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WO2008065966A1 - Dispositif optique semi-conducteur et élément optique transparent - Google Patents

Dispositif optique semi-conducteur et élément optique transparent Download PDF

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Publication number
WO2008065966A1
WO2008065966A1 PCT/JP2007/072654 JP2007072654W WO2008065966A1 WO 2008065966 A1 WO2008065966 A1 WO 2008065966A1 JP 2007072654 W JP2007072654 W JP 2007072654W WO 2008065966 A1 WO2008065966 A1 WO 2008065966A1
Authority
WO
WIPO (PCT)
Prior art keywords
group
formula
compound
carbon
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/072654
Other languages
English (en)
Japanese (ja)
Inventor
Ken-Ichi Shinotani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Panasonic Electric Works Co Ltd
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Electric Works Co Ltd, Matsushita Electric Works Ltd filed Critical Panasonic Electric Works Co Ltd
Priority to JP2008546968A priority Critical patent/JP5210880B2/ja
Publication of WO2008065966A1 publication Critical patent/WO2008065966A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/045—Polysiloxanes containing less than 25 silicon atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C08G77/16—Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxyl groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/70—Siloxanes defined by use of the MDTQ nomenclature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins

Definitions

  • B in formula (1) is a hydrogen atom, a gyr silsesquioxane compound, a force, a gyr silsesquioxane compound, a group A carbon carbon
  • the cage compound composed of the cage silsesquioxane compound of the formula (1) and the compound of the formula (2) according to the present invention is a solid which melts at room temperature or at a relatively low temperature until it is crosslinked. Therefore, it is possible to easily seal the semiconductor light emitting element 2 and the like.
  • a device equipped with a dropping funnel, a thermometer, and a reagent injection valve was assembled in a three-necked flask, and 376 ml of hexane, 3 ⁇ 8 ml of allyldimethylchlorosilane, and 4.3 ml of dimethylchlorosilane were charged into the three-flask.
  • the whole system in the three-necked flask was cooled with an ice bath to 5 ° C or less, and after confirming that the temperature in the system was 5 ° C or less, 140 ml of Octanion was added from the dropping funnel under a nitrogen stream.
  • 140 ml of Octanion was added from the dropping funnel under a nitrogen stream.
  • the molar ratio of allyldimethylchlorosilane to octayuon, allyldimethylchlorosilane and dimethylchloro By adjusting the compounding molar ratio of silane, it is possible to synthesize a cage-type silsesquioxane compound in which a hydroxyl group is bonded to a part of silicon atoms constituting a substantially hexahedral structure. In the case where the amount of / is small, a part of the eight reaction sites of Octanion is not substituted, and the unsubstituted site is hydrolyzed to an OH group. Therefore, the number of OH groups introduced into the cage silsesquioxane can be controlled by adjusting the excess degree.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Semiconductor Lasers (AREA)
  • Silicon Polymers (AREA)

