WO2008010310A1 - Retainer ring of double-layer structure - Google Patents
Retainer ring of double-layer structure Download PDFInfo
- Publication number
- WO2008010310A1 WO2008010310A1 PCT/JP2007/000609 JP2007000609W WO2008010310A1 WO 2008010310 A1 WO2008010310 A1 WO 2008010310A1 JP 2007000609 W JP2007000609 W JP 2007000609W WO 2008010310 A1 WO2008010310 A1 WO 2008010310A1
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- WIPO (PCT)
- Prior art keywords
- ring
- retainer
- retainer ring
- layer structure
- layer
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
- B24B37/32—Retaining rings
Definitions
- the present invention is disposed (mounted) in a holding head of a CMP (chemical mechanical polishing) apparatus that chemically and mechanically polishes a wafer (object to be polished).
- CMP chemical mechanical polishing
- the present invention relates to a retainer ring having a two-layer structure in which a first ring and a second ring are overlapped and integrated.
- This CMP apparatus includes, for example, a rotatable surface plate, a polishing pad disposed on the surface plate, a holding head for holding a wafer and pressing the polishing pad, and a slurry supply nozzle Etc.
- the holding head includes a retainer ring that surrounds the outer periphery of the wafer, an elastic film that presses the upper surface of the wafer, an air chamber that is surrounded by the elastic film, the retainer ring, and the head body.
- the air chamber includes an air supply path for supplying pressurized air to the air chamber.
- the retainer ring surrounds the outer periphery of the wafer to prevent the wafer from popping out, and presses the polishing surface (surface) of the polishing pad for polishing the wafer to flatten and refine the polishing surface (optimization). Is.
- Such a retainer ring includes, for example, a two-layer structure (a two-piece structure) in which a metal first ring and an engineering plastic second ring are overlapped.
- a metal first ring and an engineering plastic second ring are overlapped.
- engineering by the first metal ring The second ring made of polyethylene is reinforced to increase the rigidity of the entire retainer ring.
- a retainer ring in which two rings are integrated (assembled) by tightening with a port is known, and a retainer ring in which two rings are integrated with an adhesive (bonding agent) is known.
- a plurality of port insertion holes 1 0 0 a are formed in the first ring 1 0 0 and the second ring 1 0 1 is A plurality of screw holes 1 0 1 a (female screws) are formed at the same position as the port insertion hole 1 0 0 a.
- the lower surface 1 1 0 a of the first ring 1 1 0 and the upper surface 1 1 1 a of the second ring 1 1 1 1 Adhesive 1 1 2 is applied, and the two rings 1 1 0 and 1 1 1 are integrated by applying pressure by overlapping the first ring 1 1 0 and the second ring 1 1 1 It is.
- a plurality of screw holes for mounting on the holding head are formed in the first ring 100 0 of the retainer ring by port tightening and the first ring 110 of the retainer ring by adhesive.
- Patent Document 1 Japanese Patent Laid-Open No. 2 0 0 _ 3 4 9 5 9
- the porch is loosened by vibrations and repeated stress (compressive stress, shear stress, etc.) associated with wafer polishing, and the second ring
- the pressing force on the polishing pad due to flatness and retainer ring may be uneven.
- all the ports do not loosen uniformly, the pressing force due to the retainer ring becomes even more uneven and unstable.
- the pressing surface directly below the hole the surface that presses the polishing surface of the polishing pad, The pressing force on the lower surface and the pressing surface of the other part will be different (the pressing force will be uneven).
- the present inventor has discovered and confirmed that the adhesive may be eluted.
- the chemical agent of the slurry could cause the adhesive to be chemically decomposed and the adhesive to elute.
- the first ring and second ring peel off, and the eluted adhesive causes scratches on the wafer.
- an object of the present invention is to provide a retainer ring having a two-layer structure in which the integration of the first ring and the second ring is firmly maintained without using an adhesive, and the pressing force is uniform.
- the invention according to claim 1 is provided so as to be detachable in the holding head of the CMP apparatus, and the annular first ring and the second ring are concentrically stacked.
- the invention according to claim 2 is the retainer ring having a two-layer structure according to claim 1, wherein the first ring and the second ring are vertically fitted and overlapped with each other. It is characterized by that.
- the first ring and the second ring are press-fitted in a vertical direction and overlapped with each other. It is characterized by.
- the invention according to claim 5 is the retainer ring having a two-layer structure according to claim 1, wherein the fixing member passes through the welded portion and the first ring and the second ring. It is characterized by being inserted into.
- the weld portion is provided between the first ring and the second ring, the integration of the first ring and the second ring is firmly maintained.
- the first ring and the second ring are integrated (joined). Even if stress or the like is applied to the retainer ring, the joint (welded part) does not loosen, and the integration of the first ring and the second ring is firmly maintained.
- the first ring and the second ring are not peeled off due to deterioration or elution of the adhesive, and scratches do not occur on the wafer due to the eluted adhesive.
- the flatness of the retainer ring (second ring) is maintained by maintaining strong integration between the first ring and second ring, and it is also necessary to provide port insertion holes and screw holes. As a result, the pressure applied to the polishing pad is uniform.
- the first ring and the second ring are arranged in the vertical direction. Since they are fitted, the integration of the first ring and the second ring becomes stronger, and it is possible to strongly counter the shearing force associated with wafer polishing (does not peel off due to the shearing force).
- the fixing member passes through the welded portion and is inserted into the first ring and the second ring, the first ring and the second ring can be integrated. It is stronger and can counteract the shearing force associated with wafer polishing.
- FIG. 1 is a front view showing a schematic configuration of a CMP apparatus according to Embodiments 1 to 3 of the present invention.
- FIG. 2 is a schematic cross-sectional view of a holding head of the CMP apparatus of FIG.
- FIG. 3A is a plan view of a first ring of a two-layered retainer ring according to Embodiment 1 of the present invention.
- FIG. 4 is a plan view (a) of a second ring of a two-layered retainer ring according to Embodiment 1 of the present invention and a B_B sectional view (b) thereof.
- FIG. 5 is a plan view (a) of a two-layered retainer ring according to Embodiment 2 of the present invention and a C_C sectional view (b) thereof.
- FIG. 6 is a plan view (a) of a two-layer structure retainer ring according to Embodiment 3 of the present invention and a D_D sectional view (b) thereof.
- FIG. 7 A perspective view (a) showing a conventional two-layer retainer ring in which the first ring and the second ring are integrated by port fastening, and an E_E sectional view (b) thereof.
- FIG. 8 is a perspective view showing a conventional two-layer structure retainer ring in which a first ring and a second ring are integrated with an adhesive.
- FIG. 1 is a front view showing a schematic configuration of a CMP apparatus 1 according to this embodiment.
- This CMP apparatus 1 has the same configuration as a widely used CMP apparatus except for a retainer ring 8 having a two-layer structure, which will be described later, and a detailed description is omitted here, but in this embodiment, A rotatable surface plate 2, a polishing pad 3 (such as a cloth) disposed on the surface plate 2, a holding head 4, a slurry supply nozzle 5 and a dresser 6 (shaping means), and a wafer W is chemically and mechanically polished.
- the holding head 4 holds the wafer W and presses the surface to be polished W1 against the polishing pad 3.
- the holding head 4 can move on the polishing pad 3 if it rotates (rotates). .
- This holding head 4 is shown in FIG. 2 in this embodiment.
- the retainer ring 8 has an annular shape, surrounds the outer periphery of the wafer W, prevents the wafer W from jumping out of the holding head 4, and polishes the polishing pad 3 for polishing the polished surface W1 of the wafer W.
- the surface 3 a (surface) is pressed, and the polished surface 3 a is flattened and refined (optimized). That is, the polishing surface 3 a of the polishing pad 3 has a low flatness due to the slurry (abrasive) 5 a and a rough surface, and the polishing surface 3 a has a flatness due to the retainer ring 8. It increases the surface roughness and decreases the surface roughness.
