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WO2008091393A3 - Group iv nanoparticles and films thereof - Google Patents

Group iv nanoparticles and films thereof Download PDF

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Publication number
WO2008091393A3
WO2008091393A3 PCT/US2007/076549 US2007076549W WO2008091393A3 WO 2008091393 A3 WO2008091393 A3 WO 2008091393A3 US 2007076549 W US2007076549 W US 2007076549W WO 2008091393 A3 WO2008091393 A3 WO 2008091393A3
Authority
WO
WIPO (PCT)
Prior art keywords
nanoparticles
group
films
atoms
manoparticle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2007/076549
Other languages
French (fr)
Other versions
WO2008091393A2 (en
WO2008091393B1 (en
Inventor
Maxim Kelman
Xuegeng Li
Pingrong Yu
Karel Vanheusden
David Jurbergs
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Innovalight Inc
Original Assignee
Innovalight Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/775,509 external-priority patent/US20090014423A1/en
Priority claimed from US11/842,466 external-priority patent/US7718707B2/en
Application filed by Innovalight Inc filed Critical Innovalight Inc
Priority to CN2007800514770A priority Critical patent/CN101657283B/en
Priority to EP07872740A priority patent/EP2097195A2/en
Publication of WO2008091393A2 publication Critical patent/WO2008091393A2/en
Publication of WO2008091393A3 publication Critical patent/WO2008091393A3/en
Publication of WO2008091393B1 publication Critical patent/WO2008091393B1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/054—Nanosized particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/054—Nanosized particles
    • B22F1/0545—Dispersions or suspensions of nanosized particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/02—Making metallic powder or suspensions thereof using physical processes
    • B22F9/12—Making metallic powder or suspensions thereof using physical processes starting from gaseous material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/123—Nanowire, nanosheet or nanotube semiconductor bodies comprising junctions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Dispersion Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Silicon Compounds (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Medicinal Preparation (AREA)

Abstract

A set of nanoparticles is disclosed. Each nanoparticle of the set of nanoparticles is comprised of a set of Group IV atoms arranged in a substantially spherical configuration. Each manoparticle of the set of nanoparticles further having a sphericity of between about 1.0 and about 2.0; a diameter of between about 4 nm and about 100 nm; and a sintering temperature less than a melting temperature of the set of Group IV atoms.
PCT/US2007/076549 2006-12-21 2007-08-22 Group iv nanoparticles and films thereof Ceased WO2008091393A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2007800514770A CN101657283B (en) 2006-12-21 2007-08-22 Group IV nanoparticles and films thereof
EP07872740A EP2097195A2 (en) 2006-12-21 2007-08-22 Group iv nanoparticles and films thereof

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US87632806P 2006-12-21 2006-12-21
US60/876,328 2006-12-21
US90176807P 2007-02-16 2007-02-16
US60/901,768 2007-02-16
US11/775,509 US20090014423A1 (en) 2007-07-10 2007-07-10 Concentric flow-through plasma reactor and methods therefor
US11/775,509 2007-07-10
US11/842,466 US7718707B2 (en) 2006-12-21 2007-08-21 Method for preparing nanoparticle thin films
US11/842,466 2007-08-21

Publications (3)

Publication Number Publication Date
WO2008091393A2 WO2008091393A2 (en) 2008-07-31
WO2008091393A3 true WO2008091393A3 (en) 2008-10-02
WO2008091393B1 WO2008091393B1 (en) 2008-12-11

Family

ID=39577481

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/076549 Ceased WO2008091393A2 (en) 2006-12-21 2007-08-22 Group iv nanoparticles and films thereof

Country Status (3)

Country Link
EP (1) EP2097195A2 (en)
CN (1) CN101657283B (en)
WO (1) WO2008091393A2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8435477B2 (en) 1997-07-21 2013-05-07 Nanogram Corporation Dispersions of submicron doped silicon particles
US8623951B2 (en) 2001-08-03 2014-01-07 Nanogram Corporation Silicon nanoparticle dispersions
US9006720B2 (en) 2010-06-29 2015-04-14 Nanogram Corporation Silicon/germanium nanoparticles and inks having low metal contamination
US9175174B2 (en) 2000-10-17 2015-11-03 Nanogram Corporation Dispersions of submicron doped silicon particles
US9199435B2 (en) 2001-01-26 2015-12-01 Nanogram Corporation Dispersions of silicon nanoparticles
US9475695B2 (en) 2013-05-24 2016-10-25 Nanogram Corporation Printable inks with silicon/germanium based nanoparticles with high viscosity alcohol solvents

