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WO2008092378A1 - Diode électroluminescente - Google Patents

Diode électroluminescente Download PDF

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Publication number
WO2008092378A1
WO2008092378A1 PCT/CN2008/000178 CN2008000178W WO2008092378A1 WO 2008092378 A1 WO2008092378 A1 WO 2008092378A1 CN 2008000178 W CN2008000178 W CN 2008000178W WO 2008092378 A1 WO2008092378 A1 WO 2008092378A1
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WO
WIPO (PCT)
Prior art keywords
layer
current
transfer substrate
light
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2008/000178
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English (en)
Chinese (zh)
Inventor
Guangdi Shen
Yixin Chen
Jianjun Li
Wenjing Jiang
Jinru Han
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing University of Technology
Original Assignee
Beijing University of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing University of Technology filed Critical Beijing University of Technology
Publication of WO2008092378A1 publication Critical patent/WO2008092378A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates

Definitions

  • the present invention relates to a light emitting diode (LED), and more particularly to a novel light-transmitting diode for a current transport antireflection window layer and a highly reflective pattern transfer substrate, and belongs to the field of semiconductor optoelectronic technology.
  • LED light emitting diode
  • the structure is as shown in FIG. 1, and includes, in order from the top, the upper electrode 100, the current spreading layer 200, the upper confinement layer 300, the active region 500, the lower confinement layer 400, the buffer layer 600, and the lining. Bottom 700 and lower electrode 800.
  • the main reason for the low external quantum efficiency is: First, the absorption substrate of a GaAs-based LED has a strong absorption of light generated by the active region, and the absorbed photons eventually exist in the form of heat; secondly, the LED body The refractive index of the material is much larger than the refractive index of the air. According to Hill's law, the total reflection causes the photons emitted to the interface to be emitted into the body only within the critical angle. Finally, the current density directly under the upper electrode is large, and the portion The light generated by the current can not only be emitted to the outside of the body, but instead becomes hot in the body due to the blocking or absorption of the electrode.
  • the distributed Bragg (DBR) reflective layer 900 has a good reflection effect on photons with an incident angle close to 0 degrees.
  • the structure of the device is shown in Figure 2.
  • the method is to make an anti-reflection film 120 on the light-emitting surface of the LED, and the external quantum efficiency of the device can be increased by about 30 to 40%, as shown in Fig.
  • a method of fabricating the current blocking layer 110 has been proposed, such as: ion implantation, pn junction secondary epitaxy, etc., effectively increasing the current spreading around the electrode, but the process is complicated and the cost is high, and the device structure is as shown in FIG. Figures 2, 3, and 4 These devices solve only one problem of ordinary LEDs in a single or partial way. The light extraction efficiency is still not high, and even the process is complicated. The application of LEDs is limited.
  • the object of the present invention is to provide a light-emitting diode with a current transporting antireflection window layer and a highly reflective pattern transfer substrate structure, so as to achieve the three problems of solving the above conventional LED, thereby realizing high-efficiency, high-brightness LED. Glowing.
  • the current carrying antireflection window layer and the high reflection pattern transfer substrate structure light emitting diode of the present invention respectively comprise an upper electrode 100 longitudinally grown from top to bottom, a current transport antireflection window layer 111, an upper confinement layer 300, The active region 500, the lower confinement layer 400, the support 112, and the lower electrode 800, wherein the current transport antireflection window layer 111 is composed of a conductive anti-reflection layer 130, a current blocking layer 110, and a current spreading layer 201.
  • the composition of the bracket 112 viewed from top to bottom is: a patterned current spreading layer 202, a conductive high light reflecting layer 140, a conductive bonding layer 150 and a transfer substrate 160, see FIG.
  • the current transmitting antireflection window layer and the high reflection pattern transfer substrate structure are characterized in that the current blocking layer 110, the current spreading layer 201 and the conductive antireflection layer 130 together constitute a current transport antireflection window layer 111. , its existence, even if the current injected by the upper electrode is laterally transported to the active region outside the electrode, there is no current under the electrode, no light, which increases the luminous efficiency, reduces the heat generation, and generates the active region.
  • the light acts to enhance the penetration of the photons generated in the body to the outside of the body; the current spreading layer 200, the patterned current spreading layer 202, the transfer substrate 160, the patterned transfer substrate 161, and the conductive bonding layer 150 and the conductive high-reflection layer 140 bring two outstanding functions: First, the light emitted from the active region to the substrate direction is well reflected and the photon propagation direction is changed, thereby The photon can be emitted from the upper electrode direction to the outside of the body. Second, the transfer substrate 160 or the patterned transfer substrate 161 has excellent thermal conductivity, rapidly diffuses heat generated in the body, and improves the thermal performance and lifetime of the device. reliability.
  • a structure capable of enhancing the light energy can be introduced on or in the current transport antireflection window layer 111, for example, an antireflection film, a surface roughening, or the like.
  • the material for conducting the light-transmitting light-emitting layer 130 is a material which is both conductive and capable of penetrating light, for example, indium tin oxide ( ⁇ ?), a conductive resin or the like.
