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WO2008055099A3 - Pilote de sortie de bus mémoire d'un dispositif à mémoire à blocs multiples et procédé pour celui-ci - Google Patents

Pilote de sortie de bus mémoire d'un dispositif à mémoire à blocs multiples et procédé pour celui-ci Download PDF

Info

Publication number
WO2008055099A3
WO2008055099A3 PCT/US2007/082824 US2007082824W WO2008055099A3 WO 2008055099 A3 WO2008055099 A3 WO 2008055099A3 US 2007082824 W US2007082824 W US 2007082824W WO 2008055099 A3 WO2008055099 A3 WO 2008055099A3
Authority
WO
WIPO (PCT)
Prior art keywords
output driver
method therefor
bus
bus output
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2007/082824
Other languages
English (en)
Other versions
WO2008055099A2 (fr
Inventor
Jentsung Lin
Ajay Anant Ingle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Priority to KR1020097011277A priority Critical patent/KR101059270B1/ko
Priority to CN2007800388867A priority patent/CN101529520B/zh
Priority to EP07863608A priority patent/EP2082399B1/fr
Priority to AT07863608T priority patent/ATE517416T1/de
Priority to JP2009535411A priority patent/JP2010508618A/ja
Publication of WO2008055099A2 publication Critical patent/WO2008055099A2/fr
Publication of WO2008055099A3 publication Critical patent/WO2008055099A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/26—Accessing multiple arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/1201—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising I/O circuitry
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/38—Response verification devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1048—Data bus control circuits, e.g. precharging, presetting, equalising
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1069—I/O lines read out arrangements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)

Abstract

Dans un mode de réalisation particulier, un procédé est décrit qui comprend la réception d'une première sortie de détection et d'une seconde sortie de détection d'un amplificateur de détection au niveau d'un premier dispositif à trois états couplé à un premier bus, la réception de la première sortie de détection et de la seconde sortie de détection de l'amplificateur de détection au niveau d'un second dispositif à trois états couplé à un second bus, et l'activation sélective de l'un parmi le premier dispositif à trois états et le second dispositif à trois états pour piloter le premier bus ou le second bus en réponse à une entrée de sélection de bus.
PCT/US2007/082824 2006-10-30 2007-10-29 Pilote de sortie de bus mémoire d'un dispositif à mémoire à blocs multiples et procédé pour celui-ci Ceased WO2008055099A2 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020097011277A KR101059270B1 (ko) 2006-10-30 2007-10-29 다중-뱅크 메모리 장치의 메모리 버스 출력 드라이버 및 방법
CN2007800388867A CN101529520B (zh) 2006-10-30 2007-10-29 多库存储器装置的存储器总线输出驱动器及用于其的方法
EP07863608A EP2082399B1 (fr) 2006-10-30 2007-10-29 Pilote de sortie de bus mémoire d'un dispositif à mémoire à blocs multiples et procédé pour celui-ci
AT07863608T ATE517416T1 (de) 2006-10-30 2007-10-29 Speicherbusausgangstreiber einer mehrbank- speicheranordnung und verfahren dafür
JP2009535411A JP2010508618A (ja) 2006-10-30 2007-10-29 マルチバンクメモリデバイスのメモリバスアウトプットドライバ及びそのための方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/554,522 2006-10-30
US11/554,522 US7505342B2 (en) 2006-10-30 2006-10-30 Memory bus output driver of a multi-bank memory device and method therefor

Publications (2)

Publication Number Publication Date
WO2008055099A2 WO2008055099A2 (fr) 2008-05-08
WO2008055099A3 true WO2008055099A3 (fr) 2008-12-04

Family

ID=39323757

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/082824 Ceased WO2008055099A2 (fr) 2006-10-30 2007-10-29 Pilote de sortie de bus mémoire d'un dispositif à mémoire à blocs multiples et procédé pour celui-ci

Country Status (7)

Country Link
US (1) US7505342B2 (fr)
EP (1) EP2082399B1 (fr)
JP (3) JP2010508618A (fr)
KR (1) KR101059270B1 (fr)
CN (1) CN101529520B (fr)
AT (1) ATE517416T1 (fr)
WO (1) WO2008055099A2 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8472267B2 (en) * 2010-12-20 2013-06-25 Apple Inc. Late-select, address-dependent sense amplifier
US8767493B2 (en) * 2011-06-27 2014-07-01 Taiwan Semiconductor Manufacturing Company, Ltd. SRAM differential voltage sensing apparatus
US9430411B2 (en) 2013-11-13 2016-08-30 Sandisk Technologies Llc Method and system for communicating with non-volatile memory
US9390033B2 (en) 2013-11-13 2016-07-12 Sandisk Technologies Llc Method and system for communicating with non-volatile memory via multiple data paths
US9377968B2 (en) 2013-11-13 2016-06-28 Sandisk Technologies Llc Method and system for using templates to communicate with non-volatile memory
US10140044B2 (en) 2016-03-31 2018-11-27 Qualcomm Incorporated Efficient memory bank design
US10043557B1 (en) * 2017-10-10 2018-08-07 Micron Technology, Inc. Apparatuses and methods for parallel I/O operations in a memory
US12249365B2 (en) * 2023-03-06 2025-03-11 Windbond Electronics Corp. Memory device capable of performing in-memory computing

