WO2008038583A1 - Cmp conditioner and process for producing the same - Google Patents
Cmp conditioner and process for producing the same Download PDFInfo
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- WO2008038583A1 WO2008038583A1 PCT/JP2007/068356 JP2007068356W WO2008038583A1 WO 2008038583 A1 WO2008038583 A1 WO 2008038583A1 JP 2007068356 W JP2007068356 W JP 2007068356W WO 2008038583 A1 WO2008038583 A1 WO 2008038583A1
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- WIPO (PCT)
- Prior art keywords
- protective layer
- layer
- fine particles
- abrasive
- abrasive grains
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/12—Dressing tools; Holders therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/04—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
- B24D3/06—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements
- B24D3/08—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements for close-grained structure, e.g. using metal with low melting point
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Definitions
- the present invention relates to a CMP conditioner used for conditioning a polishing pad of a CMP (Chemical Mechanical Polishing) apparatus for polishing a semiconductor wafer or the like, and a method for manufacturing the same.
- CMP Chemical Mechanical Polishing
- Patent Document 1 discloses that a plurality of cylindrical protrusions are formed on the upper surface of a disk-shaped substrate (base metal) at intervals, and the surface of these protrusions is formed. Proposals have been made in which a plurality of abrasive grains such as diamond are fixed by a metal-bonded binder phase.
- Patent Document 2 proposes brazing diamond abrasive grains
- Patent Document 3 further discloses that SiC or the like is formed on the surface of the metal binder phase to which the abrasive grains are fixed. It has been proposed to apply ceramic coatings by vapor phase coating techniques such as CVD and ion plating.
- a highly acidic or alkaline corrosive slurry is used when polishing a semiconductor wafer or the like, so that a metal bond that holds abrasive grains is used.
- the layer is corroded (eluted) by the slurry and the abrasive grains fall off, and the semiconductor grains are damaged by the dropped abrasive grains to cause scratches.
- the abrasive grains are diamond and the binder phase is a metal-plated phase such as nickel, the wettability of the metal cling to the abrasive grains is poor, so the boundary between the two is minimal. As a result, a gap is generated, and this gap force also enters the slurry and corrodes the metal adhesion phase. As a result, the removal of the abrasive grains is further promoted.
- Patent Document 1 Japanese Patent Laid-Open No. 2001-71269
- Patent Document 2 Japanese Patent Laid-Open No. 2002-273657
- Patent Document 3 Japanese Patent Laid-Open No. 2001-210613
- Patent Document 4 Japanese Patent No. 3348154
- Patent Document 5 Japanese Patent Application Laid-Open No. 2002-309383
- Patent Document 6 Japanese Unexamined Patent Publication No. 2003-034003
- Patent Document 7 Japanese Unexamined Patent Application Publication No. 2004-091614
- Patent Document 8 Japanese Unexamined Patent Publication No. 2003-183848
- the present invention has been made under such a background, and it is possible to reliably prevent the abrasive grains from dropping even in a highly corrosive slurry used in a CMP apparatus and to suppress the generation of scratches.
- the purpose is to provide a possible CMP conditioner!
- the CMP conditioner has the abrasive layer formed by adhering abrasive grains in the metal binder phase on one surface of the grindstone base, and at least the abrasive conditioner described above.
- An oxide film prepared by a sol-gel method is formed as a first protective layer on the surface of the metal binder phase of the grain layer, and the surface of the first protective layer is polycrystalline,
- a thick oxide film substantially free of a grain boundary layer composed of a glass layer was formed as a second protective layer at the interface.
- the thick film is a film having a thickness of 1 ⁇ m or more.
- the first protective layer is at least near the joint between the abrasive grains and the metal binder phase.
- the power is formed so as to cover the metal binder phase.
- Such a structure is made possible by forming an oxide film as a first protective layer by a sol-gel method.
- the sol-gel method is a method of forming an oxide film using a solution, the solution is attracted to the periphery of the abrasive grains by surface tension, and as a result, the film thickness at the periphery of the abrasive grains is thicker than other parts. Can be considered.
- the formed oxide film covers the metal binder phase, and has excellent corrosion resistance particularly in the periphery of the abrasive grains.
- the first protective layer has a thin film thickness in other portions except the peripheral portion of the abrasive grains, and stable corrosion resistance cannot be obtained. Therefore, a thick oxide film is formed on the surface of the first protective layer, which is a second protective layer, which is polycrystalline, and a grain boundary layer composed of a glass layer does not substantially exist at the interface between the crystals. By doing so, stable corrosion resistance can be obtained.
- the second protective layer is preferably not formed on the surface of the abrasive grains, but only on the surface of the first protective layer. Since it is not formed on the surface of the abrasive grains, it does not cause problems such as changes in the polishing performance of the CMP conditioner.
- the second protective layer is desirably an oxide having excellent corrosion resistance, such as alumina.
- a method for producing the second protective layer a method in which an aerosol in which fine particles of a brittle material are dispersed in a gas is jetted onto the first protective layer to collide to form a thick oxide film.
- the above method is a method recognized as an aerosol deposition method, as described in Patent Documents 4 to 7.
- the aerosol deposition method is a technique for forming a thick ceramic film on various substrates.
- the aerosol in which ceramic fine particles are dispersed in a gas, is sprayed from a nozzle toward the substrate, and metal, glass, ceramics, Fine particles collide with a base material such as plastic, and the impact of the impact causes the fine particles to be deformed or crushed and joined together to directly form a membrane structure composed of the constituent materials of the fine particles on the base material.
- a structure can be formed at room temperature that does not require a heating means, and a structure having mechanical strength equivalent to that of a fired body can be obtained.
- the apparatus used in this method basically includes an aerosol generator for generating an aerosol and a nozzle for injecting the aerosol toward a substrate.
- a position control means that moves and swings the base material and the nozzle relative to each other. It is common to have a chamber for forming the structure and a vacuum pump, and a gas generation source for generating aerosol.
- the process temperature of the aerosol deposition method is room temperature, a temperature sufficiently lower than the melting point of the fine particle material, that is, several hundred. There is one characteristic power s where structures are formed below C.
- the fine particles used are mainly brittle materials such as ceramics, fine particles of the same material can be used alone or in combination, and different types of fine particles can be mixed or combined. Is possible. It is also possible to use some metal materials or organic materials mixed with ceramic fine particles, or coated on the surface of ceramic fine particles. Even in these cases, the main component of the structure formation is ceramics.
- the film structure formed by this method when crystalline fine particles are used as a raw material, the film structure is a polycrystal having a crystallite size smaller than that of the raw material fine particles. It can be said that there is substantially no crystal orientation, and there is substantially no grain boundary layer composed of a glass layer at the interface between ceramic crystals, and part of the film structure is eaten on the substrate surface! /, Many anchor layers are formed!
- the membrane structure formed by this method clearly has a sufficient strength, unlike a so-called green compact in which fine particles are packed together by pressure and keeps its form by physical adhesion. ing.
- the fact that the fine particles are crushed and deformed is determined by measuring the fine particles used as a raw material and the crystallite size of the formed film structure by an X-ray diffraction method. it can.
- the average particle size identified by particle size distribution measurement or scanning electron microscope is 10 m or less.
- the average particle size is 50 m or less.