- This retainer ring 8 consists of a first ring 1 1 made of stainless steel (such as SUS 3 0 4 or SUS 3 1 6) and a second ring 1 2 made of a super-shearing plastic (such as PPS or PEEK). It has a two-layer structure concentrically stacked in the vertical direction. A welded portion 13 is formed between the first ring 11 located on the upper layer (head body 7 side) and the second ring 12 located on the lower layer (polishing pad 3 side). (Has welded part 1 3).
- a plurality of screw holes 1 1 b for attaching 8 to the holding head 4 are formed.
- the lower surface of the first ring 11 1 does not melt when integrated with the second ring 12, and irregularities 11 c (such as knurled eyes and wave eyes) are formed over the entire surface. ing.
- the inner diameter and the outer diameter of the second ring 1 2 are substantially the same as the inner diameter and the outer diameter of the first ring 1 1, and a pressing surface 1 2 a (lower surface) that presses the polishing surface 3 a of the polishing pad 3 As shown in FIG. 4, a plurality of groove-like slits 1 2 b are formed for escaping (discharging) polishing debris. Further, the upper surface 1 2 c before being integrated with the first ring 11 1 is formed flat (flat). [0029] The welded part 1 3 is a joined part in which the upper surface 1 2 c side upper part (one side) of the second ring 1 2 is melted and joined to the lower side of the first ring 1 1, that is, the lower part (the other).
- the first ring 11 and the second ring 12 are integrated by the welded portion 13.
- bonding is a broad concept including adhesion, fusion, fusion, and bonding.
- This welded part 1 3 is formed by welding, high frequency welding by high frequency induction heating, heat welding heated by heat conduction from an external heat source (hot plate welding, hot air welding, impulse welding, iron welding Which method is used, such as ultrasonic welding using frictional heat generated by ultrasonic vibration, laser welding using heat generated by laser irradiation, or infrared welding using heat generated by infrared irradiation?
- the first ring 1 1 and the second ring 1 2 are selected according to the material and shape of the ring. Also, as shown in Fig. 2, the first ring 11 side (upper surface side) of the welded part 13 has a shape that follows (follows) the unevenness 11c as it melts and solidifies (solidifies). Yes.
- the first ring 1 According to the two-layered retainer ring 8 configured as described above, the first ring 1
- the integration of the first ring 1 1 and the second ring 1 2 is firmly maintained. That is, the upper surface 12 c side of the second ring 12 2 is melted and joined to the lower surface side of the first ring 11, so that the first ring 11 and the second ring 12 are integrated (joined). Therefore, even if vibration or repetitive stress accompanying polishing of wafer W is applied to the retainer ring 8, the bonding (welded portion 13) does not loosen, and the first ring 11 and second ring Integration with Ring 1 2 is maintained firmly.
- the unevenness 1 1 c is formed on the lower surface of the first ring 1 1, and the first ring 1 1 side of the welded portion 1 3 is shaped along the unevenness 1 1 c.
- the joint area with the second ring 1 2 increases, the joint becomes three-dimensional (three-dimensional).
- the integration (joining) of the first ring 1 1 and the second ring 1 2 becomes stronger.
- the first ring 1 1 and the second ring 1 2 may be peeled off due to deterioration or elution of the adhesive, or due to the eluted adhesive, No scratches occur.
- the first ring 1 1 and the first Since the flatness of the retainer ring 8 (second ring 1 2) is maintained by maintaining the strong integration with the 2 ring 1 2, it is not necessary to provide a port insertion hole or screw hole. The pressing force to the polishing pad 3 becomes uniform.
- FIG. 5 is a plan view (a) showing a two-layered retainer ring 20 according to this embodiment, and a CC sectional view (b) thereof.
- the first ring 21 and the second ring 22 are fitted and press-fitted, and the configuration is different from that of the first embodiment.
- the fitted press-fit part 2 1 having a circular section (concentric with the first ring 21) having a concave cross section in the thickness direction. a is formed.
- the width H 1 of the fitted press-fit portion 2 1 a is set to be slightly smaller than the width H 2 of the second ring 2 2.
- the upper part 2 2 a of the second ring 2 2 is melted and joined to the fitted press-fitted part 2 1 a of the first ring 21, thereby forming a welded part 2 3.
- the first ring 2 1 and the second ring 2 2 are integrated.
- the first ring According to the two-layered retainer ring 20 configured as described above, the first ring
- the first ring 2 1 and the second ring 2 2 can be integrated. It becomes stronger. Moreover, even if the shearing force (horizontal force in the figure) accompanying the polishing of the wafer W is applied to the second ring 22, the shearing force is applied by the side walls (both sides of the recess) of the fitted press-fit portion 2 1 a. Received (shearing force is well transmitted to the first ring 3 1). Therefore, it is possible to strongly counter the shearing force, and the first ring 21 and the second ring 22 are not separated by the shearing force.
- the shearing force horizontal force in the figure
- FIG. 6 is a plan view (a) showing a two-layer structure retainer ring 30 according to this embodiment and a DD cross-sectional view (b) thereof.
- the first The first embodiment is different from the first embodiment in that a plurality of fixing pins 3 4 (fixing members) are inserted into the ring 3 1 and the second ring 3 2.
- a plurality of insertion holes 3 1 a are formed from the lower surface of the first ring 3 1, and a plurality of insertion holes are formed from the upper surface of the second ring 3 2 at the same position as the insertion holes 3 1 a.
- 3 2 a is formed.
- the inner diameters of the insertion holes 3 1 a and 3 2 a are the same as the outer diameter of the fixing pins 3 4, and the fixing pins 3 4 are fitted into the insertion holes 3 1 a and 3 2 a ( It fits without gaps).
- the fixing pin 3 4 is a round bar made of stainless steel.
- the fixing pin 3 4 is inserted into the insertion hole 3 1 a of the first ring 3 1 and the insertion hole 3 2 a of the second ring 3 2.
- the upper part of the second ring 3 2 is melted and joined to the lower part of the first ring 3 1 to form a welded part 33, and the welded part 3 3 forms the first ring 31 and the second ring. 3 2 is integrated.
- the fixing pin 3 4 penetrates the welded portion 3 3 and is inserted into the first ring 3 1 and the second ring 3 2. Therefore, the integration of the first ring 3 1 and the second ring 3 2 becomes stronger. In addition, even if the shearing force accompanying the polishing of the wafer W is applied to the second ring 3 2, the shearing force is well transmitted to the first ring 3 1 through the fixing pins 3 4. For this reason, it is possible to strongly counter the shearing force, and the first ring 31 and the second ring 32 are not separated by the shearing force.
- the second ring located in the lower layer is melted and joined to the first ring located in the upper layer to form a welded portion.
- the first ring and the second ring are formed.
- the first ring may be melted to form the welded portion, or the first ring and the second ring are melted together to form the welded portion. You may make it do.
- the unevenness (unevenness 11 C) as described above may be formed on the upper surface of the second ring that does not melt.
- the first ring is made of stainless steel and the second ring is made of super engineering plastic, but the first ring is made of another metal, ceramic, or resin material, Of course, the second ring may be made of other resin materials.
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
明 細 書 Specification
2層構造のリテ一ナリング Two-layer retainer ring
技術分野 Technical field
[0001] 本発明は、 ウェハ (被研磨体) を化学機械的に研磨する CM P (Ch em i c a I Me c h a n i c a l Po l i s h i n g ;化学機械的研磨) 装置の保持ヘッド内に配設 (装着) されるリテーナリングに関し、 特に、 第 1 リングと第 2リングとを重ね合わせて一体化した 2層構造のリテーナリン グに関する。 [0001] The present invention is disposed (mounted) in a holding head of a CMP (chemical mechanical polishing) apparatus that chemically and mechanically polishes a wafer (object to be polished). In particular, the present invention relates to a retainer ring having a two-layer structure in which a first ring and a second ring are overlapped and integrated.
