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WO2008053534A1 - Amplificateur doherty - Google Patents

Amplificateur doherty Download PDF

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Publication number
WO2008053534A1
WO2008053534A1 PCT/JP2006/321769 JP2006321769W WO2008053534A1 WO 2008053534 A1 WO2008053534 A1 WO 2008053534A1 JP 2006321769 W JP2006321769 W JP 2006321769W WO 2008053534 A1 WO2008053534 A1 WO 2008053534A1
Authority
WO
WIPO (PCT)
Prior art keywords
amplifier
peak
doherty
amplifying elements
radiator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2006/321769
Other languages
English (en)
Japanese (ja)
Inventor
Mineo Noda
Shinji Ohkawa
Kouji Ishii
Toshirou Yukinaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2008541947A priority Critical patent/JPWO2008053534A1/ja
Priority to PCT/JP2006/321769 priority patent/WO2008053534A1/fr
Publication of WO2008053534A1 publication Critical patent/WO2008053534A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21106—An input signal being distributed in parallel over the inputs of a plurality of power amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21142—Output signals of a plurality of power amplifiers are parallel combined to a common output

Definitions

  • the present invention relates to a Doherty amplifier used in a base station distortion compensation type power amplifying apparatus and the like, and more particularly to a Doherty amplifier whose temperature characteristics are improved in order to perform distortion compensation with high power efficiency.
  • Non-Patent Document 1 As a high-efficiency distortion compensation method in a power amplification device of a base station, a predistortion method that cancels the original distortion by creating a reverse characteristic distortion and a feedforward method that applies distortion control to the front side A so-called cross-scan selection system is introduced in Non-Patent Document 1 and so on.
  • Non-patent document 2 also introduces a base station distortion-compensated power amplifying device using a feed-forward method and Dono and tee amplifiers. Furthermore, by combining the above-mentioned cross scan selection method with a Dono and Tee amplifier, it is possible to achieve further higher efficiency and lower distortion of the base station distortion compensation power amplifier.
  • FIG. 1 is a block diagram showing a configuration of a conventional base station distortion compensation power amplifying apparatus that combines a cross scan selection method and a Doherty amplifier.
  • two main amplifiers are a first Dono, tee amplifier 1 and a second Dono, tee amplifier 2.
  • the base station distortion compensation power amplifier can be made more efficient.
  • the first Doherty amplifier 1 has a feedback path from the output side distributor 4 to the synthesizer 9 ⁇ delay unit 8 ⁇ distributor 7 ⁇ distributor 3 ⁇ first dono, tee amplifier 1.
  • Distortion control is performed by feed-forward control based on.
  • the second Doherty amplifier 2 creates a distortion having an inverse characteristic with respect to the first Dono and Tee amplifier 1 and inputs the distortion to the synthesizer 6 (that is, by applying predistortion).
  • the distortion input from Doherty amplifier 1 to distributor 4 ⁇ delayer 5 ⁇ combiner 6 is canceled out. This makes it possible to achieve both high efficiency and distortion compensation of the base station distortion compensation power amplifier.
  • the Doherty amplifier used in the base station distortion compensation power amplifying apparatus as shown in FIG. 1 was first devised by Mr. WHDoherty in 1936, and was introduced in Non-Patent Document 3, for example. ing.
  • Fig. 2 is a block diagram showing the basic configuration of the Doherty amplifier.
  • the Doherty amplifier includes a carrier amplifying element 21 and a first ⁇ / 4 phase shifter 22 that are always operating, and a peak amplifying element 23 and a second end / 4 that operate only when the peak power is high. And phase shifter 24. Since such a Dono and Tee amplifier is a well-known technique, description of its operation is omitted.
  • the cross scan selection type distortion compensation circuit as shown in Fig. 1 uses two sets of Dono and Tee amplifiers as shown in Fig. 2. Therefore, in order to perform sufficient distortion compensation, the distortion characteristics of two sets (plurality) of Dono and Tee amplifiers (that is, the first Dono, Tee amplifier 1 and the second Doherty amplifier 2 shown in FIG. 1) are used. It is necessary to align. For this purpose, the temperature rise values of the two pairs (multiple) Donot and Tee amplifiers must be set to the same value.