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5185744A (en) * 1989-08-18 1993-02-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device with test circuit
US5668482A (en) * 1995-02-10 1997-09-16 Texas Instruments Incorporated Bus maintenance circuit
US5680365A (en) * 1996-05-16 1997-10-21 Mitsubishi Semiconductor America, Inc. Shared dram I/O databus for high speed operation
US6163863A (en) * 1998-05-22 2000-12-19 Micron Technology, Inc. Method and circuit for compressing test data in a memory device
US20020031035A1 (en) * 2000-09-08 2002-03-14 Mitsubishi Denki Kabushiki Kaisha Matsushita Electric Industrial Co., Ltd. Multi-bank semiconductor memory device
US6487688B1 (en) * 1999-12-23 2002-11-26 Logicvision, Inc. Method for testing circuits with tri-state drivers and circuit for use therewith
US20030093732A1 (en) * 2001-10-27 2003-05-15 Gary Morton Tristate buses
US20040153929A1 (en) * 2003-01-30 2004-08-05 Himakiran Kodihalli Control of tristate buses during scan test

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57198594A (en) * 1981-06-01 1982-12-06 Hitachi Ltd Semiconductor storage device
JPS63200391A (ja) * 1987-02-16 1988-08-18 Toshiba Corp スタテイツク型半導体メモリ
JPH023165A (ja) * 1988-06-20 1990-01-08 Hitachi Ltd 半導体記憶装置
JPH02244479A (ja) * 1989-03-16 1990-09-28 Fujitsu Ltd 半導体メモリ装置
JP2938706B2 (ja) * 1992-04-27 1999-08-25 三菱電機株式会社 同期型半導体記憶装置
EP0798726B1 (fr) * 1996-03-29 2004-01-07 STMicroelectronics S.r.l. Architecture pour la gestion de programmation et lecture des dispositifs de mémoire, notamment pour des tests
JP2000021168A (ja) * 1998-06-30 2000-01-21 Fujitsu Ltd 半導体メモリ及びこれを備えた半導体装置
US6378008B1 (en) * 1998-11-25 2002-04-23 Cypress Semiconductor Corporation Output data path scheme in a memory device
JP3784979B2 (ja) * 1999-02-09 2006-06-14 株式会社東芝 バス駆動回路
JP2001043671A (ja) * 1999-07-28 2001-02-16 Oki Micro Design Co Ltd 半導体装置
US6642749B1 (en) * 2002-09-27 2003-11-04 Lsi Logic Corporation Latching sense amplifier with tri-state output
US7280401B2 (en) * 2003-07-10 2007-10-09 Telairity Semiconductor, Inc. High speed data access memory arrays

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5185744A (en) * 1989-08-18 1993-02-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device with test circuit
US5668482A (en) * 1995-02-10 1997-09-16 Texas Instruments Incorporated Bus maintenance circuit
US5680365A (en) * 1996-05-16 1997-10-21 Mitsubishi Semiconductor America, Inc. Shared dram I/O databus for high speed operation
US6163863A (en) * 1998-05-22 2000-12-19 Micron Technology, Inc. Method and circuit for compressing test data in a memory device
US6487688B1 (en) * 1999-12-23 2002-11-26 Logicvision, Inc. Method for testing circuits with tri-state drivers and circuit for use therewith
US20020031035A1 (en) * 2000-09-08 2002-03-14 Mitsubishi Denki Kabushiki Kaisha Matsushita Electric Industrial Co., Ltd. Multi-bank semiconductor memory device
US20030093732A1 (en) * 2001-10-27 2003-05-15 Gary Morton Tristate buses
US20040153929A1 (en) * 2003-01-30 2004-08-05 Himakiran Kodihalli Control of tristate buses during scan test

Also Published As

Publication number Publication date
ATE517416T1 (de) 2011-08-15
US7505342B2 (en) 2009-03-17
JP2010508618A (ja) 2010-03-18
CN101529520A (zh) 2009-09-09
JP5797813B2 (ja) 2015-10-21
JP2013093094A (ja) 2013-05-16
US20080112243A1 (en) 2008-05-15
KR20090077848A (ko) 2009-07-15
JP2014222556A (ja) 2014-11-27
EP2082399B1 (fr) 2011-07-20
JP5563056B2 (ja) 2014-07-30
CN101529520B (zh) 2013-04-03
KR101059270B1 (ko) 2011-08-24
EP2082399A2 (fr) 2009-07-29
WO2008055099A2 (fr) 2008-05-08

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