  • the material of the current blocking layer 110 in the present invention is an intrinsic semiconductor or a non-conductive resin or an insulating material such as amorphous Si, Si x N y and Si x O y , or a conductive material having an opposite conductivity to the upper electrode.
  • the current blocking layer 110 is formed inside the current spreading layer 201, see Fig. 7; or above, see Fig. 6; or below, see Fig. 8, Fig. 9.
  • the active region 500 is structured as a pn junction, or a pin junction, or a double heterostructure, or a single quantum well structure, or a multiple quantum well structure, a superlattice structure or a quantum dot light emitting structure, or a multilayer quantum dot structure. , or a combination of the above.
  • the conductive high light reflecting layer 140 is composed of a material which is both electrically conductive and reflective, such as metal.
  • the conductive bonding layer 150 is electrically conductive and can perform a good bonding, and the material thereof is a conductive adhesive or a metal.
  • the transfer substrate 160 or the patterned transfer substrate 161 in the present invention is a metal or semiconductor thermal conductive material such as -Si, Cu, Al, or the like.
  • a patterned current spreading layer 201 or a patterned transfer substrate 161 may be employed to form an excellent retroreflective structure to increase light output.
  • the patterned current spreading layer 201 and the patterned transfer substrate 161 in the present invention are planar or rugged regular or irregular surfaces.
  • the current transporting antireflection window layer and the high reflection pattern transfer substrate structure of the LED of the present invention have some important advantages compared with the conventional LED device structure (as shown in FIG. 1), and are manifested in - 1. Extraction efficiency and high optical power output
  • the current blocking layer 110, the current spreading layer 201, and the conductive anti-reflecting light layer 130 are combined to form a current transporting anti-transparent window layer 111, which causes the injection current not to flow under the upper electrode 100, and the lateral transport is below the window layer.
  • the source region 500 radiates a composite luminescence.
  • the refractive index of the material of the conductive anti-reflecting light-emitting layer 130 is between the air and the body material, which increases the light-emitting angle, and is more favorable for the emission of photons emitted to the interface to the outside of the body, which may facilitate the addition of the anti-reflection film or the surface roughening structure, further increasing The light extraction efficiency; the patterned current spreading layer 202 or the patterned transfer substrate 161 is combined with the conductive high reflection layer 140 to function as an excellent mirror and to change the direction of photon propagation, so that the photons emitted downward After one or several reflections of the two layers of material, the direction of light exiting is changed, and eventually most of the photons are emitted from the current transporting antireflection window layer 111 to the outside of the body.
  • This structure greatly increases the light extraction efficiency of the LED, thereby increasing the output optical power at the same injection current.
  • the current injected from the upper electrode 100 cannot be vertically moved downward due to being blocked by the lower current blocking layer 110, and can only be laterally transported through the current spreading layer 201 and the conductive anti-reflecting light layer 130, and the current naturally flows directly below the electrode.
  • the active area other than the electrode there is no current directly under the electrode. Due to the high current density directly under the upper electrode in the conventional LED, a large number of photons generated by this part of the current can not be emitted to the outside of the body, but due to the shielding, reflection and absorption of the upper electrode. Or absorbed in the body, and finally become hot in the body, heat, heat, limit the performance of the device and the application of LED.
  • the current transporting the antireflection window layer and the high reflection pattern transfer substrate of the light emitting diode greatly reduce the loss of the injection current in the body and the generation of ineffective photons, and also reduce the generation of heat, on the other hand, transferring the substrate 160 or the pattern
  • the transfer substrate 161 is an excellent thermal conductor, which can quickly dissipate heat generated in the body, is more conducive to the illumination of the LED, and also ensures the thermal characteristics and reliability of the device.
  • the diameter of the LED electrode is 80-1 ⁇ . Therefore, as the size of the device decreases, the ratio of the current under the electrode (which generates ineffective photons and heat generation) to the total injection current increases, and the light extraction efficiency and optical power output decrease. Under the same injection current, the current transporting the antireflection window layer and the light-emitting diode of the ⁇ -reflecting pattern transfer substrate have high light extraction efficiency and high optical power output, and almost no current under the electrode and invalid photons generated in the body heat, so The output characteristics of the device are wireless with the size of the device. In small device sizes, high light extraction efficiency and optical power output can be achieved, while reducing current loss and heat generation under the electrode. Has excellent thermal properties and reliability.
  • FIG. 1 Schematic diagram of the conventional structure LED
  • Figure 2 Schematic diagram of the device structure after introducing the DBR reflective layer on the basis of the conventional structure LED
  • Figure 3 Schematic diagram of a device structure incorporating an AR coating on a conventional LED structure
  • Figure 4 Schematic diagram of the LED structure after the current blocking layer 110 is introduced above the upper confinement layer 300 and below the upper current spreading layer 200
  • Fig. 5 is a schematic view showing the structure of an epitaxial wafer of a light-transmission diode of a current transporting antireflection window layer and a highly reflective pattern transfer substrate.
  • Fig. 6 Light-emitting diode structure of a current transport antireflection window layer and a highly reflective pattern transfer substrate in the present invention Schematic (current blocking layer 110 is located above current spreading layer 201)
