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WO2008018319A1 - MONOCRISTAL SiC, SON PROCÉDÉ DE FABRICATION, ET MATÉRIEL DE FABRICATION POUR MONOCRISTAL SiC - Google Patents

MONOCRISTAL SiC, SON PROCÉDÉ DE FABRICATION, ET MATÉRIEL DE FABRICATION POUR MONOCRISTAL SiC Download PDF

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Publication number
WO2008018319A1
WO2008018319A1 PCT/JP2007/064966 JP2007064966W WO2008018319A1 WO 2008018319 A1 WO2008018319 A1 WO 2008018319A1 JP 2007064966 W JP2007064966 W JP 2007064966W WO 2008018319 A1 WO2008018319 A1 WO 2008018319A1
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Prior art keywords
single crystal
sic
raw material
crystal sic
supply pipe
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Ceased
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PCT/JP2007/064966
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English (en)
Japanese (ja)
Inventor
Masanori Ikari
Toru Kaneniwa
Takao Abe
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Shin Etsu Chemical Co Ltd
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Shin Etsu Chemical Co Ltd
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Publication of WO2008018319A1 publication Critical patent/WO2008018319A1/fr
Anticipated expiration legal-status Critical
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies

Definitions

  • the present invention relates to single crystal SiC used as a semiconductor device material or LED material, a manufacturing method thereof, and a single crystal SiC manufacturing apparatus.
  • Single-crystal SiC (silicon carbide) is useful as a material for harsh environment-resistant devices and power devices because of its large crystal bond energy, large dielectric breakdown electric field, and high thermal conductivity. It is also useful as a substrate material for GaN LED because its lattice constant is close to that of GaN.
  • this single crystal SiC is manufactured by using the Rayleigh method in which SiC powder is sublimated in a graphite crucible and the single crystal SiC is recrystallized on the inner wall of the graphite crucible, and the raw material arrangement and temperature are based on this Rayleigh method.
  • An improved Rayleigh method in which the SiC seed single crystal is placed in the part to be recrystallized by optimizing the distribution and epitaxially recrystallized, and the gas source is transported onto the SiC seed single crystal heated by the carrier gas, and the crystal surface CVD method for chemical growth with chemical reaction, and sublimation proximity method for epitaxially recrystallizing SiC powder on SiC seed single crystal with SiC powder and SiC seed single crystal in proximity in a graphite crucible and so on.
  • each of these single crystal SiC manufacturing methods is considered to have problems.
  • the Rayleigh method can produce single-crystal SiC with good crystallinity, crystal growth is based on spontaneous nucleation, so shape control and crystal surface control are difficult, and large-diameter wafers can be obtained. There is no problem.
  • the improved Rayleigh method a large-diameter single-crystal SiC ingot can be obtained at a high speed of several lOO ⁇ m / h, but since the crystal grows in a spiral shape, many micropipes are generated in the crystal. There is a problem.
  • the CVD method can produce high-quality single crystal SiC with high purity and low defect density.
  • the upper limit of the growth rate is about 10 m / h, which is slow and slow.
  • the sublimation proximity method enables high-purity SiC epitaxial growth with a relatively simple configuration.
  • the reaction of formula (1) is a chemical reaction, and the force, or SiO, can exist as a flowing liquid until immediately before evaporation by heating. Therefore, when this chemical reaction occurs continuously on a SiC seed single crystal, SiC While reducing the interfacial energy of the seed single crystal, it is considered that the SiC powder produced by reaction at any time can grow epitaxically according to the sequence information of the SiC seed single crystal.
  • the raw material supplied to the SiC seed single crystal is SiC powder, not silicon dioxide and carbon.