背景技術 Background art
[0002] 半導体デバイスの高集積化、 高性能化が進むに伴い、 水平方向 (平面上) の寸法が小さくなるとともに、 垂直方向の構造が微細化、 多層化されている 。 そして、 このような微細化、 多層化を実現するためには、 半導体基板 (シ リコン基板など) の平面度 (平坦度) が高い必要がある。 このため、 ウェハ の段階で平面度を高めることが求められ、 このような要求に応えるものとし て、 CM P装置が用いられている。 [0002] As the integration and performance of semiconductor devices increase, the dimensions in the horizontal direction (on the plane) become smaller, and the structure in the vertical direction becomes finer and multilayered. In order to realize such miniaturization and multilayering, the flatness (flatness) of a semiconductor substrate (such as a silicon substrate) needs to be high. For this reason, it is required to increase the flatness at the wafer stage, and CMP devices are used to meet such demands.
[0003] この CM P装置は、 例えば、 回転可能な定盤と、 この定盤の上に配置され た研磨パッドと、 ウェハを保持して研磨パッドに押圧する保持へッドおよび 、 スラリ供給ノズルなどから構成されている。 さらに、 保持ヘッドは、 ゥェ ハの外周を囲うリテーナリングと、 例えば、 ウェハの上面を押圧する弾性体 膜と、 この弾性体膜とリテーナリングとへッド本体とによって囲まれた空気 室と、 この空気室に加圧用空気を供給する空気供給路などから構成されてい る。 そして、 リテーナリングは、 ウェハの外周を囲いウェハの飛び出しを防 止するとともに、 ウェハを研磨する研磨パッドの研磨面 (表面) を押圧して 、 研磨面を平坦化、 微細化 (適正化) するものである。 [0003] This CMP apparatus includes, for example, a rotatable surface plate, a polishing pad disposed on the surface plate, a holding head for holding a wafer and pressing the polishing pad, and a slurry supply nozzle Etc. Further, the holding head includes a retainer ring that surrounds the outer periphery of the wafer, an elastic film that presses the upper surface of the wafer, an air chamber that is surrounded by the elastic film, the retainer ring, and the head body. The air chamber includes an air supply path for supplying pressurized air to the air chamber. The retainer ring surrounds the outer periphery of the wafer to prevent the wafer from popping out, and presses the polishing surface (surface) of the polishing pad for polishing the wafer to flatten and refine the polishing surface (optimization). Is.
[0004] このようなリテーナリングには、 例えば金属製の第 1 リングとエンジニア リングプラスチック製の第 2リングとを重ね合わせた 2層構造 ( 2ピース構 造) のものがある。 すなわち、 金属製の第 1 リングによってエンジニアリン グプラスチック製の第 2リングを補強し、 リテーナリング全体の剛性を高め たものである。 そして、 2つのリングをポルト締めによって一体化させた ( 組み付けた) リテーナリングと、 接着剤 (接合剤) によって一体化させたリ テーナリングとが知られている。 Such a retainer ring includes, for example, a two-layer structure (a two-piece structure) in which a metal first ring and an engineering plastic second ring are overlapped. In other words, engineering by the first metal ring The second ring made of polyethylene is reinforced to increase the rigidity of the entire retainer ring. A retainer ring in which two rings are integrated (assembled) by tightening with a port is known, and a retainer ring in which two rings are integrated with an adhesive (bonding agent) is known.
[0005] すなわち、 ポルト締めによる 2層構造のリテーナリングでは、 図 7に示す ように、 第 1 リング 1 0 0に複数のポルト挿入穴 1 0 0 aが形成され、 第 2 リング 1 0 1に複数のネジ穴 1 0 1 a (雌ネジ) がポルト揷入穴 1 0 0 aと 同位置に形成されている。 そして、 第 1 リング 1 0 0と第 2リング 1 0 1と を重ね合わせ、 ポル卜 1 0 2を各ポルト揷入穴 1 0 0 aに挿入してネジ穴 1 0 1 aに締め付ける (ねじ込む) ことで、 2つのリング 1 0 0、 1 0 1がー 体化されたものである (例えば、 特許文献 1参照。 ) 。 [0005] That is, in the two-layer retainer ring by port tightening, as shown in FIG. 7, a plurality of port insertion holes 1 0 0 a are formed in the first ring 1 0 0 and the second ring 1 0 1 is A plurality of screw holes 1 0 1 a (female screws) are formed at the same position as the port insertion hole 1 0 0 a. Then, the 1st ring 1 0 0 and the 2nd ring 1 0 1 are overlapped, and the pole 卜 1 0 2 is inserted into each port 揷 insertion hole 1 0 0 a and tightened into the screw hole 1 0 1 a (screwed) Thus, the two rings 100 and 100 are integrated (see, for example, Patent Document 1).
[0006] また、 接着剤による 2層構造のリテーナリングでは、 図 8に示すように、 第 1 リング 1 1 0の下面 1 1 0 aと第 2リング 1 1 1の上面 1 1 1 aとに接 着剤 1 1 2が塗布され、 第 1 リング 1 1 0と第 2リング 1 1 1とを重ね合わ せて圧力を加えることで、 2つのリング 1 1 0、 1 1 1が一体化されたもの である。 なお、 ポルト締めによるリテーナリングの第 1 リング 1 0 0および 、 接着剤によるリテーナリングの第 1 リング 1 1 0には、 保持へッドに装着 するためのネジ穴が複数形成されている。 [0006] In addition, in the retainer ring having a two-layer structure with an adhesive, as shown in FIG. 8, the lower surface 1 1 0 a of the first ring 1 1 0 and the upper surface 1 1 1 a of the second ring 1 1 1 Adhesive 1 1 2 is applied, and the two rings 1 1 0 and 1 1 1 are integrated by applying pressure by overlapping the first ring 1 1 0 and the second ring 1 1 1 It is. Note that a plurality of screw holes for mounting on the holding head are formed in the first ring 100 0 of the retainer ring by port tightening and the first ring 110 of the retainer ring by adhesive.
特許文献 1 :特開 2 0 0 5 _ 3 4 9 5 9号公報 Patent Document 1: Japanese Patent Laid-Open No. 2 0 0 _ 3 4 9 5 9
発明の開示 Disclosure of the invention
発明が解決しょうとする課題 Problems to be solved by the invention
[0007] ところで、 上記のようなポル卜締めによる 2層構造のリテーナリングでは 、 ウェハの研磨に伴う振動や繰り返し応力 (圧縮応力やせん断応力など) な どによってポル卜が緩み、 第 2リングの平坦度およびリテーナリングによる 研磨パッドへの押圧力が不均一となる場合がある。 しかも、 すべてのポルト が均一に緩まないため、 リテーナリングによる押圧力がさらに不均一、 不安 定となる。 また、 第 1 リングと第 2リングとに複数の穴が形成されているた め、 穴の真下の押圧面 (研磨パッドの研磨面を押圧する面で、 第 2リングの 下面) とそれ以外の部位の押圧面とにおける押圧力が異なることになる (押 圧力が不均一となる) 。 さらに、 ポルトの締め付け力のわずかな違いでも、 押圧面の平坦度が変わり、 あるいは第 2リングがたわみ、 押圧力が不均一と なる。 そして、 このように押圧力が不均一となると、 極めて高い精度 (平坦 度など) が要求されるウェハの研磨加工において、 高い精度が得られないこ ととなる。 [0007] By the way, in the retainer ring having a two-layer structure by the above-described por clamping, the porch is loosened by vibrations and repeated stress (compressive stress, shear stress, etc.) associated with wafer polishing, and the second ring The pressing force on the polishing pad due to flatness and retainer ring may be uneven. Moreover, since all the ports do not loosen uniformly, the pressing force due to the retainer ring becomes even more uneven and unstable. In addition, since a plurality of holes are formed in the first ring and the second ring, the pressing surface directly below the hole (the surface that presses the polishing surface of the polishing pad, The pressing force on the lower surface and the pressing surface of the other part will be different (the pressing force will be uneven). Furthermore, even a slight difference in the tightening force of the port will change the flatness of the pressing surface, or the second ring will bend and the pressing force will be uneven. If the pressing force becomes non-uniform in this way, high accuracy cannot be obtained in wafer polishing processing that requires extremely high accuracy (flatness, etc.).