- the aforementioned fine particles are dispersed in a gas such as helium, nitrogen, argon, oxygen, dry air, or a mixed gas thereof, and it is desirable that the primary particles are dispersed. Containing aggregated grains.
- the gas pressure and temperature of the aerosol are arbitrary.
- the concentration of fine particles in the gas is 0.0003mL / L at the time of injection from the nozzle when the gas pressure is converted to 1 atm and the temperature is converted to 20 ° C. Desirable for structure formation to be in the range of 5 mL / L! /.
- a layer with a thickness (usually several nm to several ⁇ m) located at the grain boundary, which usually has an amorphous structure different from the crystal structure in the crystal grain, and in some cases impurities Accompanied by segregation.
- both the first protective layer having excellent corrosion resistance in the periphery of the abrasive grains and the second protective layer having a thick and stable corrosion resistance are formed.
- FIG. 1 is an enlarged sectional view of a CMP conditioner showing an embodiment of a CMP conditioner of the present invention.
- FIG. 2 is a view showing an aerosol deposition apparatus according to an embodiment of a method for producing a CMP conditioner of the present invention.
- FIG. 1 is a schematic sectional view of a CMP conditioner 10 according to the present invention.
- a base metal 101 a metal bonded phase 102 in contact with the base metal 101, and a large number of abrasive grains 105 such as diamond abrasive grains are fixed by the metal bonded phase 102 to form an abrasive grain layer 11.
- At least the surface of the metal binder phase 102 of the abrasive grain layer 11 is formed as a first protective layer 103 with an oxide film made of silica, titania or the like prepared by a sol-gel method, and the first protective layer 103.
- an alumina film having a thickness of 1 ⁇ m or more produced by an aerosol deposition method is formed as the second protective layer 104.
- the sol-gel method which is a method for forming the first protective layer, will be described below.
- SiO sol-gel solution prepared by mixing Si (OC H) and ethanol or Ti (OC H
- the sol-gel solution includes TiO, A10, SnO, ZnO, VO, V O, MO, WO,
- a sol-gel solution such as TaO or ZnO may be used. Also, instead of ethanol, 2-prop
- aerosols in which fine particles such as brittle materials are dispersed in a gas are sprayed from a nozzle toward the base material, causing the fine particles to collide with a base material such as metal, glass, ceramics, or plastic. It is characterized by causing brittle material fine particles to be deformed or crushed by impact and joining them together to form a structure consisting of the constituent materials of the fine particles on the substrate, especially at room temperature that does not require heating means Thus, a structure can be formed, and a structure having mechanical strength equivalent to that of the fired body can be obtained.
- the apparatus used in this method is basically composed of an aerosol generator that generates aerosol and a nozzle that injects aerosol toward the substrate, and is used to produce a structure with a larger area than the nozzle opening.
- Has position control means that moves and swings the substrate and nozzle relative to each other, and has a chamber and vacuum pump for forming structures when producing under reduced pressure, and generates aerosol. It is common to have a gas generation source for generating the gas.
- the process temperature of the aerosol deposition method is room temperature, which is well below the melting point of the particulate material, that is, several hundred.
- One characteristic is that the structure is formed below C. Therefore, there are various kinds of base materials that can be selected, and there is no problem in application even if it is a low melting point metal or a resin material.
- the fine particles used are mainly brittle materials such as ceramics and semiconductors, and fine particles of the same material can be used alone or in combination, and fine particles of different kinds of brittle materials can be mixed or combined. Can be used. It is also possible to use some metal materials or organic materials mixed with brittle material fine particles or coated on the surface of brittle material fine particles. Even in these cases, the main component of structure formation is brittle materials.
- the brittle material portion of the structure has a smaller crystallite size than that of the raw material fine particles. It is a crystal body, and the crystal may have substantially no crystal orientation. It can be said that there is substantially no grain boundary layer composed of a glass layer at the interface between many brittle material crystals, and a part of the structure. Is characterized in that it often forms an anchor layer that bites into the substrate surface.
- the structure formed by this method is clearly different from a so-called green compact in which fine particles are packed together by pressure and maintained in a form by physical adhesion, and has sufficient strength. ing.
- the brittle material fine particles are crushed and deformed.
- the brittle material fine particles used as a raw material and the crystallite size of the formed brittle material structure are measured by an X-ray diffraction method. Can be judged. That is, the crystallite size of the structure formed by the aerosol deposition method is smaller than the crystallite size of the raw material fine particles.
- Newly formed surfaces in which atoms originally present inside and bonded to other atoms are exposed are formed on the slippage and fracture surfaces that are formed when the fine particles are crushed and deformed. It is considered that the active new surface having a high surface energy is bonded to the adjacent brittle material surface, the new surface of the adjacent brittle material, or the substrate surface to form a structure.
- FIG. 2 shows an aerosol deposition apparatus 20 for forming a second protective film in the CMP diamond conditioner of the present invention.
- a nitrogen gas cylinder 201 is passed through a gas transport pipe 202.
- the aerosol generator 203 is installed on the downstream side of the nozzle 206 having an inlet opening with a diameter of 2 mm and an outlet opening lOmm X O. It is connected.
- the aerosol generator 203 is filled with, for example, aluminum oxide fine particle powder.
- a film-formed object 208 held by a ⁇ stage 207 is arranged!
- the ceramic film forming chamber 205 is connected to a vacuum pump 209! /.
- the operation of the aerosol deposition apparatus 20 for forming a ceramic film will be described below.
- the nitrogen gas cylinder 201 is opened, and the gas is fed into the aerosol generator 203 through the gas transfer pipe 202.
- the aerosol generator 203 is operated to generate an aerosol in which aluminum oxide fine particles and nitrogen gas are mixed in an appropriate ratio.
- the vacuum pump 209 is operated to generate a differential pressure between the aerosol generator 203 and the structure forming chamber 205.
- the aerosol rides on this differential pressure, is introduced into the aerosol transport pipe 204 on the downstream side, accelerates, and is sprayed from the nozzle 206 toward the base material 208.
- the substrate 208 is freely swung by the ⁇ stage 207, and while changing the aerosol collision position, a film-like alumina film is formed on the desired position of the workpiece 208 by collision of fine particles! /,
- the vacuum pump 209 is operated to generate a differential pressure between the aerosol generator 203 and the structure forming chamber 205.
- the force of placing the ceramic film forming chamber 205 in a reduced pressure environment by the vacuum pump 209 is not necessarily required to be in a reduced pressure environment, and the film can be formed under atmospheric pressure.
- the gas is not limited to nitrogen, but helium, compressed air, etc. can be used.
- CMP conditioner which is effective in the present invention, it is immersed in a mixed solution of CMP slurry (W2000, manufactured by Cabot) and 3% hydrogen peroxide solution at 50 ° C for 48 hours.
- a corrosion resistance test was conducted by observing the front and back surface conditions.
- an Si thin film is used as a CMP conditioner on a surface where diamond abrasive grains as abrasive grains are fixed in Ni as a metal binder phase.
- a sol-gel solution prepared by mixing the forming material (Mitsubishi Materials Co., Ltd.) and ethanol 1: 1, dried at 200 ° C for 2 hours, treated at 500 ° C for 8 hours to form a silica film.
