sont réduits et,simultanément, sa sensibilité est grandement accrue. L'invention concerne également un procédé de détection à rayons X permettant de produire facilement des micro pixels par utilisation d'une pluralité de lignes d'électrodes et de faciliter durablement la détection d'informations, ce qui permet de recueillir efficacement des informations d'image mêmes relatives à un substrat de grande dimension. Selon l'invention, des couches d'isolation sont formés sur des pixels de partition sans interférence entre les pixels supérieurs et inférieurs et entre les pixels droits et gauches, ce qui permet d'acquérir une qualité d'image élevée. Le détecteur à rayons X est capable de lire un signal de détection par l'intermédiaire de trois électrodes séparées, sans utiliser de transistor à couche mince, au moyen d'un procédé de détection du type à gaz, ce qui permet de réduire les coûts de fabrication dudit détecteur à rayons X, d'améliorer sa facilité d'utilisation et de produire une image numérique de rayons radioactifs à degré d'efficacité élevé.
PCT/KR2008/003043 2007-05-31 2008-05-30 Détecteur à rayons x et son procédé de détection d'image Ceased WO2008147135A1 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR10-2007-0053218 2007-05-31
KR1020070053218A KR20080105518A (ko) 2007-05-31 2007-05-31 엑스레이 디텍터 및 엑스레이 디텍팅 방법
KR10-2007-0110517 2007-10-31
KR1020070110517A KR20090044424A (ko) 2007-10-31 2007-10-31 Ｘ-레이 이미지 검출용 디텍터 및 그 방법
KR10-2007-0138121 2007-12-27
KR1020070138121A KR20090070201A (ko) 2007-12-27 2007-12-27 엑스레이 검출기

Publications (1)

Publication Number Publication Date
WO2008147135A1 true WO2008147135A1 (fr) 2008-12-04

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PCT/KR2008/003043 Ceased WO2008147135A1 (fr) 2007-05-31 2008-05-30 Détecteur à rayons x et son procédé de détection d'image

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WO (1) WO2008147135A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9871073B1 (en) 2016-11-22 2018-01-16 General Electric Company Scintillator sealing for solid state X-ray detector
US10299744B2 (en) 2016-11-17 2019-05-28 General Electric Company Scintillator sealing for solid state x-ray detector
US10631801B2 (en) 2016-11-17 2020-04-28 General Electric Company Scintillator sealing for solid state X-ray detector

Citations (4)

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KR20030031927A (ko) * 2003-01-30 2003-04-23 학교법인 인제학원 패시브 매트릭스 형태의 엑스레이 검출기
KR20030031924A (ko) * 2003-01-27 2003-04-23 학교법인 인제학원 가스 전하증폭층을 구비한 엑스-레이 이미지 디텍터
KR20030036261A (ko) * 2003-01-16 2003-05-09 학교법인 인제학원 이피아이디 시스템의 내(耐)방사선 비디콘 엑스레이디텍터
KR20040101171A (ko) * 2004-11-12 2004-12-02 남상희 엘시디 엑스레이 이미지 디텍터 기판

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Publication number Priority date Publication date Assignee Title
KR20030036261A (ko) * 2003-01-16 2003-05-09 학교법인 인제학원 이피아이디 시스템의 내(耐)방사선 비디콘 엑스레이디텍터
KR20030031924A (ko) * 2003-01-27 2003-04-23 학교법인 인제학원 가스 전하증폭층을 구비한 엑스-레이 이미지 디텍터
KR20030031927A (ko) * 2003-01-30 2003-04-23 학교법인 인제학원 패시브 매트릭스 형태의 엑스레이 검출기
KR20040101171A (ko) * 2004-11-12 2004-12-02 남상희 엘시디 엑스레이 이미지 디텍터 기판

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10299744B2 (en) 2016-11-17 2019-05-28 General Electric Company Scintillator sealing for solid state x-ray detector
US10631801B2 (en) 2016-11-17 2020-04-28 General Electric Company Scintillator sealing for solid state X-ray detector
US9871073B1 (en) 2016-11-22 2018-01-16 General Electric Company Scintillator sealing for solid state X-ray detector

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