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WO2008146287A2 - Filtre passe-bande pour rayonnement solaire - Google Patents

Filtre passe-bande pour rayonnement solaire Download PDF

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Publication number
WO2008146287A2
WO2008146287A2 PCT/IL2008/000724 IL2008000724W WO2008146287A2 WO 2008146287 A2 WO2008146287 A2 WO 2008146287A2 IL 2008000724 W IL2008000724 W IL 2008000724W WO 2008146287 A2 WO2008146287 A2 WO 2008146287A2
Authority
WO
WIPO (PCT)
Prior art keywords
solar radiation
photovoltaic cell
radiation
sub
range
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IL2008/000724
Other languages
English (en)
Other versions
WO2008146287A3 (fr
Inventor
Eli Shifman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aerosun Technologies AG
Original Assignee
Aerosun Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aerosun Technologies AG filed Critical Aerosun Technologies AG
Publication of WO2008146287A2 publication Critical patent/WO2008146287A2/fr
Publication of WO2008146287A3 publication Critical patent/WO2008146287A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0004Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
    • G02B19/0019Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having reflective surfaces only (e.g. louvre systems, systems with multiple planar reflectors)
    • G02B19/0023Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having reflective surfaces only (e.g. louvre systems, systems with multiple planar reflectors) at least one surface having optical power
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24HEATING; RANGES; VENTILATING
    • F24SSOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
    • F24S23/00Arrangements for concentrating solar-rays for solar heat collectors
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0694Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror with variable magnification or multiple imaging planes, including multispectral systems
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0038Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with ambient light
    • G02B19/0042Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with ambient light for use with direct solar radiation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/40Optical elements or arrangements
    • H10F77/42Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/488Reflecting light-concentrating means, e.g. parabolic mirrors or concentrators using total internal reflection
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24HEATING; RANGES; VENTILATING
    • F24SSOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
    • F24S23/00Arrangements for concentrating solar-rays for solar heat collectors
    • F24S23/70Arrangements for concentrating solar-rays for solar heat collectors with reflectors
    • F24S23/71Arrangements for concentrating solar-rays for solar heat collectors with reflectors with parabolic reflective surfaces
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24HEATING; RANGES; VENTILATING
    • F24SSOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
    • F24S23/00Arrangements for concentrating solar-rays for solar heat collectors
    • F24S23/70Arrangements for concentrating solar-rays for solar heat collectors with reflectors
    • F24S23/79Arrangements for concentrating solar-rays for solar heat collectors with reflectors with spaced and opposed interacting reflective surfaces
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/40Solar thermal energy, e.g. solar towers
    • Y02E10/44Heat exchange systems
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/52PV systems with concentrators