- an aerosol is generated at a flow rate of 7 L / min of nitrogen gas using alumina fine particles with an average particle diameter of 0.
- Example 1 For comparison of corrosion resistance, a CMP conditioner in which only the second protective film in Example 1 was formed was fabricated, and the same corrosion resistance test as in Example 1 was performed. As a result of the corrosion resistance test, it was found that discoloration due to corrosion was observed in the vicinity of the diamond abrasive grains, and Ni was eluted.
- Example 1 For comparison of corrosion resistance, a CMP conditioner that did not form the first protective film and the second protective film in Example 1 was produced, and the same corrosion resistance test as in Example 1 was performed. As a result of the corrosion resistance test, it was found that the entire surface where the diamond abrasive grains exist discolored and Ni was eluted.
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- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
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- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
明 細 書 Specification
技術分野 Technical field
[0001] 本発明は、半導体ウェハ等の研磨を行う CMP (化学機械的研磨)装置の研磨パッ ドのコンディショニングに用いられる CMPコンディショナおよびその製造方法に関す TECHNICAL FIELD [0001] The present invention relates to a CMP conditioner used for conditioning a polishing pad of a CMP (Chemical Mechanical Polishing) apparatus for polishing a semiconductor wafer or the like, and a method for manufacturing the same.
背景技術 Background art
[0002] この種の CMPコンディショナとしては、例えば特許文献 1に、円盤状の基体(台金) の上面に円柱状の突起部が間隔をあけて複数形成され、これらの突起部の表面に 複数のダイヤモンド等の砥粒が金属めつき結合相によって固着されたものが提案さ れている。 [0002] As this type of CMP conditioner, for example, Patent Document 1 discloses that a plurality of cylindrical protrusions are formed on the upper surface of a disk-shaped substrate (base metal) at intervals, and the surface of these protrusions is formed. Proposals have been made in which a plurality of abrasive grains such as diamond are fixed by a metal-bonded binder phase.
[0003] また、特許文献 2には、ダイヤモンド砥粒をろう付けしたものが提案されており、さら に特許文献 3には、このように砥粒を固着した金属結合相の表面に SiC等のセラミツ タス被膜を、 CVDやイオンプレーティング等の気相コーティング技術によって被覆す ること力提案されている。 [0003] In addition, Patent Document 2 proposes brazing diamond abrasive grains, and Patent Document 3 further discloses that SiC or the like is formed on the surface of the metal binder phase to which the abrasive grains are fixed. It has been proposed to apply ceramic coatings by vapor phase coating techniques such as CVD and ion plating.
[0004] このような CMPコンディショナにより研磨パッドがコンディショニングされる CMP装 置では、半導体ウェハ等の研磨の際に酸性やアルカリ性の腐食性の高いスラリーが 用いられるため、砥粒を保持する金属結合層がこのスラリーによって腐食 (溶出)して しまって砥粒が脱落し、この脱落した砥粒によって半導体ウェハが傷つけられてスク ラッチが生じるという問題がある。特に、砥粒がダイヤモンドであって結合相がニッケ ル等の金属めつき相である場合、砥粒への金属めつきの濡れ性が乏しいことから両 者の境界部(キヤビティ)には極小ではあるものの隙間が生じ、この隙間力もスラリー が入り込んで金属めつき相を腐食させる結果、砥粒の脱落が一層促進されてしまうこ とになる。 [0004] In a CMP apparatus in which a polishing pad is conditioned by such a CMP conditioner, a highly acidic or alkaline corrosive slurry is used when polishing a semiconductor wafer or the like, so that a metal bond that holds abrasive grains is used. There is a problem that the layer is corroded (eluted) by the slurry and the abrasive grains fall off, and the semiconductor grains are damaged by the dropped abrasive grains to cause scratches. In particular, when the abrasive grains are diamond and the binder phase is a metal-plated phase such as nickel, the wettability of the metal cling to the abrasive grains is poor, so the boundary between the two is minimal. As a result, a gap is generated, and this gap force also enters the slurry and corrodes the metal adhesion phase. As a result, the removal of the abrasive grains is further promoted.
[0005] この点、特許文献 3に記載のように金属結合相表面にセラミックス被膜を被覆した C MPコンディショナでは、このセラミックス被膜によって金属結合層が保護されることに よりその腐食が防止され、従って砥粒の脱落も制御することができる。ところ力 その 一方で、この特許文献 3に記載のような気相コーティング技術によってセラミックス被 膜を被覆した場合には、金属結合相から突出したダイヤモンド等の砥粒の表面にも 被膜が被覆されてしまうため、砥粒の切れ味が損なわれ、パッドの研磨レートが著しく 低下してしまうという問題が生じる。 [0005] In this regard, in a CMP conditioner in which a metal coating phase surface is coated with a ceramic coating as described in Patent Document 3, the ceramic coating protects the metal bonding layer, thereby preventing corrosion. Therefore, the falling off of the abrasive grains can be controlled. Where power On the other hand, when the ceramic film is coated by the vapor phase coating technique as described in Patent Document 3, the film is also coated on the surface of abrasive grains such as diamond protruding from the metal binder phase. The problem is that the sharpness of the abrasive grains is impaired and the polishing rate of the pad is significantly reduced.
[0006] また、様々な基材上にセラミック厚膜を形成させる手法として、特許文献 4〜7など に開示されるエアロゾルデポジション法が知られている。 [0006] Further, as a technique for forming a ceramic thick film on various substrates, an aerosol deposition method disclosed in Patent Documents 4 to 7 and the like is known.
[0007] 特許文献 1:特開 2001— 71269号公報 [0007] Patent Document 1: Japanese Patent Laid-Open No. 2001-71269
特許文献 2:特開 2002— 273657号公報 Patent Document 2: Japanese Patent Laid-Open No. 2002-273657
特許文献 3 :特開 2001— 210613号公報 Patent Document 3: Japanese Patent Laid-Open No. 2001-210613
特許文献 4:特許 3348154号公報 Patent Document 4: Japanese Patent No. 3348154
特許文献 5:特開 2002— 309383号公報 Patent Document 5: Japanese Patent Application Laid-Open No. 2002-309383
特許文献 6:特開 2003— 034003号公報 Patent Document 6: Japanese Unexamined Patent Publication No. 2003-034003
特許文献 7:特開 2004— 091614号公報 Patent Document 7: Japanese Unexamined Patent Application Publication No. 2004-091614
特許文献 8 :特開 2003— 183848号公報 Patent Document 8: Japanese Unexamined Patent Publication No. 2003-183848
発明の開示 Disclosure of the invention
発明が解決しょうとする課題 Problems to be solved by the invention
[0008] 本発明は、このような背景の下になされたもので、 CMP装置に用いられる腐食性の 高いスラリーに対しても砥粒の脱落を確実に防いでスクラッチの発生を抑制すること が可能な CMPコンデイショナを提供することを目的として!/、る。 [0008] The present invention has been made under such a background, and it is possible to reliably prevent the abrasive grains from dropping even in a highly corrosive slurry used in a CMP apparatus and to suppress the generation of scratches. The purpose is to provide a possible CMP conditioner!