  • Patent Document 1 Japanese Patent No. 3505597
  • the present invention has been made to solve the above-described problems, and an object of the present invention is to produce a single-crystal SiC that epitaxially grows high-quality single-crystal SiC that prevents the incorporation of polycrystalline SiC. And a high-quality single crystal SiC obtained as a result. Furthermore, an object of the present invention is to provide an apparatus for producing single-crystal SiC that can prevent the incorporation of polycrystalline SiC and grow high-quality single-crystal SiC epitaxially. Means for solving the problem
  • ⁇ 4> The method for producing single-crystal SiC according to any one of ⁇ 1> to ⁇ 3>, wherein a distance between the raw material supply pipe and the SiC seed single crystal is 10 mm or less,
  • ⁇ 5> The method for producing single-crystal SiC according to any one of ⁇ 1> to ⁇ 4>, wherein the linear velocity of the carrier gas is 20 mm / sec or more and 200 mm / sec or less,
  • the carrier gas has a linear velocity of 60 mm / sec or more and 200 mm / sec or less. 1> to ⁇ 5>
  • the carrier gas is argon gas.
  • the present invention there is provided a method for producing single-crystal SiC in which high-quality single-crystal SiC in which polycrystalline SiC is prevented from being mixed is epitaxially grown, and the resulting high-quality single-crystal SiC is provided. I can help. Furthermore, according to the present invention, it is possible to provide a single-crystal SiC manufacturing apparatus capable of preventing the incorporation of polycrystalline SiC and growing high-quality single-crystal SiC epitaxially.
  • FIG. 1 is an example of an apparatus for producing the single crystal SiC of the present invention.
  • the method for producing a SiC single crystal of the present invention comprises a step of disposing a susceptor to which a SiC seed single crystal is fixed and a raw material supply pipe for supplying a raw material for producing single crystal SiC from the outside in a crucible, Supplying the raw material for producing the single crystal SiC together with a carrier gas through the raw material supply pipe into the crucible in a high-temperature atmosphere, and growing the single crystal SiC, the raw material supply pipe, the SiC seed single crystal, Is L (mm), and the carrier gas linear velocity is S (mm / sec), L / S (sec) ⁇ 3 is satisfied.
  • the interfacial energy of the SiC seed single crystal is reduced by preventing the raw material for producing single crystal SiC from becoming SiC powder before reaching the single crystal SiC growth region of the SiC seed single crystal.
  • the reaction of Formula (1) occurs at any time at the SiC seed single crystal interface, and the reaction-generated SiC grows exponentially following the sequence information of the SiC seed single crystal.
  • the raw material for producing single crystal SiC becomes SiC powder before reaching the SiC seed single crystal
  • the raw material for producing SiC is supplied by the above formula (1). It means that it becomes SiC powder before reaching the SiC seed single crystal by the reaction shown.
  • “arriving at the SiC seed single crystal” or “arriving on the SiC seed single crystal” means “arriving at the region where the growth reaction of the single crystal SiC occurs”. And / or single crystal SiC growth layer.
  • L / S (sec) is 3 or less. If L / S (sec) is greater than 3, part or all of the raw material for producing single crystal SiC will become SiC powder before reaching the SiC seed single crystal, and polycrystalline SiC powder will be added to the produced SiC single crystal. Mixed.
  • L / S (sec) is from 0.05 to 3 (in the present invention, “0.05 to 3” is
  • the distance L (mm) between the raw material supply pipe and the SiC seed single crystal is preferably 60 mm or less 1
  • the distance between the raw material supply pipe and the SiC seed single crystal is lm m or better!
  • the distance between the raw material supply pipe and the SiC seed single crystal is within the above range because a good crystal growth rate can be obtained. Furthermore, it is easy to control the distance between the raw material supply pipe and the SiC seed single crystal!
  • the distance between the raw material supply pipe and the SiC seed single crystal means the distance between the raw material supply port in the crucible of the raw material supply pipe (the raw material outlet for SiC production) and the surface of the SiC seed single crystal. Also, at the initial stage of single crystal SiC production, the distance between the SiC seed single crystal and the raw material supply port is within the above range, and as the single crystal SiC grows, the distance between the production raw material supply port and the single crystal SiC growth layer is You may adjust appropriately so that it may become a range.