[0008] 一方、 上記のような接着剤による 2層構造のリテーナリングでは、 ウェハ の研磨に伴ってせん断力などがリテーナリングに加わり、 第 1 リングと第 2 リングとが剥がれてしまう場合がある。 このような剥がれは、 第 1 リングと 第 2リングとの間にスラリ (研磨材) や研磨屑などが入り込むことで、 さら に生じやすくなる。 しかも、 接着剤の調合や塗布が完全に均一であることは 困難であるため、 接着剤の調合や塗布の不均一によって、 第 1 リングと第 2 リングとの剥がれがさらに生じやすくなる。 あるいは、 第 1 リングと第 2リ ングとの一体化 (接着) が不安定となる。 [0008] On the other hand, in the retainer ring having a two-layer structure using the adhesive as described above, a shearing force or the like is applied to the retainer ring as the wafer is polished, and the first ring and the second ring may be peeled off. . Such peeling is more likely to occur when slurry (abrasive material) or abrasive debris enters between the first ring and the second ring. In addition, since it is difficult for the adhesive preparation and application to be completely uniform, non-uniformity in the preparation and application of the adhesive makes it more likely that the first ring and the second ring will peel off. Alternatively, the integration (adhesion) of the first ring and the second ring becomes unstable.
[0009] さらに、 本発明者は、 接着剤が溶出する場合があることを発見、 確認した 。 すなわち、 スラリの薬液成分により、 接着剤が化学分解されてしまい、 接 着剤が溶出する場合があることを発見、 確認した。 そして、 このような接着 剤の溶出が生じると、 第 1 リングと第 2リングとが剥がれてしまうとともに 、 溶出した接着剤によってウェハにスクラッチ (かき傷) などが生じてしま ラ。 [0009] Furthermore, the present inventor has discovered and confirmed that the adhesive may be eluted. In other words, we discovered and confirmed that the chemical agent of the slurry could cause the adhesive to be chemically decomposed and the adhesive to elute. When such adhesive elution occurs, the first ring and second ring peel off, and the eluted adhesive causes scratches on the wafer.
[0010] そこで本発明は、 接着剤などを用いずに第 1 リングと第 2リングとの一体 化が強固に維持され、 しかも押圧力が均一な 2層構造のリテーナリングを提 供することを目的とする。 Accordingly, an object of the present invention is to provide a retainer ring having a two-layer structure in which the integration of the first ring and the second ring is firmly maintained without using an adhesive, and the pressing force is uniform. And
課題を解決するための手段 Means for solving the problem
[0011 ] 上記目的を達成するために請求項 1に記載の発明は、 C M P装置の保持へ ッド内に着脱自在に配設され、 環状の第 1 リングと第 2リングとを同心上に 重ね合わせて一体化した 2層構造のリテーナリングであって、 上層に位置す る前記第 1 リングと下層に位置する前記第 2リングとの間に、 前記第 1 リン グおよび前記第 2リングの少なくとも一方が溶解して他方に接合した溶着部 を有することを特徴としている。 [0011] In order to achieve the above object, the invention according to claim 1 is provided so as to be detachable in the holding head of the CMP apparatus, and the annular first ring and the second ring are concentrically stacked. A two-layer retainer ring integrated together, wherein the first ring is interposed between the first ring located in the upper layer and the second ring located in the lower layer. And at least one of the second ring and a welded portion joined to the other.
[0012] 請求項 2に記載の発明は、 請求項 1に記載の 2層構造のリテーナリングに おいて、 前記第 1 リングと前記第 2リングとが上下方向に嵌合して重ね合わ されていることを特徴としている。 [0012] The invention according to claim 2 is the retainer ring having a two-layer structure according to claim 1, wherein the first ring and the second ring are vertically fitted and overlapped with each other. It is characterized by that.
[0013] 請求項 3に記載の発明は、 請求項 1に記載の 2層構造のリテーナリングに おいて、 前記第 1 リングと前記第 2リングとが上下方向に圧入して重ね合わ されていることを特徴としている。 [0013] In the invention according to claim 3, in the retainer ring having a two-layer structure according to claim 1, the first ring and the second ring are press-fitted in a vertical direction and overlapped with each other. It is characterized by.
[0014] 請求項 4に記載の発明は、 請求項 1に記載の 2層構造のリテーナリングに おいて、 溶解しない前記第 1 リングの下面または溶解しない前記第 2リング の上面に、 凹凸が形成されていることを特徴としている。 [0014] In the invention according to claim 4, in the retainer ring having the two-layer structure according to claim 1, unevenness is formed on the lower surface of the first ring that does not melt or the upper surface of the second ring that does not melt. It is characterized by being.
[0015] 請求項 5に記載の発明は、 請求項 1に記載の 2層構造のリテーナリングに おいて、 固定部材が、 前記溶着部を貫通して前記第 1 リングと前記第 2リン グとに挿入されていることを特徴としている。 [0015] The invention according to claim 5 is the retainer ring having a two-layer structure according to claim 1, wherein the fixing member passes through the welded portion and the first ring and the second ring. It is characterized by being inserted into.
発明の効果 The invention's effect
[0016] 請求項 1に記載の発明によれば、 第 1 リングと第 2リングとの間に溶着部 を有しているため、 第 1 リングと第 2リングとの一体化が強固に維持される 。 すなわち、 第 1 リングおよび第 2リングの少なくとも一方が溶解して他方 に接合することで、 第 1 リングと第 2リングとが一体化 (接合) されている ため、 ウェハの研磨に伴う振動や繰り返し応力などがリテーナリングに加わ つたとしても、 接合 (溶着部) が緩むことがなく、 第 1 リングと第 2リング との一体化が強固に維持される。 また、 接着剤などを使用しないため、 接着 剤が劣化、 溶出などして第 1 リングと第 2リングとが剥がれることや、 溶出 した接着剤によってウェハにスクラッチなどが生じることもない。 さらに、 第 1 リングと第 2リングとの一体化が強固に維持されることによってリテー ナリング (第 2リング) の平坦度が維持されるため、 かつ、 ポルト挿入穴や ネジ穴などを設ける必要がないため、 研磨パッドへの押圧力が均一となる。 [0016] According to the invention described in claim 1, since the weld portion is provided between the first ring and the second ring, the integration of the first ring and the second ring is firmly maintained. The That is, since at least one of the first ring and the second ring is melted and joined to the other, the first ring and the second ring are integrated (joined). Even if stress or the like is applied to the retainer ring, the joint (welded part) does not loosen, and the integration of the first ring and the second ring is firmly maintained. In addition, since no adhesive is used, the first ring and the second ring are not peeled off due to deterioration or elution of the adhesive, and scratches do not occur on the wafer due to the eluted adhesive. In addition, the flatness of the retainer ring (second ring) is maintained by maintaining strong integration between the first ring and second ring, and it is also necessary to provide port insertion holes and screw holes. As a result, the pressure applied to the polishing pad is uniform.
[0017] 請求項 2に記載の発明によれば、 第 1 リングと第 2リングとが上下方向に 嵌合されているため、 第 1 リングと第 2リングとの一体化がより強固となり 、 かつ、 ウェハの研磨に伴うせん断力に対して強固に対抗することができる (せん断力によって剥離しない) 。 [0017] According to the invention of claim 2, the first ring and the second ring are arranged in the vertical direction. Since they are fitted, the integration of the first ring and the second ring becomes stronger, and it is possible to strongly counter the shearing force associated with wafer polishing (does not peel off due to the shearing force).