  • FIG. 3 is a conceptual diagram of the prior art showing an arrangement example in which two sets of Doherty amplifiers in parallel configuration are mounted on the same radiator.
  • Fig. 3 shows a configuration in which the first Dono, tee amplifier 1 and second Doherty amplifier 2 are mounted on the same radiator (fin) 31 in the cross-scan selection type distortion compensation circuit in Fig. 1. Is shown.
  • the first Doherte Carrier amplifying element CI and peak amplifying element PI of amplifier 1 and carrier amplifying element C2 and peak amplifying element P2 of second Doherty amplifier 2 are mounted on the same radiator 31 to achieve a temperature balance of each amplifying element.
  • the first Doherte Carrier amplifying element CI and peak amplifying element PI of amplifier 1 and carrier amplifying element C2 and peak amplifying element P2 of second Doherty amplifier 2 are mounted on the same radiator 31 to achieve a temperature balance of each amplifying element.
  • Non-Patent Document 1 2002 IEICE Electronics Society Conference “Distortion-Canceling Power Synthesis Amplifier”
  • Non-Patent Document 3 "A New High Efficiency Power Amplifier For Modulared Wave", Proceeding of the Institude of Radio Engineers, Vol.24, No.9.September 1936
  • the radiator 31 on which the first Dono amplifier Tee 1 and the second Doherty amplifier 2 are mounted is forcibly air-cooled upward with a fan 32.
  • the temperature difference between the first dough / tee amplifier 1 and the second dough / tee amplifier 2 becomes small.
  • the heat of the second Dono the carrier amplifier C2 of the tee amplifier 2 on the upstream side of the wind is conducted toward the carrier amplifier C1 of the first Doherty amplifier 1 on the downstream side of the wind.
  • a temperature difference At is generated between the carrier amplifier C1 and the carrier amplifier C2 that are always operating.
  • the characteristics of the first Dono, Tee amplifier 1 and the second Doherty amplifier 2 vary, and there is a difference in the output power of both Doherty amplifiers. This is a factor that reduces power efficiency.
  • the radiator 31 having the first dough / tee amplifier 1 and the second dono / ti amplifier 2 is provided with a plurality of fans (for example, two fans).
  • the first Doherty amplifier is caused by the airflow variation of multiple fans (two fans 32a, 32b).
  • a difference occurs between the output powers of the Dono and Tee amplifiers, which again causes a power loss in the combiner 6 on the output side, which causes a reduction in power efficiency.
  • a radiator 31 equipped with the first dough / tee amplifier 1 and the second dough / tee amplifier 2 is connected to the left fan by a large fan 33.
  • forced air cooling is applied to the right side of the fan, there is a difference in air volume between the center and outside of the radiator 31. Therefore, a temperature difference occurs between the center and the outside of the radiator 31, and the temperature difference
  • carrier amplifier C1 of the tee amplifier 1 and the second Dono, carrier amplifier C2 of the tee amplifier 2 is Arise.
  • the explanation will be made assuming FIG. 3. If the thickness of the heat dissipation board excluding the radiator portion through which air flows in the radiator 31 is increased, the thermal resistance is lowered, and the heat dissipation board portion is reduced. As a result, the heat conductivity of the heat dissipation substrate increases and the heat distribution on the heat dissipation substrate can be made uniform. As a result, the temperature rise values of the carrier amplifier C1 of the first Donoty and tee amplifier 1 and the carrier amplifier C2 of the second Doherty amplifier 2 can be made substantially the same value. However, the thicker part of the heat dissipation substrate increases the total weight of the heatsink, resulting in problems such as the overall distortion compensation device of the Doherty amplifier becoming heavier.
  • An object of the present invention is to realize both power balance, high-efficiency power amplification, and good distortion compensation by setting the temperature rise values of a plurality of Doherty amplifiers configured in parallel to be substantially the same. It is to provide a Dono and Tee amplifier that can perform the above.
  • the Dono and tee amplifier of the present invention is a Dono and tee amplifier in which a plurality of Dono and tee amplifier circuits are connected in parallel, and a plurality of amplifying elements having the same function are connected to the same radiator. Adopt the configuration to be installed.
  • the temperature rise values of a plurality of amplifying elements having the same function can be made substantially the same value, so that various characteristics of a plurality of Doherty amplifying circuits are made uniform. be able to.