  • the distance between the raw material supply pipe and the SiC seed single crystal is not particularly limited and may be adjusted by any method.
  • the raw material supply pipe can be movable, the susceptor can be movable, and the distance can be adjusted by making both of them movable.
  • the distance between the raw material supply pipe and the SiC seed single crystal can be arbitrarily set at the start of production. From the growth rate and growth time of the crystal, the distance between the raw material supply pipe and the single crystal SiC during the production of the single crystal SiC can be determined. It is possible to grasp the distance from the crystalline SiC growth layer.
  • the linear velocity S (mm / sec) of the carrier gas is preferably 20 mm / sec or more and 200 mm / sec or less, more preferably 60 mm / sec or more and 200 mm / sec or less.
  • a linear velocity of the carrier gas of 20 mm / sec or more is preferable because the raw material for producing single crystal SiC does not clog in the raw material supply pipe. In addition, it is preferable that it is 200 mm / sec or less because it can effectively prevent the raw material for producing single crystal SiC from becoming SiC powder before reaching the SiC seed single crystal.
  • the linear velocity S (mm / sec) of the carrier gas can be obtained by dividing the flow rate (mm 3 / sec) of the carrier gas to be supplied by the area (mm 2 ) of the supply port of the raw material supply pipe.
  • the raw material for producing single crystal SiC is supplied together with the carrier gas through the raw material supply pipe.
  • the raw material for producing single crystal SiC is preferably continuously supplied.
  • Single crystal SiC can be grown stably by continuously supplying raw materials for single crystal SiC. Therefore, it is preferable.
  • Silica particles and carbon particles can be suitably used as the raw material for producing single crystal SiC used in the present invention.
  • the raw materials for manufacturing the single crystal SiC are supplied in a mixed state on the SiC seed single crystal. Even if the raw materials for production are mixed, they may be supplied separately and mixed on the SiC seed single crystal.
  • solid particles of silica particles and carbon particles can be suitably used.
  • the type, particle size, particle shape and the like of these silica particles and carbon particles are not particularly limited, and for example, high purity silica obtained by flame hydrolysis, high purity acetylene black, or the like can be suitably used.
  • the ratio of the supply amount of the silica particles and the carbon particles is not particularly limited, and a desired composition ratio can be appropriately selected. Any of the above silica particles and carbon particles may be used in combination. In addition, the silica particles and carbon particles may be pretreated or a small amount of other components may be added as necessary.
  • the supply of the silica particles and the carbon particles to the SiC seed single crystal can be exemplified by a method in which the silica particles and the carbon particles are continuously supplied without interruption.
  • the powder can be transported continuously like a commercially available powder feeder. Is mentioned.
  • the supply line of the raw material for producing single crystal SiC and the inside of the single crystal SiC production apparatus have a hermetic structure substituted with an inert gas such as argon or helium in order to prevent oxygen contamination.
  • the raw material for producing SiC single crystal is supplied together with a carrier gas
  • the carrier gas include inert carrier gases such as argon gas and helium gas.
  • argon gas it is preferable to use argon gas as a carrier gas.
  • Argon gas is preferable because it is easily available and easy to handle.
  • doping When doping is performed in single crystal SiC, it may be mixed as a solid source with the raw material for manufacturing single crystal SiC, or the doping component may be used as a gas source in the atmosphere in the single crystal SiC manufacturing apparatus. May be mixed. Nitrogen, A1 (CH),
  • the SiC seed single crystal used in the present invention is preferably a SiC seed single crystal wafer.
  • the type, size, and shape are not particularly limited, and can be appropriately selected depending on the type, size, and shape of the target single crystal SiC.