[0018] 請求項 3に記載の発明によれば、 第 1 リングと第 2リングとが上下方向に 圧入されているため、 第 1 リングと第 2リングとの一体化がより強固となり 、 かつ、 ウェハの研磨に伴うせん断力に対して強固に対抗することができる [0018] According to the invention of claim 3, since the first ring and the second ring are press-fitted in the vertical direction, the integration of the first ring and the second ring becomes stronger, and Can strongly resist the shearing force associated with wafer polishing
[0019] 請求項 4に記載の発明によれば、 溶解しない第 1 リングの下面または溶解 しない第 2リングの上面に凹凸が形成されているため、 溶解した第 2リング または溶解した第 1 リングとの接合面積が増すとともに、 接合が立体的 (三 次元的) となる。 この結果、 第 1 リングと第 2リングとの一体化 (接合) が より強固となる。 [0019] According to the invention of claim 4, since irregularities are formed on the lower surface of the first ring that does not melt or the upper surface of the second ring that does not melt, the second ring that is melted or the first ring that is melted As the bonding area increases, the bonding becomes three-dimensional (three-dimensional). As a result, the integration (bonding) of the first ring and the second ring becomes stronger.
[0020] 請求項 5に記載の発明によれば、 固定部材が溶着部を貫通して第 1 リング と第 2リングとに挿入されているため、 第 1 リングと第 2リングとの一体化 がより強固となり、 かつ、 ウェハの研磨に伴うせん断力に対して強固に対抗 することができる。 [0020] According to the invention of claim 5, since the fixing member passes through the welded portion and is inserted into the first ring and the second ring, the first ring and the second ring can be integrated. It is stronger and can counteract the shearing force associated with wafer polishing.
図面の簡単な説明 Brief Description of Drawings
[0021 ] [図 1 ]この発明の実施の形態 1〜3に係る C M P装置の概略構成を示す正面図 である。 FIG. 1 is a front view showing a schematic configuration of a CMP apparatus according to Embodiments 1 to 3 of the present invention.
[図 2]図 1の C M P装置の保持へッドの概略断面図である。 2 is a schematic cross-sectional view of a holding head of the CMP apparatus of FIG.
[図 3]この発明の実施の形態 1に係る 2層構造のリテーナリングの第 1 リング の平面図 (a ) とその A _ A断面図 (b ) である。 FIG. 3A is a plan view of a first ring of a two-layered retainer ring according to Embodiment 1 of the present invention, and FIG.
[図 4]この発明の実施の形態 1に係る 2層構造のリテーナリングの第 2リング の平面図 (a ) とその B _ B断面図 (b ) である。 FIG. 4 is a plan view (a) of a second ring of a two-layered retainer ring according to Embodiment 1 of the present invention and a B_B sectional view (b) thereof.
[図 5]この発明の実施の形態 2に係る 2層構造のリテーナリングの平面図 ( a ) とその C _ C断面図 (b ) である。 FIG. 5 is a plan view (a) of a two-layered retainer ring according to Embodiment 2 of the present invention and a C_C sectional view (b) thereof.
[図 6]この発明の実施の形態 3に係る 2層構造のリテーナリングの平面図 ( a ) とその D _ D断面図 (b ) である。 [図 7]ポルト締めによって第 1 リングと第 2リングとを一体化させた従来の 2 層構造のリテーナリングを示す斜視図 (a ) とその E _ E断面図 (b ) であ る。 FIG. 6 is a plan view (a) of a two-layer structure retainer ring according to Embodiment 3 of the present invention and a D_D sectional view (b) thereof. [FIG. 7] A perspective view (a) showing a conventional two-layer retainer ring in which the first ring and the second ring are integrated by port fastening, and an E_E sectional view (b) thereof.
[図 8]接着剤によって第 1 リングと第 2リングとを一体化させた従来の 2層構 造のリテーナリングを示す斜視図である。 FIG. 8 is a perspective view showing a conventional two-layer structure retainer ring in which a first ring and a second ring are integrated with an adhesive.
符号の説明 Explanation of symbols
1 C M P装置 1 C M P equipment
2 定盤 2 Surface plate
3 研磨パッド 3 Polishing pad
3 a 研磨面 3 a polished surface
4 保持へッド 4 Retention head
5 スラリ供給ノズル 5 Slurry supply nozzle
5 a スラリ 5 a slurry
6 ドレッサー 6 Dresser
7 へッド本体 7 Head body
8 2層構造のリテー 8 Two-layer retainer
9 弾性体膜 9 Elastic membrane
1 0 空気室 1 0 Air chamber
1 1 第 1 リング 1 1 1st ring
1 1 a 上面 1 1 a Top view
1 1 b ネジ穴 1 1 b Screw hole
1 1 c 凹凸 1 1 c uneven
1 2 第 2リング 1 2 Second ring
1 2 a 押圧面 1 2 a Press surface
1 2 b スリット 1 2 b Slit
1 2 c 上面 1 2 c Top view
1 3 溶着部 1 3 Welded part
2 0 2層構造のリテー 2 1 第 1 リング 2 0 2 layer retainer 2 1 1st ring
2 1 a 被嵌合圧入部 2 1 a Mated press-fit part
2 2 第 2リング 2 2 2nd ring
2 2 a 上部 2 2 a top
2 3 溶着部 2 3 weld
3 0 2層構造のリテーナリング 3 0 2-layer retainer ring
3 1 第 1 リング 3 1 1st ring
3 1 a 挿入穴 3 1 a Insertion hole
3 2 第 2リング 3 2 Second ring
3 2 a 挿入穴 3 2 a Insertion hole
3 3 溶着部 3 3 Welded part
3 4 固定ピン (固定部材) 3 4 Fixing pin (fixing member)
W ウェハ W wafer
W 1 被研磨面 W 1 Surface to be polished
W 2 上面 W 2 top surface
発明を実施するための最良の形態 BEST MODE FOR CARRYING OUT THE INVENTION
[0023] 以下、 本発明を図示の実施の形態に基づいて説明する。 Hereinafter, the present invention will be described based on the illustrated embodiments.
[0024] (実施の形態 1 ) [0024] (Embodiment 1)
図 1は、 この実施の形態に係る C M P装置 1の概略構成を示す正面図であ る。 この C M P装置 1は、 後述する 2層構造のリテーナリング 8を除き、 広 く一般に使用されている C M P装置と同等の構成であり、 ここでは詳細な説 明を省略するが、 この実施の形態では、 回転可能な定盤 2と、 この定盤 2の 上に配置された研磨パッド 3 (クロスなど) と、 保持ヘッド 4と、 スラリ供 給ノズル 5およびドレッサー 6 (目立て手段) とを備え、 ウェハ Wを化学機 械的に研磨するものである。 FIG. 1 is a front view showing a schematic configuration of a CMP apparatus 1 according to this embodiment. This CMP apparatus 1 has the same configuration as a widely used CMP apparatus except for a retainer ring 8 having a two-layer structure, which will be described later, and a detailed description is omitted here, but in this embodiment, A rotatable surface plate 2, a polishing pad 3 (such as a cloth) disposed on the surface plate 2, a holding head 4, a slurry supply nozzle 5 and a dresser 6 (shaping means), and a wafer W is chemically and mechanically polished.