  • a plurality of carrier amplifying elements that are always operating can be maintained at substantially the same temperature, and a plurality of peak amplifying elements that operate when the peak power is large are also at substantially the same temperature. Can be maintained. As a result, it is possible to prevent deterioration of various characteristics caused by temperature change of the Doherty amplifier, and to realize high power efficiency and good distortion compensation.
  • FIG. 1 is a block diagram showing a configuration of a conventional base station distortion compensation power amplifying apparatus combining a cross scan selection method and a Dono and tee amplifier.
  • FIG. 3 Conceptual diagram of conventional technology showing an example of arrangement in which two sets of Doherty amplifiers in parallel configuration are mounted on the same radiator
  • FIG. 7 is a circuit diagram in which two sets of Dono and Tee amplifiers applied in parallel to each embodiment of the present invention are combined in parallel.
  • FIG. 8 Configuration diagram of the Doherty amplifier of Embodiment 1 showing the arrangement of each element when the two sets of Doherty amplifiers shown in FIG. 7 are mounted on a radiator.
  • FIG. 9 is a configuration diagram of the Doherty amplifier according to the second embodiment showing the arrangement of each element when the two Dono and Tee amplifiers shown in FIG. 7 are mounted on a multilayer substrate.
  • FIG. 10 Circuit diagram of N-Way Doherty amplifier applied to the third embodiment.
  • FIG. 11A Equivalent circuit in configuration diagram of Doherty amplifier in Embodiment 3 in which two sets of Dono and Tee amplifiers are combined in parallel using N-Way Doherty amplifiers
  • FIG. 11B Effective circuit arrangement in the configuration diagram of the Doherty amplifier of Embodiment 3 in which two sets of Dono and Tee amplifiers are combined in parallel using N-Way Dono and Tee amplifiers.
  • FIG. 12A Equivalent circuit in the configuration diagram of the Dono and Ty amplifiers of the modified example of Embodiment 3 in which the peak amplifying elements of the same capacity are combined in the same radiator in the N-Way Doherty amplifier
  • FIG. 12B N- Way Effective circuit arrangement in the Dono and Ty amplifier configuration diagram of the modified example of Embodiment 3 in which the peak amplifying elements of the same capacity are combined in the same radiator in the Dono and Ty amplifiers
  • FIG. 13 Configuration diagram of the Doherty amplifier of Embodiment 4 showing the configuration of an N-Way Dono, tee amplifier capable of changing the number of peak amplifying elements.
  • the Doherty amplifier in a configuration in which a plurality of Dono and Tee amplifiers are combined in parallel, amplification elements having the same function are arranged in the same radiator to achieve uniform temperature rise. That is, since the Doherty amplifier is composed of a carrier amplifying element that always operates and a peak amplifying element that operates only when the peak power is high, a plurality of Doherty amplifiers constituting a base station distortion compensation power amplifying apparatus and the like are arranged in parallel. In the circuit, carrier amplifiers are mounted on the same radiator, and peak amplifying elements are mounted on the same radiator.
  • the temperature characteristics of a plurality of Dono and Tee amplifiers can be made uniform, so that deterioration of various characteristics caused by temperature changes of the Doherty amplifier can be prevented.
  • it is possible to achieve high power efficiency and good distortion compensation and it is possible to provide a high quality cross scan selection type base station distortion compensation power amplifying apparatus and the like.
  • FIG. 7 is a circuit diagram in which two sets of Dono and tee amplifier circuits applied to each embodiment of the present invention are combined in parallel.
  • a first Doherty amplifier 101 and a second Doherty amplifier 102 are connected in parallel by an input-side distributor 103 and an output-side combiner 104. It becomes the composition.
  • the first Donotty amplifier 101 includes a carrier amplifying element C101 and a first 4th phase shifter RC101 that operate constantly, a peak amplifying element P101 that operates only when the peak power is high, and a second ⁇ / 4. It consists of a parallel circuit with phaser RP101.
  • the second Dotno and T-amplifiers 102 are a carrier amplifying element C102 and a first quarter-phase shifter RC102 that are always operated, a peak amplifying element P102 that operates only when the peak power is high, and a second ⁇ . It consists of a parallel circuit with the / 4 phase shifter RP102. Since the operation of the Doherty amplifier having such a configuration is a well-known technique, a description thereof will be omitted.