  • a SiC seed single crystal wafer obtained by pretreating a SiC single crystal obtained by the modified Rayleigh method if necessary can be suitably used.
  • the production temperature of the single crystal SiC is not particularly limited, and can be appropriately set according to the size, shape, type, etc. of the target single crystal SiC, and the preferred production temperature is in the range of 1, 600-2, 400 ° C. For example, this temperature can be measured as the temperature outside the crucible.
  • the configuration of the single crystal SiC manufacturing apparatus used for obtaining the single crystal SiC of the present invention is not particularly limited.
  • size, heating method, material, raw material supply method, atmosphere adjustment method, pressure control method, temperature control method, etc. are the size, shape and type of target single crystal SiC, the type and amount of raw material for single crystal SiC production, etc. It can be appropriately selected depending on the situation.
  • the shape of the crucible used in the present invention is not particularly limited as to the outer shape, and can be appropriately selected according to the size and shape of the target single crystal SiC.
  • the crucible used in the present invention in addition to a hole for inserting a susceptor holding a SiC single crystal and a hole for inserting a raw material supply pipe for supplying a raw material for producing single crystal SiC, It is preferable to have an opening on the upper surface in the vertical direction when the crucible is arranged. By providing an opening in the crucible, the atmosphere gas in the crucible that rises as an updraft due to thermal convection, and the raw material powder that did not contribute to the reaction that rises on the atmosphere gas in the same way, from the top. It is preferable because it can be escaped.
  • the opening is not particularly limited as long as it is provided on the upper surface in the vertical direction of the crucible, but when the susceptor or the raw material supply pipe is inserted from the upper surface in the vertical direction of the crucible, the susceptor or the raw material supply It is preferred to have an opening around the tube. Arranging the openings as described above is preferable because a temperature drop in the crucible can be prevented.
  • the size of the opening is not particularly limited, but the atmospheric gas that rises as an updraft by thermal convection and the raw material powder that did not contribute to the reaction that rises on the atmospheric gas in the same way are effective from the crucible. It is preferable to select appropriately within a range that can be removed. In addition, the size of the opening is preferably selected as long as the temperature inside the crucible does not decrease. [0029]
  • the shape of the susceptor holding the SiC seed single crystal is not particularly limited, and can be appropriately selected according to the size and shape of the target single crystal SiC. However, the material of the susceptor is preferably made of Graphite, taking into consideration the operating temperature range.
  • the shape of the raw material supply pipe for supplying the raw material for producing single crystal SiC is not particularly limited, and can be appropriately selected according to the size and shape of the target single crystal SiC.
  • the distance between the outlet of the supply pipe and the susceptor holding the SiC seed single crystal is preferably 60 mm or less, and particularly preferably 10 mm or less.
  • the material is preferably made of graphite in consideration of the operating temperature range.
  • the carrier gas is not limited, but an inert gas is preferred, and Ar gas is particularly preferred.
  • the linear velocity at which this carrier gas is blown out from the raw material supply pipe is preferably 20 mm / sec or more and 200 mm / sec or less, more preferably 60 mm / sec or more and 200 mm / sec or less! / ,.
  • FIG. 1 is an example of an apparatus for producing the single crystal SiC of the present invention.
  • a high frequency induction heating furnace is used as an example.
  • a carbon-made cylindrical crucible 2 (diameter: 100 mm, height: 150 mm) is disposed in a water-cooled sealed chamber 1, and a high-frequency induction heating coil 3 is disposed outside the water-cooled sealed chamber 1.
  • a susceptor 5 for holding the SiC seed single crystal 4 is inserted through the upper portion of the cylindrical crucible 2.
  • the susceptor 5 extends to the outside of the cylindrical crucible 2 and can be rotated about the central axis of the susceptor by a rotation mechanism (not shown).
  • the normal direction of the surface holding the SiC seed single crystal wafer at the lower end of the susceptor can preferably be freely set to be approximately parallel to the vertical direction of the susceptor and inclined at a maximum of 45 °.