  • Fig. 7 is a schematic view showing the structure of a light-transmitting diode of a current transporting antireflection window layer and a highly reflective pattern transfer substrate in the present invention (the current blocking layer 110 is located inside the current spreading layer 201)
  • Figure 8 is a schematic view showing the structure of a light-emitting diode of a current transport antireflection window layer and a highly reflective pattern transfer substrate in the present invention (the current blocking layer 110 is located below the current expansion layer 201)
  • Figure 9 is a schematic diagram of the structure of a light-emitting diode of a current transport antireflection window layer and a highly reflective pattern transfer substrate in the present invention (using a patterned transfer substrate 161)
  • 100 is the upper electrode
  • 110 is the current blocking layer
  • 130 is the conductive anti-reflecting light layer
  • 201 is the current spreading layer
  • 300 is the upper limiting layer
  • 500 is the active area
  • 400 is the lower limiting layer
  • 202 is the graphic
  • 140 is a conductive high light reflecting layer
  • 150 is a conductive bonding layer
  • 160 is a transfer substrate
  • 161 is a patterned transfer substrate
  • 800 is a lower electrode
  • 200 is an upper current spreading layer
  • 600 is
  • 700 is a substrate
  • 900 is a DBR reflective layer
  • 120 is an anti-reflection film
  • 111 is a current transport anti-reflection window layer
  • 112 is a support.
  • the AlGalnP LED is taken as an example.
  • the device consists of the following parts, the upper electrode 100, the electric Flow blocking layer 110, conductive anti-reflection layer 130, current spreading layer 201, upper confinement layer 300, active region 500, lower confinement layer 400, patterned current spreading layer 202, conductive high reflective layer 140, conductive bonding
  • the layer 150, the transfer substrate 160 and the lower electrode 800 are prepared and processed as follows:
  • a substrate 700 formed of a material capable of matching AlGalnP such as GaAs On a substrate 700 formed of a material capable of matching AlGalnP such as GaAs, a buffer layer 600, a current spreading layer 201, and a lower confinement layer are sequentially epitaxially grown by a metal organic chemical vapor deposition (MOVCD) method. 400, the active region 500, the upper limiting layer 300, the upper current spreading layer 200, thus obtaining an epitaxial wafer of the AlGalnP light emitting diode, as shown in FIG. 5;
  • MOVCD metal organic chemical vapor deposition
  • a layer of metal on the conductive anti-reflecting light-emitting layer 130 such as: AuGeNi, and etching a circular electrode to obtain the upper electrode 100, and vapor-depositing a layer below the transfer substrate 160
  • cleavage and pressure welding dicing, cleavage, obtained a single die, pressed on the tube holder and packaged, completed the production of LED.
  • the AlGalnP LED is taken as an example.
  • the device consists of the following parts, the upper electrode 100, the electric Flow blocking layer 110, conductive anti-reflection layer 130, current spreading layer 201, upper confinement layer 300, active region 500, lower confinement layer 400, patterned current spreading layer 202, conductive high reflective layer 140, conductive bonding
  • the layer 150, the transfer substrate 160 and the lower electrode 800 are prepared and processed as follows:
  • Epitaxial wafer growth On a substrate 700 formed of a material capable of matching AlGalnP such as GaAs, a buffer layer 600, a current spreading layer 201, a lower confinement layer 400, an active region 500, and an upper limit are sequentially epitaxially grown by a MOVCD system. Layer 300, upper current expansion layer 200, thus obtaining an epitaxial wafer of AlGalnP light emitting diode, as shown in FIG. 5;
  • the material may be ITO;
  • the AlGalnP LED is taken as an example.
  • the device is composed of the following parts, an upper electrode 100, a current blocking layer 110, a conductive anti-reflection layer 130, a current spreading layer 201, an upper limiting layer 300, an active region 500,
  • the lower confinement layer 400, the patterned current spreading layer 202, the conductive high light reflecting layer 140, the conductive bonding layer 150, the transfer substrate 160 and the lower electrode 800 are prepared and processed as follows:
  • Epitaxial wafer growth On a substrate 700 formed of a material capable of matching AlGalnP such as GaAs, 185, a buffer layer 600, a current spreading layer 201, a lower confinement layer 400, an active region 500, are sequentially epitaxially grown by a MOVCD system. Restricting layer 300, upper current spreading layer 200, thus obtaining an epitaxial wafer of AlGalnP light emitting diode, as shown in FIG. 5;
  • Photolithography is performed on the current spreading layer 201 and the current is blocked by ion implantation.
  • the material may be ITO;
  • the AlGalnP LED is taken as an example.
  • the device is composed of the following parts, an upper electrode 100, an electric 205 flow blocking layer 110, a conductive anti-reflection layer 130, a current spreading layer 201, an upper confinement layer 300, an active region 500, a lower confinement layer 400, and an upper current extension.
  • the layer 200, the conductive high light reflecting layer 140, the conductive bonding layer 150, the patterned transfer substrate 161 and the lower electrode 800 are prepared and processed as follows: 1.
  • a substrate 700 formed of a material capable of matching AlGalnP such as GaAs On a substrate 700 formed of a material capable of matching AlGalnP such as GaAs, a buffer layer 600, a current spreading layer 201, and a lower confinement layer 400 are sequentially epitaxially grown by a MOVCD system.
  • a MOVCD system On a substrate 700 formed of a material capable of matching AlGalnP such as GaAs, a buffer layer 600, a current spreading layer 201, and a lower confinement layer 400 are sequentially epitaxially grown by a MOVCD system.
  • the material may be ITO;
  • a layer of metal such as AuGeNi
  • AuGeNi a layer of metal
  • etching a circular electrode to obtain an upper electrode 100, which is also vapor-deposited under the patterned transfer substrate 161.
  • a layer of metal such as AuZnAu, forms the lower electrode 800, completing the fabrication of the upper and lower electrodes;