課題を解決するための手段 Means for solving the problem
[0009] 上記課題を解決すべく本発明に力、かる CMPコンディショナは、砥石基体の一面に 、砥粒が金属結合相中に固着されてなる砥粒層が形成されており、少なくとも前記砥 粒層の前記金属結合相表面にはゾルゲル法で作製した酸化物膜が第一の保護層と して形成され、前記第一の保護層の表面には、多結晶であり、前記結晶同士の界面 にはガラス層からなる粒界層が実質的に存在しない酸化物厚膜が第二の保護層とし て形成された構成とした。 [0009] In order to solve the above-mentioned problems, the CMP conditioner has the abrasive layer formed by adhering abrasive grains in the metal binder phase on one surface of the grindstone base, and at least the abrasive conditioner described above. An oxide film prepared by a sol-gel method is formed as a first protective layer on the surface of the metal binder phase of the grain layer, and the surface of the first protective layer is polycrystalline, A thick oxide film substantially free of a grain boundary layer composed of a glass layer was formed as a second protective layer at the interface.
[0010] ここで、厚膜とは 1 β m以上の膜厚を有する膜とする。 Here, the thick film is a film having a thickness of 1 β m or more.
前記第一の保護層は少なくとも前記砥粒と前記金属結合相との接合部近傍におい て、前記金属結合相を被覆するように形成されてレ、ること力 S望ましレ、。 The first protective layer is at least near the joint between the abrasive grains and the metal binder phase. The power is formed so as to cover the metal binder phase.
このような構造は第一の保護層である酸化物膜をゾルゲル法によって形成すること で可能となる。ゾルゲル法は溶液を利用した酸化物膜の形成方法であるため、溶液 が表面張力により砥粒の周囲に引き付けられ、その結果、砥粒周辺部でその他の部 分に比べ膜厚が厚くなることが考えられる。形成された酸化物膜は前記金属結合相 を被覆しており、特に砥粒周辺部において、優れた耐食性を有する。 Such a structure is made possible by forming an oxide film as a first protective layer by a sol-gel method. Since the sol-gel method is a method of forming an oxide film using a solution, the solution is attracted to the periphery of the abrasive grains by surface tension, and as a result, the film thickness at the periphery of the abrasive grains is thicker than other parts. Can be considered. The formed oxide film covers the metal binder phase, and has excellent corrosion resistance particularly in the periphery of the abrasive grains.
[0011] 第一の保護層は砥粒周辺部を除くその他の部分では膜厚が薄くなり、安定した耐 食性が得られない。そこで、第一の保護層の表面に、第二の保護層である、多結晶 であり、前記結晶同士の界面にはガラス層からなる粒界層が実質的に存在しない酸 化物厚膜を形成することで、安定した耐食性が得ることができる。 [0011] The first protective layer has a thin film thickness in other portions except the peripheral portion of the abrasive grains, and stable corrosion resistance cannot be obtained. Therefore, a thick oxide film is formed on the surface of the first protective layer, which is a second protective layer, which is polycrystalline, and a grain boundary layer composed of a glass layer does not substantially exist at the interface between the crystals. By doing so, stable corrosion resistance can be obtained.
[0012] 第二の保護層は砥粒の表面には形成されず、第一の保護層の表面のみに形成さ れることが望ましい。砥粒の表面には形成されないことで、 CMPコンデイショナの研 削性能が変化するなどの不具合を起こさない。 [0012] The second protective layer is preferably not formed on the surface of the abrasive grains, but only on the surface of the first protective layer. Since it is not formed on the surface of the abrasive grains, it does not cause problems such as changes in the polishing performance of the CMP conditioner.
[0013] また、第二の保護層は耐食性に優れた酸化物、例えばアルミナであることが望まし い。 [0013] The second protective layer is desirably an oxide having excellent corrosion resistance, such as alumina.
また、第二の保護層の製造方法としては、脆性材料の微粒子をガス中に分散させ たエアロゾルを第一の保護層上に噴射して衝突させ酸化物厚膜を形成させる方法が 考えられる。 As a method for producing the second protective layer, a method in which an aerosol in which fine particles of a brittle material are dispersed in a gas is jetted onto the first protective layer to collide to form a thick oxide film.
[0014] 上記方法は前記した特許文献 4〜7にも記載されるように、エアロゾルデポジション 法として認知された方法である。 [0014] The above method is a method recognized as an aerosol deposition method, as described in Patent Documents 4 to 7.
エアロゾルデポジション法は、様々な基材上にセラミック厚膜を形成させる手法であ り、セラミック微粒子をガス中に分散させたエアロゾルをノズルから基材に向けて噴射 し、金属やガラス、セラミックスやプラスチックなどの基材に微粒子を衝突させ、この衝 突の衝撃により微粒子を変形や破砕を起させしめてこれらを接合させ、基材上に微 粒子の構成材料からなる膜構造物をダイレクトで形成させることを特徴としており、特 に加熱手段を必要としない常温で構造物が形成可能であり、焼成体同等の機械的 強度を保有する構造物を得ることができる。この方法に用いられる装置は、基本的に エアロゾルを発生させるエアロゾル発生器と、エアロゾルを基材に向けて噴射するノ ズルとからなり、ノズルの開口よりも大きな面積で構造物を作製する場合には、基材と ノズルを相対的に移動 '揺動させる位置制御手段を有し、減圧下で作製を行う場合 には構造物を形成させるチャンバ一と真空ポンプを有し、またエアロゾルを発生させ るためのガス発生源を有することが一般的である。 The aerosol deposition method is a technique for forming a thick ceramic film on various substrates. The aerosol, in which ceramic fine particles are dispersed in a gas, is sprayed from a nozzle toward the substrate, and metal, glass, ceramics, Fine particles collide with a base material such as plastic, and the impact of the impact causes the fine particles to be deformed or crushed and joined together to directly form a membrane structure composed of the constituent materials of the fine particles on the base material. In particular, a structure can be formed at room temperature that does not require a heating means, and a structure having mechanical strength equivalent to that of a fired body can be obtained. The apparatus used in this method basically includes an aerosol generator for generating an aerosol and a nozzle for injecting the aerosol toward a substrate. When manufacturing a structure with a larger area than the nozzle opening, it has a position control means that moves and swings the base material and the nozzle relative to each other. It is common to have a chamber for forming the structure and a vacuum pump, and a gas generation source for generating aerosol.
[0015] エアロゾルデポジション法のプロセス温度は常温であり、微粒子材料の融点より十 分に低い温度、すなわち数百。 C以下で構造物形成が行われるところにひとつの特徴 力 sある。 [0015] The process temperature of the aerosol deposition method is room temperature, a temperature sufficiently lower than the melting point of the fine particle material, that is, several hundred. There is one characteristic power s where structures are formed below C.
[0016] また使用される微粒子はセラミックスなどの脆性材料を主体とし、同一材質の微粒 子を単独であるいは混合させて用いることができるほか、異種の微粒子を混合させた り、複合させて用いることが可能である。また一部金属材料や有機物材料などをセラ ミック微粒子に混合させたり、セラミック微粒子表面にコーティングさせて用いることも 可能である。これらの場合でも構造物形成の主となるものはセラミックスである。 [0016] Further, the fine particles used are mainly brittle materials such as ceramics, fine particles of the same material can be used alone or in combination, and different types of fine particles can be mixed or combined. Is possible. It is also possible to use some metal materials or organic materials mixed with ceramic fine particles, or coated on the surface of ceramic fine particles. Even in these cases, the main component of the structure formation is ceramics.