Abstract

L'invention concerne un dispositif optique semi-conducteur comprenant un élément luminescent semi-conducteur ou un élément récepteur de lumière semi-conducteur, étanchéifié avec un matériau d'étanchéité, ce matériau d'étanchéité se dégradant difficilement et possédant une durée de vie longue. Un élément luminescent semi-conducteur ou un élément récepteur de lumière est étanchéifié avec un composé silicium comprenant un composé silsesquioxane de type cage représenté par la formule suivante : (AR<SUP>1</SUP>R<SUP>2</SUP>SiOSiO<SUB>1.5</SUB>)<SUB>n</SUB>(BR<SUP>3</SUP>R<SUP>4</SUP>SiOSiO<SUB>1.5</SUB>)<SUB>p</SUB>(HOSiO<SUB>1.5</SUB>)<SUB>m-n-p</SUB> (A représente un groupe possédant une liaison carbone-carbone insaturée, B représente un groupe alkyle saturé non substitué ou substitué, un groupe hydroxy ou un atome d'hydrogène, R<SUP>1</SUP>, R<SUP>2</SUP>, R<SUP>3</SUP> et R<SUP>4</SUP> représentent indépendamment un groupe fonctionnel sélectionné dans un groupe alkyle inférieur, un groupe phényle et un groupe aryalkyle inférieur, m représente un nombre sélectionné entre 6, 8, 10 et 12, n représente un entier compris entre 2 et m, et p représente un entier compris entre 2 et m-n) et un composé représenté par la formule suivante :HR<SUP>5</SUP>R<SUP>6</SUP>Si-X-SiHR<SUP>7</SUP>R<SUP>8</SUP> (X représente un groupe fonctionnel bivalent ou un atome d'oxygène et R<SUP>5</SUP>, R<SUP>6</SUP>, R<SUP>7</SUP> et R<SUP>8 </SUP>représentent indépendamment un groupe alkyle possédant un à trois atomes de carbone ou un atome d'hydrogène) et ensuite le composé silicium est polymérisé<SUP>.</SUP>
PCT/JP2007/072654 2006-11-27 2007-11-22 Dispositif optique semi-conducteur et élément optique transparent Ceased WO2008065966A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008546968A JP5210880B2 (ja) 2006-11-27 2007-11-22 半導体光装置及び透明光学部材

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006319049 2006-11-27
JP2006-319049 2006-11-27

Publications (1)

Publication Number Publication Date
WO2008065966A1 true WO2008065966A1 (fr) 2008-06-05

Family

ID=39467757

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/072654 Ceased WO2008065966A1 (fr) 2006-11-27 2007-11-22 Dispositif optique semi-conducteur et élément optique transparent

Country Status (2)

Country Link
JP (1) JP5210880B2 (fr)
WO (1) WO2008065966A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007246880A (ja) * 2006-02-20 2007-09-27 Matsushita Electric Works Ltd 半導体光装置及び透明光学部材
JP2008201832A (ja) * 2007-02-16 2008-09-04 Shin Etsu Chem Co Ltd シロキサン重合体とその製造方法、該重合体を含有する多孔質膜形成用塗布液ならびに多孔質膜と、該多孔質膜を用いた半導体装置
JP2012067160A (ja) * 2010-09-22 2012-04-05 Kaneka Corp 多面体構造ポリシロキサン変性体およびこれから得られる組成物

Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0267290A (ja) * 1988-06-29 1990-03-07 Akad Wissenschaften Ddr 鳥かご状構造を有する親油性二重環ケイ酸誘導体、その製造方法及びその使用方法
JPH06329687A (ja) * 1993-05-13 1994-11-29 Wacker Chemie Gmbh 有機ケイ素化合物及びその製法
JPH1171462A (ja) * 1997-08-29 1999-03-16 Toshiba Silicone Co Ltd 新規な含ケイ素重合体
JP2000154252A (ja) * 1998-11-18 2000-06-06 Agency Of Ind Science & Technol 新型含シルセスキオキサンポリマー及びその製造方法
JP2000198930A (ja) * 1998-12-28 2000-07-18 Shin Etsu Chem Co Ltd 付加硬化型シリコ―ン組成物
JP2000265066A (ja) * 1999-03-17 2000-09-26 Dow Corning Asia Ltd 有機溶剤可溶性の水素化オクタシルセスキオキサン−ビニル基含有化合物共重合体及び同共重合体からなる絶縁材料
JP2004359933A (ja) * 2003-05-14 2004-12-24 Nagase Chemtex Corp 光素子用封止材
JP2005290352A (ja) * 2004-03-12 2005-10-20 Asahi Kasei Corp カゴ状シルセスキオキサン構造を有する化合物
JP2006022207A (ja) * 2004-07-08 2006-01-26 Chisso Corp ケイ素化合物
WO2006077667A1 (fr) * 2005-01-24 2006-07-27 Momentive Performance Materials Japan Llc. Composition de silicone pour encapsuler un element luminescent et dispositif luminescent
JP2006299150A (ja) * 2005-04-22 2006-11-02 Asahi Kasei Corp 封止材用組成物及び光学デバイス
JP2006299149A (ja) * 2005-04-22 2006-11-02 Asahi Kasei Corp 封止材用組成物及び光学デバイス
JP2007031619A (ja) * 2005-07-28 2007-02-08 Nagase Chemtex Corp 光素子封止用樹脂組成物
JP2007251122A (ja) * 2006-02-20 2007-09-27 Matsushita Electric Works Ltd 半導体光装置及び透明光学部材
JP2007251121A (ja) * 2006-02-20 2007-09-27 Matsushita Electric Works Ltd 半導体光装置及び透明光学部材
WO2007119627A1 (fr) * 2006-04-10 2007-10-25 Ube Industries, Ltd. Formule durcissable, silsesquioxanes durcis, et leurs procédés de production