  • FIG. 8 is a configuration diagram of the Doherty amplifier according to the first embodiment showing the arrangement of each element when the two sets of Doherty amplifiers shown in FIG. 7 are mounted on a radiator.
  • the carrier amplifying element radiator 106 is equipped with a carrier amplifying element C 101 of the first Doherty amplifier 101 and a carrier amplifying element C 102 of the second Donoty amplifier 102.
  • the peak amplifying element radiator 107 is equipped with a peak amplifying element P101 of the first Doherty amplifier 101 and a second Donoty, a peak amplifying element P102 of the tee amplifier 102. That is, the carrier amplifying element radiator 106 and the peak amplifying element radiator 107 are each equipped with an amplifying element having the same function.
  • the first Dono, tee amplifier 101 includes the first end / 4-phase shifter RC101 and the second end / 4-phase shifter RP101 in FIG.
  • the second Doherty amplifier 102 the first end / 4-phase shifter RC102 and the second end / 4-phase shifter RP102 are connected as shown in FIG.
  • the first Doherty amplifier 101 and the second Donotty amplifier 102 are connected in parallel by the combiner 104 on the output side.
  • the carrier amplification element C101 and the peak amplification element P101 constitute the first Doherty amplifier 101, and the carrier amplification element C102 and the peak amplification element P102
  • the second Doherty amplifier 102 is configured. Then, by combining these two (multiple) Dono and Tee amplifiers in close proximity, the Doherty amplifiers are combined in parallel. To realize.
  • the carrier amplifying element C101 of the first Doherty amplifier 101 having the same function and the carrier amplifying element C102 of the second Doherty amplifier 102 are the same radiator (that is, the radiator for the carrier amplifier). It is possible to maintain the same temperature rise value.
  • the peak amplifying element P101 of the first Donotty amplifier 101 having the same function and the peak amplifying element P102 of the second Doherty amplifier 102 are the same radiator (that is, the radiator for the peak amplifying element). 107), it is possible to maintain the same temperature rise value.
  • the first Doherty amplifier 101 and the second Dono and tee amplifier 102 can be made to have the same characteristics, so that the base station distortion compensation power combining the cross scan selection method and the Dono and tee amplifiers. Even when applied to an amplifying device, it is possible to achieve high efficiency of power amplification and good distortion characteristics.
  • a plurality of carrier amplifiers are arranged on one radiator, and a plurality of peak amplifying elements are arranged on another radiator.
  • Temperature characteristics of multiple dono and tee amplifiers by connecting multiple dono and tee amplifiers in parallel by circuit connection. Can be aligned. As a result, good distortion compensation can be performed while maintaining high power amplification efficiency.
  • the temperature rise values of the carrier amplifier C101 of the first Dono, the tee amplifier 101 and the carrier amplifier C102 of the second Doherty amplifier 102 can be made more uniform, and the first The temperature rise values of the peak amplifying element P101 of the Dono and tee amplifier 101 and the peak amplifying element P102 of the second Dono and tee amplifier 102 can be made more uniform.
  • a plurality of amplifying elements formed on the same wafer and packaged, for example, two amplifying elements are operated alternately to perform amplification.
  • a configuration of a Doherty amplifier using an element can also be used.
  • transistor amplifiers for example, C101 and C102
  • transistor amplifiers that are mounted on the carrier amplifier radiator 106 and operate with the other signal are mounted on the peak amplifier radiator 107, multiple transistor amplifiers on the side that operates at the same timing Since the temperature rise value can be made substantially the same value, the push-pull amplifier can be stably operated regardless of the temperature change.
  • each Doherty amplifier By configuring in this way, it is possible to align the inherent variations and aging of the devices that constitute each transistor amplifier (each Doherty amplifier) just by aligning the temperature characteristics of each transistor amplifier (or each Doherty amplifier). Therefore, power loss on the output side synthesized by each transistor amplifier (each Doherty amplifier) can be prevented. As a result, it becomes possible to operate a power amplifying apparatus composed of a plurality of Dono and Tee amplifiers without maintenance.
  • push-pull type amplifying elements having different output capacities are mounted on the same radiator.
