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WO2008019851A1 - Élément de mémoire mram et procédé permettant de mettre en mémoire une information dans une cellule mram - Google Patents

Élément de mémoire mram et procédé permettant de mettre en mémoire une information dans une cellule mram Download PDF

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Publication number
WO2008019851A1
WO2008019851A1 PCT/EP2007/007239 EP2007007239W WO2008019851A1 WO 2008019851 A1 WO2008019851 A1 WO 2008019851A1 EP 2007007239 W EP2007007239 W EP 2007007239W WO 2008019851 A1 WO2008019851 A1 WO 2008019851A1
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WO
WIPO (PCT)
Prior art keywords
mram
control line
switching
control
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2007/007239
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German (de)
English (en)
Inventor
Michael Huth
Fabrizio Porrati
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Goethe Universitaet Frankfurt am Main
Original Assignee
Goethe Universitaet Frankfurt am Main
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Publication of WO2008019851A1 publication Critical patent/WO2008019851A1/fr
Anticipated expiration legal-status Critical
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect

Definitions

  • MRAM memory element and method for storing information in an MRAM cell
  • the invention relates to an MRAM memory element having a plurality of first control lines guided on a substrate, which form a line matrix with a plurality of second control lines likewise routed on the substrate, in each case one of these in the intersection areas between a respective first control line and a second control line MRAM cell is arranged, each MRAM ZeIIe each comprising a multi-layer packet having at least one magnetic reference layer and an anisotropic axis having a switchable magnetic layer. It further relates to a method for storing information in an MRAM cell of such an M RAM memory element.
  • Magnetic random access memory may provide the basis for a non-volatile random access memory technology that uses the Dynamic Random Access Memory (DRAM) currently used as the standard in computer systems.
  • DRAM Dynamic Random Access Memory
  • Memory technology or other common types of memory such as SRAMS (static, ie non-volatile RAMs), FRAMs (ferroelectric RAMs) or even flash memory, such as MRAM elements or MRAM memory technology.
  • SRAMS static, ie non-volatile RAMs
  • FRAMs ferrroelectric RAMs
  • flash memory such as MRAM elements or MRAM memory technology.
  • These multilayer systems may comprise, for example, a plurality of ferromagnetic layers, which are suitably separated from one another by non-magnetic layers the kind of a magnetic tunnel elWallets be arranged to each other.
  • Digital information may be stored in such storage elements in the form of the relative position of the magnetization of two adjacent ferromagnetic layers to each other, for example, the logical state "0" of an antiparallel position and the logic state "1" correspond to a parallel position of the magnetization vectors in the magnetic layers can.
  • Such memory cells can, for example, in the so-called tunnel contact construction or in the so-called Giant magnetoresisance design be executed.
  • the electrical resistance of the layer system changes in current flow perpendicularly through the layer sequence in dependence on the relative position of the magnetization of the adjacent ferromagnetic layers to each other.
  • the sheet resistance of the layer system changes depending on the relative position of the magnetizations of the adjacent ferromagnetic layers. Reading out the information stored in such an MRAM cell information can thus take place via an electrical resistance measurement.
  • TMR elements Tunnelnel Magneto Resistance
  • GMR elements Gate Magneto Resistance
  • the distance layer between the magnetic layers is conductive. The current can flow perpendicular or parallel to the sequence of layers.
  • the resistance values for the n 0 "configuration may differ by a few percent to a few 100%.
  • the multilayer package usually comprises at least one magnetic reference layer whose magnetization is fixed in a predetermined direction by suitable interaction, for example due to crystallographic properties or due to topographic constraints on the substrate.
  • This reference layer is also referred to as a "pinned layer.”
  • the multi-layer packet of the MRAM cell is usually at the intersection between two printed conductors on a substrate, namely on the one hand a bitline designated first control line and on the other hand also referred to as a wordline second control line between them arranged.
  • both control lines can also be located together above or below the multilayer package, whereby they must of course be suitably electrically isolated from each other.
  • a plurality of such cells in MRAM memory elements are formed in a line matrix formed by the respective control lines.
  • the magnetic fields respectively generated jointly by the first and second control lines produce at their crossing point a magnetic field sufficient for switching the magnetization direction of the respective switchable magnetic layer.
  • the ferromagnetic materials used in such MRAM cells are usually made magnetic anisotropic to stably obtain the local magnetization direction after writing a magnetic bit.
  • the magnetic fields necessary for switching the local magnetization direction should not exceed a few 100 A / m for technical reasons.