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7892872B2 (en) 2007-01-03 2011-02-22 Nanogram Corporation Silicon/germanium oxide particle inks, inkjet printing and processes for doping semiconductor substrates
US8163587B2 (en) * 2009-07-02 2012-04-24 Innovalight, Inc. Methods of using a silicon nanoparticle fluid to control in situ a set of dopant diffusion profiles
GB201109319D0 (en) * 2011-06-03 2011-07-20 Intrinsiq Materials Ltd Uk Fine particles
US10225919B2 (en) 2011-06-30 2019-03-05 Aes Global Holdings, Pte. Ltd Projected plasma source
US11939477B2 (en) 2014-01-30 2024-03-26 Monolith Materials, Inc. High temperature heat integration method of making carbon black
US10370539B2 (en) 2014-01-30 2019-08-06 Monolith Materials, Inc. System for high temperature chemical processing
KR102497660B1 (en) 2014-01-31 2023-02-07 모놀리스 머티어리얼스 인코포레이티드 Plasma torch design
KR102705340B1 (en) 2015-02-03 2024-09-09 모놀리스 머티어리얼스 인코포레이티드 Carbon Black Production System
WO2016126600A1 (en) 2015-02-03 2016-08-11 Monolith Materials, Inc. Regenerative cooling method and apparatus
CA3032246C (en) 2015-07-29 2023-12-12 Monolith Materials, Inc. Dc plasma torch electrical power design method and apparatus
EP3347306A4 (en) 2015-09-09 2019-04-17 Monolith Materials, Inc. GRAPHENE-BASED CIRCULAR MATERIALS WITH LOW NUMBER OF LAYERS
ES2983689T3 (en) 2016-04-29 2024-10-24 Monolith Mat Inc Torch Stinger Method and Apparatus
WO2018165483A1 (en) 2017-03-08 2018-09-13 Monolith Materials, Inc. Systems and methods of making carbon particles with thermal transfer gas
CN115746586A (en) 2017-04-20 2023-03-07 巨石材料公司 Particle system and method
CA3074220A1 (en) 2017-08-28 2019-03-07 Monolith Materials, Inc. Systems and methods for particle generation
CA3074216A1 (en) 2017-08-28 2019-03-07 Monolith Materials, Inc. Particle systems and methods

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5576248A (en) * 1994-03-24 1996-11-19 Starfire Electronic Development & Marketing, Ltd. Group IV semiconductor thin films formed at low temperature using nanocrystal precursors
US20060051505A1 (en) * 2004-06-18 2006-03-09 Uwe Kortshagen Process and apparatus for forming nanoparticles using radiofrequency plasmas
WO2006096201A2 (en) * 2004-07-28 2006-09-14 Evergreen Solar, Inc. Method for preparing group iv nanocrystals with chemically accessible surfaces
WO2008039757A2 (en) * 2006-09-28 2008-04-03 Innovalight, Inc. Semiconductor devices and methods from group iv nanoparticle materials

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1465461A (en) * 2002-06-21 2004-01-07 江苏华强纳米科技有限公司 Method for preparing finely surface protected nano metal powder

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5576248A (en) * 1994-03-24 1996-11-19 Starfire Electronic Development & Marketing, Ltd. Group IV semiconductor thin films formed at low temperature using nanocrystal precursors
US20060051505A1 (en) * 2004-06-18 2006-03-09 Uwe Kortshagen Process and apparatus for forming nanoparticles using radiofrequency plasmas
WO2006096201A2 (en) * 2004-07-28 2006-09-14 Evergreen Solar, Inc. Method for preparing group iv nanocrystals with chemically accessible surfaces
WO2008039757A2 (en) * 2006-09-28 2008-04-03 Innovalight, Inc. Semiconductor devices and methods from group iv nanoparticle materials

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
A. N. GOLDSTEIN: "The melting of silicon nanocrystals: Submicron thin-film structures derived from nanocrystal precursors", APPLIED PHYSICS A, vol. 62, 1996, Springer, pages 33 - 37, XP002488050 *
D. V. MELNIKOV ET. AL.: "Quantum Confinement in Phosphorus-Doped Silicon Nanocrystals", PHYSICAL REVIEW LETTERA, vol. 92, 2004, APS, pages 046802-1 - 046802-4, XP002488048 *
T. IFUKU ET. AL.: "Fabrication of Nanocrystalline Silicon with Small Spread of Particle Size by Pulsed Gas Plasma", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 36, 1997, pages 4031 - 4034, XP002488047 *
Y. H. TANG ET. AL.: "Microstructure and field-emission characteristics of boron-doped Si nanoparticle chains.", APPLIED PHYSICS LETTERS, vol. 79, 2001, AIP, pages 1673 - 1675, XP002488049 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8435477B2 (en) 1997-07-21 2013-05-07 Nanogram Corporation Dispersions of submicron doped silicon particles
US9175174B2 (en) 2000-10-17 2015-11-03 Nanogram Corporation Dispersions of submicron doped silicon particles
US9199435B2 (en) 2001-01-26 2015-12-01 Nanogram Corporation Dispersions of silicon nanoparticles
US8623951B2 (en) 2001-08-03 2014-01-07 Nanogram Corporation Silicon nanoparticle dispersions
US9006720B2 (en) 2010-06-29 2015-04-14 Nanogram Corporation Silicon/germanium nanoparticles and inks having low metal contamination
US9475695B2 (en) 2013-05-24 2016-10-25 Nanogram Corporation Printable inks with silicon/germanium based nanoparticles with high viscosity alcohol solvents

Also Published As

Publication number Publication date
WO2008091393A2 (en) 2008-07-31
CN101657283A (en) 2010-02-24
CN101657283B (en) 2013-01-23
EP2097195A2 (en) 2009-09-09
WO2008091393B1 (en) 2008-12-11

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