  • a 10w push-pull amplifier eg, C101, C102
  • a 20w push-pull amplifier eg, P101, P102
  • the temperature rise value of multiple push-pull amplifiers operating with the same power capacity can be made to be almost the same value, so that the push-pull amplifier is stable regardless of temperature changes. Can be operated automatically.
  • FIG. 9 is a configuration diagram of the Dono / Tee amplifier according to the second embodiment showing the arrangement of each element when the two sets of Dono / Tee amplifiers shown in FIG. 7 are mounted on a multilayer substrate.
  • the carrier amplifier C101 and the peak amplifier P101 of the first Doherty amplifier 101 are connected to the first ⁇ / 4 phase shifter and the second ⁇ / Force patterned with 4 phase shifter
  • Carrier amplification element C101 side pattern and peak amplification element P101 side pattern is placed in a pattern that is slightly offset upward from the first substrate 111 in the figure. It has been.
  • the carrier amplifier C 102 and the peak amplifier P102 of the second Dono, tee amplifier 102 are provided with the first ⁇ / 4 phase shifter and the second ⁇ / 4 Force phased with phase shifter Carrier amplification element
  • the pattern on the C102 side and the pattern on the peak amplification element P102 side are patterned in a slightly spaced manner on the lower side of the second substrate 112 in the figure.
  • the carrier amplifying element C102 and the peak amplifying element P102 of the second Doherty amplifier 102 are the carrier of the first Donotty amplifier 101 when the first substrate 111 and the second substrate 112 are overlapped.
  • Amplifying element C101 and peak amplifying element P101 are patterned in such a way that they do not overlap at the upper and lower positions.
  • the carrier amplification element C101 of the first Doherty amplifier 101 and the carrier amplification element C102 of the second Doherty amplifier 102 are arranged close to each other, and the peak amplification element of the first Doherty amplifier 101 is P101 and the peak amplifying element P102 of the second Doherty amplifier 102 are arranged close to each other. That is, the configuration is such that amplification elements having the same function are arranged close to each other.
  • FIG. 10 is a circuit diagram of an N-Way Dono and Tee amplifier applied to the third embodiment. As shown in FIG. 10, N peak amplifying elements P101-1 to P101-N are connected in parallel to one carrier amplifying element C101 to constitute an N-Way Doherty amplifier.
  • N-Way Dono and Tee amplifier having a configuration in which peak amplifying elements are connected in multiple stages as shown in FIG. 10 is known as an amplifier with little decrease in efficiency even when the efficiency back-off is large.
  • the N-Way Dono, tee amplifier can take a large back-off expressed by the difference between the maximum output amplitude level of one peak amplifying element and the saturation power level (that is, one peak Since the maximum output amplitude level of the amplifying element can be increased to the limit of the saturation power level), the power efficiency when the number of parallel connections of the peak amplifying element is increased as the peak power increases is always maximized. It becomes possible to maintain the state.
  • FIG. 11 is a configuration diagram of the Doherty amplifier according to Embodiment 3 in which two sets of Doherty amplifiers are combined in parallel using N-Way Doherty amplifiers.
  • FIG. 11A is an equivalent circuit
  • FIG. 11B is an effective circuit. Shows the arrangement.
  • Fig. 11 shows the configuration of a Doherty amplifier when two sets of two-way Doherty amplifiers are combined in parallel when two peak amplifying elements are arranged in parallel.
  • the carrier amplifying element C101 and the two peak amplifying elements PlOl-l, P101-2 are a two-way Doherty amplifier, and the carrier amplifying element C102 and the two peak amplifying elements P102-1, P102-2 are already present.
  • a pair of 2-way Doherty amplifiers are already present.
  • the pair of 2-way Doherty amplifiers 1-way peak amplifying element P 101-1 and the other pair of 2-way doherty amplifiers 1-way peak amplifying element P102-1 have the same function.
  • the 2-way peak amplifying element P101-2 of the tee amplifier and the other pair of 2-way Doherty amplifier 2-way peak amplifying element P102-2 have the same function, so the third radiator 123 Are arranged.
  • peak amplifying elements of the same way are mounted on the same heatsink.
  • carrier amplification elements having the same function can be set to substantially the same temperature, and other peak amplification elements having the same function can be set to substantially the same temperature. it can.