  • Anisotropy of the magnetic layers may be achieved due to the crystal anisotropy of the material used, the lateral shaping of the layer package, by targeted layer-stretching effects and / or also by pre-structuring of the substrate used. It comes to the award of at least one axis of easy magnetization, the so-called uniaxial magnetic anisotropy. Also anisotropies with two easy axes of magnetizability are possible, the so-called fourfold or even cubic anisotropy. Stable states of the magnetization direction are those substantially parallel or antiparallel to the anisotropy axis.
  • such MRAM cells can usually be operated in the so-called damping mode or in the so-called precession mode.
  • Switching in the attenuation mode is based on the nucleation of a magnetic domain with a magnetization in opposite direction to the current direction of magnetization of the switchable magnetic layer of the cell. This inverse domain grows as a function of time as long as the panel is applied until the total magnetization of the cell is inverted.
  • the precession mode switch is based on a precession of the total magnetization of the switchable magnetic layer of the cell about the local direction of the applied magnetic field. At comparable magnetic field strengths, switching in precession mode is about 1 to 2 orders of magnitude faster than switching in damping mode, but considerable instabilities have to be accepted for this.
  • a disadvantage may in particular be that, given a comparatively highly selected surface or packing density of the MRAM cells, stray fields can occur on the substrate between adjacent MRAM cells which, in the manner of a crosstalk, can also trigger unwanted switching processes in MRAM cells that are not actually addressed ,
  • the invention is therefore based on the object of specifying an M RAM memory element of the type mentioned above, with the writing or switching processes with high reliability are made possible in a particularly simple manner, even with particularly short switching times. Furthermore, a particularly suitable method for storing information in such an MRAM cell should be specified.
  • this object is achieved according to the invention with a plurality of third control lines likewise routed on the substrate via the crossing points of the line matrix such that each of the third control lines crosses each of the first and each of the second control lines at most once.
  • the third control lines are expediently designed to be energized independently of each other and by the first and second control lines, for which purpose, for example, suitable insulation between the respective control lines may be provided.
  • each of the control lines can be acted upon with only a partial flow of the total required drive current, wherein by suitable electrical interconnection of the control lines with each other only in the range of actually controlled MRAM ZeIIe a sufficiently high for the switching magnetic field by superposition of the partial streams respectively supplied magnetic fields is achieved.
  • the magnetic field generated by the drive current for the first control line is only a fraction of the required switching field, so that no unwanted switching operations in currently not controlled MRAM cells occur.
  • a particularly reliable and stable switching between two conceivable states of magnetization of the switchable magnetic layer can be achieved, whereby in particular an otherwise necessary so-called "pre-read", ie previous reading of the current actual state of the switchable magnetic layer can be dispensed with.
  • the anisotropy axis of the switchable magnetic layer is advantageously in the nature of a "magnetically light" axis by the crystal structure of the magnetic layer forming material and / or by the lateral or external shaping of the multilayer package or the switchable magnetic layer and / or by a suitable pre-structuring of the substrate.
  • the anisotropy in the switchable magnetic layer provided for the formation of the desired magnetic preferred direction can be produced, for example, by a suitably selected anisotropic crystal structure of the material, by the choice of anisotropic contouring of the multilayer package, such as an ellipsoidal design, or by a suitable combination of both measures
  • the contouring of the multilayer pac may be carried out, for example, by appropriately prestructuring the substrate in its surface prior to application of the multilayer package so that when depositing the multi-layer package, deposition takes place only on selected surface parts of the substrate.
  • a material having a cubic or uniaxial anisotropy at room temperature is provided as the base material for the switchable magnetic layer.
  • cubic materials are, in particular, iron, iron-cobalt (FeCo), iron-platinum (FePt) or cobalt with cubic-face-centered crystal structure (Fcc-Co).
  • FeCo iron, iron-cobalt
  • FePt iron-platinum
  • Fcc-Co cobalt with cubic-face-centered crystal structure
  • Cobalt with hexagonal structure and / or permalloy (iron-nickel alloy) are particularly suitable as uniaxial materials.
  • a ferromagnetically cubic anisotropic material due to the crystal structure can also be used for the formation of a layer package with uniaxial magnetic anisotropy.
  • the long axis of a laterally elliptically shaped layer package is to be laid along one of the anisotropy axes of the ferromagnetic layer.