Definitions

  • This invention relates to solar radiation utilization systems, in particular systems utilizing photovoltaic cells.
  • Solar concentrators are used to concentrate sunlight/solar radiation for various applications such as solar thermal, concentrated photovoltaic or hybrid lighting, and usually employ a primary concentrator in the form of a reflective type i.e. mirror or a diffractive type such as a fresnel lens adapted for concentrating the solar radiation into a predetermined target.
  • Solar utilization systems are also known to comprise secondary concentrators, often used for any one of several reasons: a. increasing the concentration level obtained by the primary concentrator; b. redirecting the concentrated beam into the receiver; c. homogenizing the beam on the receiver; d. offset for tracking and misalignment errors;
  • Spectrolab discloses the use of photovoltaic cells comprising several layer adapted for producing electrical current from different wavelength ranges. Similar subject matter is disclosed in "Ultrahigh efficiency microconcentrators PV” to CalTech and the Aonex corporation. SUMMARY OF THE INVENTION
  • a solar radiation band pass filter system for producing electrical current from concentrated solar radiation in the wavelength range W ranging from a wavelengths V 1 - ⁇ v 2 , comprising at least three sub- ranges Wi including V 1 , W 3 including v 2 , and W 2 separating W 1 and W 3 , and not including V 1 and v 2 , said system comprising a beam splitter adapted for splitting said concentrated solar radiation into a first beam carrying radiation of sub-range W 2 and directed in a first direction, and a second beam carrying radiation of sub-range W 1 and W 3 directed in a second direction, said system further comprising a first photovoltaic receiver adapted for producing electrical current from said first beam, and a second photovoltaic receiver adapted to produce electrical current from said second beam.
  • the wavelength range W may be 300 ⁇ 1800nm, and the sub-ranges may be, for example, 300 ⁇ 800nm, 800 ⁇ l lOOnm and 1100 ⁇ 1800nm for W 1 , W 2 and W 3 respectively.
  • the system may be adapted to constitute a part of a system for solar utilization comprising a primary concentrator adapted for receiving solar radiation incident thereon and concentrating it towards a second concentrator in the form of a beam splitter.
  • the second concentrator may be associated with said first photovoltaic receiver and adapted for further concentration of said solar radiation into a second receiver.
  • Said first receiver may comprise therein a first photovoltaic cell and said second receiver may comprise therein a second photovoltaic cell.
  • the system may be of a cassegrainian design, wherein said first beam splitter is covered by a dichroic coating, allowing radiation of the first beam with second subrange W 2 to penetrate said coating and reach said first receiver, while deflecting said second beam of sub-ranges W 1 and W 3 together towards said second photovoltaic cell.
  • the first photovoltaic receiver may be adapted for producing current from said first beam, and may comprise a first photovoltaic cell made, for example, of silicon. Silicon material has inherent characteristics including sensitivity to the specific wavelength range of W 2 as well as an atomic spacing A 1 . Due to the fact that said first photovoltaic cell receives solar radiation of an essentially limited wavelength range (800 ⁇ l lOOnm), the amount of heat to be removed from the first receiver is consequently limited, allowing the design of a heat sink for said receiver to be of dimensions minute enough so as not to obstruct solar radiation from said first concentrator. Silicon has a band gap of 1.12ev and may thus be adapted to produce electrical current from solar radiation of up to 11 OOnm.
  • the second photovoltaic cell may comprise several layers, each of a different material, and having inherent characteristics adapted for producing electrical current from a predetermined wavelength range.
  • the photovoltaic cell may be formed of a first material sensitive to said first sub-range W 1 and a second material sensitive to said thirds sub-range W 3 . Furthermore, several materials may be used for each sub-range.
  • said photovoltaic cell may be of a triple junction type comprising a first layer of InGaP (Indium Gallium Phosphorus) which has a band gap of 1.8ev and is sensitive to wavelengths up to about 600nm, GaAs (Gallium Arsenide) which has a band gap of 1.4ev and is sensitive to wavelengths up to about 800nm, and Ge (Germanium) which has a band gap of 0.67ev and is sensitive to wavelengths of up to about 1800.
  • InGaP Indium Gallium Phosphorus
  • GaAs Ga Arsenide
  • Ge Germanium
  • the materials used in the second photovoltaic cell may have a similar atomic spacing A 2 ⁇ A 1 allowing the production of said photovoltaic cell in concentional and cost efficient manner without the use of adhesives, i.e. crystal growing method resulting in a monolithic cell.
  • the materials may be of various atomic spacing requiring the use of an adhesive to attach the layers to one another.
  • Each of the materials may be sensitive to solar radiation of a different wavelength. It is known in the art to use a beam splitter in order to deflect towards the second receiver solar radiation in the range of about 400 ⁇ 1800nm, in which a photovoltaic cell as described above is positioned.
  • the layers of the above triple junction photovoltaic cell needs to be current matched, i.e. adjusting the amount of current produced by all three materials to be the same.
  • the gap between the wavelength sensitivity of Germanium (1800nm, 0.67ev) and that of Gallium Arsenide (800nm, 1.4ev) is much greater than that of the gap between Gallium Arsenide (800nm, 1.4ev) and Indium Gallium Phosphorus (600nm, 1.8ev).
  • the germanium receives an excess amount of solar radiation rendered misused, thereby complicating current matching and reducing the efficiency of the entire photovoltaic cell. This is a common problem in the field.
  • the solar radiation reflected off the beam splitter towards the second receiver may be of two wavelength sub-ranges W 1 400 ⁇ 800nm and W 3 1100 ⁇ 1800nm, while solar radiation of wavelength sub-range W 2 800 ⁇ l lOOnm may be allowed to pass towards the first photovoltaic cell. This yields that the amount of solar radiation incident on the Germanium layer is now of lesser amount compared to conventional configurations.
  • the first photovoltaic cell may be made of a monolithic piece of silicon, adapted to produce electrical current from the solar radiation directed thereto in the specific wavelength range of 800 ⁇ l lOOnm.
  • the second photovoltaic cell may be a standard cell as described above, i.e. InGaP+GaAs+Ge but avoiding the excess solar radiation reflected on the Germanium since it now receives just wavelengths of 1100 ⁇ 1800.
  • the entire wavelength range from 400 ⁇ 1800 is optimally utilized, and allows a convenient current matching between all three layers of the second photovoltaic cell and the current of the first photovoltaic cell.
  • the currents produced by the silicon and the triple junction photovoltaic cell need to be current matched for optimal operation of the system.
  • Current matching may be achieved, inter alia, by adding