  • the carrier amplifying element C101 and the carrier amplifying element C102 that are always operating are arranged at the peak amplifying element P10 1 ⁇ on the upstream side (lower side in the figure) of the cooling air.
  • 1, P102-1, P101-2, P102-2 may be affected by heat.
  • the radiator 121 having the carrier amplifying elements C101 and C102 that are always operating and generate a large amount of heat is disposed in the center.
  • a radiator 122 equipped with peak amplifying elements P101-1, P102-1, and a radiator 123 equipped with peak amplifying elements P101-2, P102-2 are arranged. With such an arrangement, the temperature characteristics of each amplifying element can be more accurately aligned even in N-Way Dono and Ty amplifiers.
  • FIG. 12 is a configuration diagram of a Dono / Tee amplifier according to a modification of Embodiment 3 in which peak amplifying elements having the same capacity are combined in the same heat radiator in an N-Way Doherty amplifier, and FIG. An equivalent circuit, Figure 12B, shows an effective circuit arrangement. That is, the equivalent circuit of FIG. 12A differs from the equivalent circuit of FIG. 11A in that the peak amplifying elements P101-1 and P1 01-2 having the same capacity are combined into the same radiator 122 and other peak amplifying elements having the same capacity. P102-1 and P102-2 are just put together in the same radiator 123. By doing so, the peak amplifying elements having the same capacity are not easily affected by heat, so that the temperature of each peak amplifying element can be made more uniform.
  • the radiator 121 having the carrier amplifying elements C101 and C102 that are always operating and generate a large amount of heat is disposed at the center.
  • a heatsink 122 equipped with peak amplifying elements P101-1 and P101-2 with the same capacity and a heatsink 123 equipped with other peak amplifying elements P102-1 and P102-2 with the same capacity are arranged. To do.
  • N-Way Dono, tee amplification thus, the temperature characteristics of each amplifying element can be more accurately aligned.
  • the peak amplifying elements having the same capacity are arranged on the same radiator, so that the temperature distribution in the radiator is simplified. Therefore, the circuit design of the N-Way Doherty amplifier can be simplified. Furthermore, since the distortion characteristics of Dono and Tee amplifiers are dominated by the carrier amplifying elements that are operating at all times, by placing the carrier amplifying elements in the center, the temperature rise value of each carrier amplifying element is made uniform. Therefore, better distortion characteristics can be realized when used in a base station distortion compensation power amplifier.
  • Embodiment 3 a configuration example of a 2-way Dono / tee amplifier using two peak amplifying elements has been described.
  • N peak amplifying elements Often composed of N-Way Doherty amplifiers using elements.
  • the configuration of an N-way Donot-tee amplifier capable of connecting N peak amplifying elements will be described.
  • FIG. 13 is a configuration diagram of the Dono / tee amplifier of the fourth embodiment showing the configuration of an N-way Doherty amplifier capable of changing the number of peak amplifying elements.
  • the basic configuration shown in Fig. 13 is the equivalent circuit of Fig. 11A, where a divider 131 and a divider 132 with a 50 ⁇ line force are arranged on the input side, and a synthesizer 133 and a synthesizer 134 with a 50 ⁇ line force on the output side. Is placed.
  • carrier amplification elements C101 and C102 are arranged in the first radiator 121, and the first-way peak amplification elements P101-1 and P102-1
  • the second radiator 122 having the second force and the second-way peak amplifying elements P101-2 and P102-2 are disposed in the third radiator 123. Furthermore, when increasing the number of peak amplifying elements to N-way, the input side of a pair of 3-way peak amplifying elements is connected to distributor 132, and the output side of the peak amplifying element is connected to synthesizer 133. Connect to.
  • the input side of the other set of 3-way peak amplifying elements is connected to the distributor 131, and the output side of the peak amplifying elements is connected to the combiner 134.
  • the input side of the peak amplifying element is sequentially connected to the distributors 131 and 132 and the output of the peak amplifying element until the N-way peak amplifying element is reached.
  • the temperature rise values of the amplification elements having the same function can be made substantially the same value, so that high efficiency and low distortion can be realized.