  • the anisotropy axis or magnetically easy axis of the switchable magnetic layer is oriented approximately perpendicular to the second control line, wherein the first and the third control line are parallel to each other and opposite to the MRAM cells Anisotropy axis and / or compared to the orthogonal to the second control line by a tilt angle> 0 ° are performed. A particularly high stability when switching is achieved with a tilt angle> 0 °.
  • the second control line can be identified with the wordline, whereby the first and the third control line correspond to the bitline.
  • the bit line is thus formed in the manner of a segmentation of two sub-lines and tilted in their entirety in the region of the respective MRAM cell with respect to the orthogonal.
  • the bit line formed by the first and the third control line on the one hand and the Wordline formed by the second control line on the other hand can be so selectively acted upon with control current pulses that locally in the region of the respective switchable magnetic layer for the switching operation particularly favorable switching field can be adjusted. Due to the tilting of the first and third control line, the generation of two overlapping magnetic switching fields in the region of the switchable magnetic layer is possible, in particular by suitable energization of the first and third and possibly the second control line, which are equal in magnitude and sufficiently high in magnitude. to generate any change in the magnetization in the switchable magnetic layer, on the other hand in its component parallel to the anisotropy axis are aligned opposite to each other.
  • the magnetic state of the switchable magnetic layer can be destabilized in a first phase of the writing process by generating one of these switching fields, so that a specific adjustment of the magnetization can take place independently of the previous state of the MRAM cell. This is done in a second phase of the shift in response to the designed panel.
  • the final state that is, the magnetization remaining after the switching process, is defined here via the respective last switching field and its field component parallel to the anisotropy axis.
  • a stable switching is possible in a switching time of less than 1 us. Longer switching times are also possible and further increase the stability. Switching is also possible with those fields that can be generated in purely unipolar operation of the currents on the addressing lines.
  • the desired particularly stable and selective switching of the driven M RAM cell in particular even without the need for a prior read-out, can be achieved by applying the switchable magnetic layer with suitably selected magnetic switching fields In this case, they are generated in such a way that their magnitude is approximately the same, but they are tilted by opposite angles relative to the orthogonal axis to the anisotropy axis of the switchable magnetic layer - and thus to the second control line - by resorting to a suitable energization of the second control line MRAM ZeIIe on the one hand and the first and third control line of the MRAM ZeIIe other hand, such panels can be generated in a particularly simple manner by advantageously for generating one of the panels H 1, the first and third control line with a first control line drive current beau be hit.
  • the switching field H 1 generated in this way has a tilting with respect to the orthogonal to the anisotropy axis of the magnetic layer in accordance with the tilting of the first control line with respect to the anisotropy axis of the magnetic layer.
  • a further second switching field H 2 which is approximately the same size but opposite to the orthogonal to the anisotropy axis, is additionally produced by applying the first control line drive current to the first and third control lines, and at the same time the second control line is applied to a second control line drive current whose amount is approximately equal to twice the product of the sum of the sum of the drive currents of the first and third control line and the sine of the tilt angle is selected.
  • the desired switching field H 2 which in terms of magnitude is similar to the first switching field, but opposite to the orthogonal to the anisotropy axis, is produced in this case.
  • the reliable switching to the desired final state can be achieved even without prior design of the respective cell.
  • the particularly favorable switching properties are due to such an embodiment that during the switching pulse, the magnetization of the switchable magnetic layer is sufficiently destabilized regardless of their previously assumed state, so that the magnetization of the switchable magnetic layer can finally be converted into the desired final state by the switching pulse.
  • an M RAM memory system with a number of MRAM cells of the type mentioned is advantageously provided with control electronics via which the second control line of the or each MRAM cell is provided with a drive current equal to twice the product the sum of the drive currents of the first and the third control line of the respective MRAM cell and the sine of the tilt angle can be acted upon.
  • the stated object is achieved in that, in the case of a tilted routing of the control lines relative to one another, the first and third control lines are supplied with drive currents of a sum total of a first drive current and the second control line with a second drive current second drive current at least approximately equal to twice Product is selected from the amount of the first drive current and the sine of the tilt angle.