Patent Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0267290A (ja) * 1988-06-29 1990-03-07 Akad Wissenschaften Ddr 鳥かご状構造を有する親油性二重環ケイ酸誘導体、その製造方法及びその使用方法
JPH06329687A (ja) * 1993-05-13 1994-11-29 Wacker Chemie Gmbh 有機ケイ素化合物及びその製法
JPH1171462A (ja) * 1997-08-29 1999-03-16 Toshiba Silicone Co Ltd 新規な含ケイ素重合体
JP2000154252A (ja) * 1998-11-18 2000-06-06 Agency Of Ind Science & Technol 新型含シルセスキオキサンポリマー及びその製造方法
JP2000198930A (ja) * 1998-12-28 2000-07-18 Shin Etsu Chem Co Ltd 付加硬化型シリコ―ン組成物
JP2000265066A (ja) * 1999-03-17 2000-09-26 Dow Corning Asia Ltd 有機溶剤可溶性の水素化オクタシルセスキオキサン−ビニル基含有化合物共重合体及び同共重合体からなる絶縁材料
JP2004359933A (ja) * 2003-05-14 2004-12-24 Nagase Chemtex Corp 光素子用封止材
JP2005290352A (ja) * 2004-03-12 2005-10-20 Asahi Kasei Corp カゴ状シルセスキオキサン構造を有する化合物
JP2006022207A (ja) * 2004-07-08 2006-01-26 Chisso Corp ケイ素化合物
WO2006077667A1 (fr) * 2005-01-24 2006-07-27 Momentive Performance Materials Japan Llc. Composition de silicone pour encapsuler un element luminescent et dispositif luminescent
JP2006299150A (ja) * 2005-04-22 2006-11-02 Asahi Kasei Corp 封止材用組成物及び光学デバイス
JP2006299149A (ja) * 2005-04-22 2006-11-02 Asahi Kasei Corp 封止材用組成物及び光学デバイス
JP2007031619A (ja) * 2005-07-28 2007-02-08 Nagase Chemtex Corp 光素子封止用樹脂組成物
JP2007251122A (ja) * 2006-02-20 2007-09-27 Matsushita Electric Works Ltd 半導体光装置及び透明光学部材
JP2007251121A (ja) * 2006-02-20 2007-09-27 Matsushita Electric Works Ltd 半導体光装置及び透明光学部材
WO2007119627A1 (fr) * 2006-04-10 2007-10-25 Ube Industries, Ltd. Formule durcissable, silsesquioxanes durcis, et leurs procédés de production

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007246880A (ja) * 2006-02-20 2007-09-27 Matsushita Electric Works Ltd 半導体光装置及び透明光学部材
JP2008201832A (ja) * 2007-02-16 2008-09-04 Shin Etsu Chem Co Ltd シロキサン重合体とその製造方法、該重合体を含有する多孔質膜形成用塗布液ならびに多孔質膜と、該多孔質膜を用いた半導体装置
JP2012067160A (ja) * 2010-09-22 2012-04-05 Kaneka Corp 多面体構造ポリシロキサン変性体およびこれから得られる組成物

Also Published As

Publication number Publication date
JP5210880B2 (ja) 2013-06-12
JPWO2008065966A1 (ja) 2010-03-04

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