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WO2008005773A3 - outil multiposte pour un traitement frontal avancé - Google Patents

outil multiposte pour un traitement frontal avancé Download PDF

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Publication number
WO2008005773A3
WO2008005773A3 PCT/US2007/072264 US2007072264W WO2008005773A3 WO 2008005773 A3 WO2008005773 A3 WO 2008005773A3 US 2007072264 W US2007072264 W US 2007072264W WO 2008005773 A3 WO2008005773 A3 WO 2008005773A3
Authority
WO
WIPO (PCT)
Prior art keywords
utilized
generally provide
end processing
cluster tool
reduce
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2007/072264
Other languages
English (en)
Other versions
WO2008005773A2 (fr
Inventor
Randhir Thakur
Arkadii Samoilov
Per-Ove Hansson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/460,864 external-priority patent/US20070134821A1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to EP07812383A priority Critical patent/EP2041774A2/fr
Priority to JP2009518542A priority patent/JP2009543355A/ja
Publication of WO2008005773A2 publication Critical patent/WO2008005773A2/fr
Publication of WO2008005773A3 publication Critical patent/WO2008005773A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

L'invention concerne un appareil et un procédé pour traiter des substrats à l'aide d'un système de traitement à chambres multiples qui est adapté pour traiter des substrats et analyser les résultats des processus réalisés sur le substrat. Dans un aspect de l'invention, une ou plusieurs étapes d'analyse et/ou étapes de pré-nettoyage sont utilisées pour réduire l'effet du temps d'attente sur le rendement du dispositif. Dans un aspect de l'invention, un dispositif de commande de système et ladite ou lesdites chambres d'analyse sont utilisés pour surveiller et commander une recette de chambre de processus et/ou une séquence de processus afin de réduire les débris de substrat dûs à des défauts dans le dispositif formé et les problèmes de variabilité de performance du dispositif. Des modes de réalisation de la présente invention concernent aussi généralement des procédés et un système pour former de manière répétitive et fiable des dispositifs à semi-conducteurs utilisés dans un grand nombre d'applications.
PCT/US2007/072264 2006-07-03 2007-06-27 outil multiposte pour un traitement frontal avancé Ceased WO2008005773A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP07812383A EP2041774A2 (fr) 2006-07-03 2007-06-27 Outil multiposte pour un traitement frontal avance
JP2009518542A JP2009543355A (ja) 2006-07-03 2007-06-27 進歩型フロントエンド処理のためのクラスターツール

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US80651806P 2006-07-03 2006-07-03
US60/806,518 2006-07-03
US11/460,864 2006-07-28
US11/460,864 US20070134821A1 (en) 2004-11-22 2006-07-28 Cluster tool for advanced front-end processing

Publications (2)

Publication Number Publication Date
WO2008005773A2 WO2008005773A2 (fr) 2008-01-10
WO2008005773A3 true WO2008005773A3 (fr) 2008-02-28

Family

ID=38895329

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/072264 Ceased WO2008005773A2 (fr) 2006-07-03 2007-06-27 outil multiposte pour un traitement frontal avancé

Country Status (5)

Country Link
EP (1) EP2041774A2 (fr)
JP (1) JP2009543355A (fr)
KR (1) KR20090035578A (fr)
TW (1) TW200811916A (fr)
WO (1) WO2008005773A2 (fr)

