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WO2008099526A1 - Thin film transistor, and display device - Google Patents

Thin film transistor, and display device Download PDF

Info

Publication number
WO2008099526A1
WO2008099526A1 PCT/JP2007/067050 JP2007067050W WO2008099526A1 WO 2008099526 A1 WO2008099526 A1 WO 2008099526A1 JP 2007067050 W JP2007067050 W JP 2007067050W WO 2008099526 A1 WO2008099526 A1 WO 2008099526A1
Authority
WO
WIPO (PCT)
Prior art keywords
region
thin film
film transistor
display device
crystal growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/067050
Other languages
French (fr)
Japanese (ja)
Inventor
Takashi Okada
Genshiro Kawachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced LCD Technologies Development Center Co Ltd
Original Assignee
Advanced LCD Technologies Development Center Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007221417A external-priority patent/JP2008227445A/en
Application filed by Advanced LCD Technologies Development Center Co Ltd filed Critical Advanced LCD Technologies Development Center Co Ltd
Publication of WO2008099526A1 publication Critical patent/WO2008099526A1/en
Priority to US12/252,910 priority Critical patent/US20090057764A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters

Landscapes

  • Thin Film Transistor (AREA)

Abstract

Provided is a thin film transistor (11) comprising a crystal growth region having crystal-grown in two-dimensional directions on a plane, a source region (S) and a drain region (D) formed in the crystal growth region, and a gate electrode (G) formed through a gate insulating film over a channel region between the source region and the drain region. The thin film transistor is characterized in that the side end portion (E) of the channel region of the source region or the drain region is positioned at the position of 1 μm to 3.5 μm from a crystal growth starting position.
PCT/JP2007/067050 2007-02-16 2007-08-31 Thin film transistor, and display device Ceased WO2008099526A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/252,910 US20090057764A1 (en) 2007-02-16 2008-10-16 Thin film transistor and display apparatus

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-037029 2007-02-16
JP2007037029 2007-02-16
JP2007221417A JP2008227445A (en) 2007-02-16 2007-08-28 Thin film transistor and display device
JP2007-221417 2007-08-28

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/252,910 Continuation US20090057764A1 (en) 2007-02-16 2008-10-16 Thin film transistor and display apparatus

Publications (1)

Publication Number Publication Date
WO2008099526A1 true WO2008099526A1 (en) 2008-08-21

Family

ID=39689783

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/067050 Ceased WO2008099526A1 (en) 2007-02-16 2007-08-31 Thin film transistor, and display device

Country Status (1)

Country Link
WO (1) WO2008099526A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8009345B2 (en) 2007-03-23 2011-08-30 Advanced Lcd Technologies Development Center Co., Ltd. Crystallization apparatus, crystallization method, device, and light modulation element

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004266063A (en) * 2003-02-28 2004-09-24 Seiko Epson Corp Complementary thin film transistor circuit, electro-optical device, electronic equipment
JP2005235811A (en) * 2004-02-17 2005-09-02 Nikon Corp Semiconductor thin film forming equipment

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004266063A (en) * 2003-02-28 2004-09-24 Seiko Epson Corp Complementary thin film transistor circuit, electro-optical device, electronic equipment
JP2005235811A (en) * 2004-02-17 2005-09-02 Nikon Corp Semiconductor thin film forming equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8009345B2 (en) 2007-03-23 2011-08-30 Advanced Lcd Technologies Development Center Co., Ltd. Crystallization apparatus, crystallization method, device, and light modulation element

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