  • a combination of the above materials may produce a theoretical efficiency of about 58%. It would be appreciated that a number of variations and optimizations may be achieved by using a variety of materials with different inherent characteristics.
  • the solar radiation directed towards said second photovoltaic cell may be further split into its two sub-range W 1 and W 3 , each being directed towards a photovoltaic cell specifically designed to produce an electrical current therefrom.
  • a significant advantage of the system according to the present invention is the ability to efficiently utilize a middle portion of the solar radiation wavelength range W 2 in a first photovoltaic cell separate from said second photovoltaic cell, having an atomic spacing different from the materials forming the second cell, and each of the cells being monolithic.
  • a beam splitter to be used in a solar radiation band pass filter system for producing electrical current from concentrated solar radiation in the wavelength range W ranging from a wavelengths V 1 - ⁇ v 2 , comprising at least three sub-ranges W 1 including V 1 , W 3 including
  • Fig. IA is a schematic view of a solar utilization system comprising the band pass filter system according to the present invention.
  • Fig. IB is a schematic diagram of the solar radiation wavelength range after passing the band pass filter according to the present invention
  • Fig. 2 is a schematic view of the solar radiation spectrum and wavelength subranges according to the prior art
  • Fig. 3 A is a schematic view of the solar radiation spectrum and wavelength subranges used by a receiver according an embodiment to the present invention
  • Fig. 3B is a schematic view of the solar radiation spectrum and wavelength sub- ranges used by a receiver according an embodiment to the present invention. DETAILED DESCRIPTION OF EMBODIMENTS
  • a solar utilization system generally designated 10 comprising a primary reflective concentrator 20, a secondary reflective concentrator in the form of a beam splitter 30, a receiver with a photovoltaic cell 40, a second receiver with a photovoltaic cell 50, and a shielding cover 18 adapted to protect the system 10 from environmental damage such as dust, oxidation etc., as well as preventing losses of radiation.
  • the primary concentrator 20 and the beam splitter 30 are located along a main optical axis thereof X-X.
  • the primary reflective concentrator 20 is in the form of a parabolic dish having a reflective surface R p adapted to reflect incident light-beams LB to its focal pointy.
  • the focal point yj is located adjacent the secondary reflective concentrator, and behind reflective surface R 5 thereof.
  • the beam splitter 30 is in the form of a conical collector 32 made of a transparent material, e.g. glass, having an input end which is a parabolic reflective surface R s .
  • the reflective surface R s is applied with a dichroic coating allowing solar radiation of a predetermined wavelength range W 2 of about ⁇ OO ⁇ HOOnm to penetrate the reflective surface R s and enter into a collector 32.
  • the collector 32 then directs the light-beams by inner reflection to a photovoltaic cell 40.
  • the remainder of light beams of wavelength sub-ranges Wi 400 ⁇ 800nm, and W 3 1100 ⁇ 1800nm are reflected by the reflective surface R s to the focal point f s of the secondary concentrator.
  • the focal point f s of the secondary reflective concentrator is located under the primary concentrator 20, and is associated with a second photovoltaic cell 50.
  • the primary reflective concentrator 20 is formed with a hole in its middle 22 allowing light beams reflected off the secondary concentrator 20 to reach the second photovoltaic cell 50.
  • splitting the solar radiation into wavelength ranges allows a more efficient use of photovoltaic cells, wherein each cell is specially designed to produce energy from a predetermined range of solar radiation. This in turn reduces the amount of radiation incident on each photovoltaic cell, consequently making it absorb less heat, reducing the risk of damage to the photovoltaic cells 40, 50.
  • the amount of heat which needs to be removed therefrom is essentially low, allowing the heat sink installed on the beam splitter 30 to be designed to have dimension small enough so as not to obstruct solar radiation from the primary concentrator 20.
  • Fig. 2 a scheme of the solar radiation spectrum is shown along with voltage (ev) values for a standard triple junction photovoltaic cell comprising three layers made of InGaP, GaAs and Ge. In this case all the solar radiation in the wavelength range of 400 ⁇ 1800 is incident on the triple junction photovoltaic cell.
  • the solar radiation reflected off the beam splitter 30 towards the second receiver and photovoltaic cell 50 is of two wavelength sub-ranges W 1 600 ⁇ 800nm and W 3 1100 ⁇ 1800nm, while solar radiation of wavelength sub-range W 2 800 ⁇ 1100nm is allowed to pass towards the first photovoltaic cell 40.
  • the first photovoltaic cell may be made of a monolithic piece of silicon, which has a band gap of 1.12ev and is thus adapted to produce electrical current from the solar radiation directed thereto in the specific wavelength range of 800 ⁇ 1100nm.
  • the second photovoltaic cell 50 may be a standard cell as described above, i.e. InGaP+GaAs+Ge but receiving less solar radiation thus avoiding the excess radiation on the Germanium since it now receives just wavelengths of 1100 ⁇ 1800.
  • the layers of the standard photovoltaic cell may be further improved by adding Aluminum to the layers, resulting in layers which are more sensitive to solar radiation, i.e. AlInGaP having a band gap of 2.0ev, AlGaAs with a band gap of 1.49ev and Ge with a band gap of 0.67ev.
  • AlInGaP having a band gap of 2.0ev
  • AlGaAs with a band gap of 1.49ev
  • Ge with a band gap of 0.67ev.
  • Such a configuration may produce an efficiency of about 57%.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Chemical & Material Sciences (AREA)
  • Thermal Sciences (AREA)
  • Sustainable Energy (AREA)
  • Combustion & Propulsion (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne un système de filtre passe-bande pour rayonnement solaire servant à produire un courant électrique à partir d'un rayonnement solaire concentré. La longueur d'onde du rayonnement solaire se situe dans une plage W s'étendant des longueurs d'ondes v1 à v2 et comprenant au moins trois sous-plages : W1 comprenant v1, W3 comprenant v2, et W2 séparant W1 et W3, et ne comprenant pas v1 et v2. Le système comprend un diviseur de faisceau apte à diviser le rayonnement solaire concentré en un premier faisceau portant le rayonnement de la sous-plage W2 et dirigé dans une première direction; et un second faisceau portant un rayonnement des sous-plages W1 et W3 dirigé dans une seconde direction. Le système comprend en outre un premier récepteur photovoltaïque pouvant produire un courant électrique à partir du premier faisceau; et un second récepteur photovoltaïque apte à produire un courant électrique à partir du second faisceau.
PCT/IL2008/000724 2007-05-31 2008-05-29 Filtre passe-bande pour rayonnement solaire Ceased WO2008146287A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US92478307P 2007-05-31 2007-05-31
US60/924,783 2007-05-31