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Abstract

L'invention concerne une DEL avec une couche de fenêtre anti-réfléchissante de transport de courant et un substrat de transfert à motif. Elle comprend une électrode supérieure (100), une couche (111) de fenêtre anti-réfléchissante de transport de courant, une couche (300) de confinement supérieure, une zone active (500), une couche (400) de confinement inférieure, un support (112) et une électrode inférieure (800). La couche (111) de fenêtre anti-réfléchissante de transport de courant comprend une couche (130) électrique d'émission de lumière anti-réfléchissante, une couche (110) de blocage de courant et une couche (201) d'étalement de courant. Le support comprend une couche (202) d'étalement de courant à motif, une couche (140) électrique de réflexion de lumière élevée, une couche de liaison électrique (150) et un substrat de transfert (160).
PCT/CN2008/000178 2007-01-26 2008-01-24 Diode électroluminescente Ceased WO2008092378A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN2007100631013A CN101009353B (zh) 2007-01-26 2007-01-26 具有电流输运增透窗口层和高反射图形转移衬底结构的发光二极管
CN200710063101.3 2007-01-26

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WO2008092378A1 true WO2008092378A1 (fr) 2008-08-07

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WO (1) WO2008092378A1 (fr)

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EP2466654A3 (fr) * 2010-12-20 2014-01-01 LG Innotek Co., Ltd. Dispositif électroluminescent et son procédé de fabrication
CN104269478A (zh) * 2014-09-24 2015-01-07 杭州士兰明芯科技有限公司 Led衬底结构及其制作方法
EP2445017A3 (fr) * 2010-10-19 2015-04-22 Samsung Electronics Co., Ltd. Dispositif vertical en semi-conducteur électroluminescent