  • the compensation power amplifier can be effectively used for a large capacity power amplifier.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)

Abstract

La présente invention concerne un arrangement pour lequel les valeurs d'augmentation de température d'une pluralité d'amplificateurs Doherty qui sont combinés en parallèle, sont les mêmes, obtenant, de ce fait, une grande efficacité de l'amplification de puissance et une excellente compensation de distorsion. Un dissipateur de chaleur d'élément amplificateur de porteuse (106) comprend, comme éléments amplificateurs ayant la même fonction, à la fois un élément amplificateur de porteuse (C101) d'un premier amplificateur Doherty (101) et un élément amplificateur de porteuse (C102) d'un second amplificateur Doherty (102). Un dissipateur de chaleur d'élément amplificateur de crête (107) comprend, comme éléments amplificateurs ayant la même fonction qui est différente de celle des éléments amplificateurs de porteuse, à la fois un élément amplificateur de crête (P101) du premier amplificateur Doherty (101) et un élément amplificateur de crête (P102) du second amplificateur Doherty (102). Un répartiteur (103) et un combinateur (104) sont utilisés pour raccorder les premier et second amplificateurs Doherty (101, 102) en parallèle.
PCT/JP2006/321769 2006-10-31 2006-10-31 Amplificateur doherty Ceased WO2008053534A1 (fr)

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JP2008541947A JPWO2008053534A1 (ja) 2006-10-31 2006-10-31 ドハティ増幅器
PCT/JP2006/321769 WO2008053534A1 (fr) 2006-10-31 2006-10-31 Amplificateur doherty

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PCT/JP2006/321769 WO2008053534A1 (fr) 2006-10-31 2006-10-31 Amplificateur doherty

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WO2008053534A1 true WO2008053534A1 (fr) 2008-05-08

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Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008062371A3 (fr) * 2006-11-23 2008-12-18 Nxp Bv Dispositif amplificateur intégré de type doherty présentant une efficacité haute puissance
WO2011024281A1 (fr) * 2009-08-27 2011-03-03 株式会社 東芝 Système d'amplificateur doherty et émetteur utilisant celui-ci
WO2011046031A1 (fr) * 2009-10-13 2011-04-21 日本電気株式会社 Amplificateur de puissance et procédé de fonctionnement de celui-ci
KR20110068439A (ko) * 2009-12-16 2011-06-22 삼성전자주식회사 결합셀 도허티 전력 증폭 장치 및 방법
JP2012029239A (ja) * 2010-07-27 2012-02-09 Sumitomo Electric Device Innovations Inc ドハティ増幅器
JP2012114711A (ja) * 2010-11-25 2012-06-14 Mitsubishi Electric Corp 増幅器及び通信装置
EP2521257A1 (fr) * 2011-05-06 2012-11-07 Nxp B.V. Circuit d'amplification Doherty
WO2012125279A3 (fr) * 2011-03-16 2013-01-03 Cree, Inc. Amplificateur de doherty amélioré
WO2013078992A1 (fr) * 2011-11-28 2013-06-06 华为技术有限公司 Amplificateur de puissance doherty, et procédé et dispositif destinés à améliorer le rendement d'amplification de puissance de celui-ci
JP2014168312A (ja) * 2014-06-18 2014-09-11 Sumitomo Electric Device Innovations Inc ドハティ増幅器
WO2014146585A1 (fr) * 2013-03-20 2014-09-25 华为技术有限公司 Circuit d'amplification de puissance doherty et amplificateur de puissance
EP2751926A4 (fr) * 2011-12-15 2015-07-29 Ericsson Telefon Ab L M Appareil et procédé d'amplification de puissance doherty
JP2016131369A (ja) * 2015-01-09 2016-07-21 株式会社東芝 高周波信号増幅装置
EP2498396A4 (fr) * 2009-11-04 2017-01-18 SK Telecom. Co., Ltd. Amplificateur doherty
