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WO2008088010A1 - 薄膜圧電共振器および薄膜圧電フィルタ - Google Patents

薄膜圧電共振器および薄膜圧電フィルタ Download PDF

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Publication number
WO2008088010A1
WO2008088010A1 PCT/JP2008/050519 JP2008050519W WO2008088010A1 WO 2008088010 A1 WO2008088010 A1 WO 2008088010A1 JP 2008050519 W JP2008050519 W JP 2008050519W WO 2008088010 A1 WO2008088010 A1 WO 2008088010A1
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
film piezoelectric
piezoelectric resonator
piezoelectric
upper electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/050519
Other languages
English (en)
French (fr)
Inventor
Kensuke Tanaka
Kazuki Iwashita
Hiroshi Tsuchiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ube Corp
Original Assignee
Ube Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ube Industries Ltd filed Critical Ube Industries Ltd
Priority to JP2008554074A priority Critical patent/JP4775445B2/ja
Priority to US12/522,857 priority patent/US20100109809A1/en
Priority to KR20097015346A priority patent/KR20090109541A/ko
Publication of WO2008088010A1 publication Critical patent/WO2008088010A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/174—Membranes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175—Acoustic mirrors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Micromachines (AREA)

Abstract

　圧電層２と上部電極１０及び下部電極８とを有する圧電共振スタック１２と、それを支持する基板６とを含んでなる薄膜圧電共振器。圧電共振スタック１２は、上部電極１０と下部電極８とが圧電層２を介して互いに対向し且つ１次厚み縦振動が可能な振動領域１８と、基板６により支持される支持領域１９とを有する。振動領域１８は、長径ａと短径ｂとの比ａ／ｂが１.１以上且つ１．７以下の楕円形状をなしている。圧電共振スタック１２は、更に上部電極１０上に形成された上部誘電体層２０を有する。振動領域１８における上部電極１０の厚みおよび上部誘電体層２０の厚みの合計ｃと振動領域１８における圧電層２の厚みｄとの比ｃ／ｄが０．２５以上０．４５以下である。
PCT/JP2008/050519 2007-01-17 2008-01-17 薄膜圧電共振器および薄膜圧電フィルタ Ceased WO2008088010A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008554074A JP4775445B2 (ja) 2007-01-17 2008-01-17 薄膜圧電共振器および薄膜圧電フィルタ
US12/522,857 US20100109809A1 (en) 2007-01-17 2008-01-17 Thin film piezoelectric resonator and thin film piezoelectric filter
KR20097015346A KR20090109541A (ko) 2007-01-17 2008-01-17 박막 압전 공진기 및 박막 압전 필터

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-008028 2007-01-17
JP2007008028 2007-01-17

Publications (1)

Publication Number Publication Date
WO2008088010A1 true WO2008088010A1 (ja) 2008-07-24

Family

ID=39636011

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/050519 Ceased WO2008088010A1 (ja) 2007-01-17 2008-01-17 薄膜圧電共振器および薄膜圧電フィルタ

Country Status (4)

Country Link
US (1) US20100109809A1 (ja)
JP (1) JP4775445B2 (ja)
KR (1) KR20090109541A (ja)
WO (1) WO2008088010A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010045437A (ja) * 2008-08-08 2010-02-25 Fujitsu Ltd 圧電薄膜共振子及びこれを用いたフィルタあるいは分波器
JP2010130294A (ja) * 2008-11-27 2010-06-10 Kyocera Corp 音響波共振子
JP2013222742A (ja) * 2012-04-13 2013-10-28 Seiko Epson Corp 液体噴射ヘッド及び液体噴射装置並びにアクチュエーター
CN108123694A (zh) * 2018-01-03 2018-06-05 宁波大红鹰学院 一种电极优化设计的压电薄膜谐振器