[0017] この手法によって形成される膜構造物において、結晶性の微粒子を原料として用 いる場合、膜構造物は、その結晶子サイズが原料微粒子のそれに比べて小さい多結 晶体であり、その結晶は実質的に結晶配向性がない場合が多ぐセラミック結晶同士 の界面にはガラス層からなる粒界層が実質的に存在しないと言え、さらに膜構造物 の一部は基材表面に食!/、込むアンカー層を形成することが多!/、とレ、う特徴がある。 In the film structure formed by this method, when crystalline fine particles are used as a raw material, the film structure is a polycrystal having a crystallite size smaller than that of the raw material fine particles. It can be said that there is substantially no crystal orientation, and there is substantially no grain boundary layer composed of a glass layer at the interface between ceramic crystals, and part of the film structure is eaten on the substrate surface! /, Many anchor layers are formed!
[0018] この方法により形成される膜構造物は、微粒子同士が圧力によりパッキングされ、 物理的な付着で形態を保っている状態のいわゆる圧粉体とは明らかに異なり、十分 な強度を保有している。 [0018] The membrane structure formed by this method clearly has a sufficient strength, unlike a so-called green compact in which fine particles are packed together by pressure and keeps its form by physical adhesion. ing.
[0019] この膜構造物形成において、微粒子が破砕 ·変形を起していることは、原料として 用いる微粒子および形成された膜構造物の結晶子サイズを X線回折法で測定するこ とにより判断できる。 [0019] In the formation of the membrane structure, the fact that the fine particles are crushed and deformed is determined by measuring the fine particles used as a raw material and the crystallite size of the formed film structure by an X-ray diffraction method. it can.
[0020] エアロゾルデポジション法に関係する語句を以下に説明する。 [0020] Terms related to the aerosol deposition method will be described below.
(多結晶) (Polycrystalline)
本件では結晶子が接合'集積してなる構造体を指す。結晶子は実質的にそれひと つで結晶を構成しその径は通常 5nm以上である。ただし、微粒子が破砕されずに構 造物中に取り込まれるなどの場合がまれに生じる力 S、実質的には多結晶である。 (微粒子) In this case, it refers to a structure in which crystallites are joined and accumulated. The crystallites substantially form a single crystal, and the diameter is usually 5 nm or more. However, the force S that rarely occurs when fine particles are incorporated into the structure without being crushed, is essentially polycrystalline. (Fine particles)
一次粒子が緻密質粒子である場合は、粒度分布測定や走査型電子顕微鏡で同定 される平均粒径が 10 m以下であるものを言う。また一次粒子が衝撃によって破砕し やすい多孔質粒子である場合は、平均粒径が 50 m以下であるものを言う。 When the primary particles are dense particles, the average particle size identified by particle size distribution measurement or scanning electron microscope is 10 m or less. When the primary particles are porous particles that are easily crushed by impact, the average particle size is 50 m or less.
(エアロゾル) (Aerosol)
ヘリウム、窒素、アルゴン、酸素、乾燥空気、これらの混合ガスなどのガス中に前述 の微粒子を分散させたものであり、一次粒子が分散している状態が望ましいが、通常 はこの一次粒子が凝集した凝集粒を含む。エアロゾルのガス圧力と温度は任意であ る力 ガス中の微粒子の濃度は、ガス圧を 1気圧、温度を 20°Cと換算した場合に、ノ ズルから噴射される時点において 0.0003mL/L〜5mL/Lの範囲内であることが 構造物の形成にとって望まし!/、。 The aforementioned fine particles are dispersed in a gas such as helium, nitrogen, argon, oxygen, dry air, or a mixed gas thereof, and it is desirable that the primary particles are dispersed. Containing aggregated grains. The gas pressure and temperature of the aerosol are arbitrary. The concentration of fine particles in the gas is 0.0003mL / L at the time of injection from the nozzle when the gas pressure is converted to 1 atm and the temperature is converted to 20 ° C. Desirable for structure formation to be in the range of 5 mL / L! /.
(界面) (Interface)
本件では結晶子同士の境界を構成する領域を指す。 In this case, it refers to the region that forms the boundary between crystallites.
(粒界層) (Grain boundary layer)
界面あるいは焼結体で!/、う粒界に位置する厚み(通常数 nm〜数 μ m)を持つ層で 、通常結晶粒内の結晶構造とは異なるアモルファス構造をとり、また場合によっては 不純物の偏析を伴う。 At the interface or sintered body! /, A layer with a thickness (usually several nm to several μm) located at the grain boundary, which usually has an amorphous structure different from the crystal structure in the crystal grain, and in some cases impurities Accompanied by segregation.
発明の効果 The invention's effect
[0021] 本発明による CMPコンディショナでは、砥粒周辺部において優れた耐食性を有す る第一の保護層と、膜厚が厚く安定した耐食性を有する第二の保護層の両方を形成 することにより、金属結合相の腐食による砥粒の脱落を防ぐ事が可能となり、スクラッ チの発生を抑えて高品位の半導体ウェハ等の研磨を図る事ができる。 [0021] In the CMP conditioner according to the present invention, both the first protective layer having excellent corrosion resistance in the periphery of the abrasive grains and the second protective layer having a thick and stable corrosion resistance are formed. As a result, it is possible to prevent the abrasive grains from falling off due to the corrosion of the metal binder phase, and it is possible to polish high-quality semiconductor wafers and the like while suppressing the occurrence of scratches.
図面の簡単な説明 Brief Description of Drawings
[0022] [図 1]本発明の CMPコンデイショナの実施形態を示す、 CMPコンデイショナの拡大 断面図である。 FIG. 1 is an enlarged sectional view of a CMP conditioner showing an embodiment of a CMP conditioner of the present invention.
[図 2]本発明の CMPコンデイショナの製造方法の一実施形態に係わるエアロゾルデ ポジション装置を示す図である。 FIG. 2 is a view showing an aerosol deposition apparatus according to an embodiment of a method for producing a CMP conditioner of the present invention.
発明を実施するための最良の形態 [0023] 図 1は、本発明に係る CMPコンディショナ 10の断面模式図である。 CMPコンディ ショナは、台金 101と台金 101に接する金属結合相 102と、金属結合相 102によって 例えばダイヤ砥粒等の多数の砥粒 105が固着されて砥粒層 11を形成されており、少 なくとも前記砥粒層 11の前記金属結合相 102表面は、ゾルゲル法で作製したシリカ 、チタニア等の酸化物膜が第一の保護層 103として形成されており、前記第一の保 護層表面は、エアロゾルデポジション法により作製した膜厚 1 μ m以上のアルミナ膜 が第二の保護層 104として形成されている。 BEST MODE FOR CARRYING OUT THE INVENTION FIG. 1 is a schematic sectional view of a CMP conditioner 10 according to the present invention. In the CMP conditioner, a base metal 101, a metal bonded phase 102 in contact with the base metal 101, and a large number of abrasive grains 105 such as diamond abrasive grains are fixed by the metal bonded phase 102 to form an abrasive grain layer 11. At least the surface of the metal binder phase 102 of the abrasive grain layer 11 is formed as a first protective layer 103 with an oxide film made of silica, titania or the like prepared by a sol-gel method, and the first protective layer 103. On the surface, an alumina film having a thickness of 1 μm or more produced by an aerosol deposition method is formed as the second protective layer 104.