  • an opening 10 is provided around the susceptor 5 in the upper part of the cylindrical crucible 2 in the vertical direction.
  • the raw material supply pipe 6 for supplying the raw material particles for producing single crystal SiC extends outward from the lower surface of the cylindrical crucible 2 opposite to the susceptor 5 and is directly connected to the outer side of the sealed chamber 1.
  • the raw material supply pipe 6 for supplying the raw material particles for producing single crystal SiC extends outward from the lower surface of the cylindrical crucible 2 opposite to the susceptor 5 and is directly connected to the outer side of the sealed chamber 1.
  • They are arranged outside the high-frequency induction heating furnace and independently supplied. It is connected to a plurality of adjustable raw material storage tanks 7 and 7 'and a carrier gas supply source (not shown) whose flow rate is adjustable.
  • the distance L between the raw material supply pipe 5 and the SiC seed single crystal or the growth layer 9 can be controlled.
  • the distance L can be adjusted by changing the position of the raw material supply pipe 6 or can be adjusted by changing the position of the susceptor 5.
  • the high-frequency induction heating furnace can be pressure-controlled by a vacuum exhaust system and a pressure control system (not shown), and is equipped with an inert gas replacement mechanism (not shown).
  • the positional relationship between the susceptor and the raw material supply pipe is a vertically-facing relationship, but within the range in which the operation of the present invention does not change, each can be arranged in a laterally facing relationship, It is also possible to arrange the supply pipe and the susceptor obliquely or at right angles to each other.
  • a single crystal SiC layer (growth layer) 9 is formed on the SiC seed single crystal 4 and increases in thickness with growth.
  • the SiC seed single crystal 4 is fixed to the tip of the susceptor 5 in the crucible, and the distance L (mm) between the SiC seed single crystal surface and the raw material supply pipe outlet is 1 mm to 150 mm ( (Full length of crucible) can be adjusted freely.
  • the linear velocity S (mm / Sec ) of the carrier gas can be freely set from approximately Omm / sec to 300, OOOmm / sec. Can be adjusted.
  • SiC seed single crystal was fixed to the end of the susceptor inserted into the cylindrical crucible.
  • the SiC seed single crystal used here is a single crystal SiC wafer with a diameter of 2 cm manufactured by the modified Rayleigh method. However, there are various surface conditions: just surface, inclined surface, C surface, Si Each surface was prepared and used.
  • Carbon carbon black MA600 manufactured by Mitsubishi Chemical Corporation
  • silica Alignment 380 manufactured by Nippon Aerosil Co., Ltd.
  • the position of the outlet of the raw material supply pipe was adjusted so that the distance from the SiC seed single crystal wafer was 1 mm to 150 mm.
  • the inside of the high frequency induction heating furnace was replaced with an inert gas (high purity argon).
  • the temperature was raised by the high frequency induction heating coil until the temperature outside the cylindrical crucible made of carbon was in the range of 1, 600-2, 400 ° C.
  • the susceptor on which the SiC seed single crystal wafer was fixed was rotated at a rotation speed of 0 to 20 rpm.
  • the inert carrier gas (high-purity argon) is adjusted to a linear velocity in the range of 10 to 500 mm / sec, and the raw material for producing single crystal SiC passes through the inside of the supply pipe and passes through the inside of the cylindrical crucible. It was made to supply on the surface of the said SiC seed single crystal wafer arrange
  • the temperature of the outside of the cylindrical crucible is kept constant, and the single crystal SiC raw material is continuously supplied until the single crystal SiC has a desired size and thickness.
  • Single crystal SiC was manufactured.
  • the desired temperature is preferably selected as appropriate depending on the atmospheric pressure, the raw material mixing ratio for producing single crystal SiC, the kind of SiC seed single crystal wafer, and the like.
  • Table 1 shows the results of producing single-crystal SiC under the above conditions.