[0025] 保持ヘッド 4は、 ウェハ Wを保持してその被研磨面 W 1を研磨パッド 3に 押圧するものであり、 回転 (自転) しならが研磨パッド 3上を移動できるよ うになつている。 この保持ヘッド 4は、 この実施の形態では、 図 2に示すよ うに、 ヘッド本体 7と、 このヘッド本体 7の下部に着脱自在に配設されたリ テーナリング 8と、 このリテーナリング 8内に位置しウェハ Wの上面 W 2を 押圧する弾性体膜 9とを備えている。 そして、 ヘッド本体 7とリテーナリン グ 8と弾性体膜 9とによって囲まれた空気室 1 0に加圧用空気が供給され、 弾性体膜 9を介してウェハ Wを研磨パッド 3に押圧するものである。 [0025] The holding head 4 holds the wafer W and presses the surface to be polished W1 against the polishing pad 3. The holding head 4 can move on the polishing pad 3 if it rotates (rotates). . This holding head 4 is shown in FIG. 2 in this embodiment. The head body 7, a retainer ring 8 that is detachably disposed at the lower portion of the head body 7, and an elastic film 9 that is located in the retainer ring 8 and presses the upper surface W 2 of the wafer W. I have. Then, air for pressurization is supplied to the air chamber 10 surrounded by the head body 7, the retaining ring 8, and the elastic film 9, and the wafer W is pressed against the polishing pad 3 through the elastic film 9. .
[0026] リテーナリング 8は円環形で、 ウェハ Wの外周を囲いウェハ Wが保持へッ ド 4から飛び出すのを防止するとともに、 ウェハ Wの被研磨面 W 1を研磨す る研磨パッド 3の研磨面 3 a (表面) を押圧して、 研磨面 3 aを平坦化、 微 細化 (適正化) するものである。 すなわち、 研磨パッド 3の研磨面 3 aは、 スラリ (研磨材) 5 aによって平面度が低く、 表面粗さが粗くなつておリ、 このような研磨面 3 aをリテーナリング 8によって平面度を高くし、 かつ表 面粗さを小さくするものである。 このリテーナリング 8は、 ステンレス鋼 ( S U S 3 0 4や S U S 3 1 6など) 製の第 1 リング 1 1と、 スーパェンジ二 ァリングプラスチック (P P Sや P E E Kなど) 製の第 2リング 1 2とを厚 み方向に同心上に重ね合わせた 2層構造となっている。 そして、 上層 (へッ ド本体 7側) に位置する第 1 リング 1 1と下層 (研磨パッド 3側) に位置す る第 2リング 1 2との間に、 溶着部 1 3が形成されている (溶着部 1 3を有 している) ものである。 [0026] The retainer ring 8 has an annular shape, surrounds the outer periphery of the wafer W, prevents the wafer W from jumping out of the holding head 4, and polishes the polishing pad 3 for polishing the polished surface W1 of the wafer W. The surface 3 a (surface) is pressed, and the polished surface 3 a is flattened and refined (optimized). That is, the polishing surface 3 a of the polishing pad 3 has a low flatness due to the slurry (abrasive) 5 a and a rough surface, and the polishing surface 3 a has a flatness due to the retainer ring 8. It increases the surface roughness and decreases the surface roughness. This retainer ring 8 consists of a first ring 1 1 made of stainless steel (such as SUS 3 0 4 or SUS 3 1 6) and a second ring 1 2 made of a super-shearing plastic (such as PPS or PEEK). It has a two-layer structure concentrically stacked in the vertical direction. A welded portion 13 is formed between the first ring 11 located on the upper layer (head body 7 side) and the second ring 12 located on the lower layer (polishing pad 3 side). (Has welded part 1 3).
[0027] 第 1 リング 1 1の上面 1 1 aからは、 図 3に示すように、 リテーナリング [0027] From the upper surface 1 1 a of the first ring 1 1, as shown in FIG. 3, the retainer ring
8を保持ヘッド 4に装着するためのネジ穴 1 1 bが複数形成されている。 ま た、 第 1 リング 1 1の下面は、 後述するように、 第 2リング 1 2との一体化 において溶解せず、 その全面にわたって凹凸 1 1 c (ローレット目や波目な ど) が形成されている。 A plurality of screw holes 1 1 b for attaching 8 to the holding head 4 are formed. In addition, as will be described later, the lower surface of the first ring 11 1 does not melt when integrated with the second ring 12, and irregularities 11 c (such as knurled eyes and wave eyes) are formed over the entire surface. ing.
[0028] 第 2リング 1 2の内径および外径は、 第 1 リング 1 1の内径および外径と ほぼ同径で、 研磨パッド 3の研磨面 3 aを押圧する押圧面 1 2 a (下面) に は、 図 4に示すように、 研磨屑を逃がす (排出する) ための溝状のスリット 1 2 bが複数形成されている。 また、 第 1 リング 1 1と一体化する前の上面 1 2 cは、 フラット (平坦) に成形されている。 [0029] 溶着部 1 3は、 第 2リング 1 2の上面 1 2 c側つまリ上部 (一方) が溶解 して第 1 リング 1 1の下面側つまり下部 (他方) に接合した接合部であり、 この溶着部 1 3によって第 1 リング 1 1と第 2リング 1 2とが一体化されて いる。 ここで、 接合とは、 接着、 融着、 融合、 結合などを含む広い概念とす る。 この溶着部 1 3は、 溶着によって形成され、 高周波誘導加熱による高周 波溶着、 外部の熱源からの熱伝導によって加熱する熱溶着 (熱板式溶着、 熱 風式溶着、 インパルス式溶着、 コテ式溶着など) 、 超音波振動による摩擦熱 を利用した超音波溶着、 レーザ照射による発熱を利用したレーザ溶着、 赤外 線照射による発熱を利用した赤外線溶着などの溶着方法のうち、 いずれによ るかは、 第 1 リング 1 1と第 2リング 1 2の材質や形状などに応じて選定さ れる。 また、 溶着部 1 3の第 1 リング 1 1側 (上面側) は、 図 2に示すよう に、 溶解、 凝固 (固化) に伴って凹凸 1 1 cに沿った (倣った) 形状となつ ている。 [0028] The inner diameter and the outer diameter of the second ring 1 2 are substantially the same as the inner diameter and the outer diameter of the first ring 1 1, and a pressing surface 1 2 a (lower surface) that presses the polishing surface 3 a of the polishing pad 3 As shown in FIG. 4, a plurality of groove-like slits 1 2 b are formed for escaping (discharging) polishing debris. Further, the upper surface 1 2 c before being integrated with the first ring 11 1 is formed flat (flat). [0029] The welded part 1 3 is a joined part in which the upper surface 1 2 c side upper part (one side) of the second ring 1 2 is melted and joined to the lower side of the first ring 1 1, that is, the lower part (the other). The first ring 11 and the second ring 12 are integrated by the welded portion 13. Here, bonding is a broad concept including adhesion, fusion, fusion, and bonding. This welded part 1 3 is formed by welding, high frequency welding by high frequency induction heating, heat welding heated by heat conduction from an external heat source (hot plate welding, hot air welding, impulse welding, iron welding Which method is used, such as ultrasonic welding using frictional heat generated by ultrasonic vibration, laser welding using heat generated by laser irradiation, or infrared welding using heat generated by infrared irradiation? The first ring 1 1 and the second ring 1 2 are selected according to the material and shape of the ring. Also, as shown in Fig. 2, the first ring 11 side (upper surface side) of the welded part 13 has a shape that follows (follows) the unevenness 11c as it melts and solidifies (solidifies). Yes.