[0024] 第一の保護層を形成する手法である、ゾルゲル法につ!/、て、以下に説明する。 The sol-gel method, which is a method for forming the first protective layer, will be described below.
Si (OC H ) とエタノールを混合させて作製した SiOゾルゲル液または Ti (OC H SiO sol-gel solution prepared by mixing Si (OC H) and ethanol or Ti (OC H
2 5 4 2 2 5 2 5 4 2 2 5
) とエタノールを混合させて作製した TiOゾルゲル液にコンデイショナを 1分間浸漬) And ethanol are mixed in a TiO sol-gel solution prepared for 1 minute.
4 2 4 2
した後、 200°Cで 2h乾燥させ、その後 500°Cで 8時間処理し酸化物膜を形成する。 なお、ゾルゲル液としては、 TiO 、 A1 0 、 SnO、 ZnO、 VO 、 V O 、 MO 、 WO 、 Then, it is dried at 200 ° C for 2 hours, and then treated at 500 ° C for 8 hours to form an oxide film. The sol-gel solution includes TiO, A10, SnO, ZnO, VO, V O, MO, WO,
2 2 3 2 2 2 5 3 3 2 2 3 2 2 2 5 3 3
TaO 、 ZnOなどのゾルゲル液を用いても良い。また、エタノールの代りに 2—プロパA sol-gel solution such as TaO or ZnO may be used. Also, instead of ethanol, 2-prop
5 2 5 2
ノールを用いても良い。 Nord may be used.
[0025] 続いて、第二の保護層 104を形成する手法である、エアロゾルデポジション法につ いて、以下に説明する。 [0025] Next, an aerosol deposition method, which is a method for forming the second protective layer 104, will be described below.
エアロゾルデポジション法は脆性材料などの微粒子をガス中に分散させたエアロゾ ルをノズルから基材に向けて噴射し、金属やガラス、セラミックスやプラスチックなどの 基材に微粒子を衝突させ、この衝突の衝撃により脆性材料微粒子を変形や破砕を起 させしめてこれらを接合させ、基材上に微粒子の構成材料からなる構造物をダイレク トで形成させることを特徴としており、特に加熱手段を必要としない常温で構造物が 形成可能であり、焼成体同等の機械的強度を保有する構造物を得ることができる。こ の方法に用いられる装置は、基本的にエアロゾルを発生させるエアロゾル発生器と、 エアロゾルを基材に向けて噴射するノズルとからなり、ノズルの開口よりも大きな面積 で構造物を作製する場合には、基材とノズルを相対的に移動 ·揺動させる位置制御 手段を有し、減圧下で作製を行う場合には構造物を形成させるチャンバ一と真空ポ ンプを有し、またエアロゾルを発生させるためのガス発生源を有することが一般的で ある。 エアロゾルデポジション法のプロセス温度は常温であり、微粒子材料の融点より十 分に低い温度、すなわち数百。 C以下で構造物形成が行われるところにひとつの特徴 がある。従って選択できる基材は多種に亘り、低融点金属や樹脂材料であっても適 用に問題がない。 In the aerosol deposition method, aerosols in which fine particles such as brittle materials are dispersed in a gas are sprayed from a nozzle toward the base material, causing the fine particles to collide with a base material such as metal, glass, ceramics, or plastic. It is characterized by causing brittle material fine particles to be deformed or crushed by impact and joining them together to form a structure consisting of the constituent materials of the fine particles on the substrate, especially at room temperature that does not require heating means Thus, a structure can be formed, and a structure having mechanical strength equivalent to that of the fired body can be obtained. The apparatus used in this method is basically composed of an aerosol generator that generates aerosol and a nozzle that injects aerosol toward the substrate, and is used to produce a structure with a larger area than the nozzle opening. Has position control means that moves and swings the substrate and nozzle relative to each other, and has a chamber and vacuum pump for forming structures when producing under reduced pressure, and generates aerosol. It is common to have a gas generation source for generating the gas. The process temperature of the aerosol deposition method is room temperature, which is well below the melting point of the particulate material, that is, several hundred. One characteristic is that the structure is formed below C. Therefore, there are various kinds of base materials that can be selected, and there is no problem in application even if it is a low melting point metal or a resin material.
[0026] また使用される微粒子はセラミックスや半導体などの脆性材料を主体とし、同一材 質の微粒子を単独であるいは混合させて用いることができるほか、異種の脆性材料 微粒子を混合させたり、複合させて用いることが可能である。また一部金属材料や有 機物材料などを脆性材料微粒子に混合させたり、脆性材料微粒子表面にコーティン グさせて用いることも可能である。これらの場合でも構造物形成の主となるものは脆性 材料である。 [0026] Further, the fine particles used are mainly brittle materials such as ceramics and semiconductors, and fine particles of the same material can be used alone or in combination, and fine particles of different kinds of brittle materials can be mixed or combined. Can be used. It is also possible to use some metal materials or organic materials mixed with brittle material fine particles or coated on the surface of brittle material fine particles. Even in these cases, the main component of structure formation is brittle materials.
[0027] この手法によって形成される構造物において、結晶性の脆性材料微粒子を原料と して用いる場合、構造物の脆性材料部分は、その結晶子サイズが原料微粒子のそ れに比べて小さい多結晶体であり、その結晶は実質的に結晶配向性がない場合が 多ぐ脆性材料結晶同士の界面にはガラス層からなる粒界層が実質的に存在しない と言え、さらに構造物の一部は基材表面に食い込むアンカー層を形成することが多 いという特徴がある。 [0027] In the structure formed by this method, when crystalline brittle material fine particles are used as a raw material, the brittle material portion of the structure has a smaller crystallite size than that of the raw material fine particles. It is a crystal body, and the crystal may have substantially no crystal orientation. It can be said that there is substantially no grain boundary layer composed of a glass layer at the interface between many brittle material crystals, and a part of the structure. Is characterized in that it often forms an anchor layer that bites into the substrate surface.
[0028] この方法により形成される構造物は、微粒子同士が圧力によりパッキングされ、物 理的な付着で形態を保っている状態のいわゆる圧粉体とは明らかに異なり、十分な 強度を保有している。 [0028] The structure formed by this method is clearly different from a so-called green compact in which fine particles are packed together by pressure and maintained in a form by physical adhesion, and has sufficient strength. ing.