ITUB20153048A1 (it) * 2015-08-10 2017-02-10 Itelco Broadcast S R L Struttura di modulo amplificatore di potenza per radiofrequenza a doppio stadio, e amplificatore modulare che utilizza tali moduli
WO2025238880A1 (fr) * 2024-05-16 2025-11-20 三菱電機株式会社 Amplificateur doherty

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JP2001518731A (ja) * 1997-09-30 2001-10-16 モトローラ・インコーポレイテッド 信号を増幅する装置および方法
JP2005303771A (ja) * 2004-04-14 2005-10-27 Mitsubishi Electric Corp 高周波電力増幅器
JP2006067176A (ja) * 2004-08-26 2006-03-09 Nec Corp ドハティ増幅器並列運転回路

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008062371A3 (fr) * 2006-11-23 2008-12-18 Nxp Bv Dispositif amplificateur intégré de type doherty présentant une efficacité haute puissance
JPWO2011024281A1 (ja) * 2009-08-27 2013-01-24 株式会社東芝 ドハティアンプシステム及びこれを用いた送信機
US8237498B2 (en) 2009-08-27 2012-08-07 Kabushiki Kaisha Toshiba Doherty amplifier system and transmitter using the same
WO2011024281A1 (fr) * 2009-08-27 2011-03-03 株式会社 東芝 Système d'amplificateur doherty et émetteur utilisant celui-ci
JP5440818B2 (ja) * 2009-10-13 2014-03-12 日本電気株式会社 電力増幅器およびその動作方法
WO2011046031A1 (fr) * 2009-10-13 2011-04-21 日本電気株式会社 Amplificateur de puissance et procédé de fonctionnement de celui-ci
US8736364B2 (en) 2009-10-13 2014-05-27 Nec Corporation Power amplifier and method of operation thereof
EP2498396A4 (fr) * 2009-11-04 2017-01-18 SK Telecom. Co., Ltd. Amplificateur doherty
KR20110068439A (ko) * 2009-12-16 2011-06-22 삼성전자주식회사 결합셀 도허티 전력 증폭 장치 및 방법
KR101709347B1 (ko) 2009-12-16 2017-03-09 삼성전자주식회사 결합셀 도허티 전력 증폭 장치 및 방법
JP2012029239A (ja) * 2010-07-27 2012-02-09 Sumitomo Electric Device Innovations Inc ドハティ増幅器
JP2012114711A (ja) * 2010-11-25 2012-06-14 Mitsubishi Electric Corp 増幅器及び通信装置
US9564864B2 (en) 2011-03-16 2017-02-07 Cree, Inc. Enhanced doherty amplifier
WO2012125279A3 (fr) * 2011-03-16 2013-01-03 Cree, Inc. Amplificateur de doherty amélioré
US8749306B2 (en) 2011-03-16 2014-06-10 Cree, Inc. Enhanced Doherty amplifier
US8710924B2 (en) 2011-05-06 2014-04-29 Nxp, B.V. Doherty amplifier circuit
EP2521257A1 (fr) * 2011-05-06 2012-11-07 Nxp B.V. Circuit d'amplification Doherty
US8994450B2 (en) 2011-11-28 2015-03-31 Huawei Technologies Co., Ltd. Doherty power amplifier, and method and device for improving power amplification efficiency of Doherty power amplifier
WO2013078992A1 (fr) * 2011-11-28 2013-06-06 华为技术有限公司 Amplificateur de puissance doherty, et procédé et dispositif destinés à améliorer le rendement d'amplification de puissance de celui-ci
EP2751926A4 (fr) * 2011-12-15 2015-07-29 Ericsson Telefon Ab L M Appareil et procédé d'amplification de puissance doherty
US9374041B2 (en) 2011-12-15 2016-06-21 Telefonaktiebolaget Lm Ericsson (Publ) Doherty power amplification apparatus and method
WO2014146585A1 (fr) * 2013-03-20 2014-09-25 华为技术有限公司 Circuit d'amplification de puissance doherty et amplificateur de puissance
US9484866B2 (en) 2013-03-20 2016-11-01 Huawei Technologies Co., Ltd. Doherty power amplifying circuit and power amplifier
JP2014168312A (ja) * 2014-06-18 2014-09-11 Sumitomo Electric Device Innovations Inc ドハティ増幅器
JP2016131369A (ja) * 2015-01-09 2016-07-21 株式会社東芝 高周波信号増幅装置
ITUB20153048A1 (it) * 2015-08-10 2017-02-10 Itelco Broadcast S R L Struttura di modulo amplificatore di potenza per radiofrequenza a doppio stadio, e amplificatore modulare che utilizza tali moduli
WO2025238880A1 (fr) * 2024-05-16 2025-11-20 三菱電機株式会社 Amplificateur doherty

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