[0030] 以上のような構成の 2層構造のリテーナリング 8によれば、 第 1 リング 1 [0030] According to the two-layered retainer ring 8 configured as described above, the first ring 1
1と第 2リング 1 2との間に溶着部 1 3が形成されているため、 第 1 リング 1 1と第 2リング 1 2との一体化が強固に維持される。 すなわち、 第 2リン グ 1 2の上面 1 2 c側が溶解して第 1 リング 1 1の下面側に接合することで 、 第 1 リング 1 1と第 2リング 1 2とが一体化 (接合) されているため、 ゥ ェハ Wの研磨に伴う振動や繰リ返し応力などがリテーナリング 8に加わつた としても、 接合 (溶着部 1 3 ) が緩むことがなく、 第 1 リング 1 1と第 2リ ング 1 2との一体化が強固に維持される。 しかも、 第 1 リング 1 1の下面に 凹凸 1 1 cが形成され、 溶着部 1 3の第 1 リング 1 1側が凹凸 1 1 cに沿つ た形状となっているため、 第 1 リング 1 1と第 2リング 1 2との接合面積が 増すとともに、 接合が立体的 (三次元的) となる。 この結果、 第 1 リング 1 1と第 2リング 1 2との一体化 (接合) がより強固となる。 Since the welded portion 13 is formed between the first ring 2 and the second ring 12, the integration of the first ring 1 1 and the second ring 1 2 is firmly maintained. That is, the upper surface 12 c side of the second ring 12 2 is melted and joined to the lower surface side of the first ring 11, so that the first ring 11 and the second ring 12 are integrated (joined). Therefore, even if vibration or repetitive stress accompanying polishing of wafer W is applied to the retainer ring 8, the bonding (welded portion 13) does not loosen, and the first ring 11 and second ring Integration with Ring 1 2 is maintained firmly. Moreover, the unevenness 1 1 c is formed on the lower surface of the first ring 1 1, and the first ring 1 1 side of the welded portion 1 3 is shaped along the unevenness 1 1 c. As the joint area with the second ring 1 2 increases, the joint becomes three-dimensional (three-dimensional). As a result, the integration (joining) of the first ring 1 1 and the second ring 1 2 becomes stronger.
[0031 ] また、 接着剤などを使用しないため、 接着剤が劣化、 溶出などして第 1 リ ング 1 1と第 2リング 1 2とが剥がれることや、 溶出した接着剤によってゥ ェハ Wにスクラッチなどが生じることもない。 さらに、 第 1 リング 1 1と第 2リング 1 2との一体化が強固に維持されることによってリテーナリング 8 (第 2リング 1 2 ) の平坦度が維持されるため、 かつ、 ポルト挿入穴ゃネジ 穴などを設ける必要がないため、 研磨パッド 3への押圧力が均一となる。 [0031] In addition, since no adhesive or the like is used, the first ring 1 1 and the second ring 1 2 may be peeled off due to deterioration or elution of the adhesive, or due to the eluted adhesive, No scratches occur. In addition, the first ring 1 1 and the first Since the flatness of the retainer ring 8 (second ring 1 2) is maintained by maintaining the strong integration with the 2 ring 1 2, it is not necessary to provide a port insertion hole or screw hole. The pressing force to the polishing pad 3 becomes uniform.
[0032] (実施の形態 2 ) [Embodiment 2]
図 5は、 この実施の形態に係る 2層構造のリテーナリング 2 0を示す平面 図 (a ) と、 その C— C断面図 (b ) である。 この実施の形態では、 第 1 リ ング 2 1と第 2リング 2 2とが嵌合、 圧入されている点で、 上記の実施の形 態 1と構成が異なる。 FIG. 5 is a plan view (a) showing a two-layered retainer ring 20 according to this embodiment, and a CC sectional view (b) thereof. In this embodiment, the first ring 21 and the second ring 22 are fitted and press-fitted, and the configuration is different from that of the first embodiment.
[0033] すなわち、 第 1 リング 2 1の下面 (下部) の全周に沿って、 断面が厚み方 向に凹状で円環状 (第 1 リング 2 1と同心円状) の被嵌合圧入部 2 1 aが形 成されている。 この被嵌合圧入部 2 1 aの幅 H 1は、 第 2リング 2 2の幅 H 2よりもやや小さく設定されている。 そして、 第 2リング 2 2の上部 2 2 a が被嵌合圧入部 2 1 aに嵌合、 圧入された状態で、 第 1 リング 2 1と第 2リ ング 2 2とが上下方向 (厚み方向) に嵌合、 圧入して重ね合わされている。 また、 第 2リング 2 2の上部 2 2 aが溶解し第 1 リング 2 1の被嵌合圧入部 2 1 aに接合して、 溶着部 2 3が形成されており、 この溶着部 2 3によって 第 1 リング 2 1と第 2リング 2 2とが一体化されている。 [0033] That is, along the entire circumference of the lower surface (lower part) of the first ring 21, the fitted press-fit part 2 1 having a circular section (concentric with the first ring 21) having a concave cross section in the thickness direction. a is formed. The width H 1 of the fitted press-fit portion 2 1 a is set to be slightly smaller than the width H 2 of the second ring 2 2. Then, with the upper part 2 2 a of the second ring 2 2 fitted and press-fitted into the fitting press-fit part 21 a, the first ring 21 and the second ring 22 are in the vertical direction (thickness direction). ) Are fitted and press-fitted to overlap. Further, the upper part 2 2 a of the second ring 2 2 is melted and joined to the fitted press-fitted part 2 1 a of the first ring 21, thereby forming a welded part 2 3. The first ring 2 1 and the second ring 2 2 are integrated.
[0034] 以上のような構成の 2層構造のリテーナリング 2 0によれば、 第 1 リング [0034] According to the two-layered retainer ring 20 configured as described above, the first ring
2 1の被嵌合圧入部 2 1 aに第 2リング 2 2の上部 2 2 aが嵌合され、 かつ 圧入されているため、 第 1 リング 2 1と第 2リング 2 2との一体化がより強 固となる。 しかも、 ウェハ Wの研磨に伴うせん断力 (図中水平方向の力) が 第 2リング 2 2に加わっても、 そのせん断力が被嵌合圧入部 2 1 aの側壁 ( 凹部の両サイド) によって受けられる (せん断力が良好に第 1 リング 3 1に 伝わる) 。 このため、 せん断力に対して強固に対抗することができ、 せん断 力によって第 1 リング 2 1と第 2リング 2 2とが剥離することがない。 2 Since the upper part 2 2 a of the second ring 2 2 is fitted and press-fitted into the fitted press-fit part 2 1 a, the first ring 2 1 and the second ring 2 2 can be integrated. It becomes stronger. Moreover, even if the shearing force (horizontal force in the figure) accompanying the polishing of the wafer W is applied to the second ring 22, the shearing force is applied by the side walls (both sides of the recess) of the fitted press-fit portion 2 1 a. Received (shearing force is well transmitted to the first ring 3 1). Therefore, it is possible to strongly counter the shearing force, and the first ring 21 and the second ring 22 are not separated by the shearing force.
[0035] (実施の形態 3 ) [0035] (Embodiment 3)
図 6は、 この実施の形態に係る 2層構造のリテーナリング 3 0を示す平面 図 (a ) と、 その D— D断面図 (b ) である。 この実施の形態では、 第 1 リ ング 3 1と第 2リング 3 2とに、 複数の固定ピン 3 4 (固定部材) が挿入さ れている点で、 上記の実施の形態 1と構成が異なる。 FIG. 6 is a plan view (a) showing a two-layer structure retainer ring 30 according to this embodiment and a DD cross-sectional view (b) thereof. In this embodiment, the first The first embodiment is different from the first embodiment in that a plurality of fixing pins 3 4 (fixing members) are inserted into the ring 3 1 and the second ring 3 2.
[0036] すなわち、 第 1 リング 3 1の下面から複数の挿入穴 3 1 aが形成され、 こ の揷入穴 3 1 aと同位置に、 第 2リング 3 2の上面から複数の揷入穴 3 2 a が形成されている。 ここで、 揷入穴 3 1 a、 3 2 aの内径は、 固定ピン 3 4 の外径と同寸法であり、 固定ピン 3 4が揷入穴 3 1 a、 3 2 aに静合する ( 隙間なく嵌め合う) ようになつている。 また、 固定ピン 3 4は、 ステンレス 鋼製の丸棒体である。 That is, a plurality of insertion holes 3 1 a are formed from the lower surface of the first ring 3 1, and a plurality of insertion holes are formed from the upper surface of the second ring 3 2 at the same position as the insertion holes 3 1 a. 3 2 a is formed. Here, the inner diameters of the insertion holes 3 1 a and 3 2 a are the same as the outer diameter of the fixing pins 3 4, and the fixing pins 3 4 are fitted into the insertion holes 3 1 a and 3 2 a ( It fits without gaps). The fixing pin 3 4 is a round bar made of stainless steel.