[0029] この構造物形成において、脆性材料微粒子が破砕 ·変形を起していることは、原料 として用いる脆性材料微粒子および形成された脆性材料構造物の結晶子サイズを X 線回折法で測定することにより判断できる。すなわちエアロゾルデポジション法で形 成される構造物の結晶子サイズは、原料微粒子の結晶子サイズよりも小さレヽ値を示 す。微粒子が破砕や変形をすることで形成されるずれ面や破面には、もともと内部に 存在し別の原子と結合していた原子が剥き出しの状態となった新生面が形成される。 この表面エネルギーが高い活性な新生面が、隣接した脆性材料表面や同じく隣接し た脆性材料の新生面あるいは基板表面と接合することにより構造物が形成されるもの と考えられる。また微粒子の表面に水酸基が程よく存在する場合では、微粒子の衝 突時に微粒子同士や微粒子と構造物との間に生じる局部のずり応力により、メカノケ ミカルな酸塩基脱水反応が起き、これら同士が接合するということも考えられる。外部 からの連続した機械的衝撃力の付加は、これらの現象を継続的に発生させ、微粒子 の変形、破砕などの繰り返しにより接合の進展、緻密化が行われ、脆性材料構造物 が成長するものと考えられる。 [0029] In this structure formation, the brittle material fine particles are crushed and deformed. The brittle material fine particles used as a raw material and the crystallite size of the formed brittle material structure are measured by an X-ray diffraction method. Can be judged. That is, the crystallite size of the structure formed by the aerosol deposition method is smaller than the crystallite size of the raw material fine particles. Newly formed surfaces in which atoms originally present inside and bonded to other atoms are exposed are formed on the slippage and fracture surfaces that are formed when the fine particles are crushed and deformed. It is considered that the active new surface having a high surface energy is bonded to the adjacent brittle material surface, the new surface of the adjacent brittle material, or the substrate surface to form a structure. In addition, when there are moderately hydroxyl groups on the surface of the fine particles, the fine particle impacts. It is also conceivable that a mechanochemical acid-base dehydration reaction occurs due to local shear stress generated between the microparticles or between the microparticles and the structure at the time of a collision, and these are joined together. The addition of continuous mechanical impact force from the outside causes these phenomena to occur continuously, and the progress and densification of joints are performed by repeated deformation and crushing of fine particles, and brittle material structures grow. it is conceivable that.
[0030] 図 2は本発明の CMPダイヤモンドコンディショナのうち、第二の保護膜を形成させ るエアロゾルデポジション装置 20を示したものであり、窒素ガスボンベ 201の先にガ ス搬送管 202を介してエアロゾル発生器 203が設置され、その下流側にエアロゾル 搬送管 204を介してセラミック膜形成室 205内に配置された例えば直径 2mmの導入 開口と lOmm X O. 4mmの導出開口をもつノズノレ 206に接続されている。エアロゾル 発生器 203内には例えば酸化アルミニウム微粒子粉体が充填されている。ノズル 20 6の開口の先には、例えば ΧΥΖ Θステージ 207に保持された被製膜物 208が配置さ れて!/、る。セラミック膜形成室 205は真空ポンプ 209と接続されて!/、る。 FIG. 2 shows an aerosol deposition apparatus 20 for forming a second protective film in the CMP diamond conditioner of the present invention. A nitrogen gas cylinder 201 is passed through a gas transport pipe 202. The aerosol generator 203 is installed on the downstream side of the nozzle 206 having an inlet opening with a diameter of 2 mm and an outlet opening lOmm X O. It is connected. The aerosol generator 203 is filled with, for example, aluminum oxide fine particle powder. At the tip of the opening of the nozzle 206, for example, a film-formed object 208 held by a ΧΥΖΘ stage 207 is arranged! The ceramic film forming chamber 205 is connected to a vacuum pump 209! /.
[0031] 以下にセラミック膜を形成させるエアロゾルデポジション装置 20の作用を述べる。窒 素ガスボンベ 201を開栓し、ガス搬送管 202を通じてガスをエアロゾル発生器 203内 に送り込み、同時にエアロゾル発生器 203を運転させて酸化アルミニウム微粒子と窒 素ガスが適当比で混合されたエアロゾルを発生させる。また真空ポンプ 209を稼動さ せ、エアロゾル発生器 203と構造物形成室 205の間に差圧を生じさせる。エアロゾル はこの差圧に乗って下流側のエアロゾル搬送管 204に導入されて加速し、ノズル 20 6より基材 208に向けて噴射する。基材 208は ΧΥΖ Θステージ 207により自在に揺動 され、エアロゾル衝突位置を変化させつつ、微粒子の衝突により被製膜物 208の所 望位置上に膜状のアルミナ膜が形成されて!/、く。 [0031] The operation of the aerosol deposition apparatus 20 for forming a ceramic film will be described below. The nitrogen gas cylinder 201 is opened, and the gas is fed into the aerosol generator 203 through the gas transfer pipe 202. At the same time, the aerosol generator 203 is operated to generate an aerosol in which aluminum oxide fine particles and nitrogen gas are mixed in an appropriate ratio. Let Further, the vacuum pump 209 is operated to generate a differential pressure between the aerosol generator 203 and the structure forming chamber 205. The aerosol rides on this differential pressure, is introduced into the aerosol transport pipe 204 on the downstream side, accelerates, and is sprayed from the nozzle 206 toward the base material 208. The substrate 208 is freely swung by the ΘΘstage 207, and while changing the aerosol collision position, a film-like alumina film is formed on the desired position of the workpiece 208 by collision of fine particles! /, The
[0032] ここでは真空ポンプ 209にてセラミック膜形成室 205を減圧環境下としている力 必 ずしも減圧環境にする必要はなぐ大気中圧下にて製膜することも可能である。また ガスも窒素に限らず、ヘリウム、圧縮空気などの使用は自在である。 [0032] Here, the force of placing the ceramic film forming chamber 205 in a reduced pressure environment by the vacuum pump 209 is not necessarily required to be in a reduced pressure environment, and the film can be formed under atmospheric pressure. The gas is not limited to nitrogen, but helium, compressed air, etc. can be used.
[0033] (実施例) [0033] (Example)
本発明に力、かる CMPコンデイショナの性能を調べるため、 CMPスラリー(W2000、 Cabot社製)と 3%過酸化水素溶液の混合溶液中に 50°Cで 48h浸漬を行い、浸漬 前後の表面状態観察こよる耐食性試験を行つた。 In order to investigate the performance of the CMP conditioner, which is effective in the present invention, it is immersed in a mixed solution of CMP slurry (W2000, manufactured by Cabot) and 3% hydrogen peroxide solution at 50 ° C for 48 hours. A corrosion resistance test was conducted by observing the front and back surface conditions.
耐食性試験に用いた本発明に力、かる CMPコンディショナとして、砥粒としてのダイ ャ砥粒が金属結合相としての Ni中に固着されている表面に、第一の保護膜として、 S i薄膜形成材(三菱マテリアル社製)とエタノールを 1: 1で混合し作製したゾルゲル液 にコンデイショナを 1分間浸漬した後、 200°Cで 2h乾燥、 500°Cで 8時間処理してシリ 力膜を形成させ、続いて第二の保護膜として図 2に準じる装置にて、平均粒径 0. & μ mのアルミナ微粒子を用いて、窒素ガス 7L/minの流量でエアロゾルを発生させ、ノ ズノレより被製膜物表面に噴射させて、膜厚 3〜5 mアルミナ膜を形成した CMPコン ディショナを作製した。耐食性試験の結果、腐食による変色は無ぐ十分な耐食性を 有していることがわかった。結果について表 1に示す。また表 1では以下に示す比較 例 1、比較例 2の結果も合わせて表記した。 As an excellent CMP conditioner used in the corrosion resistance test, as a first protective film, an Si thin film is used as a CMP conditioner on a surface where diamond abrasive grains as abrasive grains are fixed in Ni as a metal binder phase. After immersing the conditioner in a sol-gel solution prepared by mixing the forming material (Mitsubishi Materials Co., Ltd.) and ethanol 1: 1, dried at 200 ° C for 2 hours, treated at 500 ° C for 8 hours to form a silica film. Next, as a second protective film, an aerosol is generated at a flow rate of 7 L / min of nitrogen gas using alumina fine particles with an average particle diameter of 0. A CMP conditioner with a 3 to 5 m thick alumina film was produced by spraying onto the surface of the film. As a result of the corrosion resistance test, it was found that there was no discoloration due to corrosion and sufficient corrosion resistance. The results are shown in Table 1. In Table 1, the results of Comparative Examples 1 and 2 shown below are also shown.