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9608592B2 (en) * 2014-01-21 2017-03-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic wave resonator (FBAR) having stress-relief
JP6333540B2 (ja) * 2013-11-11 2018-05-30 太陽誘電株式会社 圧電薄膜共振子、フィルタ、及び分波器
US11316496B2 (en) * 2016-03-11 2022-04-26 Akoustis, Inc. Method and structure for high performance resonance circuit with single crystal piezoelectric capacitor dielectric material
CN111279613A (zh) * 2017-08-03 2020-06-12 阿库斯蒂斯有限公司 用于体声波谐振器的椭圆结构
US10879872B2 (en) 2019-04-19 2020-12-29 Akoustis, Inc. BAW resonators with antisymmetric thick electrodes

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005124107A (ja) * 2003-10-20 2005-05-12 Fujitsu Media Device Kk 圧電薄膜共振子及びフィルタ
JP2005318366A (ja) * 2004-04-30 2005-11-10 Seiko Epson Corp 圧電薄膜共振子、フィルタ及び圧電薄膜共振子の製造方法
JP2006050021A (ja) * 2004-07-30 2006-02-16 Toshiba Corp 薄膜圧電共振器及びその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6215375B1 (en) * 1999-03-30 2001-04-10 Agilent Technologies, Inc. Bulk acoustic wave resonator with improved lateral mode suppression
FI107660B (fi) * 1999-07-19 2001-09-14 Nokia Mobile Phones Ltd Resonaattorirakenne
US7382078B2 (en) * 2002-07-30 2008-06-03 Avago Technologies General Ip (Singapore) Pte. Ltd. Electrostatic discharge protection of thin-film resonators
US20040021529A1 (en) * 2002-07-30 2004-02-05 Bradley Paul D. Resonator with protective layer
KR20050066104A (ko) * 2003-12-26 2005-06-30 삼성전기주식회사 Ｆｂａｒ 소자 및 그 제조방법
JP4149416B2 (ja) * 2004-05-31 2008-09-10 富士通メディアデバイス株式会社 圧電薄膜共振子およびフィルタならびにそれらの製造方法
JP4550658B2 (ja) * 2005-04-28 2010-09-22 富士通メディアデバイス株式会社 圧電薄膜共振器およびフィルタ
JP4508241B2 (ja) * 2005-06-02 2010-07-21 株式会社村田製作所 圧電共振子及び圧電薄膜フィルタ
JP4756461B2 (ja) * 2005-10-12 2011-08-24 宇部興産株式会社 窒化アルミニウム薄膜およびそれを用いた圧電薄膜共振子
JP2008172713A (ja) * 2007-01-15 2008-07-24 Hitachi Media Electoronics Co Ltd 圧電薄膜共振器および圧電薄膜共振器フィルタおよびその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005124107A (ja) * 2003-10-20 2005-05-12 Fujitsu Media Device Kk 圧電薄膜共振子及びフィルタ
JP2005318366A (ja) * 2004-04-30 2005-11-10 Seiko Epson Corp 圧電薄膜共振子、フィルタ及び圧電薄膜共振子の製造方法
JP2006050021A (ja) * 2004-07-30 2006-02-16 Toshiba Corp 薄膜圧電共振器及びその製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010045437A (ja) * 2008-08-08 2010-02-25 Fujitsu Ltd 圧電薄膜共振子及びこれを用いたフィルタあるいは分波器
JP2010130294A (ja) * 2008-11-27 2010-06-10 Kyocera Corp 音響波共振子
JP2013222742A (ja) * 2012-04-13 2013-10-28 Seiko Epson Corp 液体噴射ヘッド及び液体噴射装置並びにアクチュエーター
CN108123694A (zh) * 2018-01-03 2018-06-05 宁波大红鹰学院 一种电极优化设计的压电薄膜谐振器

Also Published As

Publication number Publication date
JP4775445B2 (ja) 2011-09-21
US20100109809A1 (en) 2010-05-06
JPWO2008088010A1 (ja) 2010-05-13
KR20090109541A (ko) 2009-10-20

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