Publications (2)

Publication Number Publication Date
WO2008146287A2 true WO2008146287A2 (fr) 2008-12-04
WO2008146287A3 WO2008146287A3 (fr) 2009-04-30

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PCT/IL2008/000724 Ceased WO2008146287A2 (fr) 2007-05-31 2008-05-29 Filtre passe-bande pour rayonnement solaire

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2951251A1 (fr) * 2009-10-08 2011-04-15 Soitec Silicon On Insulator Systeme de production d'energie combinant l'energie solaire thermique et l'energie photovoltaique
WO2014036406A1 (fr) * 2012-08-30 2014-03-06 Dow Global Technologies Llc Système photovoltaïque doté d'optiques de division de spectre empilées et réseau photovoltaïque accordé aux tranches spectrales résultantes produites par les optiques de division de spectre
EP2827383A1 (fr) * 2013-07-15 2015-01-21 Akademia Gorniczo-Hutnicza im. Stanislawa Staszica w Krakowie Convertisseur d'énergie solaire hybride
WO2016098337A1 (fr) * 2014-12-19 2016-06-23 Sharp Kabushiki Kaisha Concentrateur solaire à optiques de poursuite asymétriques intégrées

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6469241B1 (en) * 2001-06-21 2002-10-22 The Aerospace Corporation High concentration spectrum splitting solar collector
IL157716A0 (en) * 2003-09-02 2004-03-28 Eli Shifman Solar energy utilization unit and solar energy utilization system
US7081584B2 (en) * 2003-09-05 2006-07-25 Mook William J Solar based electrical energy generation with spectral cooling
ITMI20050590A1 (it) * 2005-04-08 2006-10-09 Antonini Andrea Sistema fotovoltaico a concentrrazione di radiazione basato su selezione spettrale
DE102005054364A1 (de) * 2005-11-15 2007-05-16 Durlum Leuchten Solarkollektor mit Kältemaschine
US7741557B2 (en) * 2005-12-19 2010-06-22 Corning Incorporated Apparatus for obtaining radiant energy

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2951251A1 (fr) * 2009-10-08 2011-04-15 Soitec Silicon On Insulator Systeme de production d'energie combinant l'energie solaire thermique et l'energie photovoltaique
WO2014036406A1 (fr) * 2012-08-30 2014-03-06 Dow Global Technologies Llc Système photovoltaïque doté d'optiques de division de spectre empilées et réseau photovoltaïque accordé aux tranches spectrales résultantes produites par les optiques de division de spectre
EP2827383A1 (fr) * 2013-07-15 2015-01-21 Akademia Gorniczo-Hutnicza im. Stanislawa Staszica w Krakowie Convertisseur d'énergie solaire hybride
WO2016098337A1 (fr) * 2014-12-19 2016-06-23 Sharp Kabushiki Kaisha Concentrateur solaire à optiques de poursuite asymétriques intégrées

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