  • the presence or absence of polycrystalline SiC in the manufactured single crystal SiC was evaluated by observing a thin layer sample of the manufactured single crystal SiC with a transmission optical microscope under polarized light (crossed nicols).
  • Example 16 100 0.8? ⁇ 3 ⁇ 4? is
  • the linear velocity of the inert carrier gas is preferably 10 mm / sec or higher, and more preferably 20 mm / sec or higher for safety.
  • the distance L between the SiC seed single crystal wafer and the raw material supply pipe is 10 mm or less, the occurrence of micropipes is further avoided. It is more preferable that the distance L between the SiC seed single crystal wafer and the raw material supply pipe is 10 mm or less. It became clear that power.
  • the distance between the SiC seed single crystal and the raw material supply pipe outlet is preferably 60 mm or less, particularly preferably 10 mm or less.
  • the linear velocity of the inert carrier gas is 20 mm / sec or more and 200 mm / sec or less. Force S is preferable, 60 mm / sec or more and 200 mm / sec or less is particularly preferred! / ⁇ .
  • the single-crystal SiC manufacturing method of the present invention was able to stably manufacture and provide high-quality single-crystal SiC in which mixing of polycrystalline SiC was suppressed.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

La présente invention concerne un procédé de fabrication de monocristal SiC qui empêche que du polycristallin SiC ne s'y mélange et qui peut faire pousser épitaxialement un monocristal SiC de haute qualité, et un monocristal SiC de haute qualité obtenu par ce procédé. L'invention concerne également un matériel de fabrication de monocristal SiC capable d'empêcher que du polycristallin SiC ne s'y mélange et de faire pousser épitaxialement un monocristal SiC de haute qualité. Le procédé de fabrication de monocristal SiC comprend une étape consistant à déposer dans un creuset un tuyau d'alimentation en matériau pour fournir un matériau destiné à la fabrication du monocristal SiC à partir d'un suscepteur, sur lequel est fixée une semence de monocristal SiC, et à partir de l'extérieur ; et une étape consistant à fournir le matériau destiné à la fabrication du monocristal SiC ainsi qu'un gaz porteur à travers le tuyau d'alimentation en matériau vers le creuset sous atmosphère à haute température, et à faire pousser le monocristal SiC. Lorsque la distance entre le tuyau d'alimentation en matériau et la semence du monocristal SiC est indiquée par L (mm) et la vitesse linéaire du gaz porteur par S (mm/sec), la condition L/S (sec) ≤ 3 est satisfaite.
PCT/JP2007/064966 2006-08-09 2007-07-31 MONOCRISTAL SiC, SON PROCÉDÉ DE FABRICATION, ET MATÉRIEL DE FABRICATION POUR MONOCRISTAL SiC Ceased WO2008018319A1 (fr)

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JP2006216351A JP2008037715A (ja) 2006-08-09 2006-08-09 単結晶ＳｉＣ、その製造方法及び単結晶ＳｉＣの製造装置
JP2006-216351 2006-08-09

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Citations (2)

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JP2001233697A (ja) * 2000-02-23 2001-08-28 Nippon Pillar Packing Co Ltd 炭化珪素単結晶
JP2004099414A (ja) * 2002-09-13 2004-04-02 National Institute Of Advanced Industrial & Technology 炭化珪素単結晶の製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3909675B2 (ja) * 2001-04-20 2007-04-25 信越半導体株式会社 シリコン単結晶の製造装置及びそれを用いたシリコン単結晶の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001233697A (ja) * 2000-02-23 2001-08-28 Nippon Pillar Packing Co Ltd 炭化珪素単結晶
JP2004099414A (ja) * 2002-09-13 2004-04-02 National Institute Of Advanced Industrial & Technology 炭化珪素単結晶の製造方法

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TW200809019A (en) 2008-02-16
JP2008037715A (ja) 2008-02-21

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