  • the drive current for the second control line advantageously chosen so large that the resulting magnetic field in its direction by a few °, preferably about 20 ° , is inclined relative to the axis perpendicular to the slight magnetization.
  • the control advantageously takes place in such a way that, although a circuit takes place in precession mode, which is not necessarily performed ballistically.
  • the pulse durations in the control of the control lines are advantageously selected suitably.
  • the advantages achieved by the invention are, in particular, that a very precise individual activation is selected by the third control line provided in each case in addition to the first and the second control line, even in the case of high packing density on the substrate in purchase superegoe effects, stray fields and the like MRAM cells and their targeted switching is possible without further, in particular adjacent cells are inadvertently connected.
  • a fourth set of control lines or even further sets could be provided in order to further increase the switching precision.
  • the switching process can also be performed in a very short time, for example, of a few 100 ps, just as for very fast memory is desired.
  • such a switching process does not require any prior determination of the actual state or bit value of the MRAM cell to be described, so that sequential writing of a plurality of MRAM cells can take place without a time delay. Furthermore, such a switching process is feasible without sacrificing quality, even in the presence of bipolar stray fields, as they are built up by the adjacent MRAM cells, so that a particularly high density of the magnetic memory cells can be achieved. Furthermore, only the use of unipolar magnetic fields is necessary for said writing process, so that in each case only one direction of current is required for the control lines.
  • FIG. 1 shows an MRAM cell in cross-section
  • FIG. 2 shows the MRAM ZeIIe of FIG. 1 in plan view
  • FIG. 3 shows an M RAM memory element with a plurality of MRAM cells.
  • the MRAM cell 1 which is shown in cross-section in FIG. 1, comprises a multilayer packet 2 provided as a memory cell for an information element or a bit, which is located in the intersection region between a first control line 4 and a second control line 6 is arranged.
  • the first control line 4 and the second control line 6 can also be referred to as "bitlines” or "wordlines” with regard to known systems of this type.
  • the first control line 4 and the second control line 6 are guided in the manner of conventional interconnects on a substrate not shown in detail, arranged in the illustration of FIG. 1 below the second control line 6.
  • FIG. 1 In the exemplary embodiment according to FIG.
  • the first control line 4 is thus arranged above the second control line 6 and thus also above the multilayer packet 2; Alternatively, however, the first control line 4 below and the second control line 6 above the multilayer package 2 or both control lines 4, 6 above or below the multilayer package 2 may be arranged.
  • the multilayer packet 2 comprises, above an insulating intermediate layer 7 arranged on the second control line 6, a magnetic reference layer 8 which magnetically fixes magnetization in a direction substantially perpendicular to the direction of extent of the magnet by means of suitable technological methods such as, for example, surface textures, coupling to a further magnetic reference layer or the like second control line 6 has.
  • a shieldable magnetic layer 12 Disposed above the magnetic reference layer 8 and separated therefrom by a spacer layer 10 is a shieldable magnetic layer 12 whose magnetization direction can be switched over. It serves either as a tunnel barrier in the construction of the layer package as a TMR MRAM cell or as a conductive, non-magnetic intermediate layer in the construction of the layer package as a GMR MRAM cell.
  • the spacer layer 10 is designed to be comparatively thin.
  • the reference layer 8 and also the switchable magnetic layer 12 are each designed as ferromagnetic layers, wherein as base materials suitable ferromagnetic materials such as nickel, iron, cobalt or alloys of these materials can be used with each other or with other non-magnetic or magnetic materials.
  • the multilayer package 2 is separated from the overlying first control line 4 by means of an insulating layer 14.
  • an intermediate layer 15 As the illustration in Fig. 1 also can be seen, above the first control line 4 is separated from this by an intermediate layer 15 and electrically insulated third control line 16 is arranged.
  • the switchable magnetic layer 12 has a magnetization which is aligned substantially parallel to the basal plane of the substrate, but can assume different alignments in this plane.
  • the switchable magnetic layer 12 is designed with a substantially uniaxial or cubic anisotropy such that it has a easy axis of magnetization in the direction parallel to the magnetization of the reference layer 8 and orthogonal to the direction of the second control line 6 generates.
  • This anisotropy which is symbolized by an anisotropy axis 20 extending in the direction of the possible magnetization states, is generated in the exemplary embodiment by a magnetocrystalline anisotropy of the base material of the magnetic layer 12 in combination with a shape anisotropy of the multilayer package 2 in the substrate plane.
