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WO2008064085A3 - Abatement system for gallium nitride reactor exhaust gases - Google Patents

Abatement system for gallium nitride reactor exhaust gases Download PDF

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Publication number
WO2008064085A3
WO2008064085A3 PCT/US2007/084857 US2007084857W WO2008064085A3 WO 2008064085 A3 WO2008064085 A3 WO 2008064085A3 US 2007084857 W US2007084857 W US 2007084857W WO 2008064085 A3 WO2008064085 A3 WO 2008064085A3
Authority
WO
WIPO (PCT)
Prior art keywords
group iii
methods
wafers
equipment
exhaust gases
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2007/084857
Other languages
French (fr)
Other versions
WO2008064085A2 (en
Inventor
Chantal Arena
Christiaan Werkhoven
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Publication of WO2008064085A2 publication Critical patent/WO2008064085A2/en
Publication of WO2008064085A3 publication Critical patent/WO2008064085A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The present invention is related to the field of semiconductor processing equipment and methods and provides, in particular, methods and equipment for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, for wafers and so forth. In preferred embodiments, these methods and equipment are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the precursor is provided at a mass flow of at least 50 g Group III element/hour for a time of at least 48 hours to facilitate high volume manufacture of the semiconductor material. Advantageously, the mass flow of the gaseous Group III precursor is controlled to deliver the desired amount.
PCT/US2007/084857 2006-11-22 2007-11-15 Abatement system for gallium nitride reactor exhaust gases Ceased WO2008064085A2 (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US86692806P 2006-11-22 2006-11-22
US60/866,928 2006-11-22
US94286407P 2007-06-08 2007-06-08
US94283207P 2007-06-08 2007-06-08
US60/942,832 2007-06-08
US60/942,864 2007-06-08

Publications (2)

Publication Number Publication Date
WO2008064085A2 WO2008064085A2 (en) 2008-05-29
WO2008064085A3 true WO2008064085A3 (en) 2008-07-17

Family

ID=39430507

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/084857 Ceased WO2008064085A2 (en) 2006-11-22 2007-11-15 Abatement system for gallium nitride reactor exhaust gases

Country Status (1)

Country Link
WO (1) WO2008064085A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113521953B (en) * 2021-07-21 2023-06-02 苏州纳维科技有限公司 Gallium source recovery device in tail gas, tail gas treatment device and HVPE reactor

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4362560A (en) * 1980-11-28 1982-12-07 Abrjutin Vladimir N Process for producing high-purity gallium
US4798701A (en) * 1987-07-13 1989-01-17 International Business Machines Corporation Method of synthesizing amorphous group IIIA-group VA compounds
US5151395A (en) * 1987-03-24 1992-09-29 Novapure Corporation Bulk gas sorption and apparatus, gas containment/treatment system comprising same, and sorbent composition therefor
US5300185A (en) * 1991-03-29 1994-04-05 Kabushiki Kaisha Toshiba Method of manufacturing III-V group compound semiconductor
US6406540B1 (en) * 1999-04-27 2002-06-18 The United States Of America As Represented By The Secretary Of The Air Force Process and apparatus for the growth of nitride materials
US6845619B2 (en) * 2002-12-11 2005-01-25 Advanced Technology Materials, Inc. Integrated system and process for effluent abatement and energy generation
US20060099123A1 (en) * 2002-08-23 2006-05-11 Seeley Andrew J Utilisation of waste gas streams
US20060169996A1 (en) * 2002-12-27 2006-08-03 General Electric Company Crystalline composition, wafer, and semi-conductor structure

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4362560A (en) * 1980-11-28 1982-12-07 Abrjutin Vladimir N Process for producing high-purity gallium
US5151395A (en) * 1987-03-24 1992-09-29 Novapure Corporation Bulk gas sorption and apparatus, gas containment/treatment system comprising same, and sorbent composition therefor
US4798701A (en) * 1987-07-13 1989-01-17 International Business Machines Corporation Method of synthesizing amorphous group IIIA-group VA compounds
US5300185A (en) * 1991-03-29 1994-04-05 Kabushiki Kaisha Toshiba Method of manufacturing III-V group compound semiconductor
US6406540B1 (en) * 1999-04-27 2002-06-18 The United States Of America As Represented By The Secretary Of The Air Force Process and apparatus for the growth of nitride materials
US20060099123A1 (en) * 2002-08-23 2006-05-11 Seeley Andrew J Utilisation of waste gas streams
US6845619B2 (en) * 2002-12-11 2005-01-25 Advanced Technology Materials, Inc. Integrated system and process for effluent abatement and energy generation
US20060169996A1 (en) * 2002-12-27 2006-08-03 General Electric Company Crystalline composition, wafer, and semi-conductor structure

Also Published As

Publication number Publication date
WO2008064085A2 (en) 2008-05-29

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