[0034] (比較例 1) [0034] (Comparative Example 1)
耐食性の比較のため、実施例 1における第二の保護膜のみを形成した CMPコンデ イショナを作製し、実施例 1と同様の耐食性試験を行った。耐食性試験の結果、ダイ ャ砥粒近傍にお!/、て腐食による変色が見られ、 Niが溶出してレ、ることがわかった。 For comparison of corrosion resistance, a CMP conditioner in which only the second protective film in Example 1 was formed was fabricated, and the same corrosion resistance test as in Example 1 was performed. As a result of the corrosion resistance test, it was found that discoloration due to corrosion was observed in the vicinity of the diamond abrasive grains, and Ni was eluted.
[0035] (比較例 2) [0035] (Comparative Example 2)
耐食性の比較のため、実施例 1における第一の保護膜、および第二の保護膜を形 成しない CMPコンデイショナを作製し、実施例 1と同様の耐食性試験を行った。耐食 性試験の結果、ダイヤ砥粒が存在する面の全域で変色し、 Niが溶出していることが わかった。 For comparison of corrosion resistance, a CMP conditioner that did not form the first protective film and the second protective film in Example 1 was produced, and the same corrosion resistance test as in Example 1 was performed. As a result of the corrosion resistance test, it was found that the entire surface where the diamond abrasive grains exist discolored and Ni was eluted.
[0036] [表 1] 実施例 1 比較例 1 比較例 2 [Table 1] Example 1 Comparative Example 1 Comparative Example 2
第一の保護膜 あり なし なし First protective film Yes No No
第二の保護腠 あり あり なし Second protection rod Yes Yes No
0 Δ X 0 Δ X
腐食による ダイャ砥粒 全域で Corrosion due to corrosion
耐食性試験後概観 変色無し 近傍.において 腐食による変色 Overview after corrosion resistance test No discoloration In the vicinity, discoloration due to corrosion
腐食による変色 Discoloration due to corrosion
Claims
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/311,226 US20090239454A1 (en) | 2006-09-25 | 2007-09-21 | Cmp conditioner and process for producing the same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006-258894 | 2006-09-25 | ||
| JP2006258894A JP4854445B2 (en) | 2006-09-25 | 2006-09-25 | CMP conditioner and method of manufacturing the same |
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| WO2008038583A1 true WO2008038583A1 (en) | 2008-04-03 |
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| PCT/JP2007/068356 Ceased WO2008038583A1 (en) | 2006-09-25 | 2007-09-21 | Cmp conditioner and process for producing the same |
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| Country | Link |
|---|---|
| US (1) | US20090239454A1 (en) |
| JP (1) | JP4854445B2 (en) |
| KR (1) | KR20090074741A (en) |
| CN (1) | CN101547770A (en) |
| TW (1) | TW200902234A (en) |
| WO (1) | WO2008038583A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US8096859B2 (en) * | 2008-12-18 | 2012-01-17 | Sunnen Products Company | Honing tool having enhanced wear resistance properties |
| US8512098B1 (en) * | 2010-09-28 | 2013-08-20 | Jeffrey Bonner | Machining technique using a plated superabrasive grinding wheel on a swiss style screw machine |
| TWI422466B (en) * | 2011-01-28 | 2014-01-11 | Advanced Surface Tech Inc | Diamond abrasive tool and manufacturing method thereof |
| CN203390712U (en) * | 2013-04-08 | 2014-01-15 | 宋健民 | Chemical mechanical polishing dresser |
| JP5681826B1 (en) * | 2014-06-16 | 2015-03-11 | 嘉五郎 小倉 | Shaft core measuring device |
| JP6453666B2 (en) * | 2015-02-20 | 2019-01-16 | 東芝メモリ株式会社 | Manufacturing method of polishing pad dresser |
| CN108237467B (en) * | 2016-12-23 | 2020-10-02 | 中芯国际集成电路制造(上海)有限公司 | Method for processing grinding pad |
| TWI636854B (en) * | 2017-06-12 | 2018-10-01 | 中國砂輪企業股份有限公司 | Grinding tool and method of fabricating the same |
| KR102013386B1 (en) * | 2018-01-29 | 2019-08-22 | 새솔다이아몬드공업 주식회사 | Manufacturing method of pad conditioner by reverse plating and pad conditioner thereof |
| CN110634776B (en) * | 2019-09-18 | 2022-03-01 | 西安奕斯伟材料科技有限公司 | Preparation device and preparation method of silicon wafer sample |
| CN110782779B (en) * | 2019-11-01 | 2022-05-13 | Oppo广东移动通信有限公司 | Glass piece and surface polishing method, glass case and electronic device |
| TWI806466B (en) * | 2022-03-03 | 2023-06-21 | 中國砂輪企業股份有限公司 | Pad conditioner and manufacturing method thereof |
| TWI823456B (en) * | 2022-07-01 | 2023-11-21 | 詠巨科技有限公司 | Conditioning assembly, manufacturing method thereof, and assembled conditioner using the same |
| TWI889633B (en) * | 2025-01-23 | 2025-07-01 | 日鐵精工股份有限公司 | Diamond conditioner manufacturing equipment and diamond conditioner manufacturing method |
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| JP2007260886A (en) * | 2006-03-30 | 2007-10-11 | Mitsubishi Materials Corp | CMP conditioner and method of manufacturing the same |
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-
2007
- 2007-09-21 WO PCT/JP2007/068356 patent/WO2008038583A1/en not_active Ceased
- 2007-09-21 KR KR1020097005986A patent/KR20090074741A/en not_active Withdrawn
- 2007-09-21 CN CNA2007800355219A patent/CN101547770A/en active Pending
- 2007-09-21 TW TW096135548A patent/TW200902234A/en not_active IP Right Cessation
- 2007-09-21 US US12/311,226 patent/US20090239454A1/en not_active Abandoned
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| JPH1058306A (en) * | 1996-08-09 | 1998-03-03 | Mitsubishi Materials Corp | Polishing cloth dressing apparatus and polishing cloth dressing whetstone |
| JP2001210613A (en) * | 2000-01-27 | 2001-08-03 | Allied Material Corp | Pad conditioner for CMP |
| JP2003309094A (en) * | 2002-04-15 | 2003-10-31 | Noritake Super Abrasive:Kk | Dresser for processing cmp |
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| US20090239454A1 (en) | 2009-09-24 |
| CN101547770A (en) | 2009-09-30 |
| TW200902234A (en) | 2009-01-16 |
| JP4854445B2 (en) | 2012-01-18 |
| JP2008073825A (en) | 2008-04-03 |
| TWI335854B (en) | 2011-01-11 |
| KR20090074741A (en) | 2009-07-07 |
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