  • the multi-layer package 2 designed elliptical in its planar configuration, wherein the longer main axis is parallel to the anisotropy axis 20.
  • the anisotropy axis 20 is thus aligned perpendicular to the second control line 6.
  • To reinforce and support the desired anisotropy effects is also provided as a base material for the magnetic layer 12 as a particularly suitable material iron with cubic anisotropy or Permalloy with uniaxial anisotropy.
  • the MRAM ZeIIe 1 is designed for a particularly stable and reliable switching with particularly short switching times in the range of less than a nanosecond.
  • a specific routing of the control lines 4, 6, 16, 18 is provided on the substrate, as shown in the illustrations in Fig. 2 and in Fig. 3 can be removed.
  • the MRAM cells 1 are arranged on the substrate in the manner of a regular two-dimensional grid.
  • the first control lines 4 and the second control lines 6 are guided substantially rectilinearly in the manner of a line matrix, the points of intersection of the first control lines 4 with the second control lines 6 corresponding to the positioning of the MRAM cells on the sub-line. strat.
  • the first control lines 4 and the second control lines 6 correspond to their routing according to the bit or Wordlines conventional MRAM Speicherlemente.
  • the additionally provided third control lines 16 and fourth control lines 18 are deliberately guided such that a selective driving of individual M RAM cells 1 is ensured with low crosstalk effects and unwanted switching operations.
  • the third control lines 16 and the fourth control lines 18 are routed locally parallel to the respective first control line 4 and thus locally complement the bit line of the respective MRAM cell 1.
  • the Bitline associated drive current thus "distributed" to the respective MRAM ZeIIe 1 individually associated first, third and fourth control line 4, 16, 18.
  • the third and fourth control lines 16, 18 are guided differently from the first control lines 4 with respect to their routing between the individual MRAM cells.
  • the wiring is provided such that each of the third control lines 16 crosses each of the first and each of the second control lines 4, 6 at most once, and also that each of the fourth control lines 18 crosses each of the first and each of the second control lines 4, 6 at most once ,
  • the third and fourth control lines 16, 18 between the crossing points of this matrix in the exemplary embodiment are "diagonal", as is particularly apparent from the illustration in FIG becomes clear.
  • the first control line 4 together with the third and fourth sterlet lines 16, 18, is tilted relative to the anisotropy axis 20 in the region of the respective MRAM cell 1 by a tilt angle .beta.
  • a magnetic switching field H 1 is generated in the area of the multilayer packet 2 which due to the tilted arrangement of the first control line 4 in turn tilted by the tilt angle ß to the second control line 6 and thus aligned to the orthogonal to the anisotropy axis 20.
  • the appropriate admission of the second control line 6 may also be provided with a second control line drive current.
  • the control of the second control line 6 should in this case take place in such a way that in the phase in which both the first control line drive current and the second control line drive current are actively switched, a second magnetic switch field H 2 is applied in the area of the multilayer package 2 , which is from Amount ago about the same size as the first magnetic switching field H 1 , but is tilted relative to the second control line 6 by the tilt angle ß in the other direction.
  • a second magnetic switch field H 2 is applied in the area of the multilayer package 2 , which is from Amount ago about the same size as the first magnetic switching field H 1 , but is tilted relative to the second control line 6 by the tilt angle ß in the other direction.
  • the second control line 6 is acted upon by a second control line drive current whose amount is approximately equal to twice the product of the amount of the first control line. Drive current and the sine of the tilt angle ß is selected.
  • the already existing magnetization of the switchable magnetic layer 12 can first be destabilized, with a targeted switching to the desired direction of magnetization subsequently taking place from the unstable state.
  • a reliable and reliable switching of the MRAM ZeIIe 1 possible without previously a readout of Magnetization state of the switchable magnetic layer 12 would be required.
  • the energization of the first, third and fourth control lines 4, 16, 18 provided for generating the first switching field H 1 can take place at almost the same time or to a lesser extent with a time delay.
  • the first switching field H 1 builds up additively from the sub-fields generated by the current contributions in the first, third and fourth control lines 4, 16, 18.
  • the tilt angle ⁇ should assume a suitable value of up to 45 °, depending on the ferromagnetic material and the type of layer pacemaker.
  • a particularly favorable, in particular a particularly stable and reliable switching behavior can be achieved by setting the tilt angle ⁇ in a range between 3 ° and 35 ° C. , more preferably in a range of at least 7.5 ° and / or until to 20 °, is selected. Accordingly, in the exemplary embodiment according to FIG. 2, an angle of approximately 19 ° is selected as the tilt angle ⁇ .