[0037] そして、 第 1 リング 3 1と第 2リング 3 2との境、 つまり後述する溶着部 [0037] Then, the boundary between the first ring 3 1 and the second ring 3 2, that is, a welded portion described later.
3 3を貫通して、 固定ピン 3 4が第 1 リング 3 1の揷入穴 3 1 aと第 2リン グ 3 2の揷入穴 3 2 aとに挿入されている。 また、 第 2リング 3 2の上部が 溶解し第 1 リング 3 1の下部に接合して、 溶着部 3 3が形成されており、 こ の溶着部 3 3によって第 1 リング 3 1と第 2リング 3 2とが一体化されてい る。 Through 3 3, the fixing pin 3 4 is inserted into the insertion hole 3 1 a of the first ring 3 1 and the insertion hole 3 2 a of the second ring 3 2. In addition, the upper part of the second ring 3 2 is melted and joined to the lower part of the first ring 3 1 to form a welded part 33, and the welded part 3 3 forms the first ring 31 and the second ring. 3 2 is integrated.
[0038] 以上のような構成の 2層構造のリテーナリング 3 0によれば、 固定ピン 3 4が溶着部 3 3を貫通して第 1 リング 3 1と第 2リング 3 2とに挿入されて いるため、 第 1 リング 3 1と第 2リング 3 2との一体化がより強固となる。 しかも、 ウェハ Wの研磨に伴うせん断力が第 2リング 3 2に加わっても、 そ のせん断力が固定ピン 3 4を介して良好に第 1 リング 3 1に伝わる。 このた め、 せん断力に対して強固に対抗することができ、 せん断力によって第 1 リ ング 3 1と第 2リング 3 2とが剥離することがない。 [0038] According to the two-layer structure retainer ring 30 configured as described above, the fixing pin 3 4 penetrates the welded portion 3 3 and is inserted into the first ring 3 1 and the second ring 3 2. Therefore, the integration of the first ring 3 1 and the second ring 3 2 becomes stronger. In addition, even if the shearing force accompanying the polishing of the wafer W is applied to the second ring 3 2, the shearing force is well transmitted to the first ring 3 1 through the fixing pins 3 4. For this reason, it is possible to strongly counter the shearing force, and the first ring 31 and the second ring 32 are not separated by the shearing force.
[0039] 以上、 この発明の実施の形態 1〜3について説明したが、 具体的な構成は 、 これらの実施の形態に限られるものではなく、 この発明の要旨を逸脱しな い範囲の設計の変更等があっても、 この発明に含まれる。 例えば、 実施の形 態 1〜3では、 下層に位置する第 2リングが溶解し、 上層に位置する第 1 リ ングに接合して溶着部が形成されているが、 第 1 リングと第 2リングの材質 や形状などに応じて、 第 1 リングが溶解して溶着部を形成するようにしても よく、 あるいは、 第 1 リングと第 2リングとがともに溶解して溶着部を形成 するようにしてもよい。 従って、 第 1 リングのみが溶解する場合において、 溶解しない第 2リングの上面に、 上記のような凹凸 (凹凸 1 1 C ) を形成す るようにしてもよい。 また、 実施の形態 1〜3では、 第 1 リングがステンレ ス鋼製で、 第 2リングがスーパエンジニアリングプラスチック製であるが、 第 1 リングを他の金属やセラミック、 あるいは樹脂材などで構成し、 第 2リ ングを他の樹脂材などで構成してもよいことは勿論である。 [0039] While the first to third embodiments of the present invention have been described above, the specific configuration is not limited to these embodiments, and the design is within a range not departing from the gist of the present invention. Any changes are included in the present invention. For example, in Embodiments 1 to 3, the second ring located in the lower layer is melted and joined to the first ring located in the upper layer to form a welded portion. However, the first ring and the second ring are formed. Depending on the material and shape, the first ring may be melted to form the welded portion, or the first ring and the second ring are melted together to form the welded portion. You may make it do. Therefore, when only the first ring is melted, the unevenness (unevenness 11 C) as described above may be formed on the upper surface of the second ring that does not melt. In the first to third embodiments, the first ring is made of stainless steel and the second ring is made of super engineering plastic, but the first ring is made of another metal, ceramic, or resin material, Of course, the second ring may be made of other resin materials.
Claims
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006195103A JP2008023603A (en) | 2006-07-18 | 2006-07-18 | Retainer ring of two-layer structure |
| JP2006-195103 | 2006-07-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2008010310A1 true WO2008010310A1 (en) | 2008-01-24 |
Family
ID=38956645
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2007/000609 Ceased WO2008010310A1 (en) | 2006-07-18 | 2007-06-06 | Retainer ring of double-layer structure |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2008023603A (en) |
| TW (1) | TW200806427A (en) |
| WO (1) | WO2008010310A1 (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5199691B2 (en) * | 2008-02-13 | 2013-05-15 | 株式会社荏原製作所 | Polishing equipment |
| KR100884236B1 (en) | 2008-05-27 | 2009-02-17 | (주)아이에스테크노 | Retainer Ring for Wafer Polishing |
| JP5386874B2 (en) * | 2008-07-31 | 2014-01-15 | 株式会社Sumco | Semiconductor wafer peripheral polishing apparatus and method |
| KR101083552B1 (en) | 2011-08-26 | 2011-11-14 | 한상효 | Retainer Ring for Wafer Polishing |
| US8998676B2 (en) * | 2012-10-26 | 2015-04-07 | Applied Materials, Inc. | Retaining ring with selected stiffness and thickness |
| JP6403981B2 (en) * | 2013-11-13 | 2018-10-10 | 株式会社荏原製作所 | Substrate holding device, polishing device, polishing method, and retainer ring |
| KR101875275B1 (en) * | 2016-07-19 | 2018-07-05 | 최환혁 | Retainer ring recycle method using friction welding |
| JP7219009B2 (en) * | 2018-03-27 | 2023-02-07 | 株式会社荏原製作所 | SUBSTRATE HOLDING DEVICE AND DRIVE RING MANUFACTURING METHOD |
| KR102334683B1 (en) * | 2019-12-11 | 2021-12-06 | 주식회사 티이엠 | Polishing head supporter and method of manufacturing the supporter |
| US11565367B2 (en) * | 2020-07-09 | 2023-01-31 | Applied Materials, Inc. | Retaining ring |
| KR102518222B1 (en) * | 2020-12-24 | 2023-04-05 | 주식회사 에스엠티 | Retainer ring, method of manufacturing the same and cmp apparatus including the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11291162A (en) * | 1998-04-10 | 1999-10-26 | Nec Corp | Polishing device |
| JP2003048155A (en) * | 2001-08-03 | 2003-02-18 | Clariant (Japan) Kk | Wafer holding ring for chemical and mechanical polishing device |
| JP2005034959A (en) * | 2003-07-16 | 2005-02-10 | Ebara Corp | Polishing device and retainer ring |
-
2006
- 2006-07-18 JP JP2006195103A patent/JP2008023603A/en active Pending
-
2007
- 2007-06-06 WO PCT/JP2007/000609 patent/WO2008010310A1/en not_active Ceased
- 2007-06-14 TW TW96121592A patent/TW200806427A/en unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11291162A (en) * | 1998-04-10 | 1999-10-26 | Nec Corp | Polishing device |
| JP2003048155A (en) * | 2001-08-03 | 2003-02-18 | Clariant (Japan) Kk | Wafer holding ring for chemical and mechanical polishing device |
| JP2005034959A (en) * | 2003-07-16 | 2005-02-10 | Ebara Corp | Polishing device and retainer ring |
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| Publication number | Publication date |
|---|---|
| TW200806427A (en) | 2008-02-01 |
| JP2008023603A (en) | 2008-02-07 |
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