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US8022372B2 (en) 2008-02-15 2011-09-20 Veeco Instruments Inc. Apparatus and method for batch non-contact material characterization
US7838431B2 (en) * 2008-06-14 2010-11-23 Applied Materials, Inc. Method for surface treatment of semiconductor substrates
US7964858B2 (en) 2008-10-21 2011-06-21 Applied Materials, Inc. Ultraviolet reflector with coolant gas holes and method
US20120118227A1 (en) * 2009-08-13 2012-05-17 Kim Nam Jin Apparatus for forming layer
US8999798B2 (en) 2009-12-17 2015-04-07 Applied Materials, Inc. Methods for forming NMOS EPI layers
US9076827B2 (en) * 2010-09-14 2015-07-07 Applied Materials, Inc. Transfer chamber metrology for improved device yield
TWI525744B (zh) 2011-05-31 2016-03-11 維克儀器公司 加熱之晶圓載體輪廓勘測
JP6272850B2 (ja) * 2012-07-02 2018-01-31 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 物理的気相成長法による窒化アルミニウムの緩衝及び活性層
KR102374689B1 (ko) * 2012-08-08 2022-03-14 어플라이드 머티어리얼스, 인코포레이티드 링크된 진공 프로세싱 툴들 및 그 사용 방법들
KR101463984B1 (ko) * 2013-02-15 2014-11-26 최대규 플라즈마 처리 시스템
US9627608B2 (en) * 2014-09-11 2017-04-18 Lam Research Corporation Dielectric repair for emerging memory devices
US9624578B2 (en) * 2014-09-30 2017-04-18 Lam Research Corporation Method for RF compensation in plasma assisted atomic layer deposition
US20160240405A1 (en) * 2015-02-12 2016-08-18 Applied Materials, Inc. Stand alone anneal system for semiconductor wafers
TWI677046B (zh) 2015-04-23 2019-11-11 美商應用材料股份有限公司 半導體處理系統中的外部基板材旋轉
US10879177B2 (en) * 2015-06-19 2020-12-29 Applied Materials, Inc. PVD deposition and anneal of multi-layer metal-dielectric film
WO2017073396A1 (fr) * 2015-10-28 2017-05-04 東京エレクトロン株式会社 Procédé de traitement de substrat, appareil de traitement de substrat, système de traitement de substrat et support de stockage
JP6938491B2 (ja) * 2015-11-13 2021-09-22 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ， Ｉｎｃ． 半導体デバイスの処理方法並びに半導体デバイスの処理システムおよび装置
KR20190041030A (ko) 2016-09-15 2019-04-19 어플라이드 머티어리얼스, 인코포레이티드 반도체 프로세스를 위한 통합 시스템
TWI700750B (zh) * 2017-01-24 2020-08-01 美商應用材料股份有限公司 用於介電薄膜的選擇性沉積之方法及設備
JP7158133B2 (ja) * 2017-03-03 2022-10-21 アプライド マテリアルズ インコーポレイテッド 雰囲気が制御された移送モジュール及び処理システム
KR102238745B1 (ko) 2017-04-28 2021-04-08 어플라이드 머티어리얼스, 인코포레이티드 Oled 디바이스들의 제조에서 사용되는 진공 시스템을 세정하기 위한 방법, oled 디바이스들을 제조하기 위한 기판 상의 진공 증착을 위한 방법, 및 oled 디바이스들을 제조하기 위한 기판 상의 진공 증착을 위한 장치
US10697059B2 (en) 2017-09-15 2020-06-30 Lam Research Corporation Thickness compensation by modulation of number of deposition cycles as a function of chamber accumulation for wafer to wafer film thickness matching
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WO2019182916A1 (fr) * 2018-03-20 2019-09-26 Tokyo Electron Limited Outil de traitement de substrat à métrologie intégré et procédé d'utilisation
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CN112074940A (zh) * 2018-03-20 2020-12-11 东京毅力科创株式会社 结合有集成半导体加工模块的自感知校正异构平台及其使用方法
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JP7206961B2 (ja) * 2019-01-30 2023-01-18 日立金属株式会社 半導体製造装置の管理システム及びその方法
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WO2022186775A1 (fr) * 2021-03-02 2022-09-09 Agency For Science, Technology And Research Chambre de préparation permettant de nettoyer et de réparer une surface de saphir pour la croissance épitaxiale de matériaux composites
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JP7485729B2 (ja) * 2021-07-07 2024-05-16 アプライド マテリアルズ インコーポレイテッド エピタキシャル成長のための統合湿式洗浄
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WO2023033947A1 (fr) * 2021-09-03 2023-03-09 Applied Materials, Inc. Outils en grappe, systèmes et procédés présentant une ou plusieurs chambres de stabilisation de pression
KR102418534B1 (ko) * 2021-10-12 2022-07-07 주식회사 바코솔루션 반도체 기판의 처리를 위한 클러스터 툴 및 그 제어 방법
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US20060021702A1 (en) * 2004-07-29 2006-02-02 Ajay Kumar Cluster tool and method for process integration in manufacture of a gate structure of a field effect transistor

Also Published As

Publication number Publication date
EP2041774A2 (fr) 2009-04-01
WO2008005773A2 (fr) 2008-01-10
KR20090035578A (ko) 2009-04-09
TW200811916A (en) 2008-03-01
JP2009543355A (ja) 2009-12-03

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