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)

Abstract

L'invention concerne un élément de mémoire MRAM (30) présentant tune pluralité de premières lignes de commande (4) guidées sur un substrat qui forment, avec une pluralité de deuxièmes lignes de commande (6), guidées de la même façon sur le substrat, une matrice de lignes dans laquelle est disposée une cellule MRAM (1) dans chaque zone de croisement entre une première ligne de commande (4) et une deuxième ligne de commande (6). Chaque cellule MRAM (1) comprend un paquet multicouche (2) ayant au moins une couche de référence magnétique (8) et une couche magnétique (12) commutable présentant un axe d'anisotropie (20). L'invention a pour but de fournir un dispositif du type précité permettant d'effectuer de manière particulièrement simple, des opérations d'écriture ou de commutation d'une haute fiabilité, dans des temps de commutation particulièrement courts. A cet effet, l'invention est caractérisée en ce qu'il est prévu une pluralité de troisièmes lignes de commande (16), guidées de la même façon sur le substrat, via les points de croisement de la matrice de lignes, et en ce que le guidage des lignes est effectuée de façon que chacune des troisièmes lignes de commande (16) croise, au maximum une fois, chacune des premières et chacune des deuxièmes lignes de commande (4, 6).
PCT/EP2007/007239 2006-08-17 2007-08-16 Élément de mémoire mram et procédé permettant de mettre en mémoire une information dans une cellule mram Ceased WO2008019851A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006038510.1 2006-08-17
DE200610038510 DE102006038510A1 (de) 2006-08-17 2006-08-17 MRAM-Zelle und Verfahren zum Einspeichern einer Information in eine MRAM-Zelle

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002007166A2 (fr) * 2000-07-18 2002-01-24 Micron Technology, Inc. Architectures pour memoire vive magneto-resistive autorisant une selectivite accrue
US6510080B1 (en) * 2001-08-28 2003-01-21 Micron Technology Inc. Three terminal magnetic random access memory
US20040084702A1 (en) * 2002-11-01 2004-05-06 Won-Cheol Jeong Magnetic memories with bit lines and digit lines that intersect at oblique angles and fabrication methods thereof
US20040109346A1 (en) * 2002-12-07 2004-06-10 Smith Kenneth K. MRAM having two write conductors
US20060146602A1 (en) * 2005-01-06 2006-07-06 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM cell with reduced write current

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2041509A5 (fr) * 1969-04-28 1971-01-29 Thomson Csf
US6392924B1 (en) * 2001-04-06 2002-05-21 United Microelectronics Corp. Array for forming magnetoresistive random access memory with pseudo spin valve
US6891193B1 (en) * 2002-06-28 2005-05-10 Silicon Magnetic Systems MRAM field-inducing layer configuration
US6917087B2 (en) * 2003-02-21 2005-07-12 Micron Technology, Inc. Tilted array geometry for improved MRAM switching

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002007166A2 (fr) * 2000-07-18 2002-01-24 Micron Technology, Inc. Architectures pour memoire vive magneto-resistive autorisant une selectivite accrue
US6510080B1 (en) * 2001-08-28 2003-01-21 Micron Technology Inc. Three terminal magnetic random access memory
US20040084702A1 (en) * 2002-11-01 2004-05-06 Won-Cheol Jeong Magnetic memories with bit lines and digit lines that intersect at oblique angles and fabrication methods thereof
US20040109346A1 (en) * 2002-12-07 2004-06-10 Smith Kenneth K. MRAM having two write conductors
US20060146602A1 (en) * 2005-01-06 2006-07-06 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM cell with reduced write current

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