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CN101009353B (zh) * 2007-01-26 2010-07-21 北京太时芯光科技有限公司 具有电流输运增透窗口层和高反射图形转移衬底结构的发光二极管
JP5115425B2 (ja) * 2008-09-24 2013-01-09 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
CN102054912A (zh) * 2009-11-04 2011-05-11 大连路美芯片科技有限公司 一种发光二极管及其制造方法
CN102097560B (zh) * 2010-12-31 2012-11-14 厦门市三安光电科技有限公司 具有复合式双电流扩展层的氮化物发光二极管
CN102709204B (zh) * 2012-05-30 2015-01-21 杭州士兰明芯科技有限公司 一种led芯片的键合方法
CN103078026A (zh) * 2012-10-11 2013-05-01 光达光电设备科技（嘉兴）有限公司 半导体发光元件及其制造方法
CN110265517B (zh) * 2013-07-17 2024-03-29 晶元光电股份有限公司 发光元件
US9666779B2 (en) 2013-11-25 2017-05-30 Yangzhou Zhongke Semiconductor Lighting Co., Ltd. Semiconductor light emitting diode chip with current extension layer and graphical current extension layers
CN104952993B (zh) * 2014-03-24 2018-02-09 山东浪潮华光光电子股份有限公司 一种电流扩展层带有二维光学结构的反极性AlGaInP发光二极管
CN105206721B (zh) * 2015-10-29 2018-01-19 天津三安光电有限公司 发光二极管
CN106057998A (zh) * 2016-08-10 2016-10-26 山东浪潮华光光电子股份有限公司 一种具有电流阻挡层及电流扩展层的GaAs基发光二极管芯片及其制备方法
DE102017104719A1 (de) * 2017-03-07 2018-09-13 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterkörper und Halbleiterchip
CN109326952B (zh) * 2017-07-31 2020-07-07 山东华光光电子股份有限公司 一种高电流密度、高散热系数的半导体激光器制备方法
TW201924086A (zh) * 2017-11-15 2019-06-16 南韓商Ａｕｋ公司 改善反射率的光反射型紅外線發光二極體晶片及其製造方法
CN116093230A (zh) * 2023-01-16 2023-05-09 江西兆驰半导体有限公司 一种led芯片及制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6121635A (en) * 1997-04-15 2000-09-19 Kabushiki Kaisha Toshiba Semiconductor light-emitting element having transparent electrode and current blocking layer, and semiconductor light-emitting including the same
US6864514B2 (en) * 2002-12-17 2005-03-08 Sharp Kabushiki Kaisha Light emitting diode
CN1758493A (zh) * 2004-10-08 2006-04-12 晶元光电股份有限公司 具有微反射结构层的发光元件
WO2006068377A1 (fr) * 2004-12-23 2006-06-29 Lg Innotek Co., Ltd Dispositif electroluminescent semi-conducteur de nitrure et procede de fabrication associe
CN101009353A (zh) * 2007-01-26 2007-08-01 北京工业大学 电流输运增透窗口层和高反射图形转移衬底结构的发光二极管

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6121635A (en) * 1997-04-15 2000-09-19 Kabushiki Kaisha Toshiba Semiconductor light-emitting element having transparent electrode and current blocking layer, and semiconductor light-emitting including the same
US6864514B2 (en) * 2002-12-17 2005-03-08 Sharp Kabushiki Kaisha Light emitting diode
CN1758493A (zh) * 2004-10-08 2006-04-12 晶元光电股份有限公司 具有微反射结构层的发光元件
WO2006068377A1 (fr) * 2004-12-23 2006-06-29 Lg Innotek Co., Ltd Dispositif electroluminescent semi-conducteur de nitrure et procede de fabrication associe
CN101009353A (zh) * 2007-01-26 2007-08-01 北京工业大学 电流输运增透窗口层和高反射图形转移衬底结构的发光二极管

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2445017A3 (fr) * 2010-10-19 2015-04-22 Samsung Electronics Co., Ltd. Dispositif vertical en semi-conducteur électroluminescent
EP2466654A3 (fr) * 2010-12-20 2014-01-01 LG Innotek Co., Ltd. Dispositif électroluminescent et son procédé de fabrication
US8916883B2 (en) 2010-12-20 2014-12-23 Lg Innotek Co., Ltd. Light emitting device and method for fabricating the same
CN104269478A (zh) * 2014-09-24 2015-01-07 杭州士兰明芯科技有限公司 Led衬底结构及其制作方法

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